摘要:
The present disclosure relates to a bipolar junction transistor (BJT) structure that significantly reduces current crowding while improving the current gain relative to conventional BJTs. The BJT includes a collector, a base region, and an emitter. The base region is formed over the collector and includes at least one extrinsic base region and an intrinsic base region that extends above the at least one extrinsic base region to provide a mesa. The emitter is formed over the mesa. The BJT may be formed from various material systems, such as the silicon carbide (SiC) material system. In one embodiment, the emitter is formed over the mesa such that essentially none of the emitter is formed over the extrinsic base regions. Typically, but not necessarily, the intrinsic base region is directly laterally adjacent the at least one extrinsic base region.
摘要:
A negative bevel edge termination for a Silicon Carbide (SiC) semiconductor device is disclosed. In one embodiment, the negative bevel edge termination includes multiple steps that approximate a smooth negative bevel edge termination at a desired slope. More specifically, in one embodiment, the negative bevel edge termination includes at least five steps, at least ten steps, or at least 15 steps. The desired slope is, in one embodiment, less than or equal to fifteen degrees. In one embodiment, the negative bevel edge termination results in a blocking voltage for the semiconductor device of at least 10 kilovolts (kV) or at least 12 kV. The semiconductor device is preferably, but not necessarily, a thyristor such as a power thyristor, a Bipolar Junction Transistor (BJT), an Insulated Gate Bipolar Transistor (IGBT), a U-channel Metal-Oxide-Semiconductor Field Effect Transistor (UMOSFET), or a PIN diode.
摘要:
An organic light emitting diode display is disclosed. The organic light emitting diode display includes a base substrate including a display area and a non-display area around the display area, a plurality of pixels formed over the display area of the base substrate, the plurality of pixels including a common electrode, a common power line formed over the base substrate and electrically connected to a circuit of each of the plurality of pixels, an encapsulation substrate bonded to the base substrate by a sealing member surrounding the plurality of pixels, the encapsulation substrate including an inner surface facing the base substrate, a first conductive layer formed over the inner surface and electrically connecting the common power line to a first potential, and a second conductive layer formed over the inner surface and spaced apart from the first conductive layer, the second conductive layer electrically connecting the common electrode to a second potential.
摘要:
A metal-insulator-semiconductor field-effect transistor (MISFET) includes a SiC layer with source and drain regions of a first conductivity type spaced apart therein. A first gate insulation layer is on the SiC layer and has a net charge along an interface with the SiC layer that is the same polarity as majority carriers of the source region. A gate contact is on the first gate insulation layer over a channel region of the SiC layer between the source and drain regions. The net charge along the interface between the first gate insulation layer and the SiC layer may deplete majority carriers from an adjacent portion of the channel region between the source and drain regions in the SiC layer, which may increase the threshold voltage of the MISFET and/or increase the electron mobility therein.
摘要:
Methods and constructs are provided for controlling processes in live animals, plants or microbes via genetically engineered near-infrared light-activated or light-inactivated proteins including chimeras including the photosensory modules of bacteriophytochromes and output modules that possess enzymatic activity and/or ability to bind to DMA, RNA, protein, or small molecules. DNA encoding these proteins are introduced as genes into live animals, plants or microbes, where their activities can be turned on by near-infrared light, controlled by the intensity of light, and turned off by near-infrared light of a different wavelength than the activating light. These proteins can regulate diverse cellular processes with high spatial and temporal precision, in a nontoxic manner, often using external light sources. For example, near-infrared light-activated proteins possessing nucleotidyl cyclase, protein kinase, protease, DNA-binding and RNA-binding activities are useful to control signal transduction, cell apoptosis, proliferation, adhesion, differentiation and other cell processes.
摘要:
An organic light emitting diode display includes a substrate, a display unit that includes a common power line and a common electrode, an encapsulation substrate that is attached to the substrate by an adhering layer enclosing the display unit and includes a resin matrix and a plurality of carbon fiber. The display includes a first conductive portion and a second conductive portion. The first conductive portion is on a first inner surface region, a first side surface region, and a first outer surface region of the encapsulation substrate. The first conductive portion is adapted to supply a first electrical signal to the common power line. The second conductive portion is on a second inner surface region, a second side surface region, and a second outer surface region of the encapsulation substrate. The second conductive portion is adapted to supply a second electrical signal to the common electrode.
摘要:
A power module is disclosed that includes a housing with an interior chamber wherein multiple switch modules are mounted within the interior chamber. The switch modules comprise multiple transistors and diodes that are interconnected to facilitate switching power to a load. In one embodiment, at least one of the switch modules supports a current density of at least 10 amperes per cm2.
摘要:
A method of manufacturing a display device includes providing a display panel including a first alignment mark on one side of opposite facing sides, obtaining location information of the first alignment mark by imaging the one side of the display panel, providing a flexible printed circuit board that includes a second alignment mark and a subsidiary mark on one side of the flexible printed circuit board, the subsidiary mark being spaced apart from the display panel and being spaced a predetermined distance apart from the second alignment mark, aligning the first alignment mark and the second alignment mark by disposing the subsidiary mark to be spaced the predetermined distance apart from the first alignment mark on the basis of the location information of the first alignment mark, and bonding the display panel and the flexible printed circuit board.
摘要:
An electronic device includes a silicon carbide layer having a first conductivity type and having a first surface and a second surface opposite the first surface, and first and second silicon carbide Zener diodes on the silicon carbide layer. Each of the first and second silicon carbide Zener diodes may include a first heavily doped silicon carbide region having a second conductivity type opposite the first conductivity type on the silicon carbide layer, and an ohmic contact on the first heavily doped silicon carbide region.
摘要:
A display device includes a display area having a plurality of data lines, a plurality of first scan lines, a plurality of second and third scan lines, and a plurality of pixel areas. In addition, the display device includes a first driver, a second driver, and a third driver. At least two pixels sharing a data line and a first scan line are formed in at least one of the pixel areas. At least one of the pixels of a first group among the pixels formed in the at least one pixel area is emitted by a first emission signal in a first field, and at least another one of the pixels of a second group are emitted by a second emission signal in a second field.