公开(公告)号：US20140007933A1

公开(公告)日：2014-01-09

申请号：US13571807

申请日：2012-08-10

Applicant: Seoung Yoon RYU ,  Dong Ho KIM ,  Kee Seok NAM ,  Yong Soo JEONG ,  Jung Dae KWON ,  Sung Hun LEE ,  Jung Heum YUN ,  Gun Hwan LEE ,  Hyung Hwan JUNG ,  Sung Gyu PARK ,  Chang Su KIM ,  Jae Wook KANG ,  Keong Su LIM ,  Sang II PARK

Inventor： Seoung Yoon RYU ,  Dong Ho KIM ,  Kee Seok NAM ,  Yong Soo JEONG ,  Jung Dae KWON ,  Sung Hun LEE ,  Jung Heum YUN ,  Gun Hwan LEE ,  Hyung Hwan JUNG ,  Sung Gyu PARK ,  Chang Su KIM ,  Jae Wook KANG ,  Keong Su LIM ,  Sang II PARK

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/20

CPC classification number: H01L31/18 ,  H01L31/062 ,  H01L31/07 ,  H01L31/075 ,  H01L31/078 ,  H01L31/1804 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: Disclosed are a thin film solar cell and a method of manufacturing the thin film solar cell. The thin film solar cell according to an exemplary embodiment of the present invention thin film solar cell includes a substrate: a front electrode layer formed on the substrate; an oxide layer formed on the front electrode layer: a light absorbing layer (intrinsic layer) formed on the oxide layer; and a back electrode layer formed on the light absorbing layer, wherein the oxide layer is formed of a material selected from MoO2, WO2, V2O5, NiO and CrO3.

Abstract translation: 公开了薄膜太阳能电池和制造薄膜太阳能电池的方法。 根据本发明的薄膜太阳能电池的示例性实施例的薄膜太阳能电池包括基板：形成在基板上的前电极层; 形成在前电极层上的氧化物层：形成在氧化物层上的光吸收层（本征层） 以及形成在所述光吸收层上的背面电极层，其中所述氧化物层由选自MoO 2，WO 2，V 2 O 5，NiO和CrO 3的材料形成。

公开(公告)号：US07972875B2

公开(公告)日：2011-07-05

申请号：US11981380

申请日：2007-10-31

Applicant: John Rogers ,  Ralph Nuzzo ,  Matthew Meitl ,  Etienne Menard ,  Alfred J. Baca ,  Michael Motala ,  Jong-Hyun Ahn ,  Sang-II Park ,  Chang-Jae Yu ,  Heung-Cho Ko ,  Mark Stoykovich ,  Jongseung Yoon

Inventor： John Rogers ,  Ralph Nuzzo ,  Matthew Meitl ,  Etienne Menard ,  Alfred J. Baca ,  Michael Motala ,  Jong-Hyun Ahn ,  Sang-II Park ,  Chang-Jae Yu ,  Heung-Cho Ko ,  Mark Stoykovich ,  Jongseung Yoon

IPC: H01L21/00

CPC classification number: H01L25/50 ,  B81C2201/0185 ,  B82Y10/00 ,  H01L21/00 ,  H01L25/042 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14643 ,  H01L29/78603 ,  H01L29/78681 ,  H01L31/02005 ,  H01L31/02008 ,  H01L31/02168 ,  H01L31/02325 ,  H01L31/02327 ,  H01L31/0288 ,  H01L31/03046 ,  H01L31/043 ,  H01L31/0525 ,  H01L31/0543 ,  H01L31/0547 ,  H01L31/0693 ,  H01L31/0725 ,  H01L31/167 ,  H01L31/1804 ,  H01L31/1824 ,  H01L31/1868 ,  H01L31/1876 ,  H01L31/1892 ,  H01L33/005 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/30 ,  H01L33/483 ,  H01L33/52 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2933/0091 ,  H01S5/021 ,  H01S5/02284 ,  H01S5/183 ,  H01S5/3013 ,  H01S5/34326 ,  H01S5/423 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521 ,  H01L2924/00

Abstract: Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

Abstract translation: 提供了至少部分地通过基于印刷的组装和器件部件的集成制造的光学器件和系统。 在具体实施方案中，本发明提供包括大面积高性能宏电子器件的可印刷半导体元件的发光系统，光收集系统，光感测系统和光伏系统。 本发明的光学系统包括通过印刷技术组装，组织和/或与其它器件部件集成的半导体元件，所述打印技术表现出与使用常规高温处理方法制造的基于单晶半导体的器件相似的性能特征和功能。 本发明的光学系统具有通过提供一系列有用的装置功能的打印所访问的装置几何形状和构造，例如形状因子，部件密度和部件位置。 本发明的光学系统包括表现出一系列有用的物理和机械性能的装置和装置阵列，包括灵活性，可塑性，适形性和可拉伸性。

公开(公告)号：US20090251985A1

公开(公告)日：2009-10-08

申请号：US12483482

申请日：2009-06-12

Applicant: Sang II PARK ,  Shin Ho CHU

Inventor： Sang II PARK ,  Shin Ho CHU

IPC: G11C5/14 ,  G11C7/00

CPC classification number: G11C5/145 ,  H01L25/0657 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2225/06568 ,  H01L2924/15311

Abstract: A first signal input circuit outputs a first control signal in response to self-refresh and active signals. A second signal input circuit outputs a second control signal in response to the self-refresh and active signals. The power supply circuit applies a first supply voltage to an output terminal in response to the first control signal. An elevated voltage generator generates a elevated voltage by pumping a second supply voltage, and applies the elevated voltage to the output terminal, in response to the first and second control signals.

Abstract translation: 响应于自刷新和有效信号，第一信号输入电路输出第一控制信号。 第二信号输入电路响应于自刷新和有效信号而输出第二控制信号。 电源电路响应于第一控制信号向输出端施加第一电源电压。 升高的电压发生器通过泵浦第二电源电压产生升高的电压，并且响应于第一和第二控制信号将升高的电压施加到输出端子。

公开(公告)号：US20050029926A1

公开(公告)日：2005-02-10

申请号：US10901096

申请日：2004-07-29

Applicant: Sang-II Park ,  Jae-Bon Koo ,  Hun-Jung Lee

Inventor： Sang-II Park ,  Jae-Bon Koo ,  Hun-Jung Lee

IPC: H05B33/02 ,  H01L27/32 ,  H01L51/50 ,  H01L51/52 ,  H05B33/00 ,  H05B33/08 ,  H05B33/10 ,  H05B33/12 ,  H05B33/14 ,  H05B33/22

CPC classification number: H01L27/3244 ,  H01L51/5284 ,  H01L2251/5346

Abstract: A light-emitting display device the same includes an insulating substrate having a thin film transistor formed thereon. The thin film transistor includes a source electrode and/or a drain electrode. A passivation layer is formed on the insulating substrate over at least a portion of the thin film transistor, and has a via hole formed therein, which electrically contacts either the source electrode or the drain electrode. A pixel electrode is formed in the via hole. A light-blocking layer is formed over an entire upper surface of the passivation layer except for an area corresponding to the pixel electrode. A planarization layer is formed on an upper surface of the light-blocking layer except for an area corresponding to the pixel electrode.

Abstract translation: 其发光显示装置包括其上形成有薄膜晶体管的绝缘基板。 薄膜晶体管包括源电极和/或漏电极。 钝化层在薄膜晶体管的至少一部分上形成在绝缘基板上，并且在其中形成有与孔电极或漏电极电接触的通孔。 像素电极形成在通孔中。 除了对应于像素电极的区域之外，在钝化层的整个上表面上形成遮光层。 除了与像素电极对应的区域之外，在遮光层的上表面上形成平坦化层。

公开(公告)号：US20150351513A1

公开(公告)日：2015-12-10

申请号：US14297560

申请日：2014-06-05

Applicant: Sang II PARK

Inventor： Sang II PARK

IPC: A45C13/18

CPC classification number: A45C13/18 ,  A45C13/20 ,  E05B65/52 ,  E05B73/0005 ,  G08B13/14 ,  G08B13/149

Abstract: Disclosed herein is a bag with an anti-theft function which is used to temporarily store various valuables (a wallet, a cellular phone, a camera, a watch, etc.) or clothes in a crowded place, for example, a water play area such as a beach or a water park, and is configured such that the stored valuables or the bag itself can be prevented from being stolen. The bag according to the present invention includes an anti-theft means which fastens first and second zippers that openably close an opening of the bag body to each other and binds the bag body to a surrounding structure, whereby valuables (a wallet, a cellular phone, a camera, a watch, etc.) stored in the bag body not only can be prevented from being stolen but the bag itself can also be prevented from being stolen because it is bound to the surrounding structure.

Abstract translation: 本文公开了一种具有防盗功​​能的袋子，其用于临时存储各种贵重物品（钱包，手机，相机，手表等）或衣服在拥挤的地方，例如水上游乐区域 例如海滩或水上公园，并且被配置为使得可以防止存储的贵重物品或袋本身被盗。 根据本发明的袋包括防盗装置，其将第一和第二拉链紧固，所述拉链可打开地将袋体的开口彼此靠近并且将袋体绑定到周围结构，由此贵重物品（钱包，蜂窝电话 ，相机，手表等）不仅可以防止被盗，而且还可以防止袋本身因为与周围结构的束缚而被盗。

公开(公告)号：US20080080288A1

公开(公告)日：2008-04-03

申请号：US11819789

申请日：2007-06-29

Applicant: Sang-II Park ,  Saeng-Hwan Kim

Inventor： Sang-II Park ,  Saeng-Hwan Kim

IPC: G11C5/14

CPC classification number: G11C5/145 ,  G11C11/406 ,  G11C11/4074 ,  G11C2211/4067 ,  G11C2211/4068

Abstract: A semiconductor memory device includes: a plurality of cell array blocks; a boosted voltage driving unit for selectively supplying a boosted voltage to the cell array blocks; and a controller controlling a driving operation of the boosted voltage driving unit in response to a cell array block select signal.

Abstract translation: 半导体存储器件包括：多个单元阵列块; 升压电压驱动单元，用于选择性地向所述单元阵列块提供升压电压; 以及控制器，其响应于单元阵列块选择信号来控制升压电压驱动单元的驱动操作。

公开(公告)号：US06805602B2

公开(公告)日：2004-10-19

申请号：US10662393

申请日：2003-09-16

Applicant: Woo-Young So ,  Kyung-Jin Yoo ,  Sang-II Park

Inventor： Woo-Young So ,  Kyung-Jin Yoo ,  Sang-II Park

IPC: H01J924

CPC classification number: H01L27/12 ,  H01L27/1248 ,  H01L27/1288 ,  H01L27/32 ,  H01L29/78621

Abstract: A flat panel display device with improved electrical characteristics and a simplified manufacturing process is disclosed. The device includes a semiconductor layer formed on an insulating substrate; source and drain electrodes directly contacting both end portions of the semiconductor layer, respectively; a pixel electrode having an opening portion formed thereon; a first insulating layer formed over the remaining portion of the insulating substrate except for the opening portion; a gate electrode formed on a portion of the first insulating layer over the semiconductor layer; and source and drain regions formed in both end portions of the semiconductor layer.

Abstract translation: 公开了一种具有改善的电气特性和简化制造工艺的平板显示装置。 该器件包括形成在绝缘衬底上的半导体层; 源极和漏极分别直接接触半导体层的两个端部; 形成有开口部的像素电极; 除了所述开口部之外，形成在所述绝缘基板的剩余部分上的第一绝缘层; 形成在半导体层上的第一绝缘层的一部分上的栅电极; 以及形成在半导体层的两个端部中的源极和漏极区域。

公开(公告)号：US20050179829A1

公开(公告)日：2005-08-18

申请号：US11028588

申请日：2005-01-05

Applicant: Sang-II Park ,  Dong-Chan Shin ,  Hye-Dong Kim ,  Chang-Su Kim

Inventor： Sang-II Park ,  Dong-Chan Shin ,  Hye-Dong Kim ,  Chang-Su Kim

IPC: H05B33/10 ,  G09F9/30 ,  H01L21/336 ,  H01L27/32 ,  H01L29/786 ,  H01L51/50 ,  H01L51/52 ,  H01L51/56 ,  H05B33/22 ,  G02F1/136 ,  G02F1/1333

CPC classification number: H01L51/5284 ,  H01L27/3244 ,  H01L27/3248 ,  H01L51/56

Abstract: An organic electroluminescent display in which a black matrix with a concentration gradient of a transparent material and a metallic material is formed on the same surface as a pixel electrode. The black matrix and a pixel electrode of the organic electroluminescent display are formed using only one masking operation. The black matrix has a concentration gradient of a continuous gradient structure in which constituents of the transparent material are continuously decreased while constituents of the metallic material are continuously increased as a thickness of the black matrix is increased, a step gradient structure in which the constituents of the transparent material are gradually decreased while the constituents of the metallic material are gradually increased as the thickness of the black matrix is increased, or a multi-gradient structure in which the continuous gradient structure and/or the step gradient structure are repeated.

公开(公告)号：US20100012173A1

公开(公告)日：2010-01-21

申请号：US12568370

申请日：2009-09-28

Applicant: Seong Won Kwon ,  Joong Hwan Kwak ,  Sang II Park ,  Yang Ji Hwan ,  Sang Hwan Kim ,  Yoo Jin Lee ,  Jin Koog Shin ,  Koeng Su LIM

Inventor： Seong Won Kwon ,  Joong Hwan Kwak ,  Sang II Park ,  Yang Ji Hwan ,  Sang Hwan Kim ,  Yoo Jin Lee ,  Jin Koog Shin ,  Koeng Su LIM

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/1804 ,  H01L31/022466 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/1884 ,  Y02E10/547 ,  Y02P70/521

Abstract: Provided are an integrated thin-film solar cell and a method of manufacturing the same. The method comprises forming and patterning a conductive material to be adjacently spaced a predetermined distance apart from each other on a substrate; forming a solar cell (semiconductor) layer on the resultant substrate; obliquely depositing a first transparent conductive material on the solar cell layer; etching the solar cell layer using the first transparent conductive material as a mask; and obliquely depositing a second transparent conductive material on the resultant substrate, and electrically connecting the conductive material with the first transparent conductive material.

公开(公告)号：US20090073109A1

公开(公告)日：2009-03-19

申请号：US12198583

申请日：2008-08-26

Applicant: Ho-Sik Shin ,  Gi-Cherl Kim ,  Sang-II Park ,  Yong-Hoon Kwon

Inventor： Ho-Sik Shin ,  Gi-Cherl Kim ,  Sang-II Park ,  Yong-Hoon Kwon

IPC: G09G3/36

CPC classification number: G09G3/3426 ,  G09G3/3413 ,  G09G2320/041 ,  G09G2320/0633 ,  G09G2320/064 ,  G09G2320/0646 ,  G09G2360/16

Abstract: A backlight unit includes a substrate and has a plurality of light emitting areas. In each light emitting area, at least one light emitting diode and a bypass current path are connected in parallel between a connection node and a switching unit. The switching unit is configured to connect a selected one of the light emitting diode and the bypass unit to the connection node of the next light emitting area.

Abstract translation: 背光单元包括基板并具有多个发光区域。 在每个发光区域中，至少一个发光二极管和旁路电流路径并联连接在连接节点和切换单元之间。 开关单元被配置为将所选择的发光二极管和旁路单元中的一个连接到下一个发光区域的连接节点。