公开(公告)号：US4610748A

公开(公告)日：1986-09-09

申请号：US679898

申请日：1984-12-10

申请人： George M. Engle ,  Richard S. Rosler

发明人： George M. Engle ,  Richard S. Rosler

IPC分类号： H01L21/205 ,  B05C13/02 ,  H01L21/285 ,  H01L21/31 ,  H01L21/673 ,  B44C1/22 ,  B05B5/02 ,  C23C14/00 ,  C23F1/00

CPC分类号： H01L21/67313 ,  B05C13/02 ,  H01L21/67316

摘要： A disk boat assembly for holding workpieces to be processed within a chemical reaction processing apparatus during the chemical vapor process. The boat assembly includes a pair of electrically conductive rail members held rigidly and radially apart between two dielectric end holding members that electrically isolate the two rail members. A plurality of disk like plates are connected respectively to the two rail members and are interleaved such that adjacent disk plates are electrically isolated. Each disk plate includes pairs of bores formed therein with each pair extending radially outward from the center of the disk. Insertable pins are placed in a respective pair of bores, the distance therebetween of which can be extended by insertion in an additional pair of bores lying further from the center of the disk so that variable diameter workpieces can be held on the broad surfaces of each disk plate.

摘要翻译： 一种用于在化学气相处理期间保持在化学反应处理装置内处理的工件的盘式船组件。 船组件包括一对导电轨道构件，其牢固且径向地保持在两个绝缘端部保持构件之间，两个电介质端部保持构件将两个轨道构件电隔离。 多个盘状板分别连接到两个轨道构件并被交错，使得相邻的盘片电隔离。 每个盘片包括成对的孔，每对孔从盘的中心径向向外延伸。 可插入的销被放置在相应的一对孔中，它们之间的距离可以通过插入在距离盘的中心更远的另外一对孔中而延伸，使得可变径的工件可以保持在每个盘的宽表面上 盘子。

公开(公告)号：US08731383B2

公开(公告)日：2014-05-20

申请号：US13466726

申请日：2012-05-08

申请人： George M. Engle

发明人： George M. Engle

IPC分类号： A01G13/06

CPC分类号： C23C16/4485 ,  Y10T137/0318 ,  Y10T137/6416

摘要： A method and system for delivering iodine gas is presented. The pure iodine gas flow can be at a controlled, known flow rate, and furthermore be held at a positive pressure in relation to a process chamber. In an exemplary embodiment, pure iodine gas is transported without the use of an inert carrier gas. This is facilitated in part by maintaining the iodine gas chamber at a higher pressure than the processing chamber.In one exemplary embodiment, an iodine vessel receives solid iodine supplied by an iodine fill source and is heated to produce pure iodine gas. In addition, a control system monitors and controls the operating conditions in the iodine vessel and maintains a positive pressure in the iodine vessel. The iodine delivery system may include a valve system configured to control the flow of iodine gas through the iodine delivery system and into a process chamber.

摘要翻译： 提出了一种用于输送碘气的方法和系统。 纯碘气流可以是受控的已知流速，并且进一步相对于处理室保持在正压力。 在一个示例性实施方案中，纯碘气被输送而不使用惰性载气。 这部分地通过将碘气室保持在比处理室更高的压力来促进。 在一个示例性实施方案中，碘容器接收由碘填充源供应的固体碘，并加热以产生纯碘气体。 此外，控制系统监测和控制碘容器中的操作条件并在碘容器中保持正压。 碘输送系统可以包括阀系统，该阀系统被配置为控制通过碘输送系统的碘气流并进入处理室。

公开(公告)号：US4401687A

公开(公告)日：1983-08-30

申请号：US320451

申请日：1981-11-12

申请人： Richard S. Rosler ,  George M. Engle

发明人： Richard S. Rosler ,  George M. Engle

IPC分类号： C01B33/02 ,  C01B33/03 ,  C23C16/24 ,  C30B25/02 ,  H01L21/205 ,  B05D5/12

CPC分类号： C30B29/06 ,  C23C16/24 ,  C30B25/02

摘要： Method for plasma deposition of silicon from a silicon source gas. By inclusion of a halogen species in the gas flow stream, thermally induced deposition is inhibited so that plasma decomposition predominates. The silicon gas source may comprise the halogen species, which may alternatively be under separate control. The suppression of thermally induced deposition leads to improved thickness uniformity across the workpieces for significantly increased lifetime or runtime without the conductive plates shorting together.

摘要翻译： 从硅源气体等离子体沉积硅的方法。 通过在气流中包含卤素物质，抑制热诱导沉积，使得等离子体分解占优势。 硅气体源可以包括卤素物质，其可以替代地在单独的控制下。 热诱导沉积的抑制导致改善整个工件的厚度均匀性，从而显着增加寿命或运行时间，而导电板一起短路。

公开(公告)号：US4557943A

公开(公告)日：1985-12-10

申请号：US547050

申请日：1983-10-31

申请人： Richard S. Rosler ,  George M. Engle

发明人： Richard S. Rosler ,  George M. Engle

IPC分类号： C23C16/02 ,  C23C16/42 ,  C23C16/50 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285 ,  B05D3/06

CPC分类号： C23C16/42 ,  H01L21/28061 ,  H01L21/28518

摘要： A method for deposition of thin conductive layers of low resistivity titanium silicide. The method comprises the co-deposition of titanium and silicon by plasma-enhanced chemical vapor deposition at a low temperature. An anneal above the deposition temperature reduces the layer resistivity, making the layer especially suitable for microelectronic applications.

摘要翻译： 一种用于沉积低电阻率硅化钛的薄导电层的方法。 该方法包括通过等离子体增强化学气相沉积在低温下共同沉积钛和硅。 在沉积温度之上的退火降低了层电阻率，使得该层特别适用于微电子应用。

公开(公告)号：US4491606A

公开(公告)日：1985-01-01

申请号：US492545

申请日：1983-05-09

申请人： Richard S. Rosler ,  George M. Engle

发明人： Richard S. Rosler ,  George M. Engle

IPC分类号： C23C16/509 ,  H01J37/32 ,  C23C13/08 ,  C23C13/04

CPC分类号： H01J37/32568 ,  C23C16/509 ,  H01J37/32 ,  H01J2237/3321

摘要： An improved spacer means for separating and inhibiting the shorting together of conductive plates in an RF plasma reactor used in Plasma Enhanced Chemical Vapor Deposition (PECVD) processing of semiconductor devices. The improved spacer means inhibits the accumulation of conductive films on the surface of the separating means by substantially precluding the plasma field, and hence, inhibiting depositions in areas where recessed grooves are in the surface of the separating means. Accordingly, a direct electrical path on the spacer means between the multiple conductive plates of the RF plasma reactor is inhibited. As a result, the reactors can run for longer periods of time and deposit greater thicknesses of conductive films without the conductive plates shorting together causing shutdown of the process.

摘要翻译： 用于在用于半导体器件的等离子体增强化学气相沉积（PECVD）处理中的RF等离子体反应器中分离和抑制导电板的短路的改进的隔离装置。 改进的间隔装置通过基本上排除等离子体场，从而抑制在分离装置的表面上的导电膜的积累，并因此抑制在分离装置的表面中的凹槽的区域中的沉积。 因此，RF等离子体反应器的多个导电板之间的隔离件装置上的直接电路被禁止。 因此，反应器可以运行更长的时间，并且沉积更大厚度的导电膜，而不会导致导电板短路在一起导致该过程的关闭。

公开(公告)号：US4401507A

公开(公告)日：1983-08-30

申请号：US398066

申请日：1982-07-14

申请人： George M. Engle

发明人： George M. Engle

IPC分类号： H01L21/205 ,  B01J12/00 ,  B01J19/08 ,  C23C16/509 ,  C30B25/10 ,  C30B33/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  B05D3/06 ,  B05B5/02 ,  B44C1/22 ,  C03C15/00

CPC分类号： H01J37/32 ,  B01J12/002 ,  B01J19/087 ,  C23C16/509 ,  C30B25/105 ,  C30B33/005 ,  B01J2219/0894

摘要： Method and apparatus for improved uniformity in an externally excited non-thermal chemical reaction process. In the inventive process, the reactant is externally activated for a time short compared with the time during which reactant depletion would otherwise occur. The reactant is then deactivated for a period of time comparable to the transit time across the workload. In this way improved uniformity is obtained by reducing the depletion of the reactant as it flows across the workload.

摘要翻译： 用于改善外部激发的非热化学反应过程的均匀性的方法和装置。 在本发明的方法中，与反过来消耗否则会发生的时间相比，反应物被外部活化一段时间。 然后将反应物停用一段时间，与跨工作负载的运输时间相当。 以这种方式，通过减少反应物流过工作负荷时的耗尽来获得改进的均匀性。

公开(公告)号：US4223048A

公开(公告)日：1980-09-16

申请号：US931565

申请日：1978-08-07

申请人： George M. Engle, Jr.

发明人： George M. Engle, Jr.

IPC分类号： B65G49/07 ,  C23C16/509 ,  H01J37/32 ,  H01L21/00 ,  C23C13/12 ,  B05D5/12 ,  H01L21/443

CPC分类号： H01L21/67069 ,  C23C16/509 ,  H01J37/32431

摘要： Semiconductive wafers are processed, i.e., etched or layers deposited thereon, by means of a plasma enhanced chemical vapor processing system. The processing system includes an evacuable horizontal tubular envelope disposed within a surrounding heater or furnace for maintaining, the case of deposition, a region of uniform temperature within the central region of the elongated tubular envelope. Two sets of interleaved generally planar electrodes are disposed within the evacuable envelope for establishing an electrical plasma discharge in the process gaps defined between the interleaved electrodes. Wafers are loaded into the processing gaps vertically with the major face of each wafer facing into the process gap. The mutually opposed surfaces of the interleaved electrodes are preferably lined with a material of the same conductivity as that of the bulk material of the wafer to enhance the uniformity of the processing. The chemical vapor is caused to flow axially through the evacuable tube, and through the electrical plasma discharge established in the processing gaps at subatmospheric pressure, to produce chemically active vapor products of the plasma discharge which interact with the faces of the wafers facing into the processing gaps for processing of the wafers.

摘要翻译： 通过等离子体增强化学气相处理系统处理半导体晶片，即蚀刻或沉积在其上的层。 处理系统包括设置在周围加热器或炉内的可抽空的水平管状容器，用于在细长的管状外壳的中心区域内保持均匀温度的区域。 两组交错的大体上平面的电极设置在可抽真空的外壳内，用于在交错的电极间限定的工艺间隙内建立电等离子体放电。 将晶片垂直地装载到处理间隙中，每个晶片的主面面向工艺间隙。 交错电极的相互相对的表面优选地衬有与晶片的散装材料相同导电性的材料，以增强处理的均匀性。 导致化学气体轴向流过可抽空的管，并通过在低于大气压的处理间隙中建立的电离子放电，以产生等离子体放电的化学活性蒸气产物，其与面向加工的晶片的面相互作用 用于处理晶片的间隙。

公开(公告)号：US08061299B2

公开(公告)日：2011-11-22

申请号：US11059981

申请日：2005-02-17

申请人： George M. Engle

发明人： George M. Engle

IPC分类号： C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  C23C16/52 ,  H01L21/306 ,  C23F1/00 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C14/0623 ,  C23C14/34 ,  C23C14/3464 ,  C23C16/4485 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/34

摘要： A deposition system includes a vacuum reaction chamber with a substrate holder positioned in it. The substrate holder is for carrying a substrate therein. A sputtering apparatus is also positioned in the vacuum reaction chamber. The sputtering apparatus is configured to direct sputtered material towards the substrate to form a sputtered material region thereon. A plasma enhanced chemical vapor deposition (PECVD) apparatus is positioned in the vacuum reaction chamber. The PECVD apparatus is configured to deposit a PECVD material region thereon the substrate. The first PECVD apparatus includes a first PECVD electrode movable from a first position towards the substrate and a second position away from the substrate.

摘要翻译： 沉积系统包括具有定位在其中的基板保持架的真空反应室。 衬底保持器用于在其中承载衬底。 溅射装置也位于真空反应室中。 溅射装置被配置为将溅射的材料引向衬底以在其上形成溅射材料区域。 等离子体增强化学气相沉积（PECVD）装置位于真空反应室中。 PECVD装置被配置为在其上沉积PECVD材料区域。 第一PECVD装置包括可从第一位置朝向衬底移动的第一PECVD电极和远离衬底的第二位置。

公开(公告)号：US4873942A

公开(公告)日：1989-10-17

申请号：US204210

申请日：1988-06-08

申请人： George M. Engle

发明人： George M. Engle

IPC分类号： C23C16/50 ,  C23C16/458 ,  C23C16/509 ,  H01L21/205 ,  H01L21/22 ,  H01L21/31

CPC分类号： C23C16/4587 ,  C23C16/509

摘要： A holding fixture for plasma enhanced chemical vapor deposition processing of semiconductor wafers comprising a frame boat assembly for holding disk-shape semiconductor wafer workpieces to be subjected to a flow of reactant gases serially across the workpieces in a direction perpendicular to the broad faces of the workpieces. The boat holding fixture comprises a pair of upright, spaced-apart insulating frame end members having a first set of spaced-apart parallel, elongated insulating rods secured between the end members for holding the boat in assembled relation. An electrode supporting rack is secured within the boat for holding a plurality of flat, spaced-apart, electrically conductive electrodes in an upright position with the flat surfaces parallel to each other and perpendicular to the longitudinal axis of the boat. A workpiece holding rack comprised by at least two spaced-apart, parallel, insulating, workpiece support, elongated rods is provided with each workpiece support rod being seated in longitudinally aligned apertures formed on lower opposite sides of the periphery of the array of flat, spaced-apart parallel electrically conductive electrodes for holding the workpieces suspended directly from the electrodes flat against the opposite flat surfaces of the respective electrodes. The holding fixture is completed by means for applying an electric potential difference between alternate ones of the array of spaced-apart parallel electrodes.

摘要翻译： 一种用于半导体晶片等离子体增强化学气相沉积处理的保持夹具，包括框架船组件，用于保持圆盘状半导体晶片工件在垂直于工件宽面的方向上串联地跨过工件进行反应气体的流动 。 船用夹具包括一对直立隔开的绝缘框架端构件，其具有固定在端部构件之间的第一组间隔开的平行的细长绝缘杆，用于将船保持在组装关系中。 电极支撑架固定在船内，用于将直立的多个平坦的间隔开的导电电极保持在平坦的表面上，并且垂直于船的纵向轴线。 设置有由至少两个间隔开的平行绝缘的工件支撑细长杆构成的工件保持架，每个工件支撑杆被安置在纵向对准的孔中，所述孔形成在平坦阵列的周边的相对侧的相对侧上， 平行导电电极，用于将直接从电极悬挂的工件平放在相应电极的相对平坦表面上。 保持夹具通过用于在间隔开的平行电极阵列中的交替的间隔施加电位差的装置来完成。