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1.发明申请公开(公告)号：US20110170569A1
公开(公告)日：2011-07-14
申请号：US12908478
申请日：2010-10-20
申请人： Anurag Tyagi , Robert M. Farrell , Chia-Yen Huang , Po Shan Hsu , Daniel A. Haeger , Kathryn M. Kelchner , Hiroaki Ohta , Shuji Nakamura , Steven P. DenBaars , James S. Speck
发明人： Anurag Tyagi , Robert M. Farrell , Chia-Yen Huang , Po Shan Hsu , Daniel A. Haeger , Kathryn M. Kelchner , Hiroaki Ohta , Shuji Nakamura , Steven P. DenBaars , James S. Speck
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01S5/0014 , H01S5/06216 , H01S5/2009 , H01S5/3202 , H01S5/3211
摘要： A semipolar {20-21} III-nitride based laser diode employing a cavity with one or more etched facet mirrors. The etched facet mirrors provide an ability to arbitrarily control the orientation and dimensions of the cavity or stripe of the laser diode, thereby enabling control of electrical and optical properties of the laser diode.
摘要翻译： 采用具有一个或多个蚀刻小面镜的空腔的半极性{20-21} III族氮化物基激光二极管。 蚀刻刻面镜提供了任意控制激光二极管的空腔或条纹的取向和尺寸的能力，从而能够控制激光二极管的电学和光学性质。
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2.发明申请STRUCTURE AND METHOD FOR ACHIEVING SELECTIVE ETCHING IN (Ga,Al,In,B)N LASER DIODES 审中-公开（Ga，Al，In，B）N激光二极管中的选择性蚀刻的结构和方法公开(公告)号：US20110044364A1
公开(公告)日：2011-02-24
申请号：US12859661
申请日：2010-08-19
申请人： Robert M. Farrell , Daniel A. Haeger , Po Shan Hsu , Umesh K. Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Robert M. Farrell , Daniel A. Haeger , Po Shan Hsu , Umesh K. Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01S5/028 , H01L21/306
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/2009 , H01S5/209 , H01S5/22 , H01S5/3063 , H01S5/3213
摘要： A structure and method that can be used to achieve selective etching in (Ga, Al, In, B) N laser diodes, comprising fabricating (Ga, Al, In, B) N laser diodes with one or more Al-containing etch stop layers.
摘要翻译： 可用于实现（Ga，Al，In，B）N激光二极管中的选择性蚀刻的结构和方法，包括用一个或多个含Al蚀刻停止层制造（Ga，Al，In，B）N激光二极管 。
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3.发明申请SEMI-POLAR III-NITRIDE OPTOELECTRONIC DEVICES ON M-PLANE SUBSTRATES WITH MISCUTS LESS THAN +/-15 DEGREES IN THE C-DIRECTION 有权M-PLANE基板上的半极性III型氮化物光电器件，C型方向的误差小于+/- 15度公开(公告)号：US20110216795A1
公开(公告)日：2011-09-08
申请号：US13041120
申请日：2011-03-04
申请人： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , S. James Speck
发明人： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , S. James Speck
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L31/03044 , H01L31/036 , H01L31/0735 , H01L33/0025 , H01L33/0045 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/0014 , H01S5/2009 , H01S5/2031 , H01S5/22 , H01S5/3063 , H01S5/3202 , H01S5/3404 , H01S2304/04
摘要： An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15
摘要翻译： 在杂交GaN上生长的光电子器件，其中杂交包括GaN的半极性GaN晶体平面（从GaN的m面）和GaN的c方向偏离x度，其中-15
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4.发明授权Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/-15 degrees in the C-direction 有权半平面III族氮化物光电子器件在M面平面衬底上，在C方向上具有小于+/- 15度的倾斜度公开(公告)号：US09077151B2
公开(公告)日：2015-07-07
申请号：US13041120
申请日：2011-03-04
申请人： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , S. James Speck
发明人： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , S. James Speck
IPC分类号： H01S5/00 , H01S5/32 , B82Y20/00 , H01L21/02 , H01S5/343 , H01S5/20 , H01S5/22 , H01S5/30 , H01S5/34
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L31/03044 , H01L31/036 , H01L31/0735 , H01L33/0025 , H01L33/0045 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/0014 , H01S5/2009 , H01S5/2031 , H01S5/22 , H01S5/3063 , H01S5/3202 , H01S5/3404 , H01S2304/04
摘要： An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15
摘要翻译： 在杂交GaN上生长的光电子器件，其中杂交包括GaN的半极性GaN晶体平面（从GaN的m面）和GaN的c方向偏离x度，其中-15
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