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公开(公告)号：US08268079B2
公开(公告)日：2012-09-18
申请号：US12058716
申请日：2008-03-30
IPC分类号： C23C16/00
CPC分类号： C23C14/564 , C23C14/14 , C23C14/568
摘要： There is provided a vacuum film deposition apparatus which forms a film on a substrate by a vacuum film deposition technique, include: substrate holding means for holding the substrate; a deposition preventing member for preventing film deposition at undesired positions within the apparatus; and contacting means for bringing the substrate or the substrate holding means and the deposition preventing member into contact with each other.
摘要翻译： 提供一种通过真空膜沉积技术在基板上形成膜的真空成膜装置，包括：保持基板的基板保持装置; 用于防止膜沉积在装置内的不期望位置的沉积防止构件; 以及用于使基板或基板保持装置和防沉积构件彼此接触的接触装置。
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公开(公告)号：US07883750B2
公开(公告)日：2011-02-08
申请号：US10774454
申请日：2004-02-10
申请人： Takao Saito , Yukinori Nakamura , Yoshimasa Kondo , Naoto Ohtake
发明人： Takao Saito , Yukinori Nakamura , Yoshimasa Kondo , Naoto Ohtake
CPC分类号： C23C16/26 , C23C16/515 , H01J2237/32
摘要： An object of the present invention is to provide a method of forming a thin film of excellent quality by generating discharge plasma using gaseous raw material including a carbon source under an atmosphere of a relatively high pressure of 100 Torr or higher. A substrate 6 is mounted on at least one of opposing electrodes 4 and 5. A pulse voltage is applied on the opposing electrodes 4 and 5 under a pressure of 100 to 1600 Torr in an atmosphere containing gaseous raw material “A” including a carbon source to generate discharge plasma. A thin film 7 is thus formed on the substrate 6. The pulse voltage has a pulse duration of 10 to 1000 nsec.
摘要翻译： 本发明的目的是提供一种通过在100托或更高的较高压力的气氛中使用包含碳源的气态原料来产生放电等离子体而形成优质品质的方法。 基板6安装在相对电极4和5中的至少一个上。在包含碳源的气态原料“A”的气氛中，在100〜1600乇的压力下，在对置电极4,5上施加脉冲电压 以产生放电等离子体。 因此，在基板6上形成薄膜7.脉冲电压的脉冲持续时间为10〜1000nsec。
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公开(公告)号：US20060035083A1
公开(公告)日：2006-02-16
申请号：US11194619
申请日：2005-08-02
申请人： Takao Saito , Yukinori Nakamura , Yoshimasa Kondo
发明人： Takao Saito , Yukinori Nakamura , Yoshimasa Kondo
CPC分类号： C23C16/515 , C23C16/26 , Y10T428/30
摘要： A substrate 6 is provided over at least one of opposing electrodes 4 and 5. A pulse voltage is applied on the opposing electrodes 4 and 5 in an atmosphere containing gaseous raw material including a carbon source to generate discharge plasma so that a thin film 7 is formed on the substrate 6. The applied pulse voltage includes positive pulse and negative pulses. The positive pulse has a pulse half value width of 1000 nsec or shorter and said negative pulse has a pulse half value width of 1000 nsec or shorter.
摘要翻译： 基板6设置在相对电极4和5中的至少一个上。 在包含碳源的气态原料的气氛中，在相对电极4和5上施加脉冲电压以产生放电等离子体，从而在基板6上形成薄膜7。 所施加的脉冲电压包括正脉冲和负脉冲。 正脉冲具有1000nsec以下的脉冲半值宽度，所述负脉冲的脉冲半值宽度为1000nsec以下。
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4.发明授权Method for fabricating a semiconducting nitride film, susceptor tray, and apparatus for fabricating a semiconducting nitride film 有权用于制造半导体氮化物膜的方法，基座托盘以及用于制造半导体氮化物膜的装置公开(公告)号：US06727164B2
公开(公告)日：2004-04-27
申请号：US10060802
申请日：2002-01-30
IPC分类号： H01L2120
CPC分类号： C23C16/4401 , C23C16/4583
摘要： In fabricating a semiconducting nitride film by a MOCVD method, a susceptor tray is employed. The susceptor tray is constructed of a base plate and an outer member detachable from the base plate. A substrate for the film to be formed upon is set in a recessed portion formed by disposing the outer member on the base plate.
摘要翻译： 在通过MOCVD方法制造半导体氮化物膜时，使用基座托盘。 基座托盘由基板和可脱离基板的外部构件构成。 将要形成的膜的基底设置在通过将外部构件设置在基板上而形成的凹部中。
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5.发明授权Method for fabricating a III nitride film, and underlayer for fabricating a III nitride film and a method for fabricating the same underlayer 有权制造III族氮化物膜的方法和用于制造III族氮化物膜的底层及其制造方法公开(公告)号：US06649493B2
公开(公告)日：2003-11-18
申请号：US10044778
申请日：2001-11-07
IPC分类号： H01L2130
CPC分类号： C30B25/18 , C23C16/0218 , C23C16/303 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/0262 , H01L21/02658
摘要： A method for fabricating a Group III nitride film is provided, including the steps of preparing a substrate, forming an underfilm and then forming the Group III nitride film on the underfilm. The underfilm is a Group III nitride comprising at least one Group III element and includes at least 50 atomic percent of elemental Al with respect to all of the Group III elements of the Group III nitride of the underfilm. The surface of the underfilm is contoured (concave-convex) and includes flat regions, and less than 50% of the underfilm surface is occupied by the flat regions.
摘要翻译： 提供了一种制造III族氮化物膜的方法，包括以下步骤：制备衬底，形成底膜，然后在底膜上形成III族氮化物膜。 底膜是包含至少一种III族元素的III族氮化物，并且相对于下膜的III族氮化物的所有III族元素包括至少50原子％的元素Al。 底膜的表面是轮廓（凹凸）并且包括平坦区域，并且小于50％的底膜表面被平坦区域占据。
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6.发明授权公开(公告)号：US06183555B2
公开(公告)日：2001-02-06
申请号：US09309515
申请日：1999-05-11
IPC分类号： C30B2300
CPC分类号： H03H3/08 , H03H9/02543
摘要： A sapphire single crystal wafer 11 having a diameter not less than two inches and having an off-angled surface which is obtained by rotating an R (1-102) surface about a [11-20] axis by a given off-angle is introduced in a CVD apparatus, and a double-layer structure of first and second aluminum single crystal layers 12 and 13 is deposited on the off-angled surface of the sapphire single crystal wafer by MOCVD. The thus deposited aluminum single crystal layer 13 has (1-210) surface. The first aluminum nitride single crystal layer 12 serves as a buffer layer and has a thickness of 5-50 nm, and the second aluminum nitride single crystal layer 13 has a thickness not less than 1 &mgr;m. The off-angle is preferably set to a value not less than ±1°, much preferably a value ±2°, more preferably a value not less than −3°, and particularly preferable to a value within a range from −2°-+10°. The thus obtained aluminum nitride single crystal layer 12, 13 has no clack formed therein, has an excellent piezo-electric property, and has a high propagating velocity for surface acoustic wave.
摘要翻译： 引入直径不小于2英寸并且具有通过以[11-20]轴旋转给定偏角将R（1-102）表面旋转获得的偏斜表面的蓝宝石单晶晶片11 在CVD装置中，通过MOCVD将第一和第二铝单晶层12和13的双层结构沉积在蓝宝石单晶晶片的偏斜表面上。 这样沉积的铝单晶层13具有（1-210）表面。 第一氮化铝单晶层12用作缓冲层，厚度为5-50nm，第二氮化铝单晶层13的厚度不小于1μm。 偏角优选设定为±1°以上，更优选±2°，更优选为-3°以上的值，特别优选为-2°〜 + 10°。 由此获得的氮化铝单晶层12,13没有形成其中的爪，具有优异的压电特性，并且具有高的表面声波传播速度。
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公开(公告)号：US06426519B1
公开(公告)日：2002-07-30
申请号：US09713547
申请日：2000-11-15
IPC分类号： H01L2978
CPC分类号： C30B25/02 , C30B25/18 , C30B29/406 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： Strip-shaped ditches are formed on a sapphire substrate as a base material. Then, the sapphire substrate is set into a CVD chamber, and an AlxGayInzN (x+y+z=1,x>0,y,z≧0)film is epitaxially grown on the sapphire substrate so as to embed the ditches by a selective lateral epitaxial growth method. As a result, the AlxGayInzN film has low dislocation density areas on at least one of the concave portions and the convex portions of the strip-shaped ditches.
摘要翻译： 在蓝宝石基板上形成条形沟槽作为基材。 然后，将蓝宝石衬底置于CVD室中，并将AlxGayInzN（x + y + z = 1，x> 0，y，z> = 0）膜外延生长在蓝宝石衬底上，以便将沟渠嵌入 选择性侧向外延生长法。 结果，AlxGayInzN膜在带状沟槽的至少一个凹部和凸部上具有低位错密度区域。
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8.发明授权公开(公告)号：US06342748B1
公开(公告)日：2002-01-29
申请号：US09431398
申请日：1999-11-01
IPC分类号： H01L4108
CPC分类号： H03H9/02543
摘要： A sapphire single crystal wafer 11 having a diameter not less than two inches and having an off-angled surface which is obtained by rotating an R (1-102) surface about an axis in a negative direction by a given off-angle not less than 2° is introduced in a CVD apparatus. While the sapphire substrate is kept at a temperature of about 950° C., a buffer layer made of gallium nitride or aluminum-gallium nitride is first deposited with an average thickness of 0.1-0.2 &mgr;m, and then an aluminum nitride single crystal layer is deposited with an average thickness not less than 2 &mgr;m. The thus obtained aluminum nitride single crystal layer does not have a significant amount of cracks, has an excellent piezoelectric property, and has a high propagating velocity.
摘要翻译： 具有直径不小于2英寸并且具有偏斜表面的蓝宝石单晶晶片11，其通过使R（1-102）表面围绕轴线在负方向上旋转不小于 在CVD装置中引入2°。 当蓝宝石衬底保持在约950℃的温度下时，首先沉积由氮化镓或氮化镓 - 氮化镓制成的缓冲层，平均厚度为0.1-0.2μm，然后将氮化铝单晶层 沉积的平均厚度不小于2μm。 由此获得的氮化铝单晶层不具有显着的裂纹，具有优异的压电性能，并且具有高的传播速度。
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9.发明授权
公开(公告)号：US5936329A
公开(公告)日：1999-08-10
申请号：US936614
申请日：1997-09-24
CPC分类号： H03H3/08 , H03H9/02543
摘要： A sapphire single crystal wafer 11 having a diameter not less than two inches and having an off-angled surface which is obtained by rotating an R (1-102) surface about a �11-20! axis by a given off-angle is introduced in a CVD apparatus, and a double-layer structure of first and second aluminum single crystal layers 12 and 13 is deposited on the off-angled surface of the sapphire single crystal wafer by MOCVD. The thus deposited aluminum single crystal layer 13 has (1-210) surface. The first aluminum nitride single crystal layer 12 serves as a buffer layer and has a thickness of 5-50 nm, and the second aluminum nitride single crystal layer 13 has a thickness not less than 1 .mu.m. The off-angle is preferably set to a value not less than .+-.1.degree., much preferably a value .+-.2.degree., more preferably a value not less than -3.degree., and particularly preferable to a value within a range from -2.degree.-+10.degree.. The thus obtained aluminum nitride single crystal layer 12, 13 has no clack formed therein, has an excellent piezo-electric property, and has a high propagating velocity for surface acoustic wave.
摘要翻译： 引入直径不小于2英寸并且具有通过以[11-20]轴旋转给定偏角将R（1-102）表面旋转获得的偏斜表面的蓝宝石单晶晶片11 在CVD装置中，通过MOCVD将第一和第二铝单晶层12和13的双层结构沉积在蓝宝石单晶晶片的偏斜表面上。 这样沉积的铝单晶层13具有（1-210）表面。 第一氮化铝单晶层12用作缓冲层，厚度为5-50nm，第二氮化铝单晶层13的厚度不小于1μm。 偏角优选设定为不小于+/- 1°，更优选为+/- 2°的值，更优选为不小于-3°的值，特别优选为 -2° - + 10°。 由此获得的氮化铝单晶层12,13没有形成其中的爪，具有优异的压电特性，并且具有高的表面声波传播速度。
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公开(公告)号：US3983963A
公开(公告)日：1976-10-05
申请号：US584048
申请日：1975-06-05
申请人： Yukinori Nakamura
发明人： Yukinori Nakamura
IPC分类号： F16F7/12
CPC分类号： F16F7/123
摘要： A sheet formed with a regular series of angularly oriented panels which deforms uniformly in response to an applied force.
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