公开(公告)号：US07797160B2

公开(公告)日：2010-09-14

申请号：US10727338

申请日：2003-12-03

申请人： Akisato Kimura ,  Kunio Kashino ,  Takayuki Kurozumi ,  Hiroshi Murase

发明人： Akisato Kimura ,  Kunio Kashino ,  Takayuki Kurozumi ,  Hiroshi Murase

IPC分类号： G10L19/00

CPC分类号： G06K9/00523 ,  G06K9/62

摘要： There are included: an initial sub-signal creation section which creates, from an original signal, sub-signals of shorter length than the original signal; a created sub-signal selection section which, for the sub-signals produced by the initial sub-signal creation section, prunes the created sub-signal candidates to those for which the amount of data is less than for the original signal; a sub-signal re-creation section which determines a created sub-signal which is actually to be used, using the created sub-signal candidates produced by the created sub-signal selection section; a compression mapping determination section which determines, from the sub-signals produced by the sub-signal re-creation section, a mapping for calculation of a compressed signal; and a signal compression section which calculates a compressed signal corresponding to the sub-signals obtained by the sub-signal re-creation section, based upon the mapping obtained by the compression mapping determination section.

摘要翻译： 包括：初始子信号创建部，其从原始信号创建比原始信号短的子信号; 一个创建的子信号选择部分，对于由初始子信号产生部分产生的子信号，将产生的子信号候选修改为数据量小于原始信号的候选信号; 子信号再生成部，其使用由所生成的子信号选择部生成的所生成的子信号候选来确定实际要使用的创建的子信号; 压缩映射确定部分，从子信号重新创建部分产生的子信号中确定用于计算压缩信号的映射; 以及信号压缩部，其基于由压缩映射确定部获得的映射来计算与由子信号重新创建部获得的子信号相对应的压缩信号。

公开(公告)号：US07777288B2

公开(公告)日：2010-08-17

申请号：US11052215

申请日：2005-02-08

申请人： Naoyoshi Kawahara ,  Hiroshi Murase ,  Hiroaki Ohkubo ,  Kuniko Kikuta ,  Yasutaka Nakashiba ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

发明人： Naoyoshi Kawahara ,  Hiroshi Murase ,  Hiroaki Ohkubo ,  Kuniko Kikuta ,  Yasutaka Nakashiba ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

IPC分类号： H01L31/058

CPC分类号： H01C7/1013 ,  H01L27/16 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a temperature sensor section of a semiconductor integrated circuit device, wires of the topmost wiring layer of a multi-layer wiring structure are formed. A sheet-like temperature monitor element of vanadium oxide is provided between two of the wires in such a way as to cover the two wires. Accordingly, the temperature monitor element is connected between the two wires of an underlying wiring layer of the multi-layer wiring structure through two vias and the two wires of the topmost wiring layer.

摘要翻译： 在半导体集成电路器件的温度传感器部分中，形成多层布线结构的最上层布线层的布线。 在两条电线之间设置氧化钒的片状温度监视元件，以覆盖两条电线。 因此，温度监视元件通过两个通孔和最上面布线层的两条导线连接在多层布线结构的底层布线层的两条导线之间。

公开(公告)号：US07551834B2

公开(公告)日：2009-06-23

申请号：US10971189

申请日：2004-10-22

申请人： Kunio Kashino ,  Hiroshi Murase ,  Gavin Smith

发明人： Kunio Kashino ,  Hiroshi Murase ,  Gavin Smith

IPC分类号： H04N5/91

CPC分类号： H04N7/16 ,  G06K9/00536 ,  G06K9/00758 ,  H04H20/14 ,  H04H60/58 ,  H04N21/4394 ,  H04N21/812

摘要： The object of the present invention is to provide a high-speed signal search method, device, and a recording medium for the same that can obtain detection results equivalent to precisely moving a window over the entire region of the input signal even when there is not precise movement of a window over the entire signal.The present invention provides a first step that generates a feature quantity sequence for a pre-recorded reference signal; a second step that sets the input signal window for the input signal that has been input; a third step that generates a feature quantity sequence for the input signal of this input signal window; a fourth step that calculates the input signal similarity value showing the degree of similarity between the feature quantity sequence generated in the first step and the feature quantity sequence generated in the third step; a fifth step that calculates the skip width showing the amount that the input signal can be moved; and a sixth step that determines the position of the input signal window based on the skip width calculated in the fifth step, sets the input signal window to this position, and calculates the input signal similarity value for each position of the input signal window by repeating the third step to the sixth step; and further, determines whether or not the reference signal exists at the position that the input signal window presently shows in the input signal based on the result of comparing the input signal similarity value and the predetermined threshold value.

摘要翻译： 本发明的目的是提供一种高速信号搜索方法，装置和记录介质，其可以获得等同于在输入信号的整个区域上精确地移动窗口的检测结果，即使不存在 窗口在整个信号上的精确移动。 本发明提供了一种生成预先记录的参考信号的特征量序列的第一步骤; 第二步骤，为输入的输入信号设定输入信号窗口; 第三步骤，产生该输入信号窗口的输入信号的特征量序列; 计算表示在第一步骤中生成的特征量序列与在第三步骤中生成的特征量序列之间的相似度的输入信号相似度值的第四步骤; 计算表示输入信号能够移动的量的跳过宽度的第五步骤; 以及第六步骤，基于在第五步骤中计算的跳跃宽度来确定输入信号窗口的位置，将输入信号窗口设置到该位置，并通过重复来计算输入信号窗口的每个位置的输入信号相似度值 第三步到第六步; 并且还基于比较输入信号相似度值和预定阈值的结果，确定参考信号是否存在于输入信号窗口当前在输入信号中显示的位置。

公开(公告)号：US20070008182A1

公开(公告)日：2007-01-11

申请号：US11448517

申请日：2006-06-07

申请人： Takayuki Miyahara ,  Hiroaki Kumon ,  Hiroshi Murase

发明人： Takayuki Miyahara ,  Hiroaki Kumon ,  Hiroshi Murase

IPC分类号： G08G1/054

CPC分类号： G01S13/867 ,  G06K9/00805

摘要： An image processing device for a vehicle includes a radar for transmitting a radio wave outside of the vehicle and detecting an object in a first area outside of the vehicle by using a reflected wave of the transmitted radio wave; a camera for acquiring an image in a second area including the first area; and an image processing unit for processing the acquired image to detect, in the acquired image, the object detected by the radar. Visibility outside of the vehicle is detected based on result of detection of the radar and result of detection of the camera.

摘要翻译： 一种用于车辆的图像处理装置包括用于在车辆外部发送无线电波的雷达，并且通过使用发射的无线电波的反射波来检测车辆外部的第一区域中的物体; 用于在包括所述第一区域的第二区域中获取图像的相机; 以及图像处理单元，用于处理所获取的图像以在获取的图像中检测由雷达检测到的物体。 根据雷达的检测结果和摄像机的检测结果，可以检测出车外的可视性。

公开(公告)号：US06966934B1

公开(公告)日：2005-11-22

申请号：US09672775

申请日：2000-09-29

申请人： Toshikazu Sato ,  Toshiaki Inohara ,  Hiroshi Murase ,  Hiromi Naotsuka ,  Takahiro Imai

发明人： Toshikazu Sato ,  Toshiaki Inohara ,  Hiroshi Murase ,  Hiromi Naotsuka ,  Takahiro Imai

IPC分类号： H01H33/56 ,  F25J3/06 ,  F25J3/08 ,  B01D39/00 ,  A62B7/08

CPC分类号： B01D53/002 ,  B01D53/04 ,  B01D53/68 ,  B01D2253/108 ,  B01D2253/308 ,  B01D2257/204 ,  B01D2257/55 ,  Y02C20/30

摘要： A gas reclaiming equipment capable of separating SF6 gas from a mixed gas efficiently and shortening reclaiming work under reduced pressure. A gas separation equipment is provided between a gas insulated equipment and a gas liquefaction system. The gas separation equipment separates nitrogen gas from the mixed gas, and concentrates SF6 gas. Only SF6 gas is sent into the gas liquefaction system. The gas separation equipment uses pressure swing adsorption using an adsorbent with selective adsorption. Moreover, a buffer tank for storing mixed gas is provided between the gas separation equipment and the gas insulated equipment. The buffer tank and the gas liquefaction system are connected by a reflux-line. The reflux-line refluxes the gas in a gas phase in the gas liquefaction system to the buffer tank. Furthermore, the gas separation equipment is connected to a storage tank. The storage tank accumulates the nitrogen gas separated with the gas separation equipment. The adsorbent to adsorb SF6 gas is enclosed in the storage tank for exhaust gas. To absorb decomposed gas, the filter has an adsorbent of the chemisorption type. The adsorbent has of a metal hydrate.

摘要翻译： 能够有效地从混合气体中分离SF 6气体的气体回收设备，并且在减压下缩短回收作业。 在气体绝缘设备和气体液化系统之间设置气体分离设备。 气体分离设备将氮气与混合气体分离，并浓缩SF6气体。 只有SF 6气体被送入气体液化系统。 气体分离设备使用具有选择性吸附的吸附剂进行变压吸附。 此外，在气体分离设备和气体绝缘设备之间设置有用于存储混合气体的缓冲罐。 缓冲罐和气体液化系统通过回流管连接。 回流线将气体液化系统中的气相中的气体回流到缓冲罐。 此外，气体分离设备连接到储罐。 储罐积聚与气体分离设备分离的氮气。 用于吸附SF 6气体的吸附剂封闭在用于废气的储罐中。 为了吸收分解气体，过滤器具有化学吸附型吸附剂。 吸附剂具有金属水合物。

公开(公告)号：US20050161822A1

公开(公告)日：2005-07-28

申请号：US11038094

申请日：2005-01-21

申请人： Hiroaki Ohkubo ,  Kuniko Kikuta ,  Yasutaka Nakashiba ,  Naoyoshi Kawahara ,  Hiroshi Murase ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

发明人： Hiroaki Ohkubo ,  Kuniko Kikuta ,  Yasutaka Nakashiba ,  Naoyoshi Kawahara ,  Hiroshi Murase ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

IPC分类号： G01K1/14 ,  G01K7/00 ,  G01K7/01 ,  H01L21/4763 ,  H01L21/822 ,  H01L23/00 ,  H01L23/34 ,  H01L23/48 ,  H01L23/522 ,  H01L27/02 ,  H01L27/04 ,  H01L27/06 ,  H01L37/00

CPC分类号： H01L23/34 ,  G01K7/015 ,  H01L23/522 ,  H01L27/0248 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a temperature sensor section of a semiconductor integrated circuit device, first vias of tungsten are formed at the topmost layer of a multi-layer wiring layer and pads of titanium are provided on regions of the multi-layer wiring layer which covers the vias. An insulating layer is provided in such a way as to cover the multi-layer wiring layer and the pads, second vias are so formed as to reach the pads. Vanadium oxide is buried in the second vias by reactive sputtering, and a temperature monitor part of vanadium oxide is provided in such a way as to connect the second vias each other. Accordingly, the temperature monitor part is connected between the two wires.

摘要翻译： 在半导体集成电路器件的温度传感器部分中，在多层布线层的最上层形成钨的第一通孔，并且在覆盖通孔的多层布线层的区域上设置钛焊盘。 以覆盖多层布线层和焊盘的方式设置绝缘层，第二通孔形成为到达焊盘。 通过反应性溅射将氧化钒埋在第二通孔中，并且以使得第二通孔彼此连接的方式提供氧化钒的温度监视部分。 因此，温度监视器部分连接在两条线之间。

公开(公告)号：US06826350B1

公开(公告)日：2004-11-30

申请号：US09304337

申请日：1999-05-04

申请人： Kunio Kashino ,  Hiroshi Murase ,  Gavin Smith

发明人： Kunio Kashino ,  Hiroshi Murase ,  Gavin Smith

IPC分类号： H04N591

CPC分类号： H04N7/16 ,  G06K9/00536 ,  G06K9/00758 ,  H04H20/14 ,  H04H60/58 ,  H04N21/4394 ,  H04N21/812

摘要： The object of the present invention is to provide a high-speed signal search method, device, and a recording medium for the same that can obtain detection results equivalent to precisely moving a window over the entire region of the input signal even when there is not precise movement of a window over the entire signal. The present invention provides a first step that generates a feature quantity sequence for a pre-recorded reference signal; a second step that sets the input signal window for the input signal that has been input; a third step that generates a feature quantity sequence for the input signal of this input signal window; a fourth step that calculates the input signal similarity value showing the degree of similarity between the feature quantity sequence generated in the first step and the feature quantity sequence generated in the third step; a fifth step that calculates the skip width showing the amount that the input signal can be moved; and a sixth step that determines the position of the input signal window based on the skip width calculated in the fifth step, sets the input signal window to this position, and calculates the input signal similarity value for each position of the input signal window by repeating the third step to the sixth step; and further, determines whether or not the reference signal exists at the position that the input signal window presently shows in the input signal based on the result of comparing the input signal similarity value and the predetermined threshold value.

摘要翻译： 本发明的目的是提供一种高速信号搜索方法，装置和记录介质，其可以获得等同于在输入信号的整个区域上精确地移动窗口的检测结果，即使不存在 窗口在整个信号上的精确移动。本发明提供了一种生成预先记录的参考信号的特征量序列的第一步骤。 第二步骤，为输入的输入信号设定输入信号窗口; 第三步骤，产生该输入信号窗口的输入信号的特征量序列; 计算表示在第一步骤中生成的特征量序列与在第三步骤中生成的特征量序列之间的相似度的输入信号相似度值的第四步骤; 计算表示输入信号能够移动的量的跳过宽度的第五步骤; 以及第六步骤，基于在第五步骤中计算的跳跃宽度来确定输入信号窗口的位置，将输入信号窗口设置到该位置，并通过重复来计算输入信号窗口的每个位置的输入信号相似度值 第三步到第六步; 并且还基于比较输入信号相似度值和预定阈值的结果，确定参考信号是否存在于输入信号窗口当前在输入信号中显示的位置。

公开(公告)号：US06630409B2

公开(公告)日：2003-10-07

申请号：US09817061

申请日：2001-03-27

申请人： Hiroshi Murase

发明人： Hiroshi Murase

IPC分类号： H01L2100

CPC分类号： H01L21/76838 ,  H01L29/41708

摘要： A method of forming an emitter electrode of a bipolar transistor. The emitter electrode includes a double-layered structure of a polysilicon layer and a refractory metal silicide layer. The method includes the steps of removing a natural oxide film from a surface of a polysilicon layer by a sputter-etching process using inert gas ions in the range of acceleration energy from 5 eV to 50 eV; depositing a refractory metal layer on the surface of the polysilicon layer; and carrying out a heat treatment to cause a silicidation reaction to form a refractory metal silicide layer over the polysilicon layer.

摘要翻译： 一种形成双极晶体管的发射极的方法。 发射电极包括多晶硅层和难熔金属硅化物层的双层结构。 该方法包括以下步骤：通过使用惰性气体离子在5eV至50eV的加速能量范围内的溅射蚀刻工艺从多晶硅层的表面除去天然氧化物膜; 在所述多晶硅层的表面上沉积难熔金属层; 并进行热处理以使硅化反应在多晶硅层上形成难熔金属硅化物层。

公开(公告)号：US5575886A

公开(公告)日：1996-11-19

申请号：US503088

申请日：1995-07-17

申请人： Hiroshi Murase

发明人： Hiroshi Murase

IPC分类号： C23C16/50 ,  B24B37/04 ,  C23C16/511 ,  H01L21/304 ,  H01L21/306 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768 ,  H01L21/00

CPC分类号： B24B37/042 ,  H01L21/31053 ,  H01L21/76819 ,  Y10S438/98

摘要： The method for fabricating a semiconductor device disclosed is one in which an insulation film is formed on a metal interconnect by an Electron Cyclotron Resonance Chemical Vapor Deposition (ECR CVD) process capable of applying a radio frequency bias to a substrate, a surface of the insulation film is planarized by a chemical-mechanical polishing (CMP) process, and a surface of the insulation film is cleaned. The ECR CVD process capable of applying a radio frequency bias to a substrate may be a radio frequency bias plasma CVD process or a bias sputtering process. The cleaning of the surface of the insulation film may use a hydrogen fluoride solution. It is easy to control processes without increasing the number of process steps and a high degree of planarization can be realized.

摘要翻译： 所公开的制造半导体器件的方法是其中通过能够对衬底施加射频偏压的电子回旋加速度共振化学气相沉积（ECR CVD）工艺在金属互连上形成绝缘膜，绝缘层的表面 通过化学机械抛光（CMP）工艺将膜平坦化，并且清洁绝缘膜的表面。 能够对基板施加射频偏压的ECR CVD工艺可以是射频偏置等离子体CVD工艺或偏压溅射工艺。 绝缘膜的表面的清洁可以使用氟化氢溶液。 在不增加处理步骤的数量的情况下容易地控制处理，并且可以实现高度的平坦化。

公开(公告)号：US5502007A

公开(公告)日：1996-03-26

申请号：US283295

申请日：1994-07-28

申请人： Hiroshi Murase

发明人： Hiroshi Murase

IPC分类号： H01L21/316 ,  H01L21/3105 ,  H01L21/318 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L21/302 ,  H01L21/463

CPC分类号： H01L21/76819 ,  H01L21/31053

摘要： A method of forming a flat surface of an insulator film of a semiconductor device, providing no excessive polishing, polishing waste that is easily removed and an extensive flat surface of the insulator film. A first wiring film is formed on or over a semiconductor substrate and a first insulator film is formed on the first wiring film. The first insulator film and the first wiring film are patterned to a given shape in the same patterning process. A second insulator film is formed on the first insulator film thus patterned. The second insulator film is relatively higher in polishing rate than the first insulator film. Then, a surface of the second insulator film is polished to be flattened under pressure until the first insulator film is exposed. As the first and second insulator films, a silicon nitride film and a silicon dioxide film are preferably used, respectively.

摘要翻译： 一种形成半导体器件的绝缘膜的平坦表面的方法，其不提供过度的抛光，抛光容易除去的废物和绝缘膜的广泛的平坦表面。 第一布线膜形成在半导体衬底上或上方，并且第一绝缘膜形成在第一布线膜上。 第一绝缘膜和第一布线膜在相同的图案化工艺中被图案化成给定的形状。 在如此构图的第一绝缘膜上形成第二绝缘膜。 第二绝缘膜的抛光速度比第一绝缘膜高。 然后，第二绝缘膜的表面被抛光以在压力下变平，直到第一绝缘膜露出。 作为第一和第二绝缘膜，优选分别使用氮化硅膜和二氧化硅膜。