发明授权
- 专利标题： Semiconductor apparatus having first and second gate electrodes
- 专利标题（中）： 具有第一和第二栅电极的半导体装置
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申请号： US10913478申请日： 2004-08-09
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公开(公告)号： US07119385B2公开(公告)日： 2006-10-10
- 发明人: Koji Usuda , Shinichi Takagi
- 申请人： Koji Usuda , Shinichi Takagi
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2002-220031 20020729
- 主分类号： H01L27/148
- IPC分类号： H01L27/148 ; H01L29/768
摘要：
A semiconductor apparatus includes a substrate, a buffer layer made of a monocrystal semiconductor material and formed on the substrate, a strained-Si layer formed on the buffer layer and having a lattice constant different from that of the buffer layer, a monocrystal insulating film formed on the strained-Si layer and made of a material having a rare earth structure with a lattice constant different from that of Si, and an electrode formed on the insulating film.
公开/授权文献
- US20050009282A1 Semiconductor apparatus 公开/授权日：2005-01-13
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