Invention Application
US20110216795A1 SEMI-POLAR III-NITRIDE OPTOELECTRONIC DEVICES ON M-PLANE SUBSTRATES WITH MISCUTS LESS THAN +/-15 DEGREES IN THE C-DIRECTION
有权
M-PLANE基板上的半极性III型氮化物光电器件，C型方向的误差小于+/- 15度
- Patent Title: SEMI-POLAR III-NITRIDE OPTOELECTRONIC DEVICES ON M-PLANE SUBSTRATES WITH MISCUTS LESS THAN +/-15 DEGREES IN THE C-DIRECTION
- Patent Title (中): M-PLANE基板上的半极性III型氮化物光电器件，C型方向的误差小于+/- 15度
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Application No.: US13041120Application Date: 2011-03-04
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Publication No.: US20110216795A1Publication Date: 2011-09-08
- Inventor: Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , S. James Speck
- Applicant: Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , S. James Speck
- Applicant Address: US CA Oakland
- Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee Address: US CA Oakland
- Main IPC: H01S5/343
- IPC: H01S5/343 ; H01L33/06 ; H01L33/18
Abstract:
An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15
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