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    P-I-N PHOTODETECTOR
    1.
    发明申请
    P-I-N PHOTODETECTOR 有权

    公开(公告)号：US20220102570A1

    公开(公告)日：2022-03-31

    申请号：US17298359

    申请日：2019-11-28

    Applicant: EMBERION OY

    Inventor： Alexander BESSONOV ,  Mark ALLEN

    IPC: H01L31/105 ,  H01L31/0224

    Abstract: A photodetector which comprises a measurement layer (15) and at least a first photoactive layer (11) which covers the measurement layer (15). The measurement layer (15) may be a transistor channel or a charge accumulation electrode. The conductivity type of the measurement layer is n-type, p-type or ambipolar and the first photoactive layer (11) exhibits intrinsic semiconductivity.

    SENSOR APPARATUS AND ASSOCIATED METHODS
    3.
    发明申请
    SENSOR APPARATUS AND ASSOCIATED METHODS 审中-公开

    公开(公告)号：US20200292489A1

    公开(公告)日：2020-09-17

    申请号：US15779567

    申请日：2016-11-30

    Applicant: EMBERION OY

    Inventor： Samiul HAQUE ,  Alan COLLI

    IPC: G01N27/414

    Abstract: An apparatus comprising a pyroelectric layer, a two dimensional conductive channel and a floating gate. The pyroelectric layer is capacitively configured with respect to each of the two dimensional conductive channel and the floating gate. The floating gate comprises electrically connected first and second portions, the first portion is in thermal proximity to the first portion of the pyroelectric layer. The second portion is configured to overlie and gate flow of electrical charge through the two dimensional conductive channel by charge in the second portion of the floating gate. The first portion is functionalised to detect one or more proximal specific species. Such detection gives rise to heat flow to or from the thermally proximal pyroelectric layer to allow the pyroelectric layer to generate an electrical signal dependent upon one or more of the presence and amount of the specific detected species.

    SURFACE MESFET
    4.
    发明申请
    SURFACE MESFET 审中-公开

    公开(公告)号：US20190288123A1

    公开(公告)日：2019-09-19

    申请号：US16353548

    申请日：2019-03-14

    Applicant: EMBERION OY

    Inventor： Sami KALLIOINEN ,  Helena POHJONEN

    IPC: H01L29/812 ,  H01L23/528 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/10 ,  H01L27/095 ,  H01L27/146 ,  H01L29/66 ,  H01L29/40

    Abstract: A MESFET transistor on a horizontal substrate surface with at least one wiring layer on the substrate surface. The transistor comprises source, drain and gate electrodes which are at least partly covered by a semiconducting channel layer. The source, drain and gate electrodes optionally comprise interface contact materials for changing the junction type between each electrode and the channel. The interface between the source electrode and the channel is an ohmic junction, the interface between the drain electrode and the channel is an ohmic junction, and the interface between the gate electrode and the channel is a Schottky junction. The substrate is a CMOS substrate.

    Photosensitive field-effect transistor
    8.
    发明授权
    Photosensitive field-effect transistor 有权

    公开(公告)号：US11177411B2

    公开(公告)日：2021-11-16

    申请号：US16758736

    申请日：2018-10-23

    Applicant: EMBERION OY

    Inventor： Sami Kallioinen ,  Martti Voutilainen

    IPC: H01L31/113 ,  H01L29/06 ,  H01L29/16 ,  H01L31/0352 ,  H01L51/42

    Abstract: A photosensitive field-effect transistor comprising a substrate with a source electrode, a drain electrode and a gate electrode. The transistor comprises a photoactive layer which at least partly covers the gate electrode, and a channel layer which covers the photoactive layer and at least partly covers both the source electrode and the drain electrode. The channel layer comprises a two-dimensional material whose conductivity is modulated by charge carriers transferred from the photoactive layer when electromagnetic radiation is absorbed in the photoactive layer.

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