ELECTRO-PHORETIC DISPLAY APPARATUS
    2.
    发明申请
    ELECTRO-PHORETIC DISPLAY APPARATUS 审中-公开
    电子显示设备

    公开(公告)号:US20120098740A1

    公开(公告)日:2012-04-26

    申请号:US13225475

    申请日:2011-09-04

    IPC分类号: G09G3/34

    CPC分类号: G09G3/344 G09G2300/08

    摘要: An electro-phoretic display apparatus is disclosed. The electro-phoretic display apparatus has a plurality of pixel units and is coupled to an alternating current (AC) common voltage. The electro-phoretic display apparatus includes a switching unit coupled between a path of a plurality of storage capacitors in the pixel units and the common voltage. The switching unit is turned off according to a control signal before the common voltage carries out a transition action. The switching unit is turned on according to the control signal after the common voltage carries out the transition action.

    摘要翻译: 公开了一种电泳显示装置。 电泳显示装置具有多个像素单元并且耦合到交流(AC)公共电压。 电泳显示装置包括耦合在像素单元中的多个存储电容器的路径与公共电压之间的开关单元。 在公共电压执行转换动作之前,根据控制信号关闭开关单元。 在公共电压执行转换动作之后,根据控制信号将开关单元导通。

    DISPLAY CONTROLLER SYSTEM
    3.
    发明申请
    DISPLAY CONTROLLER SYSTEM 审中-公开
    显示控制器系统

    公开(公告)号:US20110063314A1

    公开(公告)日:2011-03-17

    申请号:US12882094

    申请日:2010-09-14

    IPC分类号: G09G5/39

    CPC分类号: G09G5/399 G09G3/344

    摘要: A display controller system with a memory controller and buffers is described. The system enables transferring data from the main memory of the CPU to the image memory without interfering the image updating. As a result, the present invention may allow continuously updating the display image and continuously writing new image data from CPU to the image memory which improves overall system performance.

    摘要翻译: 描述了具有存储器控制器和缓冲器的显示控制器系统。 该系统能够将数据从CPU的主存储器传输到图像存储器,而不会影响图像更新。 结果,本发明可以允许连续地更新显示图像并且连续地将新的图像数据从CPU写入图像存储器,从而提高整个系统性能。

    Method for forming a shallow trench isolation structure with reduced stress
    4.
    发明申请
    Method for forming a shallow trench isolation structure with reduced stress 有权
    用于形成具有减小应力的浅沟槽隔离结构的方法

    公开(公告)号:US20060128115A1

    公开(公告)日:2006-06-15

    申请号:US11076908

    申请日:2005-03-11

    申请人: Wen-Pin Chiu

    发明人: Wen-Pin Chiu

    IPC分类号: H01L21/76

    CPC分类号: H01L21/76224

    摘要: A method for forming a shallow trench isolation (STI) structure with reduced stress is described. An amorphous silicon layer is deposited on a trench surface of a shallow trench isolation structure, and the amorphous silicon is then oxidized by thermal oxidation to form a liner oxide. The thickness of the liner oxide is uniform to reduce stress caused by a liner oxide having non-uniform thickness in the prior art, and the leakage risk between the semiconductor devices can thus be prevented.

    摘要翻译: 描述了一种形成具有减小应力的浅沟槽隔离(STI)结构的方法。 非晶硅层沉积在浅沟槽隔离结构的沟槽表面上,然后通过热氧化氧化非晶硅以形成衬里氧化物。 衬垫氧化物的厚度是均匀的,以减少由现有技术中具有不均匀厚度的衬垫氧化物引起的应力,从而可以防止半导体器件之间的泄漏风险。

    Method for improving atomic layer deposition process and the device thereof
    5.
    发明申请
    Method for improving atomic layer deposition process and the device thereof 审中-公开
    改善原子层沉积工艺的方法及其装置

    公开(公告)号:US20060013954A1

    公开(公告)日:2006-01-19

    申请号:US10952293

    申请日:2004-09-28

    申请人: Wen-Pin Chiu

    发明人: Wen-Pin Chiu

    IPC分类号: C23C16/00

    摘要: A method for improving an atomic layer deposition process and the device thereof are described. A shield is first formed in a chamber to divide the chamber into a first sub-chamber and a second sub-chamber. Then a first precursor gas and a second precursor gas are introduced into the first sub-chamber and the second sub-chamber, respectively. A wafer is transferred into the first sub-chamber. When the surface of the wafer is saturated with the first precursor gas, the wafer is moved into the second sub-chamber by rotating a spindle, and the first precursor gas reacts with the second precursor gas. Further, the shield is employed to remove the excess first precursor gas and the unreacted second precursor gas. Subsequently, another wafer is transferred into the first sub-chamber, and hence two wafers are treated simultaneously to increase the throughput of the process.

    摘要翻译: 描述了一种用于改进原子层沉积工艺的方法及其装置。 首先在腔室中形成屏蔽,以将腔室分成第一子室和第二子室。 然后分别将第一前体气体和第二前体气体引入第一子室和第二子室。 将晶片转移到第一子室中。 当晶片的表面被第一前体气体饱和时,通过旋转主轴将晶片移动到第二子室中,并且第一前体气体与第二前体气体反应。 此外,使用屏蔽来去除多余的第一前体气体和未反应的第二前体气体。 随后,将另一个晶片转移到第一子室中,因此同时处理两个晶片以增加该工艺的生产量。

    [IONIZED PHYSICAL VAPOR DEPOSITION PROCESS AND APPARATUS THEREOF]
    6.
    发明申请
    [IONIZED PHYSICAL VAPOR DEPOSITION PROCESS AND APPARATUS THEREOF] 审中-公开
    [离子化物理蒸发沉积过程及其装置]

    公开(公告)号:US20050006232A1

    公开(公告)日:2005-01-13

    申请号:US10605160

    申请日:2003-09-12

    申请人: WEN-PIN CHIU

    发明人: WEN-PIN CHIU

    摘要: An ionized physical vapor deposition (I-PVD) process is provided. A plasma reaction chamber is provided. The plasma reaction chamber comprises a metal target and a wafer pedestal set up on the top and bottom section inside the chamber, an ionization unit set up between the target and the wafer pedestal and a conductive mesh set up between the ionization unit and the wafer pedestal. A wafer is put on the wafer pedestal. Thereafter, a negative bias voltage is applied to the metal target and a smaller negative bias voltage is applied to the conductive mesh to deposit a thin film over the wafer. The ionized metallic atoms inside the chamber accelerate towards the conductive mesh but decelerate after passing though the mesh so that step coverage of the deposited thin film is improved without damaging the wafer through ion bombardments.

    摘要翻译: 提供电离物理气相沉积(I-PVD)工艺。 提供等离子体反应室。 等离子体反应室包括设置在室内的顶部和底部的金属靶和晶片基座,设置在靶和晶片基座之间的电离单元和设置在电离单元和晶片基座之间的导电网 。 将晶片放在晶片基座上。 此后,向金属靶施加负偏置电压,并且向导电网施加较小的负偏压,以在晶片上沉积薄膜。 室内的电离金属原子朝向导电网加速,但在穿过网之后减速,从而提高沉积薄膜的阶梯覆盖,而不会通过离子轰击而损坏晶片。

    Tungsten deposition process
    7.
    发明授权
    Tungsten deposition process 有权
    钨沉积工艺

    公开(公告)号:US06464778B2

    公开(公告)日:2002-10-15

    申请号:US09761881

    申请日:2001-01-17

    申请人: Wen Pin Chiu

    发明人: Wen Pin Chiu

    IPC分类号: C30B2514

    CPC分类号: C23C16/14 H01L21/28556

    摘要: A tungsten deposition process. A crystal growth step is carried out in a reaction chamber to form a tungsten crystal layer over a substrate using tungsten hexafluoride, silane and nitrogen as reactive gases. An intermediate step is conducted such that the supply of tungsten hexafluoride to the reaction chamber is cut but the supply of silane is continued. Furthermore, nitrogen is passed into the reaction chamber selectively. A main deposition step is finally conducted to form a tungsten layer over the tungsten crystal layer using tungsten hexafluoride, hydrogen and nitrogen as reactive gases.

    摘要翻译: 钨沉积工艺。 在反应室中进行晶体生长步骤以在使用六氟化钨,硅烷和氮作为反应气体的基板上形成钨晶体层。 进行中间步骤,使得向反应室供应六氟化钨,但是继续供应硅烷。 此外,氮气选择性地进入反应室。 最后进行主沉积步骤,使用六氟化钨,氢和氮作为反应气体在钨晶体层上形成钨层。

    ELECTRO-PHORETIC DISPLAY APPARATUS
    9.
    发明申请
    ELECTRO-PHORETIC DISPLAY APPARATUS 有权
    电子显示设备

    公开(公告)号:US20120099180A1

    公开(公告)日:2012-04-26

    申请号:US13226501

    申请日:2011-09-07

    IPC分类号: G02F1/167

    摘要: An electro-phoretic display apparatus is disclosed. The electro-phoretic display apparatus mentioned above includes a plurality of pixel unit lines, a plurality of common voltage transferring lines, and a common voltage generator. The common voltage transferring lines extend and connect to a common line segment directly along a layout direction. The common voltage generator generates a common voltage and provides the common voltage for directly electrically connecting to a connection point on the common line segment. Moreover, the transfer timing delays of transferring the common voltage from the connection point to the first common voltage transferring line and the last common voltage transferring line are the same.

    摘要翻译: 公开了一种电泳显示装置。 上述电泳显示装置包括多个像素单位线,多个公共电压传输线和公共电压发生器。 公共电压传输线直接沿着布局方向延伸并连接到公共线段。 公共电压发生器产生公共电压并提供公共电压,用于直接电连接到公共线路段上的连接点。 此外,将公共电压从连接点传送到第一公共电压传输线和最后的公共电压传输线的传送定时延迟是相同的。

    Frequency conversion correction circuit for electrophoretic displays
    10.
    发明授权
    Frequency conversion correction circuit for electrophoretic displays 有权
    电泳显示器的变频校正电路

    公开(公告)号:US07859742B1

    公开(公告)日:2010-12-28

    申请号:US12629663

    申请日:2009-12-02

    IPC分类号: G02B26/00 G09G3/34 G09G5/00

    摘要: A frequency conversion correction circuit for an electrophoretic display (EPD) which has a control circuit to capture pixel signals of a next picture and gets a corresponding update signal from a look up table to be output, and a driving circuit to provide a plurality set of potential difference signals corresponding to a plurality set of electrodes of an EPD panel according to the update signal. The EPD further has an environment detection device and a duty frequency judgment unit. The environment detection device detects the operation environments of the EPD and gets an environment parameter. The duty frequency judgment unit compares the preset signal value sections where the environment parameter is located and generates a duty frequency signal and sends to the driving circuit. The driving circuit changes and outputs the frequency of the potential difference signals in a fixed frame time according to the duty frequency signal.

    摘要翻译: 一种用于电泳显示器(EPD)的频率转换校正电路,其具有控制电路,用于捕获下一个图像的像素信号,并获得来自查询表的相应更新信号以输出;以及驱动电路,提供多组 根据更新信号对应于EPD面板的多组电极的电位差信号。 EPD还具有环境检测装置和占空频率判定单元。 环境检测设备检测EPD的操作环境并获取环境参数。 占空频率判断单元将环境参数所在的预置信号值区间进行比较,生成占空比频率信号,发送给驱动电路。 驱动电路根据占空比频率信号在固定帧时间改变并输出电位差信号的频率。