摘要:
A chip package is provided, the chip package including: a chip carrier; a chip disposed over and electrically connected to a chip carrier top side; an electrically insulating material disposed over and at least partially surrounding the chip; one or more electrically conductive contact regions formed over the electrically insulating material and in electrical connection with the chip; a further electrically insulating material disposed over a chip carrier bottom side; wherein an electrically conductive contact region on the chip carrier bottom side is released from the further electrically insulating material.
摘要:
A semiconductor module includes a module package including a first substrate having a first semiconductor device and a second substrate having a second semiconductor device. A first outer conductor extends from the module package and is connected to the first substrate and a second outer conductor extends from the module package and is connected to the second substrate. A method for producing the semiconductor module includes attaching first outer conductors of a leadframe to a first substrate, where the first substrate includes a first semiconductor device that is attached to the first substrate either before or after attaching the first outer conductors. A second substrate is provided including a signal processing circuit and the second substrate is fastening to second outer conductors of the leadframe.
摘要:
One aspect of the invention relates to a power semiconductor device in lead frame technology and a method for producing the same. The power semiconductor device has a vertical current path through a power semiconductor chip. The power semiconductor chip has at least one large-area electrode on its top side and a large-area electrode on its rear side. The rear side electrode is surface-mounted on a lead frame chip island of a lead frame and the top side electrode is electrically connected to an internal lead of the lead frame via a connecting element. The connecting element has an electrically conductive film on a surface facing the top side electrode, the electrically conductive film extending from the top side electrode to the internal lead.
摘要:
A semiconductor component including a stack of semiconductor chips, the semiconductor chips being fixed cohesively one on top of another, is disclosed. The contact areas of the semiconductor chips are led as far as the edges of the semiconductor chips and conductor portions extend at least from an upper edge to a lower edge of the edge sides of the semiconductor chips in order to electrically connect the contact area of the stacked semiconductor chips to one another.
摘要:
A semiconductor component includes at least one semiconductor chip arranged on a mounting substrate and connected thereto via bonding wires. For effective dissipation of heat, a solderable interlayer is arranged on the active upper side of the semiconductor chip and a heat sink is soldered onto the solderable interlayer. A method is also described for producing a semiconductor component with a solderable interlayer disposed on an active upper side of a semiconductor chip and with a heat sink soldered to the solderable interlayer.
摘要:
A semiconductor chip has at least one first contact and one second contact on its top side and has connecting elements which are arranged jointly on a structure element and which connect the first contact and the second contact of the top side of the semiconductor chip to the external contacts.
摘要:
Apparatus for packaging two chips includes, in some embodiments, a first chip having at least one elevation and at least one cutout on a bottom thereof. It also includes a second chip having at least one elevation and at least one cutout on a top thereof. In some embodiments disclosed, the elevations and cutouts of the first chip and the second chip are configured to allow the elevations to be intermeshed with the cutouts when the chips are stacked with the bottom of the first chip engaging the top of the second chip.
摘要:
A semiconductor component includes flip-chip contacts arranged on a wiring structure of a semiconductor chip. The wiring structure includes at least one metallization layer and at least one dielectric insulation layer made of a low-k material with a relative permittivity εr lower than the relative permittivity of a silicon dioxide. The flip-chip contacts are arranged on contact areas of an upper metallization layer and have a polymer core surrounded by a lead-free solder sheath.
摘要:
A semiconductor module includes a module package including a first substrate having a first semiconductor device and a second substrate having a second semiconductor device. A first outer conductor extends from the module package and is connected to the first substrate and a second outer conductor extends from the module package and is connected to the second substrate. A method for producing the semiconductor module includes attaching first outer conductors of a leadframe to a first substrate, where the first substrate includes a first semiconductor device that is attached to the first substrate either before or after attaching the first outer conductors, A second substrate is provided including a signal processing circuit and the second substrate is fastening to second outer conductors of the leadframe.
摘要:
A layer improves adhesion between interfaces of different components in semiconductor devices. The interface of a first component includes surfaces of a circuit carrier and the interface of a second component includes contact surfaces of a plastic package molding compound. The adhesion-improving layer includes a mixture of polymeric chain molecules and carbon nanotubes.