公开(公告)号：US5445676A

公开(公告)日：1995-08-29

申请号：US321745

申请日：1994-10-12

申请人： Mikio Takagi

发明人： Mikio Takagi

IPC分类号： C23C16/46 ,  C23C16/54 ,  C30B31/12 ,  F27B17/00 ,  F27D3/00 ,  H01L21/00 ,  C23C16/00

CPC分类号： H01L21/67115 ,  C23C16/46 ,  C23C16/54 ,  C30B31/12 ,  F27B17/0025 ,  F27D2003/0075 ,  Y10T29/41

摘要： A wafer(s) for producing semiconductor devices is subjected to heat treatment in a vertical thermal reactor, which is provided with an electric heating means setting a first temperature and another electric heating means setting a second temperature higher than the first temperature. The wafer(s) is moved upwards and is subjected to a treatment in the second region of the vertical thermal reactor; and, is reverted to the first region. Rapid thermal processing of 6 or 8 inch wafer(s) is possible without causing slip lines.

摘要翻译： 用于制造半导体器件的晶片在垂直热反应器中进行热处理，所述立式热反应器设置有设定第一温度的电加热装置和设置高于第一温度的第二温度的另一电加热装置。 将晶片向上移动并在垂直热反应器的第二区域中进行处理; 并被恢复到第一个地区。 6或8英寸晶圆的快速热处理是可能的，而不会导致滑移线。

公开(公告)号：US5444217A

公开(公告)日：1995-08-22

申请号：US7981

申请日：1993-01-21

申请人： Gary M. Moore ,  Katsuhito Nishikawa

发明人： Gary M. Moore ,  Katsuhito Nishikawa

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/48 ,  C23C16/54 ,  C30B25/02 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  C30B31/12 ,  C30B31/14 ,  F27B5/04 ,  F27B5/14 ,  F27B5/16 ,  F27B5/18 ,  F27D11/00 ,  F27D11/02 ,  H01L21/00 ,  H01L21/205 ,  H01L21/22 ,  H01L21/26 ,  H01L21/324 ,  H01L21/683 ,  H01L21/687 ,  H05B3/00

CPC分类号： H01L21/68735 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45565 ,  C23C16/45589 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/481 ,  C23C16/54 ,  C30B25/02 ,  C30B25/10 ,  C30B25/105 ,  C30B25/12 ,  C30B25/14 ,  C30B31/12 ,  C30B31/14 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785 ,  H05B3/0047

摘要： A novel rapid thermal process (RTP) reactor processes a multiplicity of wafers or a single large wafer, e.g., 200 mm (8 inches), 250 mm (10 inches), 300 mm (12 inches) diameter wafers, using either a single or dual heat source. The wafers or wafer are mounted on a rotatable susceptor supported by a susceptor support. A susceptor position control rotates the wafers during processing and raises and lowers the susceptor to various positions for loading and processing of wafers. A heat controller controls either a single heat source or a dual heat source that heats the wafers to a substantially uniform temperature during processing. A gas flow controller regulates flow of gases into the reaction chamber. Instead of the second heat source, a passive heat distribution is used, in one embodiment, to achieve a substantially uniform temperature throughout the wafers. Further, a novel susceptor is used that includes a silicon carbide cloth enclosed in quartz.

公开(公告)号：US5414244A

公开(公告)日：1995-05-09

申请号：US230793

申请日：1994-04-21

申请人： Issei Imahashi

发明人： Issei Imahashi

IPC分类号： H01L21/205 ,  C30B31/12 ,  H01L21/22 ,  H01L21/26 ,  H01L21/31 ,  H01L21/324 ,  H05B1/02

CPC分类号： C30B31/12

摘要： A heat treatment apparatus according to the present invention includes a process tube which heat rays are able to penetrate, a holding member for holding an object to be treated in the process tube, two temperature regulation plates arranged opposite and close to the object held by the holding member, for regulating an amount of heat rays reaching to the object, a heating unit for heating the object in the process tube, a cooling unit for cooling the object heated by the heating unit, a temperature sensor for sensing temperatures of the two temperature regulation plates, and a controller for controlling the heating unit based on the temperature profile acquired in advance and the temperatures detected by the temperature sensor.

摘要翻译： 根据本发明的热处理设备包括能够穿透热射线的处理管，用于保持处理管中待处理物体的保持构件，与由所述处理管保持的物体相对并靠近的两个温度调节板 用于调节到达物体的热射线的量，用于加热处理管中的物体的加热单元，用于冷却由加热单元加热的物体的冷却单元，用于感测两个温度的温度的温度传感器 调节板，以及基于预先获取的温度分布和由温度传感器检测到的温度来控制加热单元的控制器。

公开(公告)号：US5405444A

公开(公告)日：1995-04-11

申请号：US151082

申请日：1993-11-12

申请人： Mehrdad M. Moslehi

发明人： Mehrdad M. Moslehi

IPC分类号： H01L21/205 ,  C23C16/48 ,  C30B25/10 ,  C30B31/12 ,  C30B31/16 ,  H01L21/00 ,  H01L21/26 ,  H01L21/31 ,  H01L21/324 ,  C23C16/00

CPC分类号： H01L21/67017 ,  C23C16/481 ,  C30B25/105 ,  C30B31/12 ,  C30B31/16 ,  Y10S438/905 ,  Y10S438/909

摘要： A process chamber purge module (56) is provided, including a stack module (60) and a process chamber liner (62). The stack module comprises a plurality of quartz plates (100, 110, and 116) having flow apertures to permit radial and axial flow of a purge gas to the backside of a semiconductor wafer (18). The process chamber liner (62) isolates the process chamber walls from the process chamber process environment by flowing between the liner and the walls a portion of the purge gas. Process chamber liner (62) comprises a quartz cylindrical collar that operates to decouple the process chamber (16) process environment (20) from the process chamber collar walls (42). The stack module (60) decouples the process chamber optical/vacuum quartz window (64) from the semiconductor wafer (18) during a heated semiconductor wafer fabrication process. By flowing purge gas to the backside of the semiconductor wafer (18), the present invention prevents reactive process gas interaction with the semiconductor wafer backside.

摘要翻译： 提供了一种处理室净化模块（56），其包括堆叠模块（60）和处理室衬垫（62）。 堆叠模块包括多个具有流动孔的石英板（100,110和116），以允许吹扫气体向半导体晶片（18）的背面径向和轴向流动。 处理室衬套（62）通过在衬套和壁之间流动吹扫气体的一部分来隔离处理室壁与处理室工艺环境。 处理室衬套（62）包括石英圆柱形套环，其操作以将处理室（16）处理环境（20）与处理室套环壁（42）分离。 堆叠模块（60）在加热的半导体晶片制造过程期间将处理室光学/真空石英窗口（64）与半导体晶片（18）分离。 通过将清洗气体流到半导体晶片（18）的背面，本发明防止与半导体晶片背面的反应性工艺气体相互作用。

公开(公告)号：US5401686A

公开(公告)日：1995-03-28

申请号：US909600

申请日：1992-07-07

申请人： Hiromi Kiyose

发明人： Hiromi Kiyose

IPC分类号： H01L21/22 ,  C30B31/12 ,  D21H27/00 ,  H01L21/223

CPC分类号： C30B31/12 ,  H01L21/223 ,  Y10S148/038

摘要： The temperature of the front heater is set to a higher value than the set temperature of the center heater and the temperature of the rear heater is set to a lower value than the set temperature of the center heater to thereby provide such a temperature gradient that the temperature of a center heater region gradually rises from the rear side toward the front side and the impurity diffusion is accelerated under the temperature gradient, whereby it is possible to compensate for the decrease in the quantity of the diffused impurity caused by the lowering of the impurity concentration of the impurity gas gradually from the rear side toward the front side, so that the impurity is uniformly diffused into the wafers located in the core pipe.

摘要翻译： 前加热器的温度被设定为比中心加热器的设定温度更高的值，并且后加热器的温度被设定为比中心加热器的设定温度低的值，从而提供这样的温度梯度，使得 中心加热器区域的温度从后侧朝向前侧逐渐上升，并且在温度梯度下杂质扩散加速，由此可以补偿由于杂质的降低引起的扩散杂质的量的减少 杂质气体从后侧朝向前侧逐渐浓缩，从而杂质均匀地扩散到位于芯管中的晶片中。

公开(公告)号：US5329095A

公开(公告)日：1994-07-12

申请号：US44463

申请日：1993-04-09

申请人： Wataru Okase

发明人： Wataru Okase

IPC分类号： H01L21/205 ,  C23C16/46 ,  C30B25/10 ,  C30B25/14 ,  C30B31/12 ,  H01L21/00 ,  H01L21/22 ,  H01L21/31

CPC分类号： H01L21/67103 ,  C23C16/46 ,  C30B25/10 ,  C30B25/14 ,  C30B31/12

摘要： A heater body or a circulation path for a heating gas is provided in an inner surface of a lid body that opens and closes an opening portion of a process tube. The circulation path is formed in such a manner that it passes through a gap between the lid body and the shaft of a rotation mechanism that rotates a quartz boat holding semiconductor wafers within the process tube. A heating gas at a temperature at least as high as the vaporization temperature of reaction products is made to circulate through this circulation path. Since the inner surfaces of the lid body are heated, reaction products do not adhere to the inner walls of the lid body and the lower portions of the process tube. Since there no source of contamination is generated thereby, the semiconductor wafers and the clean room are not contaminated. Since the circulation gas is made to flow in the reverse direction in the gap, there is no leakage of reaction gas therefrom. Thus the clean room is not contaminated and semiconductor wafers can be fabricated with a good yield.

摘要翻译： 用于加热气体的加热器主体或循环路径设置在打开和关闭处理管的开口部分的盖体的内表面中。 循环路径形成为使得其通过旋转机构的盖体和轴之间的间隙，该旋转机构使保持处理管内的半导体晶片的石英舟旋转。 使至少与反应产物的蒸发温度一样高的加热气体通过该循环路径循环。 由于盖体的内表面被加热，所以反应产物不粘附到盖体的内壁和处理管的下部。 由于不产生污染源，所以半导体晶片和洁净室不被污染。 由于循环气体在间隙中沿相反方向流动，所以没有反应气体的泄漏。 因此，洁净室不被污染，并且可以以良好的产率制造半导体晶片。

公开(公告)号：US5201653A

公开(公告)日：1993-04-13

申请号：US767588

申请日：1991-09-30

申请人： Moriyoshi Hasegawa ,  Yoshio Matsumura ,  Yoshiteru Fukutomi

发明人： Moriyoshi Hasegawa ,  Yoshio Matsumura ,  Yoshiteru Fukutomi

IPC分类号： C30B31/12 ,  F27B17/00 ,  H01L21/00

CPC分类号： H01L21/67103 ,  C30B31/12 ,  F27B17/0025

摘要： An apparatus for heat-treating substrates includes a plurality of heat-treating units arranged in vertical stages, and at least one hollow column for supporting the heat-treating units. Each heat-treating unit has an exhaust line communicating with the column to exhaust gases from the heat-treating units through the column by suction.

摘要翻译： 用于热处理基板的设备包括多个垂直设置的热处理单元和用于支撑热处理单元的至少一个空心柱。 每个热处理单元具有与柱连通的排气管线，以通过抽吸从热处理单元排出气体。

公开(公告)号：US5155336A

公开(公告)日：1992-10-13

申请号：US781632

申请日：1991-10-24

申请人： Christian M. Gronet ,  James F. Gibbons

发明人： Christian M. Gronet ,  James F. Gibbons

IPC分类号： C23C16/48 ,  C30B25/10 ,  C30B31/12 ,  C30B31/18 ,  F27B17/00 ,  F27D99/00 ,  G01J5/00 ,  G01J5/06 ,  H01L21/00 ,  H02G3/04

CPC分类号： F27D99/0006 ,  C23C16/481 ,  C23C16/482 ,  C30B25/10 ,  C30B25/105 ,  C30B31/12 ,  C30B31/18 ,  F27B17/0025 ,  F27D99/0033 ,  G01J5/0003 ,  G01J5/06 ,  H01L21/67115 ,  H02G3/0425

摘要： A rapid thermal heating apparatus in which lamps are disposed in a plurality of light pipes arranged to illuminate and supply heat to a substrate. The light pipes are positioned so that the illumination patterns overlap. The energy supplied to the lamps is controlled to provide a predetermined heating pattern to the substrate. A liquid cooled window cooperates with the light pipes to transmit energy to a wafer disposed in an evacuated chamber.

摘要翻译： 一种快速热加热装置，其中灯被设置在多个光管中，所述多个光管被布置成照亮并向衬底供应热量。 光管被定位成使得照明图案重叠。 控制提供给灯的能量以向衬底提供预定的加热图案。 液体冷却的窗口与光管协作以将能量传递到设置在抽真空室中的晶片。

公开(公告)号：US5093557A

公开(公告)日：1992-03-03

申请号：US352510

申请日：1989-05-16

申请人： Charles K. C. Lok ,  August O. Westner

发明人： Charles K. C. Lok ,  August O. Westner

IPC分类号： C23C14/54 ,  C23C16/46 ,  C30B25/10 ,  C30B31/12 ,  H05B3/26

CPC分类号： C30B25/10 ,  C23C14/541 ,  C23C16/46 ,  C30B31/12 ,  H05B3/265

摘要： Heat is provided to substrates at a step of a process by providing identical movable heating devices, one for each substrate, placing each substrate onto one of the heating devices, sequentially moving each device into a position where the step of the process can be performed on the substrate, and causing each of the devices to provide heat to the substrate at each step of the process.

摘要翻译： 通过提供相同的可移动加热装置，在每个基板上设置相同的可移动加热装置，将每个基板放置在一个加热装置上，依次将每个装置移动到可以对该步骤进行的步骤 衬底，并且使得每个器件在该工艺的每个步骤处向衬底提供热量。

公开(公告)号：US4938992A

公开(公告)日：1990-07-03

申请号：US427921

申请日：1989-10-25

申请人： Eric L. Mears

发明人： Eric L. Mears

IPC分类号： C23C14/50 ,  C30B25/10 ,  C30B31/12 ,  C30B31/22 ,  H01L21/00

CPC分类号： H01L21/67103 ,  C23C14/50 ,  C30B25/10 ,  C30B31/12 ,  C30B31/22 ,  H01L21/67069

摘要： Thermal transfer between a semiconductor wafer and a platen during vacuum processing is provided through a soft, thermally-conductive polymer layer having a thin, hard surface film. The soft polymer layer, which is preferably silicone rubber containing thermally-conductive particles, conforms to surface irregularities on the wafer and has low thermal resistance. The surface film is preferably silicon dioxide in the form of a multiplicity of flat plates integrally formed on the silicone rubber. Adherence of the wafer and of foreign matter to the polymer layer is prevented by the surface film. In addition, the underlying polymer layer is protected by the surface film. A high purity polymer layer is fabricated by evacuating the mold cavity and the resin container prior to injection of resin. The mold for the polymer layer utilizes a hard, smooth mold release surface and a resilient gasket between the platen and the mold release surface. The gasket establishes the dimensions of the polymer layer and seals the mold cavity. The surface film is formed by oxygen plasma treatment of the silcone rubber layer.

摘要翻译： 通过具有薄的硬表面膜的柔软的导热聚合物层提供真空处理期间半导体晶片和压板之间的热传递。 优选含有导热性粒子的硅橡胶的软质聚合物层与晶片上的表面凹凸一致，耐热性低。 表面膜优选是以硅橡胶一体形成的多个平板形式的二氧化硅。 通过表面膜防止晶片和异物对聚合物层的粘附。 此外，下面的聚合物层被表面膜保护。 通过在注射树脂之前抽空模腔和树脂容器来制造高纯度聚合物层。 用于聚合物层的模具利用硬的光滑的脱模表面和在压板和脱模表面之间的弹性垫圈。 垫圈建立聚合物层的尺寸并密封模腔。 表面膜由硅橡胶层的氧等离子体处理形成。