公开(公告)号：US10207469B2

公开(公告)日：2019-02-19

申请号：US15534312

申请日：2015-12-08

申请人： University of Houston System

发明人： Vincent M. Donnelly ,  Demetre J. Economou ,  Siyuan Tian

IPC分类号： B82Y30/00 ,  B29D11/00 ,  G03F1/20 ,  H01J37/302 ,  H01J37/317 ,  H01L21/027

摘要： Nanopantography is a method for patterning nanofeatures over large areas. Transfer of patterns defined by nanopantography using highly selective plasma etching, with an oxide layer of silicon serving as a hard mask, can improve patterning speed and etch profile. With this method, high aspect ratio features can be fabricated in a substrate with no mask undercut. The ability to fabricate complex patterns using nanopantography, followed by highly selective plasma etching, provides improved patterning speed, feature aspect ratio, and etching profile.

公开(公告)号：US20170361551A1

公开(公告)日：2017-12-21

申请号：US15534312

申请日：2015-12-08

申请人： University of Houston System

发明人： Vincent M. Donnelly ,  Demetre J. Economou ,  Siyuan Tian

IPC分类号： B29D11/00 ,  B82Y30/00 ,  H01J37/317 ,  H01L21/027 ,  G03F1/20 ,  H01J37/302

CPC分类号： B29D11/00375 ,  B29D11/00 ,  B29D11/00365 ,  B82Y30/00 ,  G03F1/20 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/21 ,  H01J2237/2811 ,  H01J2237/2817 ,  H01J2237/31776 ,  H01L21/0274

摘要： Nanopantography is a method for patterning nanofeatures over large areas. Transfer of patterns defined by nanopantography using highly selective plasma etching, with an oxide layer of silicon serving as a hard mask, can improve patterning speed and etch profile. With this method, high aspect ratio features can be fabricated in a substrate with no mask undercut. The ability to fabricate complex patterns using nanopantography, followed by highly selective plasma etching, provides improved patterning speed, feature aspect ratio, and etching profile.