Spacers for insulated glass units
    1.
    发明授权
    Spacers for insulated glass units 有权
    隔热玻璃单元隔板

    公开(公告)号:US08711465B2

    公开(公告)日:2014-04-29

    申请号:US13312057

    申请日:2011-12-06

    IPC分类号: G02F1/153

    摘要: This disclosure provides spacers for smart windows. In one aspect, a window assembly includes a first substantially transparent substrate having an optically switchable device on a surface of the first substrate. The optically switchable device includes electrodes. A first electrode of the electrodes has a length about the length of a side of the optically switchable device. The window assembly further includes a second substantially transparent substrate a metal spacer between the first and the second substrates. The metal spacer has a substantially rectangular cross section, with one side of the metal spacer including a recess configured to accommodate the length of the first electrode such that there is no contact between the first electrode and the metal spacer. A primary seal material bonds the first substrate to the metal spacer and bonds the second substrate to the metal spacer.

    摘要翻译: 本公开提供了用于智能窗口的间隔物。 在一个方面,一种窗口组件包括在第一基板的表面上具有光可切换装置的第一基本上透明的基板。 光学可切换装置包括电极。 电极的第一电极具有围绕光可切换装置的一侧的长度的长度。 窗组件还包括第二基本上透明的基底,在第一和第二基底之间的金属间隔物。 金属间隔件具有基本上矩形的横截面,金属间隔件的一侧包括凹部,该凹部被构造成适应第一电极的长度,使得在第一电极和金属间隔件之间不存在接触。 第一密封材料将第一基底结合到金属间隔物并将第二基底结合到金属间隔物上。

    Methods of providing an adhesion layer for adhesion of barrier and/or seed layers to dielectric films

    公开(公告)号:US20050181598A1

    公开(公告)日:2005-08-18

    申请号:US11105597

    申请日:2005-04-15

    申请人: Sridhar Kailasam

    发明人: Sridhar Kailasam

    摘要: A process for enhancing the adhesion of directly plateable materials to an underlying dielectric is demonstrated, so as to withstand damascene processing. Using diffusion barriers onto which copper can be deposited facilitates conventional electrolytic processing. An ultra-thin adhesion layer is applied to a degassed, pre-cleaned substrate. The degassed and pre-cleaned substrate is exposed to a precursor gas containing the adhesion layer, optionally deposited by a plasma-assisted CVD process, resulting in the deposition of an adhesion layer inside the exposed feature. The treated wafer is then coated with a diffusion barrier material, such as ruthenium, so that the adhesion layer reacts with incoming diffusion barrier atoms. The adhesion layer may be selectively bias-sputter etched prior to the deposition of the diffusion barrier layer. A copper layer is then deposited on the diffusion barrier layer.

    Resputtering process for eliminating dielectric damage
    7.
    发明授权
    Resputtering process for eliminating dielectric damage 有权
    用于消除电介质损伤的再溅射过程

    公开(公告)号:US07781327B1

    公开(公告)日:2010-08-24

    申请号:US11588586

    申请日:2006-10-26

    IPC分类号: H01L21/4763

    摘要: Methods of resputtering material from the wafer surface include at least one operation of resputtering material under a pressure of at least 10 mTorr. The methods can be used in conjunction with an iPVD apparatus, such as hollow cathode magnetron (HCM) or planar magnetron. The resputtered material may be a diffusion barrier material or a conductive layer material. The methods provide process conditions which minimize the damage to the dielectric layer during resputtering. The methods allow considerable etching of the diffusion barrier material at the via bottom, while not damaging exposed dielectric elsewhere on the wafer. Specifically, they provide a solution for the dielectric microtrenching problem occurring during conventional resputter process. Furthermore, the methods increase the etch rate to deposition rate ratio (E/D) and improve the etch back nonuniformity (EBNU) of resputter process. In general, the methods provide IC devices with higher reliability and decrease wafer manufacturing costs.

    摘要翻译: 从晶片表面重新溅射材料的方法包括在至少10mTorr的压力下重新溅射材料的至少一种操作。 该方法可以与iPVD装置结合使用,例如空心阴极磁控管(HCM)或平面磁控管。 所述重排材料可以是扩散阻挡材料或导电层材料。 该方法提供了在再溅射期间最小化对电介质层的损伤的工艺条件。 这些方法允许在通孔底部对扩散阻挡材料进行相当大的蚀刻,同时不损坏晶片上其他地方的暴露的电介质。 具体地说,它们提供了在常规的再溅射过程中发生的介电微切削问题的解决方案。 此外,这些方法将蚀刻速率提高到沉积速率比(E / D),并提高了回溅过程的回蚀不均匀性(EBNU)。 通常,这些方法为IC器件提供了更高的可靠性并降低了晶片制造成本。

    SPACERS FOR INSULATED GLASS UNITS
    9.
    发明申请
    SPACERS FOR INSULATED GLASS UNITS 有权
    绝缘玻璃单元隔板

    公开(公告)号:US20120147449A1

    公开(公告)日:2012-06-14

    申请号:US13312057

    申请日:2011-12-06

    IPC分类号: G02F1/155

    摘要: This disclosure provides spacers for smart windows. In one aspect, a window assembly includes a first substantially transparent substrate having an optically switchable device on a surface of the first substrate. The optically switchable device includes electrodes. A first electrode of the electrodes has a length about the length of a side of the optically switchable device. The window assembly further includes a second substantially transparent substrate a metal spacer between the first and the second substrates. The metal spacer has a substantially rectangular cross section, with one side of the metal spacer including a recess configured to accommodate the length of the first electrode such that there is no contact between the first electrode and the metal spacer. A primary seal material bonds the first substrate to the metal spacer and bonds the second substrate to the metal spacer.

    摘要翻译: 本公开提供了用于智能窗口的间隔物。 在一个方面,一种窗口组件包括在第一基板的表面上具有光可切换装置的第一基本上透明的基板。 光学可切换装置包括电极。 电极的第一电极具有围绕光可切换装置的一侧的长度的长度。 窗组件还包括第二基本上透明的基底,在第一和第二基底之间的金属间隔物。 金属间隔件具有基本上矩形的横截面,金属间隔件的一侧包括凹部,该凹部被构造成适应第一电极的长度,使得在第一电极和金属间隔件之间不存在接触。 第一密封材料将第一基底结合到金属间隔物并将第二基底结合到金属间隔物上。