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    Memory cell and memory device using the same
    3.
    发明授权
    Memory cell and memory device using the same 有权
    内存单元和内存设备使用相同

    公开(公告)号：US08493768B2

    公开(公告)日：2013-07-23

    申请号：US13300688

    申请日：2011-11-21

    Applicant: Chunwon Byun ,  ByeongHoon Kim ,  Sung Min Yoon ,  Shinhyuk Yang ,  Min Ki Ryu ,  Chi-Sun Hwang ,  Sang-Hee Park ,  Kyoung Ik Cho

    Inventor： Chunwon Byun ,  ByeongHoon Kim ,  Sung Min Yoon ,  Shinhyuk Yang ,  Min Ki Ryu ,  Chi-Sun Hwang ,  Sang-Hee Park ,  Kyoung Ik Cho

    IPC: G11C11/22

    CPC classification number: G11C11/22

    Abstract: Provided is a memory cell including: a ferroelectric transistor; a plurality of switching elements electrically connected to the ferroelectric transistor; and a plurality of control lines for transmitting individual control signals to each of the plurality of switching element for separately controlling the plurality of switching elements. The plurality of switching elements are configured to be separately controlled on the basis of the individual control signals so as to prevent each electrode of the ferroelectric transistor from being floated.

    Abstract translation: 提供一种存储单元，包括：铁电晶体管; 电连接到所述铁电晶体管的多个开关元件; 以及多个控制线，用于将各个控制信号发送到多个开关元件中的每一个，用于分别控制多个开关元件。 多个开关元件被配置为基于各个控制信号单独控制，以防止铁电晶体管的每个电极浮动。

    Method for fabricating phase change memory device using solid state reaction
    4.
    发明授权
    Method for fabricating phase change memory device using solid state reaction 有权
    使用固态反应制造相变存储器件的方法

    公开(公告)号：US08470719B2

    公开(公告)日：2013-06-25

    申请号：US13110579

    申请日：2011-05-18

    Applicant: Seung Yun Lee ,  Young Sam Park ,  Sung Min Yoon ,  Soon Won Jung ,  Byoung Gon Yu

    Inventor： Seung Yun Lee ,  Young Sam Park ,  Sung Min Yoon ,  Soon Won Jung ,  Byoung Gon Yu

    IPC: H01L21/461 ,  H01L21/06

    CPC classification number: H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1608 ,  H01L45/1666

    Abstract: Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.

    Abstract translation: 提供了一种非易失性存储器件及其制造方法，其中使用固态反应形成相变层以减少可编程体积，从而降低功耗。 该装置包括第一反应物层，形成在第一反应物层上的第二反应物层和由形成第一反应物层的材料与第一反应物层之间的固态反应形成在第一和第二反应物层之间的相变层 形成第二反应物层的材料。 相变存储器件消耗低功率并以高速运行。

    TRANSPARENT NONVOLATILE MEMORY THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    5.
    发明申请
    TRANSPARENT NONVOLATILE MEMORY THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    透明非易失性存储器薄膜晶体管及其制造方法

    公开(公告)号：US20120225500A1

    公开(公告)日：2012-09-06

    申请号：US13469558

    申请日：2012-05-11

    Applicant: Sung Min YOON ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

    Inventor： Sung Min YOON ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

    IPC: H01L51/40

    CPC classification number: H01L21/28291 ,  H01L29/78391 ,  H01L29/7869

    Abstract: Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

    Abstract translation: 提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。 存储TFT包括设置在透明基板上的源极和漏极。 透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。 有机铁电薄层设置在透明半导体薄层上。 栅电极与透明半导体薄层对准地设置在有机铁电薄层上。 因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件 温度过程。

    Transparent nonvolatile memory thin film transistor and method of manufacturing the same
    6.
    发明授权
    Transparent nonvolatile memory thin film transistor and method of manufacturing the same 有权
    透明非易失性存储薄膜晶体管及其制造方法

    公开(公告)号：US08198625B2

    公开(公告)日：2012-06-12

    申请号：US12555986

    申请日：2009-09-09

    Applicant: Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

    Inventor： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

    IPC: H01L35/24

    CPC classification number: H01L21/28291 ,  H01L29/78391 ,  H01L29/7869

    Abstract: Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

    Abstract translation: 提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。 存储TFT包括设置在透明基板上的源极和漏极。 透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。 有机铁电薄层设置在透明半导体薄层上。 栅电极与透明半导体薄层对准地设置在有机铁电薄层上。 因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件 温度过程。

    Computer system, method, and medium for switching operating system
    9.
    发明授权
    Computer system, method, and medium for switching operating system 有权
    计算机系统，方法和切换操作系统的介质

    公开(公告)号：US07886136B2

    公开(公告)日：2011-02-08

    申请号：US11131316

    申请日：2005-05-18

    Applicant: Sung-min Yoon

    Inventor： Sung-min Yoon

    IPC: G06F9/24

    CPC classification number: G06F9/441 ,  G06F1/3203 ,  G06F9/4418

    Abstract: An operating system switching method in a computer system having at least two operating systems is provided. The operating system switching method may include receiving a command of switching a first operating system that is currently running to a second operating system, causing the computer system to make a transition to a low-power sleeping state in response to the command, and booting the computer system using the second operating system in the transitioned state.

    Abstract translation: 提供了具有至少两个操作系统的计算机系统中的操作系统切换方法。 操作系统切换方法可以包括接收将当前正在运行的第一操作系统切换到第二操作系统的命令，使得计算机系统响应于该命令而转换到低功率休眠状态，并且引导 计算机系统使用第二个操作系统处于转换状态。

    Encapsulated organic luminescent display panel and method for manufacturing the same
    10.
    发明授权
    Encapsulated organic luminescent display panel and method for manufacturing the same 有权
    封装有机发光显示面板及其制造方法

    公开(公告)号：US07867811B2

    公开(公告)日：2011-01-11

    申请号：US12371203

    申请日：2009-02-13

    Applicant: Gi Heon Kim ,  Sung Min Yoon ,  In Kyu You ,  Kyu Ha Baek ,  Kyung Soo Suh

    Inventor： Gi Heon Kim ,  Sung Min Yoon ,  In Kyu You ,  Kyu Ha Baek ,  Kyung Soo Suh

    IPC: H01L21/00

    CPC classification number: H01L51/5259 ,  H01L27/322 ,  H01L51/5036 ,  H01L51/5246 ,  H01L51/525

    Abstract: Provided is a display panel comprised of a white color organic luminescent element and a color filter for full color implementation, wherein a substrate in which an organic luminescent element is formed and a color filter are assembled and fixed to face each other with an adhesive pattern therebetween, and liquid oil is filled between the color filter and the substrate inside of the adhesive pattern so as to block external moisture or oxygen, so that deterioration of luminous characteristics due to the external moisture or oxygen may be prevented by encapsulating the organic luminescent element and the color filter with the liquid oil, which leads to enhance reliability and stability of the element, and also allows the encapsulation process to be performed with relatively simple steps and low cost.

    Abstract translation: 提供了一种由白色有机发光元件和用于全色实现的滤色器组成的显示面板，其中形成有机发光元件的基板和滤色器以其中的粘合剂图案组装和固定成彼此面对 ，并且在滤色器和粘合剂图案内部的基板之间填充液体油以阻挡外部水分或氧气，从而可以通过封装有机发光元件来防止由于外部水分或氧气引起的发光特性的劣化，以及 具有液体油的滤色器，这提高了元件的可靠性和稳定性，并且还允许以相对简单的步骤和低成本执行封装过程。

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