公开(公告)号：US20080202792A1

公开(公告)日：2008-08-28

申请号：US12113195

申请日：2008-04-30

申请人： Keith E. Fogel ,  Balaram Ghosal ,  Sung K. Kang ,  Stephen Kilpatrick ,  Paul A. Lauro ,  Henry A. Nye ,  Da-Yuan Shih ,  Donna S. Zupanski-Nielsen

发明人： Keith E. Fogel ,  Balaram Ghosal ,  Sung K. Kang ,  Stephen Kilpatrick ,  Paul A. Lauro ,  Henry A. Nye ,  Da-Yuan Shih ,  Donna S. Zupanski-Nielsen

IPC分类号： H01B5/00

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01055 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/00014

摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

公开(公告)号：US20080008900A1

公开(公告)日：2008-01-10

申请号：US11860270

申请日：2007-09-24

申请人： Yu-Ting Cheng ,  Stefanie Chiras ,  Donald Henderson ,  Sung-Kwon Kang ,  Stephen Kilpatrick ,  Henry Nye ,  Carlos Sambucetti ,  Da-Yuan Shih

发明人： Yu-Ting Cheng ,  Stefanie Chiras ,  Donald Henderson ,  Sung-Kwon Kang ,  Stephen Kilpatrick ,  Henry Nye ,  Carlos Sambucetti ,  Da-Yuan Shih

IPC分类号： H01L29/12

CPC分类号： B32B15/01 ,  Y10T428/12528 ,  Y10T428/31681

摘要： A ball-limiting metallurgy includes a substrate, a barrier layer formed over the substrate, an adhesion layer formed over the barrier layer, a first solderable layer formed over the adhesion layer, a diffusion barrier layer formed over the adhesion layer, and a second solderable layer formed over the diffusion barrier layer.

摘要翻译： 限球冶金包括基板，在基板上形成的阻挡层，形成在阻挡层上的粘合层，形成在粘合层上的第一可焊层，形成在粘合层上的扩散阻挡层，以及第二可焊接 层形成在扩散阻挡层上。

公开(公告)号：US20050238906A1

公开(公告)日：2005-10-27

申请号：US11167277

申请日：2005-06-28

申请人： Emanuel Cooper ,  Charles Goldsmith ,  Stephen Kilpatrick ,  Carmen Mojica ,  Henry Nye

发明人： Emanuel Cooper ,  Charles Goldsmith ,  Stephen Kilpatrick ,  Carmen Mojica ,  Henry Nye

IPC分类号： C23C2/04 ,  C23C2/08 ,  H05K3/34 ,  B32B15/01 ,  C25D3/60

CPC分类号： C23C2/04 ,  C23C2/08 ,  H05K3/3463 ,  H05K3/3473 ,  H05K2203/073 ,  Y10S428/936 ,  Y10T428/12493 ,  Y10T428/12528 ,  Y10T428/12708

摘要： A first metal is plated onto a substrate comprising a second metal by immersing the substrate into a bath comprising a compound of the first metal and an organic diluent. The second metal is more electropositive than the first metal. The organic diluent has a boiling point higher than a eutectic point in a phase diagram of the first and second metals. The bath is operated above the eutectic point but below the melting point of the second metal. For example, bismuth is immersion plated onto lead-free tin-based solder balls, and subsequently redistributed by fluxless reflow. Plated structures are also provided.

摘要翻译： 将第一金属通过将基底浸入包含第一金属和有机稀释剂的化合物的浴中而被镀在包含第二金属的基材上。 第二种金属比第一种金属更具有正电性。 在第一和第二金属的相图中，有机稀释剂的沸点高于共晶点。 该浴液在共晶点以上运行，但低于第二种金属的熔点。 例如，将铋浸渍在无铅锡基焊球上，随后通过无助焊回流重新分布。 还提供镀层结构。

公开(公告)号：US20080203585A1

公开(公告)日：2008-08-28

申请号：US12113108

申请日：2008-04-30

申请人： Keith E. Fogel ,  Balaram Ghosal ,  Sung K. Kang ,  Stephen Kilpatrick ,  Paul A. Lauro ,  Henry A. Nye ,  Da-Yuan Shih ,  Donna S. Zupanski-Nielsen

发明人： Keith E. Fogel ,  Balaram Ghosal ,  Sung K. Kang ,  Stephen Kilpatrick ,  Paul A. Lauro ,  Henry A. Nye ,  Da-Yuan Shih ,  Donna S. Zupanski-Nielsen

IPC分类号： H01L23/52

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01055 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/00014

摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

公开(公告)号：US20050026450A1

公开(公告)日：2005-02-03

申请号：US10604560

申请日：2003-07-30

申请人： Emanuel Cooper ,  John Cotte ,  Lisa Fanti ,  David Eichstadt ,  Stephen Kilpatrick ,  Henry Nye ,  Donna Zupanski-Nielsen

发明人： Emanuel Cooper ,  John Cotte ,  Lisa Fanti ,  David Eichstadt ,  Stephen Kilpatrick ,  Henry Nye ,  Donna Zupanski-Nielsen

IPC分类号： H01L21/302 ,  H01L21/44 ,  H01L21/461 ,  H01L21/60

CPC分类号： H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05171 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/00014

摘要： A method is provided for removing exposed seed layers in the fabrication of solder interconnects on electronic components such as semiconductor wafers without damaging the interconnects or underlying wafer substrate and with a high wafer yield. The solder interconnects are lead free or substantially lead free and typically contain Sn. An oxalic acid solution is used to contact the wafer after an etching step to remove part of the seed layer. The seed layer is typically a Cu containing layer with a lower barrier layer containing barrier metals such as Ti, Ta and W. The lower barrier layer remains after the etch and the oxalic acid solution inhibits the formation of Sn compounds on the barrier layer surface which compounds may mask the barrier layer and the barrier layer etchant resulting in incomplete barrier layer removal on the wafer surface. Any residual conductive barrier layer can cause shorts and other wafer problems and result in a lower wafer yield. An electroetch is preferred to remove the portion of the seed layer overlying the lower barrier layer.

摘要翻译： 提供了一种在电子部件如半导体晶片制造焊料互连件中去除暴露的种子层的方法，而不会损坏互连或下面的晶片衬底并以高的晶片产量。 焊料互连是无铅的或基本上无铅的，并且通常含有Sn。 在蚀刻步骤之后，使用草酸溶液接触晶片以除去部分种子层。 种子层通常是含Cu层，其具有包含阻挡金属如Ti，Ta和W的下阻挡层。在蚀刻后保留下阻挡层，并且草酸溶液抑制在阻挡层表面上形成Sn化合物 化合物可以掩蔽阻挡层和阻挡层蚀刻剂，导致晶片表面上不完全的阻挡层去除。 任何残留的导电阻挡层可能导致短路和其他晶片问题，并导致较低的晶圆产量。 优选去除电子蚀刻以去除覆盖在下阻挡层上的种子层的部分。

公开(公告)号：US20120012642A1

公开(公告)日：2012-01-19

申请号：US13244576

申请日：2011-09-25

申请人： Keith E. Fogel ,  Balaram Ghosal ,  Sung K. Kang ,  Stephen Kilpatrick ,  Paul A. Lauro ,  Henry A. Nye, III ,  Da-Yuan Shih ,  Donna S. Zupanski-Nielsen

发明人： Keith E. Fogel ,  Balaram Ghosal ,  Sung K. Kang ,  Stephen Kilpatrick ,  Paul A. Lauro ,  Henry A. Nye, III ,  Da-Yuan Shih ,  Donna S. Zupanski-Nielsen

IPC分类号： B23K35/14 ,  B23K35/24

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01055 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/00014

摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components. With a two-layer ball-limiting composition comprising an adhesion/reaction barrier layer, wherein the adhesion/reaction barrier layer serves both as an adhesion layer and a reaction barrier layer, the adhesion/reaction barrier layer can be comprised of a material selected from the group consisting of Zr and ZrN

摘要翻译： 一种适于将微电子器件芯片倒装连接到封装的互连结构，包括二层，三层或四层限球组合物，包括粘附/反应阻挡层，并且具有与含锡的组分反应的焊料可湿性层 无铅焊料，使得可焊接层在焊接期间可以完全消耗，但在焊接期间与无铅焊料接触后，阻挡层保持不变。 一个或多个无铅焊料球选择性地位于焊料润湿层上，该无铅焊球包含锡作为主要成分和一种或多种合金成分。 使用包含粘合/反应阻挡层的双层球限制组合物，其中粘附/反应阻挡层既用作粘合层又用作反应阻挡层，粘合/反应阻挡层可以由选自 由Zr和ZrN组成的组

公开(公告)号：US20050224966A1

公开(公告)日：2005-10-13

申请号：US10815103

申请日：2004-03-31

申请人： Keith Fogel ,  Balaram Ghosal ,  Sung Kang ,  Stephen Kilpatrick ,  Paul Lauro ,  Henry Nye ,  Da-Yuan Shih ,  Donna Zupanski-Nielsen

发明人： Keith Fogel ,  Balaram Ghosal ,  Sung Kang ,  Stephen Kilpatrick ,  Paul Lauro ,  Henry Nye ,  Da-Yuan Shih ,  Donna Zupanski-Nielsen

IPC分类号： H01L21/60 ,  H01L23/48 ,  H01L23/485 ,  H05K3/34

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01055 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/00014

摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

摘要翻译： 一种适于将微电子器件芯片倒装连接到封装的互连结构，包括二层，三层或四层限球组合物，包括粘附/反应阻挡层，并且具有与含锡的组分反应的焊料可湿性层 无铅焊料，使得可焊接层在焊接期间可以完全消耗，但在焊接期间与无铅焊料接触后，阻挡层保持不变。 一个或多个无铅焊料球选择性地位于焊料润湿层上，该无铅焊球包含锡作为主要成分和一种或多种合金成分。

公开(公告)号：US20050118437A1

公开(公告)日：2005-06-02

申请号：US10724938

申请日：2003-12-01

申请人： Yu-Ting Cheng ,  Stefanie Chiras ,  Donald Henderson ,  Sung-Kwon Kang ,  Stephen Kilpatrick ,  Henry Nye ,  Carlos Sambucetti ,  Da-Yuan Shih

发明人： Yu-Ting Cheng ,  Stefanie Chiras ,  Donald Henderson ,  Sung-Kwon Kang ,  Stephen Kilpatrick ,  Henry Nye ,  Carlos Sambucetti ,  Da-Yuan Shih

IPC分类号： B32B15/08 ,  C23C14/00

CPC分类号： B32B15/01 ,  Y10T428/12528 ,  Y10T428/31681

摘要： A ball-limiting metallurgy includes a substrate, a barrier layer formed over the substrate, an adhesion layer formed over the barrier layer, a first solderable layer formed over the adhesion layer, a diffusion barrier layer formed over the adhesion layer, and a second solderable layer formed over the diffusion barrier layer.

摘要翻译： 限球冶金包括基板，在基板上形成的阻挡层，形成在阻挡层上的粘合层，形成在粘合层上的第一可焊层，形成在粘合层上的扩散阻挡层，以及第二可焊接 层形成在扩散阻挡层上。

公开(公告)号：US20050104208A1

公开(公告)日：2005-05-19

申请号：US10707021

申请日：2003-11-14

申请人： James Bartelo ,  Tien-Jen Cheng ,  David Eichstadt ,  Charles Goldsmith ,  Jonathan Griffith ,  Donald Henderson ,  Roger Quon ,  Stephen Kilpatrick

发明人： James Bartelo ,  Tien-Jen Cheng ,  David Eichstadt ,  Charles Goldsmith ,  Jonathan Griffith ,  Donald Henderson ,  Roger Quon ,  Stephen Kilpatrick

IPC分类号： H01L23/485 ,  H01L23/48

CPC分类号： H01L24/10 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05181 ,  H01L2224/05647 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013

摘要： Disclosed is an improved integrated circuit structure that has internal circuitry and interconnects (e.g. C4, etc.) on an external portion of the structure. With the invention, these interconnects have a metal layer on the external portion of the structure, a first copper layer on the metal layer, a barrier layer on the copper layer, a stabilizing copper layer on the barrier layer, and a tin-based solder bump on the barrier layer. The stabilizing copper layer has a sufficient amount of copper to balance the chemical potential gradient of copper across the barrier layer and prevent copper within the first copper layer from diffusing across the barrier layer. Alternatively, a sufficient amount of copper can be included within the tin-based solder bump to prevent copper from diffusing across the barrier layer. Thus, the tin-based solder bump comprises a copper rich solder alloy.

摘要翻译： 公开了一种改进的集成电路结构，其在该结构的外部部分上具有内部电路和互连（例如C4等）。 通过本发明，这些互连在结构的外部具有金属层，金属层上的第一铜层，铜层上的阻挡层，阻挡层上的稳定铜层和锡基焊料 在阻挡层上碰撞。 稳定铜层具有足够量的铜以平衡横跨阻挡层的铜的化学势梯度，并防止第一铜层内的铜扩散穿过势垒层。 或者，可以在锡基焊料凸块内包含足够量的铜，以防止铜在阻挡层上扩散。 因此，锡基焊料凸块包括富含铜的焊料合金。

公开(公告)号：US08026613B2

公开(公告)日：2011-09-27

申请号：US12113108

申请日：2008-04-30

申请人： Keith E. Fogel ,  Balaram Ghosal ,  Sung K. Kang ,  Stephen Kilpatrick ,  Paul A. Lauro ,  Henry A. Nye, III ,  Da-Yuan Shih ,  Donna S. Zupanski-Nielsen

发明人： Keith E. Fogel ,  Balaram Ghosal ,  Sung K. Kang ,  Stephen Kilpatrick ,  Paul A. Lauro ,  Henry A. Nye, III ,  Da-Yuan Shih ,  Donna S. Zupanski-Nielsen

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01055 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/00014

摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components. With a two-layer ball-limiting composition comprising an adhesion/reaction barrier layer, wherein the adhesion/reaction barrier layer serves both as an adhesion layer and a reaction barrier layer, the adhesion/reaction barrier layer can be comprised of a material selected from the group consisting of Zr and ZrN.

摘要翻译： 一种适于将微电子器件芯片倒装连接到封装的互连结构，包括二层，三层或四层限球组合物，包括粘附/反应阻挡层，并且具有与含锡的组分反应的焊料可湿性层 无铅焊料，使得可焊接层在焊接期间可以完全消耗，但在焊接期间与无铅焊料接触后，阻挡层保持不变。 一个或多个无铅焊料球选择性地位于焊料润湿层上，该无铅焊球包含锡作为主要成分和一种或多种合金成分。 使用包含粘合/反应阻挡层的双层球限制组合物，其中粘附/反应阻挡层既用作粘合层又用作反应阻挡层，粘合/反应阻挡层可以由选自 由Zr和ZrN组成的组。