摘要:
A supply source for delivery of a CO-containing dopant gas composition is provided. The composition includes a controlled amount of a diluent gas mixture such as xenon and hydrogen, which are each provided at controlled volumetric ratios to ensure optimal carbon ion implantation performance. The composition can be packaged as a dopant gas kit consisting of a CO-containing supply source and a diluent mixture supply source. Alternatively, the composition can be pre-mixed and introduced from a single source that can be actuated in response to a sub-atmospheric condition achieved along the discharge flow path to allow a controlled flow of the dopant mixture from the interior volume of the device into an ion source apparatus.
摘要:
An electro-phoretic display apparatus is disclosed. The electro-phoretic display apparatus has a plurality of pixel units and is coupled to an alternating current (AC) common voltage. The electro-phoretic display apparatus includes a switching unit coupled between a path of a plurality of storage capacitors in the pixel units and the common voltage. The switching unit is turned off according to a control signal before the common voltage carries out a transition action. The switching unit is turned on according to the control signal after the common voltage carries out the transition action.
摘要:
A display controller system with a memory controller and buffers is described. The system enables transferring data from the main memory of the CPU to the image memory without interfering the image updating. As a result, the present invention may allow continuously updating the display image and continuously writing new image data from CPU to the image memory which improves overall system performance.
摘要:
A method for forming a shallow trench isolation (STI) structure with reduced stress is described. An amorphous silicon layer is deposited on a trench surface of a shallow trench isolation structure, and the amorphous silicon is then oxidized by thermal oxidation to form a liner oxide. The thickness of the liner oxide is uniform to reduce stress caused by a liner oxide having non-uniform thickness in the prior art, and the leakage risk between the semiconductor devices can thus be prevented.
摘要:
A method for improving an atomic layer deposition process and the device thereof are described. A shield is first formed in a chamber to divide the chamber into a first sub-chamber and a second sub-chamber. Then a first precursor gas and a second precursor gas are introduced into the first sub-chamber and the second sub-chamber, respectively. A wafer is transferred into the first sub-chamber. When the surface of the wafer is saturated with the first precursor gas, the wafer is moved into the second sub-chamber by rotating a spindle, and the first precursor gas reacts with the second precursor gas. Further, the shield is employed to remove the excess first precursor gas and the unreacted second precursor gas. Subsequently, another wafer is transferred into the first sub-chamber, and hence two wafers are treated simultaneously to increase the throughput of the process.
摘要:
An ionized physical vapor deposition (I-PVD) process is provided. A plasma reaction chamber is provided. The plasma reaction chamber comprises a metal target and a wafer pedestal set up on the top and bottom section inside the chamber, an ionization unit set up between the target and the wafer pedestal and a conductive mesh set up between the ionization unit and the wafer pedestal. A wafer is put on the wafer pedestal. Thereafter, a negative bias voltage is applied to the metal target and a smaller negative bias voltage is applied to the conductive mesh to deposit a thin film over the wafer. The ionized metallic atoms inside the chamber accelerate towards the conductive mesh but decelerate after passing though the mesh so that step coverage of the deposited thin film is improved without damaging the wafer through ion bombardments.
摘要:
A tungsten deposition process. A crystal growth step is carried out in a reaction chamber to form a tungsten crystal layer over a substrate using tungsten hexafluoride, silane and nitrogen as reactive gases. An intermediate step is conducted such that the supply of tungsten hexafluoride to the reaction chamber is cut but the supply of silane is continued. Furthermore, nitrogen is passed into the reaction chamber selectively. A main deposition step is finally conducted to form a tungsten layer over the tungsten crystal layer using tungsten hexafluoride, hydrogen and nitrogen as reactive gases.
摘要:
A supply source for delivery of a CO-containing dopant gas composition is provided. The composition includes a controlled amount of a diluent gas mixture such as xenon and hydrogen, which are each provided at controlled volumetric ratios to ensure optimal carbon ion implantation performance. The composition can be packaged as a dopant gas kit consisting of a CO-containing supply source and a diluent mixture supply source. Alternatively, the composition can be pre-mixed and introduced from a single source that can be actuated in response to a sub-atmospheric condition achieved along the discharge flow path to allow a controlled flow of the dopant mixture from the interior volume of the device into an ion source apparatus.
摘要:
An electro-phoretic display apparatus is disclosed. The electro-phoretic display apparatus mentioned above includes a plurality of pixel unit lines, a plurality of common voltage transferring lines, and a common voltage generator. The common voltage transferring lines extend and connect to a common line segment directly along a layout direction. The common voltage generator generates a common voltage and provides the common voltage for directly electrically connecting to a connection point on the common line segment. Moreover, the transfer timing delays of transferring the common voltage from the connection point to the first common voltage transferring line and the last common voltage transferring line are the same.
摘要:
A frequency conversion correction circuit for an electrophoretic display (EPD) which has a control circuit to capture pixel signals of a next picture and gets a corresponding update signal from a look up table to be output, and a driving circuit to provide a plurality set of potential difference signals corresponding to a plurality set of electrodes of an EPD panel according to the update signal. The EPD further has an environment detection device and a duty frequency judgment unit. The environment detection device detects the operation environments of the EPD and gets an environment parameter. The duty frequency judgment unit compares the preset signal value sections where the environment parameter is located and generates a duty frequency signal and sends to the driving circuit. The driving circuit changes and outputs the frequency of the potential difference signals in a fixed frame time according to the duty frequency signal.