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    Information processing apparatus, information processing method, and storage medium
    82.
    发明授权
    Information processing apparatus, information processing method, and storage medium 有权

    公开(公告)号：US09824855B2

    公开(公告)日：2017-11-21

    申请号：US15128713

    申请日：2015-02-06

    申请人： NIPPON CONTROL SYSTEM CORPORATION

    发明人： Dai Tsunoda

    IPC分类号： H01J37/302 ,  G03F1/20 ,  G03F1/84 ,  G03F7/20 ,  H01J37/317 ,  G06T7/13

    摘要： In order to solve the problem that information indicating three or more points on a contour of a figure drawn by an electron beam writer cannot be more precisely acquired, an information processing apparatus includes: an accepting unit that accepts pattern information indicating a pattern figure, and actually observed contour information acquired using an image obtained by capturing an image of a figure drawn by an electron beam writer; a transforming information acquiring unit that acquires transforming information, which is information that minimizes the sum of squares of differences between convolution values corresponding to three or more corrected contour points of a given point spread function in a region indicated by the pattern figure indicated by the pattern information and a threshold regarding the convolution values; a corrected contour point acquiring unit that acquires corrected contour point information, which is information indicating three or more corrected contour points respectively corresponding to three or more actually observed contour points, using the transforming information; and an output unit that outputs the corrected contour point information. Accordingly, it is possible to more precisely acquire information indicating three or more points on a contour of a figure drawn by an electron beam writer.

    TWO-DIMENSIONAL HETEROSTRUCTURE MATERIALS
    87.
    发明申请
    TWO-DIMENSIONAL HETEROSTRUCTURE MATERIALS 有权
    二维结构材料

    公开(公告)号：US20170025505A1

    公开(公告)日：2017-01-26

    申请号：US15215389

    申请日：2016-07-20

    申请人： UT-Battelle, LLC

    发明人： David B. Geohegan ,  Christopher M. Rouleau ,  Kai Wang ,  Kai Xiao ,  Ming-Wei Lin ,  Alexander A. Puretzky ,  Masoud Mahjouri-Samani

    IPC分类号： H01L29/267 ,  G03F1/20 ,  H01L21/027 ,  H01L21/033 ,  H01L21/02

    CPC分类号： G03F1/20 ,  H01L21/02568 ,  H01L21/02664 ,  H01L21/0332 ,  H01L29/0661 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/735 ,  H01L29/778

    摘要： Methods, articles of manufacture and systems for creating new nanoscale two dimensional materials comprising designed arrays of lateral or vertical heterojunctions may be fabricated by first lithographically masking a 2D material. Exposed, or unmasked, regions of the 2D material may be converted to a different composition of matter to form lateral or vertical heterojunctions according to the patterned mask. PLD and high kinetic energy impingement of atoms may replace or add atoms in the exposed regions, and a plurality of the exposed regions may be converted concurrently. The process may be repeated one or more times on either side of the same 2D material to form any suitable combination of lateral heterojunctions and/or vertical heterojunctions, comprising semiconductors, metals or insulators or any suitable combination thereof. Furthermore, the resulting 2D material may comprise p-n, n-n, p-p, n-p-n and p-n-p junctions, or any suitable combination thereof.

    摘要翻译： 可以通过首先光刻掩蔽2D材料来制造包括设计的横向或垂直异质结阵列的新型纳米级二维材料的制造方法和制造系统。 可以将2D材料的暴露或未掩蔽的区域转化为不同的物质组成，以形成根据图案化掩模的横向或垂直异质结。 PLD和原子的高动能冲击可以取代或添加暴露区域中的原子，并且可以同时转换多个暴露区域。 该过程可以在相同2D材料的任一侧上重复一次或多次以形成横向异质结和/或垂直异质结的任何合适的组合，包括半导体，金属或绝缘体或其任何合适的组合。 此外，所得到的2D材料可以包括p-n，n-n，p-p，n-p-n和p-n-p结，或其任何合适的组合。