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1220 条记录 (耗时 0.035 秒)

    Multispectral Energy/Power Meter For Laser Sources
    83.
    发明申请
    Multispectral Energy/Power Meter For Laser Sources 审中-公开
    用于激光源的多光谱能量/功率计

    公开(公告)号：US20060278897A1

    公开(公告)日：2006-12-14

    申请号：US11423325

    申请日：2006-06-09

    申请人： Donald Heller ,  Brian Pryor ,  John Walling

    发明人： Donald Heller ,  Brian Pryor ,  John Walling

    IPC分类号： H01L29/768

    CPC分类号： G01J1/4228 ,  G01J1/04 ,  G01J1/0418 ,  G01J1/0474 ,  G01J1/0488 ,  G01J1/08

    摘要： A device for measuring optical power simultaneously for two or more spectral regions. Two or more photodetectors, such as photodiodes, measure the pulse energy and/or power emitted by a laser having output in two or more spectral regions. The laser radiation is transmitted through a diffuser or beamsplitter, then filtered and/or attenuated so that light from each respective spectral region is incident on the active region of a photodiode. The device also includes electronic circuitry with one or more operational amplifiers for each photodiode, integrators and analog-to-digital converters. In a preferred embodiment, the device also includes a microprocessor to provide noise reduction and calibration functions for each photodiode output, and to drive a display or readout.

    摘要翻译： 一种用于同时测量两个或更多个光谱区域的光功率的装置。 两个或更多个光电探测器，例如光电二极管，测量具有在两个或更多个光谱区域中具有输出的激光器发射的脉冲能量和/或功率。 激光辐射通过扩散器或分束器传输，然后被滤波和/或衰减，使得来自每个相应光谱区域的光入射到光电二极管的有源区上。 该装置还包括具有用于每个光电二极管，积分器和模数转换器的一个或多个运算放大器的电子电路。 在优选实施例中，该装置还包括微处理器，用于为每个光电二极管输出提供降噪和校准功能，并驱动显示或读出。

    CMOS active pixel sensor shared amplifier pixel with reduced sense node capacitance
    84.
    发明申请
    CMOS active pixel sensor shared amplifier pixel with reduced sense node capacitance 有权
    CMOS有源像素传感器共享放大器像素具有降低的感测节点电容

    公开(公告)号：US20060273353A1

    公开(公告)日：2006-12-07

    申请号：US11440894

    申请日：2006-05-25

    申请人： Robert Guidash ,  Ravi Mruthyunjaya ,  Weize Xu

    发明人： Robert Guidash ,  Ravi Mruthyunjaya ,  Weize Xu

    IPC分类号： H01L29/768

    CPC分类号： H01L27/14641 ,  H01L27/14609

    摘要： An image sensor includes a unit cell having a plurality of pixels; the unit cell comprising an amplifier input transistor that is shared by the plurality of pixels; a plurality of floating diffusions that are joined by a floating diffusion interconnect layer and are connected to the amplifier input transistor; and an interconnect layer which forms an output signal wire which shields the floating diffusion interconnect layer.

    摘要翻译： 图像传感器包括具有多个像素的单位单元; 所述单元包括由所述多个像素共享的放大器输入晶体管; 多个浮动扩散，其通过浮动扩散互连层连接并连接到放大器输入晶体管; 以及形成屏蔽浮动扩散互连层的输出信号线的互连层。

    Semiconductor device having a plurality of different layers and method therefor
    87.
    发明申请
    Semiconductor device having a plurality of different layers and method therefor 有权
    具有多个不同层的半导体器件及其方法

    公开(公告)号：US20060240650A1

    公开(公告)日：2006-10-26

    申请号：US11111451

    申请日：2005-04-21

    申请人： Marius Orlowski ,  Vance Adams

    发明人： Marius Orlowski ,  Vance Adams

    IPC分类号： H01L21/425 ,  H01L29/768 ,  H01L27/148 ,  H01L29/74

    CPC分类号： H01L21/84 ,  H01L21/823807 ,  H01L21/823878 ,  H01L27/1203 ,  H01L29/165 ,  H01L29/78 ,  H01L29/7846 ,  H01L29/7848

    摘要： Mechanical stress control may be achieved using materials having selected elastic moduli. These materials may be selectively formed by implantation, may be provided as a plurality of buried layers interposed between the substrate and the active area, and may be formed by replacing selected portions of one or more buried layers. Any one or more of these methods may be used in combination. Mechanical stress control may be useful in the channel region of a semiconductor device to maximize its performance. In addition, these same techniques and structures may be used for other purposes besides mechanical stress control.

    摘要翻译： 可以使用具有选定的弹性模量的材料实现机械应力控制。 这些材料可以通过注入选择性地形成，可以设置为插入在基板和有源区域之间的多个掩埋层，并且可以通过替换一个或多个掩埋层的选定部分来形成。 这些方法中的任何一种或多种可以组合使用。 机械应力控制在半导体器件的通道区域中可能是有用的，以使其性能最大化。 此外，除了机械应力控制之外，这些相同的技术和结构可以用于其它目的。

    Semiconductor device and manufacturing method thereof
    88.
    发明申请
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US20060231867A1

    公开(公告)日：2006-10-19

    申请号：US11395772

    申请日：2006-03-31

    申请人： Tetsuya Takahashi

    发明人： Tetsuya Takahashi

    IPC分类号： H01L29/768

    CPC分类号： H01L29/861 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/7394 ,  H01L29/7824 ,  H01L29/78624 ,  H01L29/868

    摘要： A semiconductor device has a semiconductor base, an anode electrode, and a cathode electrode. The semiconductor base includes a P type semiconductor substrate, an insulating film, an N− type semiconductor region formed on the insulating film, an N+ type semiconductor region, and a P+ type semiconductor region facing the N+ type semiconductor region via the N− type semiconductor region. The semiconductor device further has an N type diffusion layer which is formed, in the N− type semiconductor region at the interface between the insulating film and the N− type semiconductor region, so as to have a concentration gradient such that the N type impurity concentration increases from the side of the anode electrode to the side of the cathode electrode.

    摘要翻译： 半导体器件具有半导体基底，阳极电极和阴极电极。 半导体基底包括形成在绝缘膜上的P型半导体衬底，绝缘膜，N +型半导体区域，N + +型半导体区域和P 经由N + O型半导体区域面向N + +型半导体区域的超导型半导体区域。 半导体器件还具有N型扩散层，其在绝缘膜和N +型半导体区域之间的界面处形成在N + - 型半导体区域中， 使得具有浓度梯度，使得N型杂质浓度从阳极侧到阴极侧增加。

    Imaging system and driving method
    90.
    发明申请
    Imaging system and driving method 审中-公开
    成像系统及驱动方法

    公开(公告)号：US20060220070A1

    公开(公告)日：2006-10-05

    申请号：US11367237

    申请日：2006-03-03

    申请人： Shinichiro Izawa ,  Kazutaka Itsumi ,  Yuzo Otsuru ,  Yoshihiro Okada

    发明人： Shinichiro Izawa ,  Kazutaka Itsumi ,  Yuzo Otsuru ,  Yoshihiro Okada

    IPC分类号： H01L29/768

    CPC分类号： H04N5/37213 ,  H01L27/14812 ,  H01L27/1485 ,  H01L29/76883 ,  H04N5/361 ,  H04N5/3765

    摘要： An imaging system, capable of reducing blooming in a solid-state imaging device and improving image sensitivity, comprises an imaging section which has at least three transfer electrodes and is continuously arranged with pixels for producing information charges in response to the light from the outside, wherein the information charges are stored and transferred using potential wells formed by potentials applied to the transfer electrodes and, during image capture, one of the transfer electrodes is maintained in an ON state and at least another one of the transfer electrodes is alternately switched between an ON state and an OFF state. It is more preferable to average the amount of generated dark current under the transfer electrodes by switching the transfer electrodes between an ON state and an OFF state for image capture. This provides restraint of a difference in the amount of generated dark current between pixels, thus reducing image graininess.

    摘要翻译： 一种成像系统，能够减少固态成像装置中的起霜并提高图像敏感度，包括具有至少三个传送电极并且连续布置有像素的成像部件，用于响应于来自外部的光而产生信息电荷， 其中使用由施加到转移电极的电位形成的势阱来存储和传输信息电荷，并且在图像捕获期间，一个转移电极保持在导通状态，并且至少另一个转移电极在 ON状态和OFF状态。 更优选通过在导通状态和断开状态之间切换传输电极来平均转印电极下产生的暗电流的量来进行图像捕获。 这提供了限制像素之间产生的暗电流量的差异，从而降低图像颗粒度。