发明授权
- 专利标题： Integrated circuit device and fabrication method therefor
- 专利标题（中）： 集成电路器件及其制造方法
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申请号： US11052215申请日： 2005-02-08
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公开(公告)号： US07777288B2公开(公告)日： 2010-08-17
- 发明人: Naoyoshi Kawahara , Hiroshi Murase , Hiroaki Ohkubo , Kuniko Kikuta , Yasutaka Nakashiba , Naoki Oda , Tokuhito Sasaki , Nobukazu Ito
- 申请人： Naoyoshi Kawahara , Hiroshi Murase , Hiroaki Ohkubo , Kuniko Kikuta , Yasutaka Nakashiba , Naoki Oda , Tokuhito Sasaki , Nobukazu Ito
- 申请人地址： JP Kawasaki, Kanagawa JP Tokyo
- 专利权人： NEC Electronics Corporation,NEC Corporation
- 当前专利权人： NEC Electronics Corporation,NEC Corporation
- 当前专利权人地址： JP Kawasaki, Kanagawa JP Tokyo
- 代理机构： McGinn IP Law Group PLLC
- 优先权： JP2004-032660 20040209
- 主分类号： H01L31/058
- IPC分类号： H01L31/058
摘要：
In a temperature sensor section of a semiconductor integrated circuit device, wires of the topmost wiring layer of a multi-layer wiring structure are formed. A sheet-like temperature monitor element of vanadium oxide is provided between two of the wires in such a way as to cover the two wires. Accordingly, the temperature monitor element is connected between the two wires of an underlying wiring layer of the multi-layer wiring structure through two vias and the two wires of the topmost wiring layer.
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