发明授权
US08830728B2 Resistance change memory device and current trimming method thereof
有权
电阻变化存储器件及其电流修整方法
- 专利标题： Resistance change memory device and current trimming method thereof
- 专利标题（中）： 电阻变化存储器件及其电流修整方法
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申请号： US13554146申请日： 2012-07-20
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公开(公告)号： US08830728B2公开(公告)日： 2014-09-09
- 发明人: Jung Hyuk Lee , Daewon Ha , Kyu-Rie Sim
- 申请人： Jung Hyuk Lee , Daewon Ha , Kyu-Rie Sim
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Lee & Morse, P.C.
- 优先权： KR10-2011-0083412 20110822
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C8/00 ; G11C29/02 ; G11C13/00 ; G11C17/16 ; G11C11/16 ; G11C29/50
摘要：
A resistance change memory device includes an array of resistance change memory cells, and a writing circuit configured to reset a selected memory cell to a high resistance state by supplying a RESET current to the selected memory cell in the array of resistance change memory cells in a program operation mode, wherein a level of the RESET current depends on a distribution of initial RESET currents for the array of resistance change memory cells.
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