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    High-bandwidth reconfigurable data acquisition card
    8.
    发明授权
    High-bandwidth reconfigurable data acquisition card 有权

    公开(公告)号：US11816053B2

    公开(公告)日：2023-11-14

    申请号：US17428810

    申请日：2019-09-23

    申请人： Brookhaven Science Associates, LLC

    发明人： Kai Chen ,  Michael Begel ,  Hucheng Chen ,  Francesco Lanni

    IPC分类号： G06F13/40 ,  H03K19/14 ,  H04B10/40 ,  H04J3/06

    CPC分类号： G06F13/4022 ,  H03K19/14 ,  H04B10/40 ,  H04J3/0685

    摘要： A reconfigurable data acquisition card including at least one field programmable gate array (FPGA) and a configurable bus switch coupled with the FPGA. The bus switch forms at least first and second ports used by the FPGA, the bus switch being adaptable for insertion into a connection having a number of lanes at least equal to a combined number of lanes in the first and second ports. The data acquisition card further includes multiple optical transmitters and optical receivers. Each optical transmitter and optical receiver is coupled with a corresponding transceiver in the FPGA via at least one optical fiber having multiple communication links. Timing circuitry in the data acquisition card is coupled with clock generation and distribution circuitry in the FPGA and is configured to distribute clock and timing signals to detector front-ends with fixed latency and to synchronize input/output links with a system clock generated by the FPGA.

    FORMATION OF ANTIREFLECTIVE SURFACES
    9.
    发明申请
    FORMATION OF ANTIREFLECTIVE SURFACES 有权

    公开(公告)号：US20220402754A1

    公开(公告)日：2022-12-22

    申请号：US17858855

    申请日：2022-07-06

    申请人： Brookhaven Science Associates LLC

    发明人： Charles T. Black ,  Atikur Rahman ,  Matthew Eisaman ,  Ahsan Ashraf

    IPC分类号： B81C1/00 ,  B82Y30/00 ,  H01L31/0236 ,  G02B1/118 ,  G03F7/00 ,  G03F7/40 ,  H01L21/027 ,  H01L21/033 ,  H01L21/3065 ,  H01L21/308

    摘要： Methods for etching nanostructures in a substrate include depositing a patterned block copolymer on the substrate, the patterned block copolymer including first and second polymer block domains, applying a precursor to the patterned block copolymer to generate an infiltrated block copolymer, the precursor infiltrating into the first polymer block domain and generating a material in the first polymer block domain, applying a removal agent to the infiltrated block copolymer to generate a patterned material, the removal agent removing the first and second polymer block domains from the substrate, and etching the substrate, the patterned material on the substrate masking the substrate to pattern the etching. The etching may be performed under conditions to produce nanostructures in the substrate.