公开(公告)号：US08723300B2

公开(公告)日：2014-05-13

申请号：US13584015

申请日：2012-08-13

申请人： Chung-Lin Wu ,  Steven Sapp ,  Bigildis Dosdos ,  Suresh Belani ,  Sunggeun Yoon

发明人： Chung-Lin Wu ,  Steven Sapp ,  Bigildis Dosdos ,  Suresh Belani ,  Sunggeun Yoon

IPC分类号： H01L23/495 ,  H01L21/00

CPC分类号： H01L23/4334 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/16 ,  H01L29/4236 ,  H01L29/42372 ,  H01L29/7813 ,  H01L29/7828 ,  H01L2224/13147 ,  H01L2224/16245 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00014

摘要： The multi-chip leadless module 200 has integrated circuit (IC) 150, dual n-channel mosfet 110, IC leads 210, 211, 212, gate leads 213, 213, and source leads 217-220 encapsulated in resin 250. The IC 150 and the dual n-channel mosfet 110 are mounted face down on the leads. IC leads 210, 211, 212 are made of planar metal and connect, respectively, to the electrodes TEST, VDD and VM on the IC 150 using a flip chip technique to assemble the leads on copper pillars or copper studs.

摘要翻译： 多芯片无引线模块200具有封装在树脂250中的集成电路（IC）150，双n沟道MOSFET 110，IC引线210,211,212，栅极引线213,213和源极引线217-220。IC 150 并且双n沟道MOSFET 110面朝下安装在引线上。 IC引线210,211,212由平面金属制成，并且使用倒装芯片技术分别连接到IC 150上的电极TEST，VDD和VM，以将铜柱或铜螺柱上的引线组装。

公开(公告)号：US20140042599A1

公开(公告)日：2014-02-13

申请号：US13584015

申请日：2012-08-13

申请人： Chung-Lin Wu ,  Steven Sapp ,  Bigildis Dosdos ,  Suresh Belani ,  Sunggeun Yoon

发明人： Chung-Lin Wu ,  Steven Sapp ,  Bigildis Dosdos ,  Suresh Belani ,  Sunggeun Yoon

IPC分类号： H01L23/495 ,  H01L21/60

CPC分类号： H01L23/4334 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/16 ,  H01L29/4236 ,  H01L29/42372 ,  H01L29/7813 ,  H01L29/7828 ,  H01L2224/13147 ,  H01L2224/16245 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00014

摘要： The multi-chip leadless module 200 has integrated circuit (IC) 150, dual re-channel mosfet 110, IC leads 210, 211, 212, gate leads 213, 213, and source leads 217-220 encapsulated in resin 250. The IC 150 and the dual n-channel mosfet 110 are mounted face down on the leads. IC leads 210, 211, 212 are made of planar metal and connect, respectively, to the electrodes TEST, VDD and VM on the IC 150 using a flip chip technique to assemble the leads on copper pillars or copper studs.

摘要翻译： 多芯片无引线模块200具有集成电路（IC）150，双重信道mosfet 110，IC引线210,211,212，栅极引线213,213和封装在树脂250中的源极引线217-220。IC 150 并且双n沟道MOSFET 110面朝下安装在引线上。 IC引线210,211,212由平面金属制成，并且使用倒装芯片技术分别连接到IC 150上的电极TEST，VDD和VM，以将铜柱或铜螺柱上的引线组装。

公开(公告)号：US20110078899A1

公开(公告)日：2011-04-07

申请号：US12964691

申请日：2010-12-09

申请人： Jeongil Lee ,  Myoungho Lee ,  Bigildis Dosdos ,  Charles Suico ,  Lee Man Fai Edwin ,  David Chong Sook Lim ,  Adriano M. Vilas-Boas

发明人： Jeongil Lee ,  Myoungho Lee ,  Bigildis Dosdos ,  Charles Suico ,  Lee Man Fai Edwin ,  David Chong Sook Lim ,  Adriano M. Vilas-Boas

IPC分类号： H05K3/10

CPC分类号： H01L23/49575 ,  H01L23/3107 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01M10/0525 ,  H01M10/425 ,  H01M10/44 ,  H01M2200/00 ,  Y10T29/49155 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A multi-chip module suitable for use in a battery protection circuit. The multi-chip module includes an integrated circuit chip, a first power transistor, a second power transistor, a first connection structure electrically coupling the integrated circuit chip to the first power transistor, a second connection structure electrically coupling the integrated circuit chip to the second power transistor, and a leadframe structure comprising a first lead, a second lead, a third lead and a fourth lead, wherein the integrated circuit chip, the first power transistor, and the second power transistor are mounted on the leadframe structure. A molding material covers at least part of the integrated circuit chip, the first power transistor, the second power transistor, the first connection structure, and the second connection structure.

摘要翻译： 适用于电池保护电路的多芯片模块。 多芯片模块包括集成电路芯片，第一功率晶体管，第二功率晶体管，将集成电路芯片电耦合到第一功率晶体管的第一连接结构，将集成电路芯片电耦合到第二功率晶体管的第二连接结构 功率晶体管，以及包括第一引线，第二引线，第三引线和第四引线的引线框结构，其中所述集成电路芯片，所述第一功率晶体管和所述第二功率晶体管安装在所述引线框结构上。 成型材料覆盖集成电路芯片，第一功率晶体管，第二功率晶体管，第一连接结构和第二连接结构的至少一部分。

公开(公告)号：US08487371B2

公开(公告)日：2013-07-16

申请号：US13074921

申请日：2011-03-29

申请人： Daniel M. Kinzer ,  Steven Sapp ,  Chung-Lin Wu ,  Oseob Jeon ,  Bigildis Dosdos

发明人： Daniel M. Kinzer ,  Steven Sapp ,  Chung-Lin Wu ,  Oseob Jeon ,  Bigildis Dosdos

IPC分类号： H01L29/66 ,  H01L23/62 ,  H01L27/088 ,  H01L21/338

CPC分类号： H01L29/7827 ,  H01L24/13 ,  H01L29/41766 ,  H01L29/66666 ,  H01L29/7809 ,  H01L29/7811 ,  H01L29/7813 ,  H01L2224/131 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/00

摘要： Systems and methods of fabricating Wafer Level Chip Scale Packaging (WLCSP) devices with transistors having source, drain and gate contacts on one side of the transistor while still having excellent electrical performance with low drain-to-source resistance RDS(on) include using a two-metal drain contact technique. The RDS(on) is further improved by using a through-silicon-via (TSV) technique to form a drain contact or by using a copper layer closely connected to the drain drift.

摘要翻译： 具有晶体管的晶体管的晶体管的晶体管的一侧制造晶圆级芯片级封装（WLCSP）器件的系统和方法仍然具有优异的电气性能，低漏极 - 源极电阻RDS（on）包括使用 双金属漏极接触技术。 通过使用穿硅通孔（TSV）技术来形成漏极接触或通过使用紧密连接到漏极漂移的铜层来进一步改善RDS（on）。

公开(公告)号：US08003447B2

公开(公告)日：2011-08-23

申请号：US12964691

申请日：2010-12-09

申请人： Jeongil Lee ,  Myoungho Lee ,  Bigildis Dosdos ,  Charles Suico ,  Edwin Man Fai Lee ,  David Chong Sook Lim ,  Adriano M. Vilas-Boas

发明人： Jeongil Lee ,  Myoungho Lee ,  Bigildis Dosdos ,  Charles Suico ,  Edwin Man Fai Lee ,  David Chong Sook Lim ,  Adriano M. Vilas-Boas

IPC分类号： H01L23/495

CPC分类号： H01L23/49575 ,  H01L23/3107 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01M10/0525 ,  H01M10/425 ,  H01M10/44 ,  H01M2200/00 ,  Y10T29/49155 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A multi-chip module suitable for use in a battery protection circuit. The multi-chip module includes an integrated circuit chip, a first power transistor, a second power transistor, a first connection structure electrically coupling the integrated circuit chip to the first power transistor, a second connection structure electrically coupling the integrated circuit chip to the second power transistor, and a leadframe structure comprising a first lead, a second lead, a third lead and a fourth lead, wherein the integrated circuit chip, the first power transistor, and the second power transistor are mounted on the leadframe structure. A molding material covers at least part of the integrated circuit chip, the first power transistor, the second power transistor, the first connection structure, and the second connection structure.

摘要翻译： 适用于电池保护电路的多芯片模块。 多芯片模块包括集成电路芯片，第一功率晶体管，第二功率晶体管，将集成电路芯片电耦合到第一功率晶体管的第一连接结构，将集成电路芯片电耦合到第二功率晶体管的第二连接结构 功率晶体管，以及包括第一引线，第二引线，第三引线和第四引线的引线框结构，其中所述集成电路芯片，所述第一功率晶体管和所述第二功率晶体管安装在所述引线框结构上。 成型材料覆盖集成电路芯片，第一功率晶体管，第二功率晶体管，第一连接结构和第二连接结构的至少一部分。

公开(公告)号：US20090261461A1

公开(公告)日：2009-10-22

申请号：US12104182

申请日：2008-04-16

申请人： Steven Sapp ,  Chung-Lin Wu ,  Maria Christina B. Estacio ,  Bigildis Dosdos ,  Hamza Yilmaz

发明人： Steven Sapp ,  Chung-Lin Wu ,  Maria Christina B. Estacio ,  Bigildis Dosdos ,  Hamza Yilmaz

IPC分类号： H01L23/495 ,  H01L21/60

CPC分类号： H01L23/49562 ,  H01L23/49524 ,  H01L23/49548 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/37147 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48095 ,  H01L2224/4813 ,  H01L2224/48247 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/85399 ,  H01L2224/05599 ,  H01L2924/206

摘要： Semiconductor packages comprising a plurality of lead fingers containing a lead intrusion at the edge of the lead fingers are described. The semiconductor packages comprise an integrated circuit chip that is connected to a die pad and is electrically connected to multiple lead fingers. One or more of the lead fingers may have a lead intrusion disposed on the external exposed lower surface of the lead finger. The lead intrusion may have a height that is about ⅕ to about ½ the height of a lead finger, a width that is about ⅕ to about 1/2 the width of a lead finger, and a depth that is about ¼ to about ¾ the length of the externally exposed lower surface of a lead finger. The lead intrusion increases the area on the lead finger that contacts a bond material, such as solder, and therefore increase the strength of the joint between the semiconductor package and an external surface to which the lead finger is connected (i.e., a PCB). The lead intrusion allows out gassing during reflow of the bond material which may reduce voiding. The lead intrusion can also increase bond joint reliability by providing longer crack propagation length.

摘要翻译： 描述了包括在引线的边缘处包含铅侵入的多个引线指的半导体封装。 半导体封装包括连接到管芯焊盘并且电连接到多个引线指的集成电路芯片。 一个或多个引导指可以具有设置在引线指的外部暴露下表面上的引线侵入。 引线入侵可以具有引导指的高度的约1/5至约1/2的高度，宽度是引线指的宽度的大约1/5至大约1/2，并且深度约为1/4 到铅笔的外部暴露的下表面的长度的约3/4。 引线入侵增加了引线接触诸如焊料的接合材料的引线区域，因此增加了半导体封装与引线指连接的外表面（即PCB）之间的接合强度。 铅侵入允许在回流焊接材料期间放气，这可能减少空隙。 铅侵入也可以通过提供更长的裂纹扩展长度来增加接合点的可靠性。

公开(公告)号：US20070187807A1

公开(公告)日：2007-08-16

申请号：US11672728

申请日：2007-02-08

申请人： Jeongil Lee ,  Myoungho Lee ,  Bigildis Dosdos ,  Charles Suico ,  Lee Man Fai Edwin ,  David Chong Sook Lim ,  Adriano M. Vilas-Boas

发明人： Jeongil Lee ,  Myoungho Lee ,  Bigildis Dosdos ,  Charles Suico ,  Lee Man Fai Edwin ,  David Chong Sook Lim ,  Adriano M. Vilas-Boas

IPC分类号： H01L23/495

CPC分类号： H01L23/49575 ,  H01L23/3107 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01M10/0525 ,  H01M10/425 ,  H01M10/44 ,  H01M2200/00 ,  Y10T29/49155 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A multi-chip module suitable for use in a battery protection circuit. The multi-chip module includes an integrated circuit chip, a first power transistor, a second power transistor, a first connection structure electrically coupling the integrated circuit chip to the first power transistor, a second connection structure electrically coupling the integrated circuit chip to the second power transistor, and a leadframe structure comprising a first lead, a second lead, a third lead and a fourth lead, wherein the integrated circuit chip, the first power transistor, and the second power transistor are mounted on the leadframe structure. A molding material covers at least part of the integrated circuit chip, the first power transistor, the second power transistor, the first connection structure, and the second connection structure.

摘要翻译： 适用于电池保护电路的多芯片模块。 多芯片模块包括集成电路芯片，第一功率晶体管，第二功率晶体管，将集成电路芯片电耦合到第一功率晶体管的第一连接结构，将集成电路芯片电耦合到第二功率晶体管的第二连接结构 功率晶体管，以及包括第一引线，第二引线，第三引线和第四引线的引线框结构，其中所述集成电路芯片，所述第一功率晶体管和所述第二功率晶体管安装在所述引线框结构上。 成型材料覆盖集成电路芯片，第一功率晶体管，第二功率晶体管，第一连接结构和第二连接结构的至少一部分。

公开(公告)号：US07868432B2

公开(公告)日：2011-01-11

申请号：US11672728

申请日：2007-02-08

申请人： Jeongil Lee ,  Myoungho Lee ,  Bigildis Dosdos ,  Charles Suico ,  Lee Man Fai Edwin ,  David Chong Sook Lim ,  Adriano M. Vilas-Boas

发明人： Jeongil Lee ,  Myoungho Lee ,  Bigildis Dosdos ,  Charles Suico ,  Lee Man Fai Edwin ,  David Chong Sook Lim ,  Adriano M. Vilas-Boas

IPC分类号： H01L23/495

CPC分类号： H01L23/49575 ,  H01L23/3107 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01M10/0525 ,  H01M10/425 ,  H01M10/44 ,  H01M2200/00 ,  Y10T29/49155 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A multi-chip module suitable for use in a battery protection circuit. The multi-chip module includes an integrated circuit chip, a first power transistor, a second power transistor, a first connection structure electrically coupling the integrated circuit chip to the first power transistor, a second connection structure electrically coupling the integrated circuit chip to the second power transistor, and a leadframe structure comprising a first lead, a second lead, a third lead and a fourth lead, wherein the integrated circuit chip, the first power transistor, and the second power transistor are mounted on the leadframe structure. A molding material covers at least part of the integrated circuit chip, the first power transistor, the second power transistor, the first connection structure, and the second connection structure.