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    Method for providing a temporary, deep shunt on wafer structures for electrostatic discharge protection during processing
    3.
    发明授权
    Method for providing a temporary, deep shunt on wafer structures for electrostatic discharge protection during processing 有权
    用于在晶片结构上提供临时的深分流以在处理期间进行静电放电保护的方法

    公开(公告)号：US07469466B2

    公开(公告)日：2008-12-30

    申请号：US11029134

    申请日：2005-01-04

    Applicant: Robert Stanley Beach ,  David John Seagle ,  Jila Tabib

    Inventor： Robert Stanley Beach ,  David John Seagle ,  Jila Tabib

    IPC: G11B5/187

    CPC classification number: G11B5/11 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/40 ,  G11B5/455 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49046 ,  Y10T29/49156

    Abstract: A method of temporarily protecting an electrically sensitive component from damage due to electrostatic discharge is disclosed. The method includes the steps of defining a first shield that forms a first lead for both a component and a shunt; depositing a conductive material on the first shield to form the component and the shunt; defining an edge of the component and an edge of the shunt together in a single masking step; refilling with insulation adjacent the component and the shunt to their respective edges on the first shield; defining a second shield on both the component and the shunt that forms a second lead for both the component and the shunt to form a shunted assembly that electrically protects the component; lapping the shunted assembly; and removing a portion of the shunted assembly to remove the shunt and form an electrical open for an unshunted assembly.

    Abstract translation: 公开了一种暂时保护电敏元件免受静电放电损坏的方法。 该方法包括以下步骤：为组件和分路形成用于形成第一引线的第一屏蔽; 在第一屏蔽上沉积导电材料以形成部件和分路; 在单个掩蔽步骤中将所述部件的边缘和所述分流器的边缘一起定义; 重新填充邻近部件的绝缘体和分流到其第一屏蔽件上的相应边缘; 在所述部件和所述分流器上限定形成用于所述部件和分流器的第二引线的第二屏蔽件，以形成电保护所述部件的分流组件; 研磨分流组件; 以及去除分流组件的一部分以去除分流器并形成用于未被处理的组件的电气开口。

    Slider incorporating heaters and ELGs and method of fabrication
    4.
    发明申请
    Slider incorporating heaters and ELGs and method of fabrication 审中-公开
    带有加热器和ELG的滑块和制造方法

    公开(公告)号：US20070230056A1

    公开(公告)日：2007-10-04

    申请号：US11397823

    申请日：2006-04-03

    Applicant: Robert Beach ,  David Seagle ,  Jila Tabib

    Inventor： Robert Beach ,  David Seagle ,  Jila Tabib

    IPC: G11B5/60

    CPC classification number: G11B5/6064 ,  G11B5/6005

    Abstract: A slider for a magnetic disk drive is disclosed which includes a heater circuit structure, and at least one ELG circuit structure where a portion of the ELG circuit structure is removable by lapping. The ELG circuit structure is connected electrically in parallel with the heater circuit structure to a common set of electrical contact pads to produce a measured initial parallel resistance as measured at the common set of electrical contact pads. A modified parallel resistance is calculated to correspond to that of the modified individual resistance of the ELG when lapping operation is completed. The resistance is monitored during lapping operations to signal when the appropriate lapping depth is achieved. Also disclosed is a disk drive having the slider, and a method of fabrication for a slider.

    Abstract translation: 公开了一种用于磁盘驱动器的滑动器，其包括加热器电路结构，以及至少一个ELG电路结构，其中ELG电路结构的一部分可通过研磨而移除。 ELG电路结构与加热器电路结构并联连接到一组共同的电接触焊盘，以产生在公共电接触焊盘组测量的测量的初始并联电阻。 当研磨操作完成时，计算修改的并联电阻以对应于ELG的修改的单独电阻。 在研磨操作期间监测电阻，以在达到适当的研磨深度时发出信号。 还公开了具有滑块的盘驱动器及其制造方法。

    Two step resetting of magnetization of spin valve read head at the row level
    6.
    发明授权
    Two step resetting of magnetization of spin valve read head at the row level 失效
    自动旋转阀读头在行级两步复位

    公开(公告)号：US5974657A

    公开(公告)日：1999-11-02

    申请号：US44428

    申请日：1998-03-19

    Applicant: Ciaran Fox ,  Hardayal Singh Gill ,  Virgil Simon Speriosu ,  Jila Tabib

    Inventor： Ciaran Fox ,  Hardayal Singh Gill ,  Virgil Simon Speriosu ,  Jila Tabib

    IPC: G11B5/00 ,  G11B5/31 ,  G11B5/39 ,  G11B5/465 ,  G11B5/42

    CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/0008 ,  G11B2005/3996 ,  G11B5/3103 ,  G11B5/3113 ,  G11B5/3163 ,  G11B5/465 ,  Y10T29/49034 ,  Y10T29/49036 ,  Y10T29/49044

    Abstract: A method is provided for resetting the magnetization of the pinned and hard biasing layers of a spin valve read head at the row level. In a first embodiment of the invention a first magnetic field is applied substantially perpendicular to the air bearing surface (ABS) at room temperature for setting the magnetic moment of the pinned layer substantially perpendicular to the ABS followed by applying a second magnetic field substantially parallel to the ABS for setting the magnetic moments of the hard biasing layers substantially parallel to the ABS. In a second embodiment of the invention the antiferromagnetic pinning layer is also reset. This is done by heating the pinning layer with a current pulse conducted through the leads to the conductive layers of the spin valve head so that localized heating takes place adjacent the pinning layer as contrasted to ambient heating of the spin valve head. Simultaneous with the localized heating the first magnetic field is applied for orienting the magnetic spins of the pinning layer perpendicular to the ABS and resetting the magnetic moment of the pinned layer perpendicular to the ABS in a single domain state. Subsequently, a second magnetic field is applied for resetting the magnetic moment of the hard biasing layer parallel to the ABS in a single domain state.

    Abstract translation: 提供一种用于在行级别复位自旋阀读头的被钉扎和硬偏置层的磁化的方法。 在本发明的第一实施例中，在室温下基本上垂直于空气轴承表面（ABS）施加第一磁场，用于将被钉扎层的磁矩基本上垂直于ABS，然后施加基本上平行于 用于设置硬偏置层的磁矩基本上平行于ABS的ABS。 在本发明的第二实施例中，反铁磁钉扎层也被复位。 这是通过将导线穿过引线的电流脉冲加热到钉扎层来完成的，所述电流脉冲与自旋阀头的导电层相反，使得与旋转阀头的环境加热相反，在钉扎层附近发生局部加热。 与局部加热同时，施加第一磁场用于定向垂直于ABS的钉扎层的磁自旋，并以单域状态重置垂直于ABS的钉扎层的磁矩。 随后，施加第二磁场以在单个域状态下复位与ABS平行的硬偏置层的磁矩。

    ELECTRICAL LAPPING GUIDES MADE FROM TUNNELING MAGNETORESISTIVE (TMR) MATERIAL
    8.
    发明申请
    ELECTRICAL LAPPING GUIDES MADE FROM TUNNELING MAGNETORESISTIVE (TMR) MATERIAL 失效
    隧道磁铁（TMR）材料制成的电气导线

    公开(公告)号：US20070246761A1

    公开(公告)日：2007-10-25

    申请号：US11379321

    申请日：2006-04-19

    Applicant: Robert Beach ,  Daniele Mauri ,  David Seagle ,  Jila Tabib

    Inventor： Robert Beach ,  Daniele Mauri ,  David Seagle ,  Jila Tabib

    IPC: H01L29/94

    CPC classification number: G11B5/3173 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3169 ,  G11B5/3906 ,  G11B5/3909 ,  H01L43/12

    Abstract: Tunneling magnetoresistive (TMR) electrical lapping guides (ELG) are disclosed for use in wafer fabrication of magnetic sensing devices, such as magnetic recording heads using TMR read elements. A TMR ELG includes a TMR stack comprising a first conductive layer, a barrier layer, and a second conductive layer of TMR material. The TMR ELG also includes a first lead and a second lead that connect to conductive pads used for applying a sense current to the TMR ELG in a current in plane (CIP) fashion. The first lead contacts one side of the TMR stack so that the first lead contacts both the first conductive layer and the second conductive layer of the TMR stack. The second lead contacts the other side of the TMR stack so that the second lead contacts both the first conductive layer and the second conductive layer of the TMR stack.

    Abstract translation: 公开了隧道磁阻（TMR）电研磨引导件（ELG），用于磁感测装置的晶片制造，例如使用TMR读取元件的磁记录头。 TMR ELG包括TMR堆叠，其包括第一导电层，阻挡层和TMR材料的第二导电层。 TMR ELG还包括连接到用于以当前平面（CIP）方式向TMR ELG施加感测电流的导电焊盘的第一引线和第二引线。 第一引线接触TMR堆叠的一侧，使得第一引线接触TMR堆叠的第一导电层和第二导电层。 第二引线接触TMR堆叠的另一侧，使得第二引线接触TMR堆叠的第一导电层和第二导电层。

    System, method, and apparatus for providing a temporary, deep shunt on wafer structures for electrostatic discharge protection during processing
    9.
    发明申请
    System, method, and apparatus for providing a temporary, deep shunt on wafer structures for electrostatic discharge protection during processing 有权
    用于在晶片结构上提供用于处理期间的静电放电保护的临时的深度分流的系统，方法和装置

    公开(公告)号：US20060146450A1

    公开(公告)日：2006-07-06

    申请号：US11029134

    申请日：2005-01-04

    Applicant: Robert Beach ,  David Seagle ,  Jila Tabib

    Inventor： Robert Beach ,  David Seagle ,  Jila Tabib

    IPC: H04R31/00 ,  G11B5/127 ,  G11B5/33 ,  B44C1/22 ,  B24B1/00

    CPC classification number: G11B5/11 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/40 ,  G11B5/455 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49046 ,  Y10T29/49156

    Abstract: A wafer-level shunt is incorporated into a sensor design. The sensor is formed with two shields. When the ABS is etched into the slider, this region of the ABS is recessed to form a deep etch region. A top of the shunt is centered in this region and a bottom of the shunt is located therebelow. The two shields form the sensor leads and are electrically connected to the shunt. The shunt is fabricated by depositing and plating a shield one seed layer, and plating a shield one bar for the shunt. A protection layer protects the seed between shield one and the shield one shunt material. Some of the material is deposited, milled, and refilled with insulation. The unmilled material remains as the sensor and the deep etch shunt. Shield two is deposited and connects to the top of the deep etch shunt. A metallic lead connection is located between the two shields to short the shield two shunt material to shield two of the sensor.

    Abstract translation: 晶片级分流器并入传感器设计中。 传感器由两个屏蔽构成。 当ABS被滑入滑块时，ABS的该区域被凹入以形成深刻蚀区域。 分流器的顶部位于该区域的中心，并且分流器的底部位于其下方。 两个屏蔽件形成传感器引线并且电连接到分流器。 分流是通过沉积和镀覆屏蔽一个种子层而制成的，并且将屏蔽电镀一个条以用于分路。 保护层保护屏蔽层与屏蔽层之间的种子分离材料。 一些材料被沉积，研磨并用绝缘材料重新填充。 未磨损的材料保持为传感器和深刻蚀分流。 屏蔽二被沉积并连接到深蚀刻分流器的顶部。 金属引线连接位于两个屏蔽之间，以将屏蔽两个分流材料短路以屏蔽两个传感器。

    Methods of making magnetic write heads with use of a resist channel shrinking solution having corrosion inhibitors
    10.
    发明申请
    Methods of making magnetic write heads with use of a resist channel shrinking solution having corrosion inhibitors 审中-公开
    使用具有腐蚀抑制剂的抗蚀剂通道收缩溶液制造磁性写入头的方法

    公开(公告)号：US20060096081A1

    公开(公告)日：2006-05-11

    申请号：US11312064

    申请日：2005-12-19

    Applicant: Christian Bonhote ,  Jila Tabib ,  Dennis McKean ,  Daniel Bedell ,  Jyh-Shuey Lo ,  Hieu Lam ,  Kim Lee

    Inventor： Christian Bonhote ,  Jila Tabib ,  Dennis McKean ,  Daniel Bedell ,  Jyh-Shuey Lo ,  Hieu Lam ,  Kim Lee

    IPC: G11B5/127 ,  H04R31/00

    CPC classification number: G11B5/3116 ,  G11B5/3163 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49048 ,  Y10T29/49052

    Abstract: One preferred method for use in making a magnetic write head with use of the resist channel shrinking solution includes the steps of forming a first pole piece layer of a first pole piece; forming a gap layer over the first pole piece layer; forming a patterned resist over the first pole piece layer and the gap layer; electroplating a first pedestal portion of a second pole piece over the gap layer within a channel of the patterned resist; forming an oxide layer over the first pedestal portion; applying the resist channel shrinking solution comprising the resist channel shrinking film and the corrosion inhibitors over the patterned resist; baking the resist channel shrinking solution over the patterned resist to thereby reduce a width of the channel; removing the resist channel shrinking solution; electroplating a second pedestal portion of the second pole piece within the reduced-width channel of the patterned resist; removing the patterned resist; and milling the structure. Advantageously, the oxide layer and the corrosion inhibitors of the resist channel shrinking solution reduce corrosion in the pole piece during the act of baking the resist channel shrinking solution.

    Abstract translation: 使用抗蚀剂通道收缩溶液制造磁性写入头的一种优选方法包括以下步骤：形成第一极片的第一极片层; 在所述第一极片层上形成间隙层; 在所述第一极片层和所述间隙层上形成图案化的抗蚀剂; 在图案化的抗蚀剂的通道内的间隙层上电镀第二极片的第一基座部分; 在所述第一基座部分上形成氧化物层; 在图案化的抗蚀剂上施加包含抗蚀剂通道收缩膜和腐蚀抑制剂的抗蚀剂通道收缩溶液; 在图案化的抗蚀剂上烘烤抗蚀剂通道收缩溶液，从而减小通道的宽度; 去除抗蚀剂通道收缩溶液; 在所述图案化抗蚀剂的所述减小宽度的通道内电镀所述第二极靴的第二基座部分; 去除图案化的抗蚀剂; 并研磨结构。 有利地，抗蚀剂通道收缩溶液的氧化物层和腐蚀抑制剂在烘烤抗蚀剂通道收缩溶液的作用期间减少极片中的腐蚀。

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