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    Phase change memory device and write method thereof
    2.
    发明授权
    Phase change memory device and write method thereof 有权
    相变存储器件及其写入方法

    公开(公告)号：US08050083B2

    公开(公告)日：2011-11-01

    申请号：US12320963

    申请日：2009-02-10

    申请人： Dae-Won Ha ,  Jung-Hyuk Lee ,  Gi-Tae Jeong ,  Hyeong-Jun Kim

    发明人： Dae-Won Ha ,  Jung-Hyuk Lee ,  Gi-Tae Jeong ,  Hyeong-Jun Kim

    IPC分类号： G11C11/00

    CPC分类号： G11C13/0069 ,  G11C11/005 ,  G11C13/0004 ,  G11C13/0033 ,  G11C14/00 ,  G11C16/3431 ,  G11C29/028 ,  G11C2013/0078 ,  G11C2213/72

    摘要： A phase change memory device and a write method thereof allow writing of both volatile and non-volatile data on the phase change memory device. The phase change memory device may be written by setting a write mode as one of a volatile write mode and a non-volatile write mode, and writing data as volatile or non-volatile by applying a write pulse corresponding to the write mode, wherein, when power is not supplied to the phase change memory device, the non-volatile data is retained and the volatile data is not retained.

    摘要翻译： 相变存储器件及其写入方法允许在相变存储器件上写入易失性和非易失性数据。 可以通过将写入模式设置为易失性写入模式和非易失性写入模式之一来写入相变存储器件，并且通过施加与写入模式对应的写入脉冲将数据写入作为易失性或非易失性， 当不向相变存储器件供电时，保持非易失性数据并且不保留易失性数据。

    Memory devices with selective pre-write verification and methods of operation thereof
    4.
    发明授权
    Memory devices with selective pre-write verification and methods of operation thereof 有权
    具有选择性预写验证的存储器件及其操作方法

    公开(公告)号：US07843741B2

    公开(公告)日：2010-11-30

    申请号：US12419934

    申请日：2009-04-07

    申请人： Hong-Sik Jeong ,  Kwang-Jin Lee ,  Dae-Won Ha ,  Gi-Tae Jeong ,  Jung-Hyuk Lee

    发明人： Hong-Sik Jeong ,  Kwang-Jin Lee ,  Dae-Won Ha ,  Gi-Tae Jeong ,  Jung-Hyuk Lee

    IPC分类号： G11C7/10

    CPC分类号： G11C8/10 ,  G11C7/1006 ,  G11C13/0004 ,  G11C13/0035 ,  G11C13/0064 ,  G11C13/0069 ,  G11C16/3459 ,  G11C2013/0076

    摘要： A number of read cycles applied to a selected memory location of a memory device, such as a variable-resistance memory device, is monitored. Write data to be written to the selected memory location is received. Selective pre-write verifying and writing of the received write data to the selected memory location occurs based on the monitored number of read cycles. Selectively pre-write verifying and writing of the received write data may include, for example, writing received write data to the selected memory cell region without pre-write verification responsive to the monitored number of read cycles being greater than a predetermined number of read cycles.

    摘要翻译： 监视应用于诸如可变电阻存储器件的存储器件的选定存储器位置的多个读周期。 接收要写入所选存储单元的写入数据。 基于所监视的读取周期数，对接收的写入数据进行选择性的预写入验证和写入。 选择性地预写入验证和写入所接收的写入数据可以包括例如将接收到的写入数据写入所选择的存储器单元区域，而无需预写入验证，响应于所监视的读取周期数大于预定数量的读取周期 。

    Resistive memory device and sensing margin trimming method thereof
    5.
    发明授权
    Resistive memory device and sensing margin trimming method thereof 有权
    电阻式存储器件及其检测边缘微调方法

    公开(公告)号：US08902628B2

    公开(公告)日：2014-12-02

    申请号：US13485163

    申请日：2012-05-31

    申请人： Daewon Ha ,  Jung Hyuk Lee

    发明人： Daewon Ha ,  Jung Hyuk Lee

    IPC分类号： G11C11/00 ,  G11C8/10 ,  G11C13/00

    CPC分类号： G11C8/10 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/003 ,  G11C13/0038 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0054 ,  G11C2213/75

    摘要： A resistive memory device and a sensing margin trimming method are provided. The resistive memory device includes a memory cell array and a trimming circuit. The memory cell array has a plurality of resistive memory cells. The trimming circuit generates a trimming signal according to a characteristic distribution shift value of the resistive memory cells. With the inventive concept, although a characteristic distribution of memory cells is varied, an erroneous read operation is minimized or reduced by securing a sensing margin stably. Accordingly, a fabrication yield of the resistive memory device is bettered.

    摘要翻译： 提供了一种电阻式存储器件和感测余量修整方法。 电阻式存储器件包括存储单元阵列和微调电路。 存储单元阵列具有多个电阻存储单元。 微调电路根据电阻性存储单元的特征分布偏移值产生微调信号。 利用本发明的概念，尽管存储单元的特性分布是变化的，但是通过稳定地确保感测余量来最小化或减少错误的读取操作。 因此，提高了电阻式存储器件的制造成品率。

    MEMORY SYSTEM INCLUDING NONVOLATILE MEMORY AND METHOD OF OPERATING NONVOLATILE MEMORY
    6.
    发明申请
    MEMORY SYSTEM INCLUDING NONVOLATILE MEMORY AND METHOD OF OPERATING NONVOLATILE MEMORY 有权
    包含非易失性存储器的存储系统和操作非易失性存储器的方法

    公开(公告)号：US20140119108A1

    公开(公告)日：2014-05-01

    申请号：US14068076

    申请日：2013-10-31

    申请人： Jung Hyuk LEE

    发明人： Jung Hyuk LEE

    IPC分类号： G11C29/08 ,  G11C11/02

    CPC分类号： G11C29/08 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/1677 ,  G11C29/42 ,  G11C29/44 ,  G11C29/52 ,  G11C2029/4402

    摘要： A memory system, and an operation method of a nonvolatile memory, include programming memory cells using a normal program pulse, reading out a first set of data from the memory cells, detecting failed cells based on the first set of data, storing information about the failed cells in a buffer, and reprogramming the failed cells using a reinforced program pulse in an idle state based on the information stored in the buffer.

    摘要翻译： 存储器系统和非易失性存储器的操作方法包括使用正常编程脉冲编程存储器单元，从存储器单元读出第一组数据，基于第一组数据检测故障单元，存储关于 基于存储在缓冲器中的信息，使用处于空闲状态的加强编程脉冲重新编程故障单元。

    MEMORY DEVICES WITH SELECTIVE PRE-WRITE VERIFICATION AND METHODS OF OPERATION THEREOF
    8.
    发明申请
    MEMORY DEVICES WITH SELECTIVE PRE-WRITE VERIFICATION AND METHODS OF OPERATION THEREOF 有权
    具有选择性预写验证的存储器件及其操作方法

    公开(公告)号：US20090285008A1

    公开(公告)日：2009-11-19

    申请号：US12419934

    申请日：2009-04-07

    申请人： Hong-Sik Jeong ,  Kwang-Jin Lee ,  Dae-Won Ha ,  Gi-Tae Jeong ,  Jung-Hyuk Lee

    发明人： Hong-Sik Jeong ,  Kwang-Jin Lee ,  Dae-Won Ha ,  Gi-Tae Jeong ,  Jung-Hyuk Lee

    IPC分类号： G11C11/00 ,  G11C7/00

    CPC分类号： G11C8/10 ,  G11C7/1006 ,  G11C13/0004 ,  G11C13/0035 ,  G11C13/0064 ,  G11C13/0069 ,  G11C16/3459 ,  G11C2013/0076

    摘要： A number of read cycles applied to a selected memory location of a memory device, such as a variable-resistance memory device, is monitored. Write data to be written to the selected memory location is received. Selective pre-write verifying and writing of the received write data to the selected memory location occurs based on the monitored number of read cycles. Selectively pre-write verifying and writing of the received write data may include, for example, writing received write data to the selected memory cell region without pre-write verification responsive to the monitored number of read cycles being greater than a predetermined number of read cycles

    摘要翻译： 监视应用于诸如可变电阻存储器件的存储器件的选定存储器位置的多个读周期。 接收要写入所选存储单元的写入数据。 基于所监视的读取周期数，对接收的写入数据进行选择性的预写入验证和写入。 选择性地预写入验证和写入所接收的写入数据可以包括例如将接收到的写入数据写入所选择的存储器单元区域，而无需预写入验证，响应于所监视的读取周期数大于预定数量的读取周期

    METHODS OF FABRICATING SEMICONDUCTOR DEVICE
    10.
    发明申请
    METHODS OF FABRICATING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20120225504A1

    公开(公告)日：2012-09-06

    申请号：US13411678

    申请日：2012-03-05

    申请人： SANG-HYUN HONG ,  JUNG-HYUK LEE ,  SU-JIN AHN ,  DAE-WON HA

    发明人： SANG-HYUN HONG ,  JUNG-HYUK LEE ,  SU-JIN AHN ,  DAE-WON HA

    IPC分类号： H01L21/66

    CPC分类号： H01L22/14 ,  H01L22/20 ,  H01L27/101 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of manufacturing a semiconductor device includes providing a wafer, forming a memory device which includes phase change material layer on the wafer, completing a wafer level process of manufacturing the semiconductor device, and performing a thermal treatment process on the wafer to densify the phase change material. To this end, the process temperature of the thermal treatment is higher than the crystallization temperature of the phase change material and lower than the melting point of the phase change material.

    摘要翻译： 一种制造半导体器件的方法包括提供晶片，形成在晶片上包括相变材料层的存储器件，完成制造半导体器件的晶片级工艺，以及对晶片进行热处理以使相位致密化 换材料 为此，热处理的工艺温度高于相变材料的结晶温度，并且低于相变材料的熔点。