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公开(公告)号：US09613863B2
公开(公告)日：2017-04-04
申请号：US15040148
申请日：2016-02-10
发明人： Thorbjorn Ebefors , Henrik Knutsson
IPC分类号： H01L21/44 , H01L21/768 , H01L21/288 , H01L23/48 , H01L21/02
CPC分类号： H01L21/76897 , H01L21/0217 , H01L21/02381 , H01L21/02532 , H01L21/02595 , H01L21/288 , H01L21/76847 , H01L21/76874 , H01L21/76879 , H01L21/76888 , H01L21/76892 , H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00
摘要： A method of making a substrate-through metal via having a high aspect ratio, in a semiconductor substrate, and a metal pattern on the substrate surface, includes providing a semiconductor substrate (wafer) and depositing poly-silicon on the substrate. The poly-silicon on the substrate surface is patterned by etching away unwanted portions. Then, Ni is selectively deposited on the poly-silicon by an electroless process. A via hole is made through the substrate, wherein the walls in the hole is subjected to the same processing as above. Cu is deposited on the Ni by a plating process. Line widths and spacings
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公开(公告)号：US20160122180A1
公开(公告)日：2016-05-05
申请号：US14993714
申请日：2016-01-12
发明人： Thorbjom Ebefors , Edvard Kalvesten , Tomas Bauer
IPC分类号： B81B7/00 , H01L23/498 , H01L23/66 , H01L23/04 , H01L23/64
CPC分类号： H01L21/50 , B81B7/007 , B81B2207/095 , B81C1/00301 , H01L21/6835 , H01L21/76898 , H01L21/78 , H01L23/04 , H01L23/10 , H01L23/481 , H01L23/49827 , H01L23/49838 , H01L23/552 , H01L23/585 , H01L23/642 , H01L23/645 , H01L23/66 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/33 , H01L24/81 , H01L24/83 , H01L2221/68363 , H01L2221/68372 , H01L2223/6616 , H01L2223/6622 , H01L2223/6655 , H01L2223/6677 , H01L2224/02311 , H01L2224/02313 , H01L2224/02371 , H01L2224/02372 , H01L2224/0239 , H01L2224/03462 , H01L2224/0401 , H01L2224/05073 , H01L2224/05155 , H01L2224/05548 , H01L2224/05573 , H01L2224/05644 , H01L2224/1146 , H01L2224/13009 , H01L2224/13024 , H01L2224/13083 , H01L2224/131 , H01L2224/13111 , H01L2224/13144 , H01L2224/13155 , H01L2224/29009 , H01L2224/29011 , H01L2224/29012 , H01L2224/29018 , H01L2224/29101 , H01L2224/29111 , H01L2224/29144 , H01L2224/30051 , H01L2224/3012 , H01L2224/81005 , H01L2224/81203 , H01L2224/81801 , H01L2224/83005 , H01L2224/83203 , H01L2224/83801 , H01L2224/83805 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01051 , H01L2924/01072 , H01L2924/01079 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/1461 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2924/01027 , H01L2924/01028 , H01L2924/3512
摘要： A wafer level method of making a micro-electronic and/or micro-mechanic device, having a capping with electrical wafer through connections (vias), comprising the steps of providing a first wafer of a semiconductor material having a first and a second side and a plurality of holes and/or recesses in the first side, and a barrier structure extending over the wafer on the second side, said barrier comprising an inner layer an insulating material, such as oxide, and an outer layer of another material. Then, metal is applied in said holes so as to cover the walls in the holes and the bottom of the holes. The barrier structure is removed and contacts are provided to the wafer through connections on the back-side of the wafer. Bonding structures are provided on either of said first side or the second side of the wafer. The wafer is bonded to another wafer carrying electronic and micro-electronic/mechanic components, such that the first wafer forms a capping structure covering the second wafer. Finally the wafer is singulated to individual devices.
摘要翻译： 一种制造微电子和/或微机械装置的晶片级方法，其具有通过连接（通孔）的电晶片的封盖，包括以下步骤：提供具有第一和第二侧面的半导体材料的第一晶片，以及 第一侧中的多个孔和/或凹部，以及在第二侧上延伸到晶片上方的阻挡结构，所述屏障包括绝缘材料（例如氧化物）和另一材料的外层的内层。 然后，将金属施加在所述孔中，以覆盖孔中的壁和孔的底部。 去除阻挡结构，并且通过晶片背面上的连接将接触提供给晶片。 粘合结构设置在晶片的所述第一侧或第二侧中的任一个上。 晶片被接合到另一个承载电子和微电子/机械部件的晶片，使得第一晶片形成覆盖第二晶片的封盖结构。 最后，将晶片单个化为单个器件。
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公开(公告)号：US20150076677A1
公开(公告)日：2015-03-19
申请号：US14391855
申请日：2013-04-15
发明人： Thorbjorn Ebefors , Daniel Perttu
IPC分类号： H01L23/498 , H01L23/31 , H01L21/48
CPC分类号： H01L23/49838 , H01L21/486 , H01L23/147 , H01L23/3142 , H01L23/49811 , H01L23/49816 , H01L23/49827 , H01L2224/16 , H01L2924/1461 , H01L2924/00
摘要： The present interposer makes it possible to tailor the coefficient of thermal expansion of the interposer to match components to be attached thereto within very wide ranges. The semiconductor interposer, includes a substrate of a semiconductor material having a first side and an opposite second side. There is at least one conductive wafer-through via including metal. At least one recess is provided in the first side of the substrate and in the semiconductor material of the substrate, the recess being filled with metal and connected with the wafer-through via providing a routing structure. The exposed surfaces of the metal-filled via and metal-filled recess are essentially flush with the substrate surface on the first side of the substrate. The wafer-through via includes a narrow part and a wider part, and contact elements are provided on the routing structure having an aspect ratio, height:diameter,
摘要翻译： 本插入器使得可以在非常宽的范围内调整插入件的热膨胀系数以使其附着的部件相匹配。 半导体插入器包括具有第一侧和相对的第二侧的半导体材料的衬底。 至少有一个导电晶圆通孔包括金属。 至少一个凹部设置在衬底的第一侧中，并且在衬底的半导体材料中，凹槽填充有金属并与晶片通孔连接，从而提供布线结构。 金属填充的通孔和金属填充的凹部的暴露表面基本上与衬底的第一侧上的衬底表面齐平。 晶圆通孔包括窄部分和较宽部分，并且接触元件设置在具有纵横比，高度：直径，<1：1，优选1：1至2：1的布线结构上。
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公开(公告)号：US20150054136A1
公开(公告)日：2015-02-26
申请号：US14389592
申请日：2013-03-28
发明人： Thorbjorn Ebefors , Daniel Perttu
IPC分类号： H01L21/768 , H01L23/522
CPC分类号： H01L21/76831 , H01L21/2885 , H01L21/76807 , H01L21/7684 , H01L21/76871 , H01L21/76879 , H01L21/76898 , H01L23/147 , H01L23/481 , H01L23/49811 , H01L23/49827 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： A method of providing a via hole and routing structure includes: providing a substrate wafer having recesses and blind holes provided in the surface of the wafer; providing an insulating layer in the recesses and holes; metallizing the holes and recesses; and removing the oxide layer in the bottom of the holes to provide contact between the back side and the front side of the wafer. A semiconductor device, including a substrate having at least one metallized via extending through the substrate and at least one metallized recess forming a routing together with the via. There is an oxide layer on the front side field and on the back side field. The metal in the recess and the via is flush with the oxide on the field on at least the front side, whereby a flat front side is provided. The thickness of the semiconductor device is
摘要翻译： 提供通孔和布线结构的方法包括：提供具有设置在晶片表面上的凹陷和盲孔的衬底晶片; 在凹槽和孔中提供绝缘层; 对孔和凹槽进行金属化; 并且去除孔的底部中的氧化物层以提供晶片的背侧和前侧之间的接触。 一种半导体器件，包括具有延伸穿过衬底的至少一个金属化通孔的衬底和形成与通孔一起布线的至少一个金属化凹槽。 前侧场和后侧场均有氧化层。 凹槽和通孔中的金属至少在前侧与场上的氧化物齐平，由此提供平坦的前侧。 半导体器件的厚度<300μm。
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公开(公告)号：US09511999B2
公开(公告)日：2016-12-06
申请号：US14365235
申请日：2012-12-17
发明人： Thorbjorn Ebefors , Niklas Svedin
CPC分类号： B81C1/00285 , B81B7/0038 , B81C1/00293 , B81C2203/0136 , B81C2203/0145
摘要： A method for sealing cavities in micro-electronic/-mechanical system (MEMS) devices to provide a controlled atmosphere within the sealed cavity includes providing a semiconductor substrate on which a template is provided on a localized area of the substrate. The template defines the interior shape of the cavity. Holes are made so as to enable venting of the cavity to provide a desired atmosphere to enter into the cavity through the hole. Finally, a sealing material is provided in the hole to seal the cavity. The sealing can be made by compression and/or melting of the sealing material.
摘要翻译： 一种用于在微电子/机械系统（MEMS）装置中密封空腔以在密封空腔内提供受控气氛的方法包括提供其上在基板的局部区域上提供模板的半导体衬底。 模板定义了腔的内部形状。 孔被制成以便能够排出空腔以提供期望的气氛以通过孔进入空腔。 最后，在孔中设置密封材料以密封空腔。 密封可以通过密封材料的压缩和/或熔化来制造。
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公开(公告)号：US09507142B2
公开(公告)日：2016-11-29
申请号：US14410211
申请日：2013-06-12
发明人： Peter Agren
CPC分类号： G02B26/0841 , B81B3/0021 , B81B3/0045 , B81B2201/02 , B81B2201/03 , B81B2203/04 , B81C1/00357 , B81C1/00619 , G01D5/24 , G02B26/085 , H01L23/481 , H01L23/5225 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device, includes a semiconductor substrate (10) having a first (12a) and a second (12b) side. There is provided at least one via (15) extending through the substrate (10) having first (16a) and second (16b) end surfaces, the first end surface (16a) constituting a transducer electrode for interacting with a movable element (14) arranged at the first side (12a) of the substrate (10). A shield (17) is provided on and covers at least part of the first side (12a) of the substrate (10), the shield/mask (17) including a conductive layer (19a) and an insulating material layer (19b) provided between the substrate (10) and the conductive layer (19a). The mask has an opening (18) exposing only a part of the first surface (16a) of the via. Preferably the opening (18) in the mask is precisely aligned with the movable element, and the area of the opening is accurately defined.
摘要翻译： 半导体器件包括具有第一（12a）和第二（12b）侧的半导体衬底（10）。 提供至少一个通过具有第一（16a）和第二（16b）端面的基板延伸的通孔（15），第一端面（16a）构成用于与可移动元件（14）相互作用的换能器电极， 布置在基板（10）的第一侧（12a）处。 在衬底（10）的第一侧（12a）的至少一部分上设置有屏蔽（17），所述屏蔽/掩模（17）包括导电层（19a）和绝缘材料层（19b） 在所述基板（10）和所述导电层（19a）之间。 掩模具有仅露出通孔的第一表面（16a）的一部分的开口（18）。 优选地，掩模中的开口（18）与可移动元件精确对准，并且开口的区域被精确地限定。
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7.发明申请公开(公告)号：US20160035662A1
公开(公告)日：2016-02-04
申请号：US14881868
申请日：2015-10-13
发明人： Thorbjörn EBEFORS , Daniel PERTTU
IPC分类号： H01L23/498 , H01L21/308 , H01L21/48 , H01L21/306
CPC分类号： H01L23/49827 , H01L21/30625 , H01L21/308 , H01L21/486 , H01L21/76879 , H01L21/76898 , H01L23/147 , H01L23/481 , H01L23/49816 , H01L23/49822 , H01L23/49838 , H01L23/49866 , H01L23/5226 , H01L23/525 , H01L2224/02372 , H01L2224/0401 , H01L2224/05 , H01L2224/0557 , H01L2224/06181 , H01L2224/13 , H01L2224/13023 , H01L2924/00013 , H01L2924/00014 , H01L2924/1461 , H01L2224/13099 , H01L2224/05099 , H01L2224/05599 , H01L2924/00 , H01L2224/05552
摘要： The invention relates to a semiconductor structure, comprising a substrate of a semiconductor material having a first side (FS) and an opposite second side (BS). There is at least one conductive wafer-through via (V) comprising metal, and at least one recess (RDL) provided in the first side of the substrate and in the semiconductor material of the substrate. The recess is filled with metal and seamlessly connected with the wafer-through via. The exposed surfaces of the metal filled via and the metal filled recess are essentially flush with the substrate surface on the first side of the substrate. There is also provide an interposer comprising the above structure, further comprising contacts for attaching circuit boards and integrated circuits on opposite sides of the interposer. A method of making the structure is also provided.
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公开(公告)号：US20140063580A1
公开(公告)日：2014-03-06
申请号：US14073307
申请日：2013-11-06
IPC分类号： G02B26/08
CPC分类号： G02B26/0833 , B81B7/0006 , B81B7/007 , B81B2207/092 , B81B2207/095 , G02B6/3518 , G02B6/3584 , G02B26/0841 , H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00012 , H01L2924/00
摘要： A layered micro-electronic and/or micro-mechanic structure comprises at least three alternating electrically conductive layers with insulating layers between the conductive layers. There is also provided a via in a first outer layer, said via comprising an insulated conductive connection made of wafer native material through the layer, an electrically conductive plug extending through the other layers and into said via in the first outer layer in order to provide conductivity through the layers, and an insulating enclosure surrounding said conductive plug in at least one selected layer of said other layers for insulating said plug from the material in said selected layer. It also relates to micro-electronic and/or micro- mechanic device comprising a movable member provided above a cavity such that it is movable in at least one direction. The device has a layered structure according to the invention. Methods of making such a layered MEMS structure is also provided.
摘要翻译： 分层微电子和/或微机械结构包括在导电层之间具有绝缘层的至少三个交替导电层。 还提供了在第一外层中的通孔，所述通孔包括由穿过该层的晶片天然材料制成的绝缘导电连接，在第一外层中延伸穿过其它层并进入所述通孔的导电插塞，以便提供 通过层的导电性，以及围绕所述其它层的至少一个所选层的所述导电插塞的绝缘外壳，用于使所述插塞与所述选定层中的材料绝缘。 它还涉及微电子和/或微机械装置，其包括设置在空腔上方的可动构件，使得其可在至少一个方向上移动。 该装置具有根据本发明的分层结构。 还提供了制造这种分层MEMS结构的方法。
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公开(公告)号：US09718674B2
公开(公告)日：2017-08-01
申请号：US14914015
申请日：2014-08-26
CPC分类号： B81B7/007 , B81B2201/01 , B81B2201/0264 , B81B2201/0271 , B81B2203/0118 , B81B2203/0127 , B81B2207/095 , B81C1/00301 , B81C2201/0153 , B81C2201/036 , B81C2203/0109 , B81C2203/0145 , H01L21/50 , H01L23/08 , H01L24/94 , H01L2924/16235
摘要： A device includes a base substrate (700) with a micro component (702) attached thereto. Suitably it is provided with routing elements (704) for conducting signals to and from the component (702). It also includes spacer members (706) which also can act as conducting structures for routing signals vertically. There is a capping structure (708) of a glass material, provided above the base substrate (700), bonded via the spacer members (706), preferably by eutectic bonding, wherein the capping structure (708) includes vias (710) including metal for providing electrical connection through the capping structure. The vias can be made by a stamping/pressing method entailing pressing needles under heating to soften the glass and applying pressure, to a predetermined depth in the glass. However, other methods are possible, e-g- drilling, etching, blasting.
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公开(公告)号：US09620390B2
公开(公告)日：2017-04-11
申请号：US14993714
申请日：2016-01-12
发明人： Thorbjorn Ebefors , Edvard Kalvesten , Tomas Bauer
IPC分类号： B81B7/00 , H01L23/04 , H01L23/498 , H01L23/64 , H01L23/66 , H01L21/50 , H01L21/683 , H01L23/552 , H01L23/58 , H01L21/78 , H01L21/768 , H01L23/10 , H01L23/48 , H01L23/00
CPC分类号： H01L21/50 , B81B7/007 , B81B2207/095 , B81C1/00301 , H01L21/6835 , H01L21/76898 , H01L21/78 , H01L23/04 , H01L23/10 , H01L23/481 , H01L23/49827 , H01L23/49838 , H01L23/552 , H01L23/585 , H01L23/642 , H01L23/645 , H01L23/66 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/27 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/33 , H01L24/81 , H01L24/83 , H01L2221/68363 , H01L2221/68372 , H01L2223/6616 , H01L2223/6622 , H01L2223/6655 , H01L2223/6677 , H01L2224/02311 , H01L2224/02313 , H01L2224/02371 , H01L2224/02372 , H01L2224/0239 , H01L2224/03462 , H01L2224/0401 , H01L2224/05073 , H01L2224/05155 , H01L2224/05548 , H01L2224/05573 , H01L2224/05644 , H01L2224/1146 , H01L2224/13009 , H01L2224/13024 , H01L2224/13083 , H01L2224/131 , H01L2224/13111 , H01L2224/13144 , H01L2224/13155 , H01L2224/29009 , H01L2224/29011 , H01L2224/29012 , H01L2224/29018 , H01L2224/29101 , H01L2224/29111 , H01L2224/29144 , H01L2224/30051 , H01L2224/3012 , H01L2224/81005 , H01L2224/81203 , H01L2224/81801 , H01L2224/83005 , H01L2224/83203 , H01L2224/83801 , H01L2224/83805 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01051 , H01L2924/01072 , H01L2924/01079 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/1461 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2924/01027 , H01L2924/01028 , H01L2924/3512
摘要： A wafer level method of making a micro-electronic and/or micro-mechanic device, having a capping with electrical wafer through connections (vias), comprising the steps of providing a first wafer of a semiconductor material having a first and a second side and a plurality of holes and/or recesses in the first side, and a barrier structure extending over the wafer on the second side, said barrier comprising an inner layer an insulating material, such as oxide, and an outer layer of another material. Then, metal is applied in said holes so as to cover the walls in the holes and the bottom of the holes. The barrier structure is removed and contacts are provided to the wafer through connections on the back-side of the wafer. Bonding structures are provided on either of said first side or the second side of the wafer. The wafer is bonded to another wafer carrying electronic and micro-electronic/mechanic components, such that the first wafer forms a capping structure covering the second wafer. Finally the wafer is singulated to individual devices.
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