公开(公告)号：US08894768B2

公开(公告)日：2014-11-25

申请号：US12985649

申请日：2011-01-06

申请人： Byoung-Keon Park ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Jong-Won Hong ,  Heung-Yeol Na ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Won-Bong Baek ,  Ivan Maidanchuk ,  Byung-Soo So ,  Jae-Wan Jung

发明人： Byoung-Keon Park ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Jong-Won Hong ,  Heung-Yeol Na ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Won-Bong Baek ,  Ivan Maidanchuk ,  Byung-Soo So ,  Jae-Wan Jung

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  C23C16/46 ,  C23C16/458 ,  C23C16/455 ,  H01L21/673

摘要： A substrate processing apparatus that simultaneously forms thin films on a plurality of substrates and performs heat treatment includes: a plurality of substrate holders, each including a substrate support that supports a substrate and a first gas pipe having one or a plurality of injection holes; a boat where the plurality of substrate holders are stacked and including a second gas pipe connected with the first gas pipe of each of the substrate holders; a process chamber providing a space in which the substrates stacked in the boat are processed; a conveying unit that carries the boat into/out of the process chamber; a first heating unit disposed outside the process chamber; and a gas supply unit including a third gas pipe connected with the second gas pipe and supplying a heated or cooled gas into the second gas pipe.

公开(公告)号：US08791032B2

公开(公告)日：2014-07-29

申请号：US13200383

申请日：2011-09-23

申请人： Byoung-Keon Park ,  Jong-Ryuk Park ,  Dong-Hyun Lee ,  Jin-Wook Seo ,  Ki-Yong Lee

发明人： Byoung-Keon Park ,  Jong-Ryuk Park ,  Dong-Hyun Lee ,  Jin-Wook Seo ,  Ki-Yong Lee

IPC分类号： H01L29/18

CPC分类号： H01L27/3244 ,  H01L27/1288 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78606 ,  H01L29/78675 ,  H01L29/78696 ,  H01L2029/42388

摘要： A method of manufacturing a thin film transistor (TFT), a TFT manufactured by the method, a method of manufacturing an organic light-emitting display apparatus that includes the TFT, a display including the TFT. By including a buffer layer below and an insulating layer above a silicon layer for the TFT, the silicon layer can be crystallized without being exposed to air, so that contamination can be prevented. Also, due to the overlying insulating layer, the silicon layer can be patterned without directly contacting photoresist. The result is a TFT with uniform and improved electrical characteristics, and an improved display apparatus.

摘要翻译： 一种制造薄膜晶体管（TFT）的方法，通过该方法制造的TFT，制造包括TFT的有机发光显示装置的方法，包括TFT的显示器。 通过在TFT的下方包含缓冲层和在硅层上方的绝缘层，硅层可以结晶而不暴露于空气，从而可以防止污染。 此外，由于上覆绝缘层，可以将硅层图案化而不直接接触光致抗蚀剂。 结果是具有均匀和改善的电特性的TFT和改进的显示装置。

公开(公告)号：US08771420B2

公开(公告)日：2014-07-08

申请号：US12714019

申请日：2010-02-26

申请人： Heung-Yeol Na ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Yun-Mo Chung ,  Tae-Hoon Yang ,  Byung-Soo So ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Ivan Maidanchuk ,  Won-Bong Baek ,  Jae-Wan Jung

发明人： Heung-Yeol Na ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Yun-Mo Chung ,  Tae-Hoon Yang ,  Byung-Soo So ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Ivan Maidanchuk ,  Won-Bong Baek ,  Jae-Wan Jung

IPC分类号： C23C16/46 ,  H01L21/306 ,  C23F1/00 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01L21/67109

摘要： A substrate processing apparatus that forms thin films on a plurality of substrates and thermally processes the substrates, by uniformly heating the substrates. The substrate processing apparatus includes a processing chamber, a boat in which substrates are stacked, an external heater located outside of the processing chamber, a feeder to move the boat into and out of the processing chamber, a lower heater located below the feeder, and a central heater located in the center of the boat.

摘要翻译： 一种基板处理装置，其通过均匀加热基板，在多个基板上形成薄膜并对基板进行热处理。 基板处理装置包括处理室，堆叠基板的船，位于处理室外的外部加热器，将船移入和移出处理室的进给器，位于进料器下方的下加热器，以及 位于船中心的中央加热器。

公开(公告)号：US20130302535A1

公开(公告)日：2013-11-14

申请号：US13687183

申请日：2012-11-28

申请人： Yun-Mo CHUNG ,  Jeong-Yeong JEONG ,  Jong-Ryuk PARK ,  Jin-Wook SEO

发明人： Yun-Mo CHUNG ,  Jeong-Yeong JEONG ,  Jong-Ryuk PARK ,  Jin-Wook SEO

IPC分类号： C23C14/34

CPC分类号： C23C14/34 ,  C23C14/564 ,  H01J37/32532 ,  H01J37/34

摘要： A sputter device includes a cathode portion including a target support portion coupled to a front surface of a cathode main body, a target being mounted on the front surface of the cathode main body and being supported by the target support portion, an anode portion including an anode coupled to an anode main body, the anode main body surrounding a side and a bottom of the cathode portion, and the anode covering the target support portion and an edge of the target, an internal insulator between the cathode portion and the anode main body, an electrode insulator between the anode and each of the target support portion and the edge of the target, and a power source portion connected to the cathode portion and the anode portion.

摘要翻译： 溅射装置包括阴极部分，其包括耦合到阴极主体的前表面的靶支撑部分，靶安装在阴极主体的前表面上并由靶支撑部分支撑，阳极部分包括 负极连接到阳极主体，阳极主体围绕阴极部分的侧面和底部，阳极覆盖目标支撑部分和靶材的边缘，阴极部分和阳极主体之间的内部绝缘体 阳极与目标支撑部分和靶的边缘之间的电极绝缘体，以及连接到阴极部分和阳极部分的电源部分。

公开(公告)号：US08528163B2

公开(公告)日：2013-09-10

申请号：US12704915

申请日：2010-02-12

申请人： Sang-Jun Park ,  Young-Min Hyun ,  Hyuk-Joo Kwon ,  Hyo-Churl Shin ,  Hae-Seock Yang ,  Jin-Wook Seo

发明人： Sang-Jun Park ,  Young-Min Hyun ,  Hyuk-Joo Kwon ,  Hyo-Churl Shin ,  Hae-Seock Yang ,  Jin-Wook Seo

IPC分类号： A47L9/10 ,  A47L9/20

CPC分类号： A47L9/26 ,  A47L9/0081 ,  A47L9/122

摘要： A vacuum cleaner is provided. The vacuum cleaner may include a dust separation device that separates dust and a dust container in which the dust separated in the dust separation device may be stored.

摘要翻译： 提供吸尘器。 真空吸尘器可以包括灰尘分离装置，其分离灰尘和灰尘分离装置中分离的灰尘的灰尘容器。

公开(公告)号：US08507914B2

公开(公告)日：2013-08-13

申请号：US12649980

申请日：2009-12-30

申请人： Dong-Hyun Lee ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Maxim Lisachenko ,  Byoung-Keon Park ,  Kil-Won Lee ,  Jae-Wan Jung

发明人： Dong-Hyun Lee ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Maxim Lisachenko ,  Byoung-Keon Park ,  Kil-Won Lee ,  Jae-Wan Jung

IPC分类号： H01L29/10 ,  H01L31/036

CPC分类号： H01L29/66765 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L29/66757 ,  H01L29/78696

摘要： A thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode (OLED) display device equipped with the thin film transistor of which the thin film transistor includes a substrate, a buffer layer disposed on the substrate, a first semiconductor layer and a second semiconductor layer disposed on the buffer layer, a gate electrode insulated from the first semiconductor layer and the second semiconductor layer, a gate insulating layer insulating the gate electrode from the first semiconductor layer and the second semiconductor layer, and source and drain electrodes insulated from the gate electrode and partially connected to the second semiconductor layer, wherein the second semiconductor layer is disposed on the first semiconductor layer.

摘要翻译： 薄膜晶体管，薄膜晶体管的制造方法以及配备有薄膜晶体管的有机发光二极管（OLED）显示装置，其中薄膜晶体管包括基板，设置在基板上的缓冲层， 第一半导体层和设置在缓冲层上的第二半导体层，与第一半导体层和第二半导体层绝缘的栅电极，将栅电极与第一半导体层和第二半导体层绝缘的栅极绝缘层，以及源极 以及与栅电极绝缘并部分地连接到第二半导体层的漏电极，其中第二半导体层设置在第一半导体层上。

公开(公告)号：US20130175534A1

公开(公告)日：2013-07-11

申请号：US13477802

申请日：2012-05-22

申请人： Yun-Mo Chung ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Jong-Ryuk Park

发明人： Yun-Mo Chung ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Jong-Ryuk Park

IPC分类号： H01L29/786 ,  H01L21/20 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L29/78603 ,  H01L27/1218

摘要： A semiconductor device and a method of manufacturing the same are disclosed. In one embodiment, the semiconductor device includes a substrate, a first silicon nitride layer formed over the substrate, a first silicon oxide layer formed directly on the first silicon nitride layer and having a thickness of about 1000 Å or less, and a hydrogenated polycrystalline silicon layer formed directly on the first silicon oxide layer.

摘要翻译： 公开了一种半导体器件及其制造方法。 在一个实施例中，半导体器件包括衬底，在衬底上形成的第一氮化硅层，直接形成在第一氮化硅层上并具有约1000或更小的厚度的第一氧化硅层和氢化多晶硅 层直接形成在第一氧化硅层上。

公开(公告)号：US08445336B2

公开(公告)日：2013-05-21

申请号：US12891379

申请日：2010-09-27

申请人： Tae-Hoon Yang ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Byoung-Keon Park ,  Kil-Won Lee

发明人： Tae-Hoon Yang ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Byoung-Keon Park ,  Kil-Won Lee

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/4908 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02694 ,  H01L27/1277 ,  H01L29/78654

摘要： A method of fabricating a polycrystalline silicon (poly-Si) layer includes providing a substrate, forming an amorphous silicon (a-Si) layer on the substrate, forming a thermal oxide layer to a thickness of about 10 Å to 50 Å on the a-Si layer, forming a metal catalyst layer on the thermal oxide layer, and annealing the substrate to crystallize the a-Si layer into the poly-Si layer using a metal catalyst of the metal catalyst layer. Thus, the a-Si layer can be crystallized into a poly-Si layer by a super grain silicon (SGS) crystallization method. Also, the thermal oxide layer may be formed during the dehydrogenation of the a-Si layer so that an additional process of forming a capping layer required for the SGS crystallization method can be omitted, thereby simplifying the fabrication process.

摘要翻译： 一种制造多晶硅（poly-Si）层的方法包括提供衬底，在衬底上形成非晶硅（a-Si）层，形成厚度约为的厚度的氧化物层 -Si层，在所述热氧化物层上形成金属催化剂层，并且使所述金属催化剂层的金属催化剂退火所述基板以使a-Si层结晶成多晶硅层。 因此，可以通过超晶硅（SGS）结晶法将a-Si层结晶成多晶硅层。 此外，可以在a-Si层的脱氢过程中形成热氧化物层，从而可以省略形成SGS结晶方法所需的另外的形成覆盖层的工艺，从而简化了制造工艺。

公开(公告)号：US20130122664A1

公开(公告)日：2013-05-16

申请号：US13739866

申请日：2013-01-11

申请人： Yun-Mo CHUNG ,  Ki-Yong LEE ,  Jin-Wook SEO ,  Min-Jae JEONG ,  Yong-Duck SON ,  Byung-Soo SO ,  Seung-Kyu PARK ,  Byoung-Keon PARK ,  Dong-Hyun LEE ,  Kil-Won LEE ,  Tak-Young LEE ,  Jong-Ryuk PARK ,  Jae-Wan JUNG

发明人： Yun-Mo CHUNG ,  Ki-Yong LEE ,  Jin-Wook SEO ,  Min-Jae JEONG ,  Yong-Duck SON ,  Byung-Soo SO ,  Seung-Kyu PARK ,  Byoung-Keon PARK ,  Dong-Hyun LEE ,  Kil-Won LEE ,  Tak-Young LEE ,  Jong-Ryuk PARK ,  Jae-Wan JUNG

IPC分类号： H01L29/66

CPC分类号： H01L29/66742 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3262 ,  H01L27/3274 ,  H01L29/66757 ,  H01L29/78618 ,  H01L51/0081

摘要： A substrate including a thin film transistor, the substrate including an active layer disposed on the substrate, the active layer including a channel area and source and drain areas, a gate electrode disposed on the active layer, the channel area corresponding to the gate electrode, a gate insulating layer interposed between the active layer and the gate electrode, an interlayer insulating layer disposed to cover the active layer and the gate electrode, the interlayer insulating layer having first and second contact holes partially exposing the active layer, source and drain electrodes disposed on the interlayer insulating layer, the source and drain areas corresponding to the source and drain electrodes, and ohmic contact layers, the ohmic contact layers being interposed between the interlayer insulating layer and the source and drain electrodes, and contacting the source and drain areas through the first and second contact holes.

摘要翻译： 一种包括薄膜晶体管的基板，所述基板包括设置在所述基板上的有源层，所述有源层包括沟道区域和源极和漏极区域，设置在所述有源层上的栅极电极，对应于所述栅电极的沟道区域， 插入在有源层和栅电极之间的栅极绝缘层，设置成覆盖有源层和栅电极的层间绝缘层，具有部分地暴露有源层的第一和第二接触孔的层间绝缘层，设置的源极和漏极 在层间绝缘层上，对应于源极和漏极以及欧姆接触层的源极和漏极区域，欧姆接触层介于层间绝缘层和源极和漏极之间，并且使源极和漏极区域通过 第一和第二接触孔。

公开(公告)号：US20120305921A1

公开(公告)日：2012-12-06

申请号：US13449423

申请日：2012-04-18

申请人： Byoung-Keon PARK ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Heung-Yeol Na

发明人： Byoung-Keon PARK ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Heung-Yeol Na

IPC分类号： H01L51/52 ,  H01L29/786 ,  H01L21/336

CPC分类号： H01L29/66757 ,  H01L27/1277 ,  H01L27/3244

摘要： A thin film transistor may include a substrate, a buffer layer on the substrate, a semiconductor layer formed on the buffer layer, a gate insulating pattern on the semiconductor layer, a gate electrode on the gate insulating pattern, an interlayer insulating layer covering the gate electrode and the gate insulating pattern, the interlayer insulating layer having a contact hole and an opening extending therethrough, the contact hole exposing a source area and a drain area of the semiconductor layer, and the opening exposing a channel area of the semiconductor layer, and a source electrode and a drain electrode formed on the interlayer insulating layer, the source electrode being connected with the source area and the drain electrode being connected with the drain area of the semiconductor layer.

摘要翻译： 薄膜晶体管可以包括衬底，衬底上的缓冲层，形成在缓冲层上的半导体层，半导体层上的栅极绝缘图案，栅极绝缘图案上的栅电极，覆盖栅极的层间绝缘层 电极和栅极绝缘图案，所述层间绝缘层具有接触孔和延伸穿过其的开口，所述接触孔暴露所述半导体层的源极区域和漏极区域，并且所述开口暴露所述半导体层的沟道区域，以及 源电极和漏电极，形成在层间绝缘层上，源极与源区连接，漏电极与半导体层的漏极区连接。