公开(公告)号：US07445672B2

公开(公告)日：2008-11-04

申请号：US11503831

申请日：2006-08-14

申请人： Tomohiko Shibata

发明人： Tomohiko Shibata

IPC分类号： C30B25/12 ,  C30B25/14

CPC分类号： C30B29/403 ,  C30B33/02 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02658

摘要： Heat treatment is conducted at a predetermined temperature of not less than 1250° C. on an underlying substrate obtained by epitaxially forming a first group-III nitride crystal on a predetermined base as an underlying layer. Three-dimensional fine irregularities resulting from crystalline islands are created on the surface of the underlying layer. A second group-III nitride crystal is epitaxially formed on the underlying substrate as a crystal layer. There are a great many fine voids interposed at the interface between the crystal layer and underlying substrate. The presence of such voids suppresses propagation of dislocations from the underlying substrate, which reduces the dislocation density in the crystal layer. As a result, the crystal layer of good crystal quality can be obtained.

摘要翻译： 在预定的基底上外延形成第一III族氮化物晶体而获得的底层基板上，在不小于1250℃的预定温度下进行热处理。 在下层的表面上产生由结晶岛产生的三维细微不规则。 第二组III族氮化物晶体作为晶体层外延形成在下面的衬底上。 在晶体层和下层衬底之间的界面处插入许多细小的空隙。 这种空隙的存在抑制位错从底层衬底的扩散，这降低了晶体层中的位错密度。 结果，可以获得具有良好晶体质量的晶体层。

公开(公告)号：USRE40163E1

公开(公告)日：2008-03-25

申请号：US11083331

申请日：2005-03-17

申请人： Yuji Hori ,  Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda

发明人： Yuji Hori ,  Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda

IPC分类号： H01L31/12

CPC分类号： H01L33/06 ,  H01L33/007 ,  H01L33/12 ,  H01L33/18

摘要： In a semiconductor light-emitting element, an underlayer is composed of a high crystallinity AlN layer having a FWHM in X-ray rocking curve of 90 seconds or below, and a first cladding layer is composed of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer.

摘要翻译： 在半导体发光元件中，底层由X射线摇摆曲线中具有FWHM的90秒以下的高结晶性AlN层构成，第一包层由n-AlGaN层构成。 发光层由由i-GaN制成的基底层和在基底层中分离的由i-AlGaInN构成的多个岛状单晶部分构成。

公开(公告)号：US07067847B2

公开(公告)日：2006-06-27

申请号：US10017325

申请日：2001-12-14

申请人： Tomohiko Shibata ,  Keiichiro Asai ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Keiichiro Asai ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

IPC分类号： H01L33/00

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

摘要： On a substrate made of e.g., sapphire single crystal is formed an Al underlayer having FWHM X-ray rocking curve value of 90 seconds or below. A buffer layer is formed on the AlN underlayer and has a composition of AlpGaqIn1−p−qN (0≦p≦1, 0≦y≦q). A GaN-based semiconductor layer group is formed on the buffer layer.

摘要翻译： 在由例如蓝宝石单晶制成的基板上形成FWHM X射线摇摆曲线值为90秒以下的Al底层。 在AlN底层上形成缓冲层，并且具有下列组成：在1-pq N（0 <= p < = 1，0 <= y <= q）。 在缓冲层上形成GaN基半导体层组。

公开(公告)号：US20050287774A1

公开(公告)日：2005-12-29

申请号：US11167078

申请日：2005-06-24

申请人： Tomohiko Shibata ,  Keiichiro Asai ,  Shigeaki Sumiya

发明人： Tomohiko Shibata ,  Keiichiro Asai ,  Shigeaki Sumiya

IPC分类号： C30B25/20 ,  C30B29/40 ,  H01L21/00 ,  H01L21/20 ,  H01L21/324 ,  H01L21/336

CPC分类号： C30B29/403 ,  C30B25/20 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/3245

摘要： A heating process is performed in a nitrogen atmosphere at a temperature of not less than 1650° C. upon an epitaxial substrate including a single crystal base and an upper layer made of a group-III nitride crystal and epitaxially formed on a main surface of the single crystal base. The result shows that the heating process reduces the number of pits in a top surface to produce the effect of improving the surface flatness of the group-III nitride crystal. The result also shows that the dislocation density in the group-III nitride crystal is reduced to not more than one-half the dislocation density obtained before the heat treatment.

摘要翻译： 在氮气气氛中，在包含单晶基底和由III族氮化物晶体构成的上层的外延基板上，在不低于1650℃的温度下进行加热处理，外延形成在 单晶底座。 结果表明，加热过程减少顶表面中的凹坑的数量，以产生提高III族氮化物晶体的表面平坦度的效果。 结果还表明，III族氮化物晶体中的位错密度降低到不超过热处理前获得的位错密度的一半。

公开(公告)号：US06844611B2

公开(公告)日：2005-01-18

申请号：US10247366

申请日：2002-09-20

申请人： Tomohiko Shibata ,  Shigeaki Sumiya ,  Keiichiro Asai ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Shigeaki Sumiya ,  Keiichiro Asai ,  Mitsuhiro Tanaka

IPC分类号： C30B29/38 ,  C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  H01L33/16 ,  H01L33/32 ,  H01L31/0304

CPC分类号： C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262

摘要： The crystal orientation of the main surface of a sapphire single crystal base material to constitute an epitaxial substrate is inclined from the orientation (c-axis) preferably for the orientation (m-axis) by a range within 0.02-0.3 degrees. Then, a surface nitride layer is formed at the main surface of the base material. Then, a III nitride underfilm is formed on the main surface of the base material via the surface nitride layer. The III nitride underfilm includes at least Al element, and the full width at half maximum at (101-2) reflection in X-ray rocking curve of the III nitride underfilm is 2000 seconds. The surface roughness Ra within 5 μm area is 3.5 Å.

摘要翻译： 用于构成外延基板的蓝宝石单晶基材的主表面的晶体取向优选从<0001>取向（c轴）向<1-100>取向（m轴）倾斜一个范围内 0.02-0.3度。 然后，在基材的主表面上形成表面氮化物层。 然后，通过表面氮化物层在基材的主表面上形成III族氮化物底膜。 III族氮化物底膜至少包括Al元素，并且III族氮化物底膜的X射线摇摆曲线中（101-2）反射处的半峰全宽为2000秒。 5um范围内的表面粗糙度Ra为3.5Å。

公开(公告)号：US06706620B2

公开(公告)日：2004-03-16

申请号：US10074589

申请日：2002-02-13

申请人： Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Keiichiro Asai ,  Osamu Oda

发明人： Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Keiichiro Asai ,  Osamu Oda

IPC分类号： H01L2128

CPC分类号： C30B25/02 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262

摘要： A lower region having a composition of Alx1Gax2Inx3N (x1+x2+x3=1, 0.5≦x1≦1.0) is formed through epitaxial growth by a CVD method, and subsequently, an upper region having a composition of Aly1Gay2Iny3N (y1+y2+y3=1, 0≦y1≦x1−0.1) is formed through epitaxial growth by a CVD method. A boundary face divides a given III nitride film into the lower region and the upper region and the lower and upper regions have an Al content difference of 10 atomic percent or more.

摘要翻译： 通过CVD方法的外延生长，形成具有Al x1Gax2Inx3N（x1 + x2 + x3 = 1，0.5 <= x1 <= 1.0）的组成的下部区域，随后，具有组成为Aly1Gay2Iny3N（y1 + y2 + y3 = 1,0 <= y1 <= x1-0.1）通过CVD法进行外延生长而形成。 边界面将给定的III族氮化物膜分成下部区域，上部区域和下部和上部区域的Al含量差异为10原子％以上。

公开(公告)号：US06703649B2

公开(公告)日：2004-03-09

申请号：US10147047

申请日：2002-05-17

申请人： Tomohiko Shibata ,  Keiichiro Asai ,  Osamu Oda ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Keiichiro Asai ,  Osamu Oda ,  Mitsuhiro Tanaka

IPC分类号： H01L310328

CPC分类号： H01L29/812 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/7371 ,  H01L29/7787

摘要： A semiconductor element includes a conductive SiC base having a resistivity of less than 1×105 &OHgr;cm, an underlayer made of a semiconductor nitride including at least Al element which is formed on the SiC base, and a semiconductor nitride layer group made including at least one of Al element, Ga element and In element.

摘要翻译： 半导体元件包括电阻率小于1×10 5Ω·mol·m的导电SiC基底，由形成在SiC基底上的至少包含Al元素的半导体氮化物制成的底层和至少包含至少包含Al元素的半导体氮化物层组 Al元素，Ga元素和In元素之一。

公开(公告)号：US06649288B2

公开(公告)日：2003-11-18

申请号：US09981295

申请日：2001-10-16

申请人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

IPC分类号： B32B904

CPC分类号： H01L33/32 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/16 ,  Y10T428/265

摘要： A Group III nitride film is directly grown on a crystalline substrate along the C-axis of the substrate, and includes at least Al. The Group III nitride film has a hexagonal crystal system, and the lattice constant “c” of the c-axis of the Group III nitride film and the lattice constant “a” of the crystal face perpendicular to the main surface of the substrate satisfies the relation of “C>2.636a-3.232”.

摘要翻译： III族氮化物膜沿着衬底的C轴直接生长在晶体衬底上，并且至少包括Al。 III族氮化物膜具有六方晶系，III族氮化物膜的c轴的晶格常数“c”和垂直于衬底的主表面的晶面的晶格常数“a”满足 “C> 2.636a-3.232”的关系。

公开(公告)号：US06605895B2

公开(公告)日：2003-08-12

申请号：US10097277

申请日：2002-03-15

申请人： Yuji Hori ,  Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda

发明人： Yuji Hori ,  Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda

IPC分类号： H01J6304

CPC分类号： H01J63/04 ,  H01J63/06 ,  H01L33/32 ,  H01L33/502

摘要： A light-emitting element includes a light-emitting layer including a base layer made of a first nitride semiconductor and plural island-shaped crystal portions made of a second nitride semiconductor, and an irradiation source of electron beam which is disposed so as to be opposite to the light-emitting layer. Then, electron-electron hole pairs in the light-emitting layer are excited through the irradiation of electron beam from the irradiation source, to generate and emit a light.