Abstract:
In cases where AGP driving is applied to a CCD solid-state image sensor having a horizontal overflow drain structure, a problem arises in that the charges overflow into the second channel regions (8) from the overflow drain regions (14), and noise is superimposed on the information charges. The CCD solid-state image sensor has a plurality of first channel regions (4) that are disposed parallel to each other, overflow drain regions (14) that are disposed between neighboring first channel regions (4), a plurality of separation regions (12) that are disposed between the first channel regions (4) and overflow drain regions (14), and a plurality of first transfer electrodes (10) that are disposed parallel to each other over the plurality of first channel regions in the direction perpendicular to the first channel regions (4). In other to solve the problem described above, the CCD solid-state image sensor further comprises second channel regions (9) which are disposed in positions corresponding to the regions where the first channel regions (4) and specified first transfer electrodes (10) intersect, and which have a higher concentration than the first channel regions (4), and the overflow drain regions (14) adjacent to the second channel regions (8) have protruding parts (18) that protrude toward the second channel regions (8).
Abstract:
A mixing of color that follows mixing of horizontally adjoining information charges corresponding to different colors is minimized during an operation for adding information charges of a plurality of pixels in a horizontal direction and during a high-speed horizontal transfer operation in a horizontal CCD shift register of a CCD image sensor. An impurity is used for forming barrier regions having a shallow channel potential among the barrier regions and storage regions that constitute transfer stages of the horizontal CCD shift register. The concentration of the impurity is established separately in a main portion, which is composed of transfer stages that are connected to the output ends of vertical CCD shift registers, and in a dummy portion, which connects the main portion with an output section and has a width that gradually decreases towards the output section. The barrier potential is therefore also established separately in the main portion and the dummy portion. The barrier potential is set to be high in the main portion, and the overflow of information charges into adjoining wells is minimized during the addition operation. The transfer length may be longer in the dummy portion, in which the barrier potential is limited and the fringe electric field is increased, ensuring efficient transfer during high-speed horizontal transfer.
Abstract:
A valve actuating mechanism for an internal combustion engine in which a rotatable cam has its camming surface disposed to slide on a cam slipper surface of a rocker arm to thereby open and close an intake valve (or exhaust valve) of the engine by rocking motion of the rocker arm. The dimensions, shapes, and relative positions of the rotatable cam and the rocker arm are so designed as to satisfy a condition of V.sub.C +V.sub.F >0, where V.sub.C represents the velocity of movement of a contact point on the camming surface at which the camming surface slides on the cam slipper surface, and V.sub.F the velocity of movement of the contact point on the cam slipper surface at which the cam slipper surface slides on the camming surface.
Abstract:
In an image pickup portion of a frame transfer CCD image sensor, a constitution that inhibits color mixing from occurring between light-sensitive pixels adjacent along a vertical CCD shift register channel is provided. A protrusion extending on the channel is formed at a clock wiring formed on a channel stop of the vertical CCD shift register with an wiring layer having the light-shielding property. When the protrusion portion is disposed at a boundary of light-sensitive pixels in the channel, a non-light-shielding portion generated at the boundary can be suppressed. The protrusions are disposed so as to alternately protrude from the clock wirings on both sides of the channel.
Abstract:
An imaging system, capable of reducing blooming in a solid-state imaging device and improving image sensitivity, comprises an imaging section which has at least three transfer electrodes and is continuously arranged with pixels for producing information charges in response to the light from the outside, wherein the information charges are stored and transferred using potential wells formed by potentials applied to the transfer electrodes and, during image capture, one of the transfer electrodes is maintained in an ON state and at least another one of the transfer electrodes is alternately switched between an ON state and an OFF state. It is more preferable to average the amount of generated dark current under the transfer electrodes by switching the transfer electrodes between an ON state and an OFF state for image capture. This provides restraint of a difference in the amount of generated dark current between pixels, thus reducing image graininess.
Abstract:
There is provided a charge transfer element, comprising a shift register, with a plurality of transfer electrodes, for transmitting information charge by application of clock pulses to the transfer electrodes, and an output section for outputting an output voltage according to information charge sequentially transferred and output from the shift register, a driver for applying clock pulses to the transfer electrodes at a specified timing, and a sampling circuit for sampling output voltage output from the output section, wherein the sampling circuit samples the output voltage, avoiding points in time where the clock pulses applied to the transfer electrodes change. In this way, it is possible to reduce noise that is superimposed on an output signal of a solid state imaging device.
Abstract:
A solid-state image sensor capable of suppressing increase of a dark current and a power consumption, and suppressing reduction of a transfer efficiency of electrons is provided. The solid-state image sensor comprises a charge storage region including a first conductive type first impurity region that has a first depth from a main surface of a semiconductor substrate, a first conductive type second impurity region that has a second depth larger than the first depth and an impurity concentration lower than an impurity concentration of the first impurity region, and a first conductive type third impurity region that has a third depth larger than the first depth and smaller than the second depth.
Abstract:
The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate 12 and multiple photoelectric converters 40 that are formed on the substrate 12, an insulating film 21 forms an embedded element separating unit 19. The element separating unit 19 is configured of an insulating film 20 having a fixed charge that is formed so as to coat the inner wall face of a groove portion 30, within the groove portion 30 which is formed in the depth direction from the light input side of the substrate 12.
Abstract:
A solid state image pickup device includes a pixel section defined by unit pixels arrayed in line and row directions of a semiconductor substrate. Each of the unit pixels includes a photoelectric transducer that is formed on the semiconductor substrate and converts incident light into a signal charge, a waveguide that is formed above the photoelectric transducer and guides the incident light to the photoelectric transducer, and a microlens that is formed above the waveguide and guides the incident light to an end of light incident side of the waveguide. The waveguide has a columnar body with a constant cross section from the end of light incident side to an end of light exit side, and is arranged such that a center of rays of the incident light incident from the microlens on the end of light incident side of the waveguide is aligned with a central axis of the waveguide.
Abstract:
A solid state image capturing device comprises a vertical transfer section including a plurality of vertical shift registers which vertically transfer information charges generated in a plurality of light-receiving pixels arranged in a matrix form, and a horizontal transfer section including a horizontal shift register in which each bit thereof is coupled to each of the vertical shift registers of the vertical transfer section, wherein the information charges corresponding to a plurality of light-receiving pixels transferred by the horizontal shift register are added and then horizontally transferred. Thus, transfer time of the information charges during horizontal transfer can be reduced.