Organic light emitting diode display device and method of fabricating the same
    1.
    发明申请
    Organic light emitting diode display device and method of fabricating the same 有权
    有机发光二极管显示装置及其制造方法

    公开(公告)号:US20080284326A1

    公开(公告)日:2008-11-20

    申请号:US12152601

    申请日:2008-05-14

    CPC classification number: H01L27/3248 H01L51/5212 H01L51/5218 H01L2251/5315

    Abstract: Provided is an organic light emitting diode (OLED) display device, including: a substrate; a semiconductor layer on the substrate; a gate insulating layer on the substrate with the semiconductor layer; a gate electrode on a region of the gate insulating layer corresponding to the semiconductor layer and insulated from the semiconductor layer; source and drain electrodes connected to the semiconductor layer; metal layers on the source and drain electrodes, spaced a distance apart from each other, and including nickel; a passivation layer over the gate insulating layer; a first electrode on the passivation layer, and electrically connected to the metal layers; an organic layer on the first electrode; and a second electrode on the organic layer.

    Abstract translation: 提供了一种有机发光二极管(OLED)显示装置,包括:基板; 衬底上的半导体层; 在具有半导体层的衬底上的栅极绝缘层; 所述栅电极与所述半导体层对应并与所述半导体层绝缘的所述栅极绝缘层的区域上; 源极和漏极连接到半导体层; 源极和漏极上的金属层,彼此隔开一段距离,并包括镍; 栅绝缘层上的钝化层; 钝化层上的第一电极,并电连接到金属层; 第一电极上的有机层; 和有机层上的第二电极。

    Organic light emitting diode display device and method of fabricating the same
    2.
    发明授权
    Organic light emitting diode display device and method of fabricating the same 有权
    有机发光二极管显示装置及其制造方法

    公开(公告)号:US07994706B2

    公开(公告)日:2011-08-09

    申请号:US12152601

    申请日:2008-05-14

    CPC classification number: H01L27/3248 H01L51/5212 H01L51/5218 H01L2251/5315

    Abstract: Provided is an organic light emitting diode (OLED) display device, including: a substrate; a semiconductor layer on the substrate; a gate insulating layer on the substrate with the semiconductor layer; a gate electrode on a region of the gate insulating layer corresponding to the semiconductor layer and insulated from the semiconductor layer; source and drain electrodes connected to the semiconductor layer; metal layers on the source and drain electrodes, spaced a distance apart from each other, and including nickel; a passivation layer over the gate insulating layer; a first electrode on the passivation layer, and electrically connected to the metal layers; an organic layer on the first electrode; and a second electrode on the organic layer.

    Abstract translation: 提供了一种有机发光二极管(OLED)显示装置,包括:基板; 衬底上的半导体层; 在具有半导体层的衬底上的栅极绝缘层; 所述栅电极与所述半导体层对应并与所述半导体层绝缘的所述栅极绝缘层的区域上; 源极和漏极连接到半导体层; 源极和漏极上的金属层,彼此隔开一段距离,并包括镍; 栅绝缘层上的钝化层; 钝化层上的第一电极,并电连接到金属层; 第一电极上的有机层; 和有机层上的第二电极。

    Organic light emitting display device and method of fabricating the same
    3.
    发明申请
    Organic light emitting display device and method of fabricating the same 审中-公开
    有机发光显示装置及其制造方法

    公开(公告)号:US20080106193A1

    公开(公告)日:2008-05-08

    申请号:US11982470

    申请日:2007-10-31

    CPC classification number: H01L27/3258 H01L27/1248

    Abstract: An organic light emitting display device in which a failure rate is reduced and thus product yield is improved, and a method of fabricating the same. The organic light emitting display device includes: a substrate; a thin film transistor disposed on the substrate, the thin film transistor including a semiconductor layer, a gate electrode, and source and drain electrodes; a first insulating layer disposed on the thin film transistor; an inorganic planarization layer disposed on the first insulating layer; a second insulating layer disposed on the inorganic planarization layer; a first electrode disposed on the second insulating layer, and electrically connected to the source and drain electrodes; an organic layer disposed on the first electrode, the organic layer including an emissive layer; and a second electrode disposed on the organic layer.

    Abstract translation: 一种有机发光显示装置及其制造方法,其中故障率降低,从而提高产品产量。 有机发光显示装置包括:基板; 设置在所述基板上的薄膜晶体管,所述薄膜晶体管包括半导体层,栅电极以及源极和漏极; 设置在所述薄膜晶体管上的第一绝缘层; 设置在所述第一绝缘层上的无机平坦化层; 设置在无机平坦化层上的第二绝缘层; 第一电极,设置在所述第二绝缘层上,并且电连接到所述源极和漏极; 设置在所述第一电极上的有机层,所述有机层包括发光层; 以及设置在有机层上的第二电极。

    ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    有机发光二极管显示装置及其制造方法

    公开(公告)号:US20080111135A1

    公开(公告)日:2008-05-15

    申请号:US11935670

    申请日:2007-11-06

    Abstract: An organic light emitting diode display device (OLED display device) having uniform electrical characteristics and a method of manufacturing the same. The OLED display device includes: a substrate; a semiconductor layer disposed on the substrate, and including source and drain regions and a channel region formed using metal induced lateral crystallization (MILC); a gate insulating layer for electrically insulating the semiconductor layer; a gate electrode disposed on the gate insulating layer; an interlayer insulating layer for electrically insulating the gate electrode; a thin film transistor (TFT) including source and drain electrodes that are electrically connected to the source and drain regions of the semiconductor layer; a first electrode for a capacitor disposed on a region of the substrate to be spaced apart from the TFT and formed using a metal induced crystallization (MIC); the gate insulating layer for electrically insulating the first capacitor electrode; a second electrode for the capacitor disposed on the gate insulating layer; a planarization layer disposed on the TFT and the capacitor; a first electrode disposed on the planarization layer; a pixel defining layer disposed on the first electrode; an organic layer disposed on the first electrode and the pixel defining layer, and including at least an emission layer; and a second electrode disposed on the organic layer.

    Abstract translation: 一种具有均匀电特性的有机发光二极管显示装置(OLED显示装置)及其制造方法。 OLED显示装置包括:基板; 设置在所述衬底上的半导体层,并且包括源区和漏区以及使用金属诱导横向结晶(MILC)形成的沟道区; 用于使所述半导体层电绝缘的栅极绝缘层; 设置在所述栅极绝缘层上的栅电极; 用于使所述栅电极电绝缘的层间绝缘层; 包括电连接到半导体层的源极和漏极区域的源极和漏极的薄膜晶体管(TFT); 用于电容器的第一电极,设置在与TFT间隔开并且使用金属诱导结晶(MIC)形成的基板的区域上; 所述栅极绝缘层用于使所述第一电容器电极电绝缘; 用于设置在栅极绝缘层上的电容器的第二电极; 设置在TFT和电容器上的平坦化层; 设置在所述平坦化层上的第一电极; 设置在所述第一电极上的像素限定层; 设置在所述第一电极和所述像素限定层上的有机层,并且至少包括发光层; 以及设置在有机层上的第二电极。

    Organic light emitting diode display device and method of manufacturing the same
    5.
    发明授权
    Organic light emitting diode display device and method of manufacturing the same 有权
    有机发光二极管显示装置及其制造方法

    公开(公告)号:US08174012B2

    公开(公告)日:2012-05-08

    申请号:US11935670

    申请日:2007-11-06

    Abstract: An organic light emitting diode display device (OLED display device) having uniform electrical characteristics and a method of manufacturing the same. The OLED display device includes: a substrate; a semiconductor layer disposed on the substrate, and including source and drain regions and a channel region formed using metal induced lateral crystallization (MILC); a gate insulating layer for electrically insulating the semiconductor layer; a gate electrode disposed on the gate insulating layer; an interlayer insulating layer for electrically insulating the gate electrode; a thin film transistor (TFT) including source and drain electrodes that are electrically connected to the source and drain regions of the semiconductor layer; a first electrode for a capacitor disposed on a region of the substrate to be spaced apart from the TFT and formed using a metal induced crystallization (MIC); the gate insulating layer for electrically insulating the first capacitor electrode; a second electrode for the capacitor disposed on the gate insulating layer; a planarization layer disposed on the TFT and the capacitor; a first electrode disposed on the planarization layer; a pixel defining layer disposed on the first electrode; an organic layer disposed on the first electrode and the pixel defining layer, and including at least an emission layer; and a second electrode disposed on the organic layer.

    Abstract translation: 一种具有均匀电特性的有机发光二极管显示装置(OLED显示装置)及其制造方法。 OLED显示装置包括:基板; 设置在所述衬底上的半导体层,并且包括源区和漏区以及使用金属诱导横向结晶(MILC)形成的沟道区; 用于使所述半导体层电绝缘的栅极绝缘层; 设置在所述栅极绝缘层上的栅电极; 用于使所述栅电极电绝缘的层间绝缘层; 包括电连接到半导体层的源极和漏极区域的源极和漏极的薄膜晶体管(TFT); 用于电容器的第一电极,设置在与TFT间隔开并且使用金属诱导结晶(MIC)形成的基板的区域上; 所述栅极绝缘层用于使所述第一电容器电极电绝缘; 用于设置在栅极绝缘层上的电容器的第二电极; 设置在TFT和电容器上的平坦化层; 设置在所述平坦化层上的第一电极; 设置在所述第一电极上的像素限定层; 设置在所述第一电极和所述像素限定层上的有机层,并且至少包括发光层; 以及设置在有机层上的第二电极。

    Thin film transistor panel, method of fabricating the same, and organic light emitting display device including the same
    6.
    发明申请
    Thin film transistor panel, method of fabricating the same, and organic light emitting display device including the same 有权
    薄膜晶体管面板及其制造方法以及包括该薄膜晶体管面板的有机发光显示装置

    公开(公告)号:US20070238227A1

    公开(公告)日:2007-10-11

    申请号:US11783097

    申请日:2007-04-05

    CPC classification number: H01L27/1255

    Abstract: Provided are a thin film transistor (TFT) panel, a method of fabricating the same, and an organic light emitting display device (OLED) including the same. The TFT panel has a TFT region and a capacitor region. A TFT is formed in the TFT region and a capacitor is formed in the capacitor region. The TFT includes an active layer that includes a source and a drain regions. A gate insulation layer is formed on the active layer, and a gate electrode is formed on the gate insulation layer over the active layer. A source and a drain electrodes are formed over the active layer, and connected to the source and drain regions, respectively. In the TFT region, an interlayer insulation layer is formed between the gate electrode and the source/drain electrodes. In the capacitor region, an interlayer insulation layer is formed between a capacitor lower electrode and a capacitor upper electrode to form a capacitor. The interlayer insulation layers of the TFT region and the capacitor region have different layer structures and have different dielectric constants. Therefore, the capacitor region can have higher capacitance while the TFT region can have lower capacitance to reduce parasitic capacitance.

    Abstract translation: 提供了一种薄膜晶体管(TFT)面板,其制造方法和包括该薄膜晶体管的有机发光显示装置(OLED)。 TFT面板具有TFT区域和电容器区域。 在TFT区域中形成TFT,在电容器区域形成电容器。 TFT包括有源层,其包括源区和漏区。 在有源层上形成栅极绝缘层,并且在有源层上的栅极绝缘层上形成栅电极。 源极和漏极形成在有源层上方,分别连接到源极和漏极区。 在TFT区域中,在栅极电极和源极/漏极之间形成层间绝缘层。 在电容器区域中,在电容器下电极和电容器上电极之间形成层间绝缘层,形成电容器。 TFT区域和电容器区域的层间绝缘层具有不同的层结构并具有不同的介电常数。 因此,电容器区域可以具有更高的电容,而TFT区域可以具有较低的电容以减小寄生电容。

    Thin film transistor panel, method of fabricating the same, and organic light emitting display device including the same
    7.
    发明授权
    Thin film transistor panel, method of fabricating the same, and organic light emitting display device including the same 有权
    薄膜晶体管面板及其制造方法以及包括该薄膜晶体管面板的有机发光显示装置

    公开(公告)号:US08053779B2

    公开(公告)日:2011-11-08

    申请号:US11783097

    申请日:2007-04-05

    CPC classification number: H01L27/1255

    Abstract: Provided are a thin film transistor (TFT) panel, a method of fabricating the same, and an organic light emitting display device (OLED) including the same. The TFT panel has a TFT region and a capacitor region. A TFT is formed in the TFT region and a capacitor is formed in the capacitor region. The TFT includes an active layer that includes a source and a drain regions. A gate insulation layer is formed on the active layer, and a gate electrode is formed on the gate insulation layer over the active layer. A source and a drain electrodes are formed over the active layer, and connected to the source and drain regions, respectively. In the TFT region, an interlayer insulation layer is formed between the gate electrode and the source/drain electrodes. In the capacitor region, an interlayer insulation layer is formed between a capacitor lower electrode and a capacitor upper electrode to form a capacitor. The interlayer insulation layers of the TFT region and the capacitor region have different layer structures and have different dielectric constants. Therefore, the capacitor region can have higher capacitance while the TFT region can have lower capacitance to reduce parasitic capacitance.

    Abstract translation: 提供了一种薄膜晶体管(TFT)面板,其制造方法和包括该薄膜晶体管的有机发光显示装置(OLED)。 TFT面板具有TFT区域和电容器区域。 在TFT区域中形成TFT,在电容器区域形成电容器。 TFT包括有源层,其包括源区和漏区。 在有源层上形成栅极绝缘层,并且在有源层上的栅极绝缘层上形成栅电极。 源极和漏极形成在有源层上方,分别连接到源极和漏极区。 在TFT区域中,在栅极电极和源极/漏极之间形成层间绝缘层。 在电容器区域中,在电容器下电极和电容器上电极之间形成层间绝缘层,形成电容器。 TFT区域和电容器区域的层间绝缘层具有不同的层结构并具有不同的介电常数。 因此,电容器区域可以具有更高的电容,而TFT区域可以具有较低的电容以减小寄生电容。

    ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME
    8.
    发明申请
    ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME 有权
    有机发光显示装置及其制造方法

    公开(公告)号:US20070257253A1

    公开(公告)日:2007-11-08

    申请号:US11691473

    申请日:2007-03-26

    CPC classification number: H01L27/3258 H01L27/3246 H01L51/5203

    Abstract: An organic light emitting display device and a method of fabricating the same are provided. A trench is formed in a planarization layer, and then a first electrode is formed to have opposite ends in the trench, thereby reducing a height difference between the planarization layer and the first electrode. That is, the thickness of a pixel defining layer formed on the first electrode may be reduced by reducing or minimizing protrusion of the first electrode with respect to the planarization layer. Thus, transfer efficiency can be increased when an organic layer is formed by a laser induced thermal imaging method, and reliability of a device can be improved by reducing or preventing thermal damage of the organic layer and open defects.

    Abstract translation: 提供了一种有机发光显示装置及其制造方法。 在平坦化层中形成沟槽,然后在沟槽中形成具有相对端的第一电极,从而减小了平坦化层与第一电极之间的高度差。 也就是说,可以通过减小或最小化第一电极相对于平坦化层的突出来减小形成在第一电极上的像素限定层的厚度。 因此,当通过激光诱导热成像方法形成有机层时,可以提高转印效率,并且可以通过减少或防止有机层的热损伤和开放缺陷来提高器件的可靠性。

    Organic light emitting display device and method of fabricating the same
    9.
    发明授权
    Organic light emitting display device and method of fabricating the same 有权
    有机发光显示装置及其制造方法

    公开(公告)号:US08076837B2

    公开(公告)日:2011-12-13

    申请号:US11517277

    申请日:2006-09-08

    CPC classification number: H01L51/5203 H01L27/3246 H01L27/3258

    Abstract: An organic light emitting display device (OLED) and a method of fabricating the same. The OLED includes: a substrate; a thin film transistor on the substrate and including a source electrode and a drain electrode; a first insulating layer on the substrate having the source and drain electrodes; a second insulating layer on the first insulating layer and including a trench; a via hole formed in the trench over the first and second insulating layers and exposing a portion of the source electrode or the drain electrode; a first electrode in the trench and connected to one of the source electrode and the drain electrode through the via hole; a pixel defining layer on the first electrode and having an opening exposing the first electrode; an organic layer in the opening and having at least an organic emission layer; and a second electrode on an entire surface of the substrate having the organic layer.

    Abstract translation: 一种有机发光显示装置(OLED)及其制造方法。 OLED包括:基底; 薄膜晶体管,其包括源电极和漏电极; 在所述衬底上的具有所述源极和漏极的第一绝缘层; 在所述第一绝缘层上的第二绝缘层,并且包括沟槽; 通孔,形成在所述沟槽中,在所述第一绝缘层和所述第二绝缘层上并暴露所述源电极或所述漏电极的一部分; 沟槽中的第一电极,并通过通孔与源电极和漏极之一连接; 第一电极上的像素限定层,并具有暴露第一电极的开口; 所述开口中的有机层至少具有有机发光层; 以及在具有有机层的基板的整个表面上的第二电极。

    Novel conductive elements for thin film transistors used in a flat panel display
    10.
    发明申请
    Novel conductive elements for thin film transistors used in a flat panel display 审中-公开
    用于平板显示器的薄膜晶体管的新型导电元件

    公开(公告)号:US20060011914A1

    公开(公告)日:2006-01-19

    申请号:US11218496

    申请日:2005-09-06

    Abstract: A novel design for an electrode for a thin film transistor. The novel design allows for formation of a normal conductive channel between a source electrode and a drain electrode even after a heat treatment process, and a flat panel display including the thin film transistor. The thin film transistor includes a source electrode, a drain electrode, a gate electrode, and a semiconductor layer, wherein at least one of the source electrode, the drain electrode, and the gate electrode includes an aluminum alloy layer, and titanium layers are formed on both surfaces of the aluminum alloy layer. The electrodes are preferably absent any pure aluminum as pure aluminum can diffuse into the semiconductor layer causing a defect region and preventing a conductive channel from forming in the thin film transistor.

    Abstract translation: 一种用于薄膜晶体管的电极的新颖设计。 该新型设计允许即使在热处理工艺之后也可在源极和漏极之间形成正常的导电通道,以及包括薄膜晶体管的平板显示器。 薄膜晶体管包括源电极,漏电极,栅电极和半导体层,其中源电极,漏电极和栅电极中的至少一个包括铝合金层,并且形成钛层 在铝合金层的两个表面上。 电极优选不存在任何纯铝,因为纯铝可以扩散到半导体层中,导致缺陷区域并且防止在薄膜晶体管中形成导电沟道。

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