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公开(公告)号：US08421048B2
公开(公告)日：2013-04-16
申请号：US12501689
申请日：2009-07-13
Applicant: Venugopalan Vaithyanathan , Markus Jan Peter Siegert , Wei Tian , Muralikrishnan Balakrishnan , Insik Jin
Inventor： Venugopalan Vaithyanathan , Markus Jan Peter Siegert , Wei Tian , Muralikrishnan Balakrishnan , Insik Jin
CPC classification number: G11C13/02 , G11C13/0007 , G11C2213/31 , G11C2213/34 , G11C2213/54 , G11C2213/55 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/142 , H01L45/144 , H01L45/146
Abstract: An example memory cell may have at least a tunneling region disposed between a conducting region and a metal region, wherein the tunneling region can have at least an active interface region disposed between a first tunneling barrier and a second tunneling barrier. A high resistive film is formed in the active interface region with migration of ions from both the metal and conducting regions responsive to a write current to program the memory cell to a selected resistive state.
Abstract translation: 示例性存储单元可以具有布置在导电区域和金属区域之间的至少一个隧道区域，其中隧道区域可以具有至少一个设置在第一隧道势垒和第二隧道势垒之间的有源界面区域。 响应于写入电流而在存储单元编程到选定的电阻状态，在界面区域中形成高电阻膜，使离子从金属和导电区域两次迁移。
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2.发明申请公开(公告)号：US20110007550A1
公开(公告)日：2011-01-13
申请号：US12502212
申请日：2009-07-13
Applicant: Markus Jan Peter Siegert , Michael Xuefei Tang , Andrew John Carter , Alan Xuguang Wang
IPC: G11C11/00
CPC classification number: G11C8/08 , G11C5/025 , G11C7/12 , G11C11/1659 , G11C11/1675
Abstract: A data storage device and associated method for providing current magnitude compensation for memory cells in a data storage array. In accordance with some embodiments, unit cells are connected between spaced apart first and second control lines of common length. An equalization circuit is configured to respectively apply a common current magnitude through each of the unit cells by adjusting a voltage applied to the cells in relation to a location of each of the cells along the first and second control lines.
Abstract translation: 一种用于为数据存储阵列中的存储器单元提供电流幅度补偿的数据存储装置和相关方法。 根据一些实施例，单元电池连接在具有公共长度的间隔开的第一和第二控制线之间。 均衡电路被配置为通过相对于沿着第一和第二控制线的每个单元的位置调整施加到单元的电压，分别对每个单位单元施加公共电流幅度。
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3.发明授权公开(公告)号：US08004875B2
公开(公告)日：2011-08-23
申请号：US12502212
申请日：2009-07-13
Applicant: Markus Jan Peter Siegert , Michael Xuefei Tang , Andrew John Carter , Alan Xuguang Wang
IPC: G11C11/00
CPC classification number: G11C8/08 , G11C5/025 , G11C7/12 , G11C11/1659 , G11C11/1675
Abstract: A data storage device and associated method for providing current magnitude compensation for memory cells in a data storage array. In accordance with some embodiments, unit cells are connected between spaced apart first and second control lines of common length. An equalization circuit is configured to respectively apply a common current magnitude through each of the unit cells by adjusting a voltage applied to the cells in relation to a location of each of the cells along the first and second control lines.
Abstract translation: 一种用于为数据存储阵列中的存储器单元提供电流幅度补偿的数据存储装置和相关方法。 根据一些实施例，单元电池连接在具有公共长度的间隔开的第一和第二控制线之间。 均衡电路被配置为通过相对于沿着第一和第二控制线的每个单元的位置调整施加到单元的电压，分别对每个单位单元施加公共电流幅度。
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Patent Agency Ranking
公开(公告)号：US07813254B2
公开(公告)日：2010-10-12
申请号：US11704124
申请日：2007-02-08
Applicant: Markus Jan Peter Siegert , Andreas Karl Roelofs , Martin Gerard Forrester
IPC: G11B9/00
CPC classification number: G11C11/22
Abstract: An apparatus comprises mechanically scanned ferroelectric data storage media. A scanning electrode contacts the scannable surface with a contact force. The ferroelectric data storage media generates a piezoelectric potential that is picked up by the electrode. The piezoelectric potential has a polarity that varies as a function of data polarity on the data storage media.
Abstract translation: 一种装置包括机械扫描的铁电数据存储介质。 扫描电极用接触力接触可扫描表面。 铁电数据存储介质产生由电极拾取的压电电位。 压电电位具有根据数据存储介质上的数据极性的函数而变化的极性。
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公开(公告)号：US20090092032A1
公开(公告)日：2009-04-09
申请号：US11869037
申请日：2007-10-09
Applicant: Markus Jan Peter Siegert , Andreas Karl Roelofs , Martin Gerard Forrester
IPC: G11B9/02
CPC classification number: G11B9/02 , Y10S977/947
Abstract: An apparatus includes a first ferroelectric storage layer and a second ferroelectric storage layer adjacent the first ferroelectric storage layer. A coupling layer may be between the first ferroelectric storage layer and the second ferroelectric storage layer. The ferroelectric storage layers may be configured as a data storage medium for use in a data storage system. A related method is also disclosed.
Abstract translation: 一种装置包括与第一铁电存储层相邻的第一铁电存储层和第二铁电存储层。 耦合层可以在第一铁电存储层和第二铁电存储层之间。 铁电体存储层可以被配置为用于数据存储系统的数据存储介质。 还公开了相关方法。
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公开(公告)号：US20110007544A1
公开(公告)日：2011-01-13
申请号：US12501689
申请日：2009-07-13
Applicant: Venugopalan Vaithyanathan , Markus Jan Peter Siegert , Wei Tian , Muralikrishnan Balakrishnan , Insik Jin
Inventor： Venugopalan Vaithyanathan , Markus Jan Peter Siegert , Wei Tian , Muralikrishnan Balakrishnan , Insik Jin
CPC classification number: G11C13/02 , G11C13/0007 , G11C2213/31 , G11C2213/34 , G11C2213/54 , G11C2213/55 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/142 , H01L45/144 , H01L45/146
Abstract: A non-volatile memory cell and method of use therefore are disclosed. In accordance with various embodiments, the memory cell comprises a tunneling region disposed between a conducting region and a metal region, wherein the tunneling region comprises an active interface region disposed between a first tunneling barrier and a second tunneling barrier. A high resistive film is formed in the active interface region with migration of ions from both the metal and conducting regions responsive to a write current to program the memory cell to a selected resistive state.
Abstract translation: 因此公开了一种非易失性存储单元及其使用方法。 根据各种实施例，存储器单元包括设置在导电区域和金属区域之间的隧道区域，其中隧穿区域包括设置在第一隧道势垒和第二隧道势垒之间的有源界面区域。 在有源界面区域中形成高电阻膜，其中响应于写入电流使来自金属和导电区域的离子的迁移，以将存储器单元编程到选定的电阻状态。
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公开(公告)号：US07869335B2
公开(公告)日：2011-01-11
申请号：US11869037
申请日：2007-10-09
Applicant: Markus Jan Peter Siegert , Andreas Karl Roelofs , Martin Gerard Forrester
IPC: G11B7/00
CPC classification number: G11B9/02 , Y10S977/947
Abstract: An apparatus includes a first ferroelectric storage layer and a second ferroelectric storage layer adjacent the first ferroelectric storage layer. A coupling layer may be between the first ferroelectric storage layer and the second ferroelectric storage layer. The ferroelectric storage layers may be configured as a data storage medium for use in a data storage system. A related method is also disclosed.
Abstract translation: 一种装置包括与第一铁电存储层相邻的第一铁电存储层和第二铁电存储层。 耦合层可以在第一铁电存储层和第二铁电存储层之间。 铁电体存储层可以被配置为用于数据存储系统的数据存储介质。 还公开了相关方法。
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公开(公告)号：US20080192528A1
公开(公告)日：2008-08-14
申请号：US11704124
申请日：2007-02-08
Applicant: Markus Jan Peter Siegert , Andreas Karl Roelofs , Martin Gerard Forrester
IPC: G11C11/22
CPC classification number: G11C11/22
Abstract: An apparatus comprises mechanically scanned ferroelectric data storage media. A scanning electrode contacts the scannable surface with a contact force. The ferroelectric data storage media generates a piezoelectric potential that is picked up by the electrode. The piezoelectric potential has a polarity that varies as a function of data polarity on the data storage media.
Abstract translation: 一种装置包括机械扫描的铁电数据存储介质。 扫描电极用接触力接触可扫描表面。 铁电数据存储介质产生由电极拾取的压电电位。 压电电位具有根据数据存储介质上的数据极性的函数而变化的极性。
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