Abstract:
An organic light emitting display device and a method of fabricating the same are provided. A trench is formed in a planarization layer, and then a first electrode is formed to have opposite ends in the trench, thereby reducing a height difference between the planarization layer and the first electrode. That is, the thickness of a pixel defining layer formed on the first electrode may be reduced by reducing or minimizing protrusion of the first electrode with respect to the planarization layer. Thus, transfer efficiency can be increased when an organic layer is formed by a laser induced thermal imaging method, and reliability of a device can be improved by reducing or preventing thermal damage of the organic layer and open defects.
Abstract:
Provided is an organic light emitting diode (OLED) display device, including: a substrate; a semiconductor layer on the substrate; a gate insulating layer on the substrate with the semiconductor layer; a gate electrode on a region of the gate insulating layer corresponding to the semiconductor layer and insulated from the semiconductor layer; source and drain electrodes connected to the semiconductor layer; metal layers on the source and drain electrodes, spaced a distance apart from each other, and including nickel; a passivation layer over the gate insulating layer; a first electrode on the passivation layer, and electrically connected to the metal layers; an organic layer on the first electrode; and a second electrode on the organic layer.
Abstract:
Provided is an organic light emitting diode (OLED) including a substrate, a first electrode, a second electrode, and an organic layer disposed between the first and second electrodes. The first electrode includes an aluminum (Al)-based reflective film and a transparent conductive film that contacts the Al-based reflective film. The Al-based reflective film includes aluminum, a first element and nickel (Ni). In this structure, galvanic corrosion, which occurs due to a potential difference between electrodes, may not occur between the Al-based reflective film 5a and the transparent conductive film 5b. Accordingly, deterioration of the quality of OLED is prevented.
Abstract:
A method of manufacturing a thin film transistor (TFT) which is manufactured such that source and drain electrodes directly contact source and drain regions without contact holes.
Abstract:
An organic light emitting display device including an anode having a multi-layer structure which can be manufactured using a simple process, has good hole transfer properties and high reflectivity, and prevents energy loss due to a drop in voltage. The organic light emitting display device includes a substrate, a thin film transistor formed on the substrate and including source and drain electrodes, a first anode patterned simultaneously with the source and drain electrodes of the thin film transistor, formed integrally with the source or drain electrode, and made out of a conductive material having a low resistance, a second anode formed on the first anode, and made out of a conductive material having a high work function, an organic layer formed on the second anode and a cathode formed on the organic layer.
Abstract:
An organic light emitting diode display device (OLED display device) having uniform electrical characteristics and a method of manufacturing the same. The OLED display device includes: a substrate; a semiconductor layer disposed on the substrate, and including source and drain regions and a channel region formed using metal induced lateral crystallization (MILC); a gate insulating layer for electrically insulating the semiconductor layer; a gate electrode disposed on the gate insulating layer; an interlayer insulating layer for electrically insulating the gate electrode; a thin film transistor (TFT) including source and drain electrodes that are electrically connected to the source and drain regions of the semiconductor layer; a first electrode for a capacitor disposed on a region of the substrate to be spaced apart from the TFT and formed using a metal induced crystallization (MIC); the gate insulating layer for electrically insulating the first capacitor electrode; a second electrode for the capacitor disposed on the gate insulating layer; a planarization layer disposed on the TFT and the capacitor; a first electrode disposed on the planarization layer; a pixel defining layer disposed on the first electrode; an organic layer disposed on the first electrode and the pixel defining layer, and including at least an emission layer; and a second electrode disposed on the organic layer.
Abstract:
The present invention discloses a method of manufacturing an active matrix display device, comprising: a) forming a semiconductor layer on an insulating substrate; b) forming a gate insulating layer over the whole surface of the substrate while convering the semiconductor layer; c) forming a gate electrode on the gate insulating layer over the semiconductor layer; d) forming spacers on both side wall portions of the gate electrode while exposing both end portions of the semiconductor layer; e) ion-implaing a high-density impurity into the semiconductor layer to form high-density source and drain regions in the semiconductor layer; f) depositing sequentially a transparent conductive layer and a metal layer on the inter insulating layer; g) patterning the transparent conductive layer and the metal layer to form the source and drain electrodes, the source and drain electrodes directly contacting the high-density source and drain regions and having a dual-layered structure; h) forming a passivation layer over the whole surface of the substrate; i) etching the passivation layer and the metal layer to form an opening portion exposing a portions of the transparent conductive layer, thereby forming a pixel electrode; and j) performing a reflow process to cover the metal layer in the opening portion by the passivation layer.
Abstract:
An organic light emitting display device in which a failure rate is reduced and thus product yield is improved, and a method of fabricating the same. The organic light emitting display device includes: a substrate; a thin film transistor disposed on the substrate, the thin film transistor including a semiconductor layer, a gate electrode, and source and drain electrodes; a first insulating layer disposed on the thin film transistor; an inorganic planarization layer disposed on the first insulating layer; a second insulating layer disposed on the inorganic planarization layer; a first electrode disposed on the second insulating layer, and electrically connected to the source and drain electrodes; an organic layer disposed on the first electrode, the organic layer including an emissive layer; and a second electrode disposed on the organic layer.
Abstract:
An organic light emitting display device and a method of fabricating the same are provided. A trench is formed in a planarization layer, and then a first electrode is formed to have opposite ends in the trench, thereby reducing a height difference between the planarization layer and the first electrode. That is, the thickness of a pixel defining layer formed on the first electrode may be reduced by reducing or minimizing protrusion of the first electrode with respect to the planarization layer. Thus, transfer efficiency can be increased when an organic layer is formed by a laser induced thermal imaging method, and reliability of a device can be improved by reducing or preventing thermal damage of the organic layer and open defects.
Abstract:
A method of manufacturing a thin film transistor includes forming a semiconductor layer on a substrate; forming a gate insulating layer over the entire surface of the substrate to cover the semiconductor layer; depositing a conductive layer on the gate insulating layer; forming a first photosensitive pattern over the conductive layer; patterning the conductive layer according to the photosensitive pattern to form a gate electrode; and ion-doping an impurity into the semiconductor layer using the photosensitive pattern as a mask to form source and drain regions.