Solid-state image sensor
    1.
    发明申请
    Solid-state image sensor 审中-公开
    固态图像传感器

    公开(公告)号:US20080023729A1

    公开(公告)日:2008-01-31

    申请号:US11878725

    申请日:2007-07-26

    Inventor: Shinichiro Izawa

    CPC classification number: H01L27/1485 H01L27/14812 H01L27/14887

    Abstract: In cases where AGP driving is applied to a CCD solid-state image sensor having a horizontal overflow drain structure, a problem arises in that the charges overflow into the second channel regions (8) from the overflow drain regions (14), and noise is superimposed on the information charges. The CCD solid-state image sensor has a plurality of first channel regions (4) that are disposed parallel to each other, overflow drain regions (14) that are disposed between neighboring first channel regions (4), a plurality of separation regions (12) that are disposed between the first channel regions (4) and overflow drain regions (14), and a plurality of first transfer electrodes (10) that are disposed parallel to each other over the plurality of first channel regions in the direction perpendicular to the first channel regions (4). In other to solve the problem described above, the CCD solid-state image sensor further comprises second channel regions (9) which are disposed in positions corresponding to the regions where the first channel regions (4) and specified first transfer electrodes (10) intersect, and which have a higher concentration than the first channel regions (4), and the overflow drain regions (14) adjacent to the second channel regions (8) have protruding parts (18) that protrude toward the second channel regions (8).

    Abstract translation: 在AGP驱动应用于具有水平溢出漏极结构的CCD固态图像传感器的情况下,出现电荷从溢出漏极区域(14)溢出到第二沟道区域(8)中的问题,噪声是 叠加在信息收费上。 CCD固态图像传感器具有彼此平行设置的多个第一沟道区域(4),布置在相邻的第一沟道区域(4)之间的溢出漏极区域(14),多个分离区域(12) )设置在第一通道区域(4)和溢出漏极区域(14)之间,以及多个第一传输电极(10),其在与多个第一沟道区域垂直的方向上彼此平行地布置在多个第一沟道区域 第一通道区域(4)。 另外为了解决上述问题,CCD固态图像传感器还包括第二通道区域(9),其设置在与第一沟道区域(4)和指定的第一转移电极(10)相交的区域对应的位置 并且具有比第一沟道区域(4)更高的浓度,并且与第二沟道区域(8)相邻的溢流漏极区域(14)具有朝向第二沟道区域(8)突出的突出部分(18)。

    Solid-state image sensor
    2.
    发明申请
    Solid-state image sensor 审中-公开
    固态图像传感器

    公开(公告)号:US20070280402A1

    公开(公告)日:2007-12-06

    申请号:US11785874

    申请日:2007-04-20

    CPC classification number: G11C27/04

    Abstract: A mixing of color that follows mixing of horizontally adjoining information charges corresponding to different colors is minimized during an operation for adding information charges of a plurality of pixels in a horizontal direction and during a high-speed horizontal transfer operation in a horizontal CCD shift register of a CCD image sensor. An impurity is used for forming barrier regions having a shallow channel potential among the barrier regions and storage regions that constitute transfer stages of the horizontal CCD shift register. The concentration of the impurity is established separately in a main portion, which is composed of transfer stages that are connected to the output ends of vertical CCD shift registers, and in a dummy portion, which connects the main portion with an output section and has a width that gradually decreases towards the output section. The barrier potential is therefore also established separately in the main portion and the dummy portion. The barrier potential is set to be high in the main portion, and the overflow of information charges into adjoining wells is minimized during the addition operation. The transfer length may be longer in the dummy portion, in which the barrier potential is limited and the fringe electric field is increased, ensuring efficient transfer during high-speed horizontal transfer.

    Abstract translation: 在用于在水平方向上添加多个像素的信息电荷的操作期间和在水平CCD移动寄存器的水平CCD移位寄存器的高速水平传输操作期间的操作期间,混合了与不同颜色相对应的水平相邻信息电荷之后混合的颜色混合 CCD图像传感器。 在构成水平CCD移位寄存器的转移级的屏障区域和存储区域中,使用杂质形成具有浅沟道电位的势垒区域。 杂质的浓度分别在与垂直CCD移位寄存器的输出端连接的传送级以及将主要部分与输出部连接的虚拟部分中的主要部分中建立,并且具有 朝向输出部分逐渐减小的宽度。 因此,在主要部分和虚拟部分中分别设置了势垒电位。 在主要部分中势垒电位被设置为高,并且在添加操作期间信息电荷溢出到相邻的阱中被最小化。 在障碍电位受限并且边缘电场增加的虚拟部分中的传送长度可能更长,确保在高速水平传送期间的有效传送。

    Solid-state image pickup device that suppresses crosstalk between pixels
    4.
    发明授权
    Solid-state image pickup device that suppresses crosstalk between pixels 有权
    固态图像拾取装置,其抑制像素之间的串扰

    公开(公告)号:US07538811B2

    公开(公告)日:2009-05-26

    申请号:US11212619

    申请日:2005-08-29

    CPC classification number: H01L27/14818 H01L27/14812

    Abstract: In an image pickup portion of a frame transfer CCD image sensor, a constitution that inhibits color mixing from occurring between light-sensitive pixels adjacent along a vertical CCD shift register channel is provided. A protrusion extending on the channel is formed at a clock wiring formed on a channel stop of the vertical CCD shift register with an wiring layer having the light-shielding property. When the protrusion portion is disposed at a boundary of light-sensitive pixels in the channel, a non-light-shielding portion generated at the boundary can be suppressed. The protrusions are disposed so as to alternately protrude from the clock wirings on both sides of the channel.

    Abstract translation: 在帧转移CCD图像传感器的图像拾取部分中,提供了禁止在垂直CCD移位寄存器通道相邻的感光像素之间发生混色的结构。 在具有遮光性的布线层的垂直CCD移位寄存器的通道停止部上形成的时钟布线形成有在沟道上延伸的突起。 当突起部设置在通道中的光敏像素的边界时,可以抑制在边界处产生的非遮光部。 突起被设置成从通道两侧的时钟布线交替突出。

    Imaging system and driving method
    5.
    发明申请
    Imaging system and driving method 审中-公开
    成像系统及驱动方法

    公开(公告)号:US20060220070A1

    公开(公告)日:2006-10-05

    申请号:US11367237

    申请日:2006-03-03

    Abstract: An imaging system, capable of reducing blooming in a solid-state imaging device and improving image sensitivity, comprises an imaging section which has at least three transfer electrodes and is continuously arranged with pixels for producing information charges in response to the light from the outside, wherein the information charges are stored and transferred using potential wells formed by potentials applied to the transfer electrodes and, during image capture, one of the transfer electrodes is maintained in an ON state and at least another one of the transfer electrodes is alternately switched between an ON state and an OFF state. It is more preferable to average the amount of generated dark current under the transfer electrodes by switching the transfer electrodes between an ON state and an OFF state for image capture. This provides restraint of a difference in the amount of generated dark current between pixels, thus reducing image graininess.

    Abstract translation: 一种成像系统,能够减少固态成像装置中的起霜并提高图像敏感度,包括具有至少三个传送电极并且连续布置有像素的成像部件,用于响应于来自外部的光而产生信息电荷, 其中使用由施加到转移电极的电位形成的势阱来存储和传输信息电荷,并且在图像捕获期间,一个转移电极保持在导通状态,并且至少另一个转移电极在 ON状态和OFF状态。 更优选通过在导通状态和断开状态之间切换传输电极来平均转印电极下产生的暗电流的量来进行图像捕获。 这提供了限制像素之间产生的暗电流量的差异,从而降低图像颗粒度。

    Charge transfer device, and control method therefor
    6.
    发明申请
    Charge transfer device, and control method therefor 审中-公开
    电荷转移装置及其控制方法

    公开(公告)号:US20060087576A1

    公开(公告)日:2006-04-27

    申请号:US11251253

    申请日:2005-10-14

    CPC classification number: H04N5/357

    Abstract: There is provided a charge transfer element, comprising a shift register, with a plurality of transfer electrodes, for transmitting information charge by application of clock pulses to the transfer electrodes, and an output section for outputting an output voltage according to information charge sequentially transferred and output from the shift register, a driver for applying clock pulses to the transfer electrodes at a specified timing, and a sampling circuit for sampling output voltage output from the output section, wherein the sampling circuit samples the output voltage, avoiding points in time where the clock pulses applied to the transfer electrodes change. In this way, it is possible to reduce noise that is superimposed on an output signal of a solid state imaging device.

    Abstract translation: 提供了一种电荷转移元件,包括具有多个转移电极的移位寄存器,用于通过对转移电极施加时钟脉冲来发送信息电荷;以及输出部分,用于根据依次传送的信息电荷输出输出电压, 从移位寄存器输出的驱动器,用于在指定时刻向传输电极施加时钟脉冲的驱动器,以及用于对从输出部分输出的输出电压进行采样的采样电路,其中采样电路对输出电压进行采样, 施加到转移电极的时钟脉冲改变。 以这种方式,可以减少叠加在固态成像装置的输出信号上的噪声。

    Solid-state image sensor
    7.
    发明申请
    Solid-state image sensor 审中-公开
    固态图像传感器

    公开(公告)号:US20060076581A1

    公开(公告)日:2006-04-13

    申请号:US11231805

    申请日:2005-09-22

    CPC classification number: H01L27/1485 H01L27/14689 H01L31/035281

    Abstract: A solid-state image sensor capable of suppressing increase of a dark current and a power consumption, and suppressing reduction of a transfer efficiency of electrons is provided. The solid-state image sensor comprises a charge storage region including a first conductive type first impurity region that has a first depth from a main surface of a semiconductor substrate, a first conductive type second impurity region that has a second depth larger than the first depth and an impurity concentration lower than an impurity concentration of the first impurity region, and a first conductive type third impurity region that has a third depth larger than the first depth and smaller than the second depth.

    Abstract translation: 提供能够抑制暗电流的增加和功耗的固态图像传感器,并且抑制电子的传送效率的降低。 固态图像传感器包括电荷存储区域,该电荷存储区域包括具有来自半导体衬底的主表面的第一深度的第一导电型第一杂质区域,具有比第一深度大的第二深度的第一导电类型第二杂质区域 并且杂质浓度低于第一杂质区域的杂质浓度,以及第三导电型第三杂质区域,其具有大于第一深度的第三深度并且小于第二深度。

    SOLID STATE IMAGE PICKUP DEVICE, METHOD OF MANUFACTURING THE SAME, IMAGE PICKUP DEVICE, AND ELECTRONIC DEVICE
    9.
    发明申请
    SOLID STATE IMAGE PICKUP DEVICE, METHOD OF MANUFACTURING THE SAME, IMAGE PICKUP DEVICE, AND ELECTRONIC DEVICE 审中-公开
    固态图像拾取装置,其制造方法,图像拾取装置和电子装置

    公开(公告)号:US20100230583A1

    公开(公告)日:2010-09-16

    申请号:US12729295

    申请日:2010-03-23

    Abstract: A solid state image pickup device includes a pixel section defined by unit pixels arrayed in line and row directions of a semiconductor substrate. Each of the unit pixels includes a photoelectric transducer that is formed on the semiconductor substrate and converts incident light into a signal charge, a waveguide that is formed above the photoelectric transducer and guides the incident light to the photoelectric transducer, and a microlens that is formed above the waveguide and guides the incident light to an end of light incident side of the waveguide. The waveguide has a columnar body with a constant cross section from the end of light incident side to an end of light exit side, and is arranged such that a center of rays of the incident light incident from the microlens on the end of light incident side of the waveguide is aligned with a central axis of the waveguide.

    Abstract translation: 固态图像拾取装置包括由半导体衬底的行方向和行方向排列的单位像素限定的像素部。 每个单位像素包括形成在半导体衬底上并将入射光转换成信号电荷的光电变换器,形成在光电变换器上方并将入射光引导到光电变换器的波导和形成的微透镜 在波导上方并将入射光引导到波导的光入射侧的一端。 波导管具有从光入射侧的端部到光出射侧的端部具有恒定横截面的柱状体,并且被布置成使得从入射侧的微透镜入射的入射光的入射光的中心 的波导与波导的中心轴对准。

    Solid state image capturing device and control method thereof
    10.
    发明申请
    Solid state image capturing device and control method thereof 审中-公开
    固体摄像装置及其控制方法

    公开(公告)号:US20060028570A1

    公开(公告)日:2006-02-09

    申请号:US11190584

    申请日:2005-07-27

    CPC classification number: H04N9/045 H04N5/347 H04N5/3725

    Abstract: A solid state image capturing device comprises a vertical transfer section including a plurality of vertical shift registers which vertically transfer information charges generated in a plurality of light-receiving pixels arranged in a matrix form, and a horizontal transfer section including a horizontal shift register in which each bit thereof is coupled to each of the vertical shift registers of the vertical transfer section, wherein the information charges corresponding to a plurality of light-receiving pixels transferred by the horizontal shift register are added and then horizontally transferred. Thus, transfer time of the information charges during horizontal transfer can be reduced.

    Abstract translation: 固态图像捕获装置包括:垂直传输部分,包括垂直传输以矩阵形式布置的多个光接收像素中生成的信息电荷的多个垂直移位寄存器;以及水平传送部分,包括水平移位寄存器,其中 其每一位耦合到垂直传送部分的每个垂直移位寄存器,其中对应于由水平移位寄存器传送的多个光接收像素的信息电荷被相加,然后水平传送。 因此,可以减少在水平传送期间的信息费用的传送时间。

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