Arrangement and method for measuring the temperature of a web, as well as a method for performing the steps of the measuring the temperature

    公开(公告)号:US12130184B2

    公开(公告)日:2024-10-29

    申请号:US17617213

    申请日:2020-06-16

    摘要: The present invention relates to an arrangement (1) for measuring the temperature of a web. The arrangement (1) comprises a plurality of sensors (3) for contactless measuring of the temperature, an elongated housing (5) intended for extending essentially along a transverse direction (T) which is transverse to the direction of movement of a web. The sensors (3) are arranged in a chamber (6) within the housing (5) and spread along the front side (7a) of the housing (5). Each sensor (3) is connected to a data bus (9) for providing information of the measured temperature to other systems and/or apparatuses. The sensors (3) are attached to a support structure (19) having at least one rotatable shaft (23) in the interior of the housing (7), and wherein the shaft (23) is arranged to rotate the support structure (19) such that the sensors (3) are displaced to a calibration and/or protection position away from the openings (11) for calibration and/or protection of the sensors (3). The invention also relates to a method for measuring the temperature of a web, a computer program, a computer readable medium and a control unit.

    Leadless pacemaker systems, devices and methods that monitor for atrial capture

    公开(公告)号:US12121732B2

    公开(公告)日:2024-10-22

    申请号:US17897041

    申请日:2022-08-26

    申请人: Pacesetter, Inc.

    摘要: For use by an implantable system including a first and second leadless pacemakers (LPs) implanted, respectively, in first and second cardiac chambers, a method comprises storing, within memory of the first LP, a paced activation morphology template corresponding to far-field signal components expected to be present in an EGM sensed by the first LP when a pacing pulse delivered to the second cardiac chamber by the second LP captures the second cardiac chamber. The method also includes the first LP comparing a morphology of a portion of an EGM sensed by the first LP to the paced activation morphology template to determine whether a match therebetween is detected, and determining whether capture of the second cardiac chamber occurred or failed to occur, based on whether the first LP detects a match between the morphology of the portion of the EGM and the paced activation morphology template.

    Open block boundary group programming for non-volatile memory

    公开(公告)号:US12112814B2

    公开(公告)日:2024-10-08

    申请号:US17837345

    申请日:2022-06-10

    摘要: Technology for open block boundary group programming of non-volatile memory such as NAND. The open block boundary group could potentially be read in response to a request from a host for the data stored in the group. In an aspect, the memory system will determine whether programming a group of memory cells in a selected block will result in an open block. If it will not result in an open block, then the memory system uses a first set of programming parameters to program the group. However, if it will result in an open block then the memory system uses a second set of programming parameters to program the boundary group. The programming parameters may include verify levels and/or a program voltage step size. The second set of programming parameters can tighten Vt distributions, which mitigates mis-reads if the boundary group is read.

    Non-volatile memory integrated with artificial intelligence system for preemptive block management

    公开(公告)号:US12099743B2

    公开(公告)日:2024-09-24

    申请号:US17709745

    申请日:2022-03-31

    IPC分类号: G06F3/00 G06F3/06 G06N5/04

    摘要: A non-volatile storage apparatus comprises a plurality of memory cells that store host data and two models, a control circuit for writing to and reading from the memory cells, and an inference circuit. The inference circuit uses the first model with a first set of one or more metrics describing current operation of the non-volatile storage apparatus to make a first level prediction about defects and uses the second model with a second set of one or more metrics describing current operation of the non-volatile storage apparatus to make a second level prediction about defects. In one embodiment, the first level prediction is faster to make and uses less data collection, but is not as reliable, as the second level prediction. While second level prediction is more reliable, it takes more time to perform and requires a more intensive data collection, so it is only used when needed.

    Bundle multiple timing parameters for fast SLC programming

    公开(公告)号:US12079496B2

    公开(公告)日:2024-09-03

    申请号:US17901310

    申请日:2022-09-01

    IPC分类号: G06F3/06

    摘要: Technology is disclosed herein for managing timing parameters when programming memory cells. Timing parameters used sub-clocks in an MLC program mode may also be used for those same sub-clocks in a first SLC program mode. However, in a second SLC program mode a different set of timing parameters may be used for that set of sub-clocks. Using the same set of timing parameters for the MLC program mode and the first SLC program mode saves storage space. However, the timing parameters for the MLC program mode may be slower than desired for SLC programming. A different set of timing parameters may be used for the second SLC program mode to provide for faster program operation. Moreover, the different set of timing parameters used for the faster SLC program mode do not require storage of a separate set of timing parameters.

    Non-volatile memory with reduced word line switch area

    公开(公告)号:US12032837B2

    公开(公告)日:2024-07-09

    申请号:US17957424

    申请日:2022-09-30

    IPC分类号: G06F3/06

    摘要: A three dimensional non-volatile memory structure includes word lines connected to non-volatile memory cells arranged in blocks. A plurality of word line switches are connected to the word lines and one or more sources of voltage. The word line switches are arranged in groups of X word line switches such that each group of X word line switches is positioned in a line under Y blocks of non-volatile memory cells and has a length that is equal to the width of the Y blocks of non-volatile memory cells. To allow closer placement of word line switches that supply different blocks and support the possible large voltage differences between their transistors, word line switches supplying different blocks are formed over a single active region and separated by an intermediate control gate set to be off.