摘要:
[Problems] To provide an electrode that is stable in liquid and is capable of processing a large volume of liquid and a small electrode that is capable of processing a large volume of liquid at high speed; provide a liquid processor and method of processing liquid in which the electrode is used; provide and electrode material being hard to be damaged by thermal stress; and provide an electrode, liquid processor and method of processing liquid in which the electrode material is used.[Means for solving problems] An electrode of configuration resulting from coating solid pieces of 5 to 60 mm size with electrically conductive diamond, supporting them on supports and bringing the same into contact with each other so as to realize current passage as a whole is used in various electrochemical process. Also, an electrode including (1) electrically conductive substrate, (2) covering layer covering the electrically conductive substrate and (3) electrically conductive diamond particles fixed on the covering layer, wherein each of the electrically conductive diamond particles is partially brought into contact with the electrically conductive substrate and another portion thereof is partially exposed on the surface of the covering layer. Further, an electrode material, wherein an entire side surface of columnar or tubular substrate is coated with electrically conductive diamond is used.
摘要:
Embedded interconnections of copper are formed by forming an insulating layer, forming embedded interconnections of copper in the insulating layer, making an exposed upper surface of the insulating layer and an exposed surface of the embedded interconnections of copper coplanar according to chemical mechanical polishing, and forming a protective silver film on the exposed surface of the embedded interconnections of copper. These steps are repeated on the existing insulating layer thereby to produce multiple layers of embedded interconnections of copper. The exposed surface of the embedded interconnections of copper is plated with silver according to immersion plating.
摘要:
A liquid material such as molten silicon is stored in a crucible. A liquid material, which is identical to and held in the same conditions as the liquid material in the crucible, is continuously supplied from an auxiliary crucible to the crucible to keep constant the surface level of the liquid material in the crucible. The liquid material is continuously pulled up from the crucible at a predetermined speed while the liquid material is being solidified into a solid material such as a ribbon-like thin web of single-crystal silicon.
摘要:
The improved method comprises contacting a substrate 5 at least once by a liquid containing the elements that compose a pure metal or an alloy with which the small holes or recesses 3a in the substrate 5 are to be filled or covered, whereby the liquid wets the inner surfaces of said small holes or recesses 3a while, at the same time, said pure metal or said alloy is deposited on the surface of said substrate 5. The method is capable of filling small holes or covering small recesses in the surface of the substrate 5 with improved efficiency while, at the same time, it improves the heat resistance and materials stability of the part that contains the formed filling or covering layer.
摘要:
In a semiconductor device and a method for manufacturing the same according to the present invention, for example, an insulating film is deposited on a silicon substrate, and a concave groove is formed in the insulating film in accordance with a predetermined wiring pattern. Titanium and palladium are deposited in sequence on the insulating film to form a titanium film and a palladium film, respectively. A silver film is formed on the palladium film by electroplating, and a groove-shaped silver wiring layer is formed by polishing. The resultant structure is annealed at a temperature of about 700.degree. C., and an intermetallic compound is formed by alloying the titanium film and palladium film with each other. Consequently, a burying type wiring layer whose resistance is lower than that of aluminum, is constituted by the silver wiring layer and intermetallic compound.
摘要:
A bonding apparatus can bond contacts of electronic components directly to each other without the need for solder. The bonding apparatus include a hermetically sealed processing chamber, a plurality of bases for holding at least two workpieces having respective bonding regions in the processing chamber, a gas inlet for introducing a processing gas to clean the bonding regions into the processing chamber, a pressure controller for controlling a predetermined pressure to be developed in the processing chamber, a heater for heating the workpieces in the processing chamber, and a bonding unit for pressing and bonding the bonding regions of the workpieces to each other in the processing chamber.
摘要:
There is provided a method of performing a surface treatment, such as coating, denaturation, modification and etching, on a surface of a substrate. The method comprises the steps of bringing a surface treatment gas into contact with a surface of a substrate, and irradiating the surface of the substrate with a fast particle beam to enhance an activity of the surface and/or the surface treatment gas, thereby facilitating a reaction between the surface and the gas. The fast particle beam may be selected from a group consisting of an electron beam, a charged particle beam, an atomic beam and molecular beam. For example, during a coating operation, chemical deposition of predetermined component elements of the gas onto the surface is effected and a predetermined portion of the surface of the substrate is irradiated with a particle beam to form a coating layer on the predetermined portion.
摘要:
The present invention is to provide a sliding member and a process for producing the same, which produce a high-quality soft metal layer uniformly coated on a sliding surface by a process alternative to electroplating or ion plating. The metal layer has been formed by ultra-fine metal (silver) particles dissolved in a solvent, which is coated on a sliding surface of the sliding member and dried and fired such that ultra-fine metal particles are melt and bonded to one another. The average particle diameter of the ultra-fine metal (silver) particles is 1 to 20 nm, and in particular 1 to 10 nm. The whole metal coating process can be carried out in the air at room temperature to about 200-300° C.
摘要:
A improved dresser for dressing a polishing surface, easily be manufactured such that an object to be polished is not scratched when the object is polished. The dresser can dress the polishing surface of a polishing apparatus to effect surface correction and to correct a time-lapse change due to a polishing operation, a number of spired projections are formed on a surface of a metallic substrate and a wear-resistant hard film is formed on at least a portion of the surface of the metallic substrate on which the projections are formed.
摘要:
A method and apparatus plate a substrate to form wiring by efficiently filling a fine recess formed in a semiconductor substrate with plating metal without a void or contamination. The plating of the substrate to fill a wiring recess formed in the semiconductor substrate with plating metal includes performing an electroless plating process of forming an initial layer on the substrate, and performing an electrolytic plating process of filling the wiring recess with the plating metal, while the initial layer serves as a feeding layer.