公开(公告)号：US07067847B2

公开(公告)日：2006-06-27

申请号：US10017325

申请日：2001-12-14

申请人： Tomohiko Shibata ,  Keiichiro Asai ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Keiichiro Asai ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

IPC分类号： H01L33/00

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

摘要： On a substrate made of e.g., sapphire single crystal is formed an Al underlayer having FWHM X-ray rocking curve value of 90 seconds or below. A buffer layer is formed on the AlN underlayer and has a composition of AlpGaqIn1−p−qN (0≦p≦1, 0≦y≦q). A GaN-based semiconductor layer group is formed on the buffer layer.

摘要翻译： 在由例如蓝宝石单晶制成的基板上形成FWHM X射线摇摆曲线值为90秒以下的Al底层。 在AlN底层上形成缓冲层，并且具有下列组成：在1-pq N（0 <= p < = 1，0 <= y <= q）。 在缓冲层上形成GaN基半导体层组。

公开(公告)号：US06649288B2

公开(公告)日：2003-11-18

申请号：US09981295

申请日：2001-10-16

申请人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

IPC分类号： B32B904

CPC分类号： H01L33/32 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/16 ,  Y10T428/265

摘要： A Group III nitride film is directly grown on a crystalline substrate along the C-axis of the substrate, and includes at least Al. The Group III nitride film has a hexagonal crystal system, and the lattice constant “c” of the c-axis of the Group III nitride film and the lattice constant “a” of the crystal face perpendicular to the main surface of the substrate satisfies the relation of “C>2.636a-3.232”.

摘要翻译： III族氮化物膜沿着衬底的C轴直接生长在晶体衬底上，并且至少包括Al。 III族氮化物膜具有六方晶系，III族氮化物膜的c轴的晶格常数“c”和垂直于衬底的主表面的晶面的晶格常数“a”满足 “C> 2.636a-3.232”的关系。

公开(公告)号：US06815867B2

公开(公告)日：2004-11-09

申请号：US09997997

申请日：2001-11-30

申请人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

IPC分类号： H01L4108

CPC分类号： H03H9/02543 ,  Y10T29/42

摘要： A base material made of C-faced sapphire single crystal is set on a susceptor installed in a reactor arranged horizontally. Then, a trimethyl-aluminum and an ammonia are introduced as raw material gases into the reactor and supplied onto the substrate, to form an AlN film. In this case, the temperature of the base material is set to 1100° C. or over, and the ratio (V raw material gas/III raw material gas) is set to 800 or below, and the forming pressure is set within a range of 7-17 Torr. As a result, the crystallinity of the AlN film is developed to 90 arcsec or below in FWHM of X-ray rocking curve, and the surface flatness of the AlN film is developed to 20 Å or below. Therefore, a substrate composed of the base material and the AlN film is preferably usable for an acoustic surface wave device, and if the substrate is employed, the deviation from the theoretical propagation velocity is set to 1.5 m/sec or below.

摘要翻译： 将由C面蓝宝石单晶构成的基材设置在安装在水平排列的反应器中的基座上。 然后，将三甲基铝和氨作为原料气体引入反应器中并供给到基板上，形成AlN膜。 在这种情况下，将基材的温度设定为1100℃以上，将原料气体/ III原料气体的比率设定为800以下，将成形压力设定在 7-17 Torr。 结果，在X射线摇摆曲线的FWHM中，AlN膜的结晶度显现为90弧秒以下，AlN膜的表面平坦度显现为20以下。 因此，由基材和AlN膜构成的基板优选用于声表面波器件，如果使用基板，则与理论传播速度的偏差设定为1.5m / sec以下。

公开(公告)号：US06759715B2

公开(公告)日：2004-07-06

申请号：US10042949

申请日：2002-01-09

申请人： Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda ,  Yukinori Nakamura

发明人： Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda ,  Yukinori Nakamura

IPC分类号： H01L2972

CPC分类号： C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262

摘要： A III nitride buffer film including at least Al element and having a screw-type dislocation density of 1×108/cm2 or less is formed on a base made from a sapphire single crystal, etc., to fabricate an epitaxial base substrate. Then, a III nitride underfilm is formed on the III nitride buffer film, to fabricate an epitaxial substrate.

摘要翻译： 在由蓝宝石单晶等制成的基底上形成至少包含Al元素并且具有1×10 8 / cm 2以下的螺旋型位错密度的III族氮化物缓冲膜，以制造外延基底 基质。 然后，在III族氮化物缓冲膜上形成III族氮化物底膜，制造外延衬底。

公开(公告)号：US06426519B1

公开(公告)日：2002-07-30

申请号：US09713547

申请日：2000-11-15

申请人： Keiichiro Asai ,  Tomohiko Shibata ,  Yukinori Nakamura

发明人： Keiichiro Asai ,  Tomohiko Shibata ,  Yukinori Nakamura

IPC分类号： H01L2978

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： Strip-shaped ditches are formed on a sapphire substrate as a base material. Then, the sapphire substrate is set into a CVD chamber, and an AlxGayInzN (x+y+z=1,x>0,y,z≧0)film is epitaxially grown on the sapphire substrate so as to embed the ditches by a selective lateral epitaxial growth method. As a result, the AlxGayInzN film has low dislocation density areas on at least one of the concave portions and the convex portions of the strip-shaped ditches.

摘要翻译： 在蓝宝石基板上形成条形沟槽作为基材。 然后，将蓝宝石衬底置于CVD室中，并将AlxGayInzN（x + y + z = 1，x> 0，y，z> = 0）膜外延生长在蓝宝石衬底上，以便将沟渠嵌入 选择性侧向外延生长法。 结果，AlxGayInzN膜在带状沟槽的至少一个凹部和凸部上具有低位错密度区域。

公开(公告)号：US06342748B1

公开(公告)日：2002-01-29

申请号：US09431398

申请日：1999-11-01

申请人： Yukinori Nakamura ,  Tomohiko Shibata

发明人： Yukinori Nakamura ,  Tomohiko Shibata

IPC分类号： H01L4108

CPC分类号： H03H9/02543

摘要： A sapphire single crystal wafer 11 having a diameter not less than two inches and having an off-angled surface which is obtained by rotating an R (1-102) surface about an axis in a negative direction by a given off-angle not less than 2° is introduced in a CVD apparatus. While the sapphire substrate is kept at a temperature of about 950° C., a buffer layer made of gallium nitride or aluminum-gallium nitride is first deposited with an average thickness of 0.1-0.2 &mgr;m, and then an aluminum nitride single crystal layer is deposited with an average thickness not less than 2 &mgr;m. The thus obtained aluminum nitride single crystal layer does not have a significant amount of cracks, has an excellent piezoelectric property, and has a high propagating velocity.

摘要翻译： 具有直径不小于2英寸并且具有偏斜表面的蓝宝石单晶晶片11，其通过使R（1-102）表面围绕轴线在负方向上旋转不小于 在CVD装置中引入2°。 当蓝宝石衬底保持在约950℃的温度下时，首先沉积由氮化镓或氮化镓 - 氮化镓制成的缓冲层，平均厚度为0.1-0.2μm，然后将氮化铝单晶层 沉积的平均厚度不小于2μm。 由此获得的氮化铝单晶层不具有显着的裂纹，具有优异的压电性能，并且具有高的传播速度。

公开(公告)号：US5936329A

公开(公告)日：1999-08-10

申请号：US936614

申请日：1997-09-24

申请人： Tomohiko Shibata ,  Yukinori Nakamura

发明人： Tomohiko Shibata ,  Yukinori Nakamura

IPC分类号： C30B29/38 ,  H01L41/09 ,  H01L41/39 ,  H03H3/08 ,  H03H9/02 ,  H03H9/25 ,  H01L41/08

CPC分类号： H03H3/08 ,  H03H9/02543

摘要： A sapphire single crystal wafer 11 having a diameter not less than two inches and having an off-angled surface which is obtained by rotating an R (1-102) surface about a �11-20! axis by a given off-angle is introduced in a CVD apparatus, and a double-layer structure of first and second aluminum single crystal layers 12 and 13 is deposited on the off-angled surface of the sapphire single crystal wafer by MOCVD. The thus deposited aluminum single crystal layer 13 has (1-210) surface. The first aluminum nitride single crystal layer 12 serves as a buffer layer and has a thickness of 5-50 nm, and the second aluminum nitride single crystal layer 13 has a thickness not less than 1 .mu.m. The off-angle is preferably set to a value not less than .+-.1.degree., much preferably a value .+-.2.degree., more preferably a value not less than -3.degree., and particularly preferable to a value within a range from -2.degree.-+10.degree.. The thus obtained aluminum nitride single crystal layer 12, 13 has no clack formed therein, has an excellent piezo-electric property, and has a high propagating velocity for surface acoustic wave.

摘要翻译： 引入直径不小于2英寸并且具有通过以[11-20]轴旋转给定偏角将R（1-102）表面旋转获得的偏斜表面的蓝宝石单晶晶片11 在CVD装置中，通过MOCVD将第一和第二铝单晶层12和13的双层结构沉积在蓝宝石单晶晶片的偏斜表面上。 这样沉积的铝单晶层13具有（1-210）表面。 第一氮化铝单晶层12用作缓冲层，厚度为5-50nm，第二氮化铝单晶层13的厚度不小于1μm。 偏角优选设定为不小于+/- 1°，更优选为+/- 2°的值，更优选为不小于-3°的值，特别优选为 -2° - + 10°。 由此获得的氮化铝单晶层12,13没有形成其中的爪，具有优异的压电特性，并且具有高的表面声波传播速度。

公开(公告)号：US06727164B2

公开(公告)日：2004-04-27

申请号：US10060802

申请日：2002-01-30

申请人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka ,  Keiichiro Asai

发明人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka ,  Keiichiro Asai

IPC分类号： H01L2120

CPC分类号： C23C16/4401 ,  C23C16/4583

摘要： In fabricating a semiconducting nitride film by a MOCVD method, a susceptor tray is employed. The susceptor tray is constructed of a base plate and an outer member detachable from the base plate. A substrate for the film to be formed upon is set in a recessed portion formed by disposing the outer member on the base plate.

摘要翻译： 在通过MOCVD方法制造半导体氮化物膜时，使用基座托盘。 基座托盘由基板和可脱离基板的外部构件构成。 将要形成的膜的基底设置在通过将外部构件设置在基板上而形成的凹部中。

公开(公告)号：US06649493B2

公开(公告)日：2003-11-18

申请号：US10044778

申请日：2001-11-07

申请人： Keiichiro Asai ,  Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

发明人： Keiichiro Asai ,  Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

IPC分类号： H01L2130

CPC分类号： C30B25/18 ,  C23C16/0218 ,  C23C16/303 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658

摘要： A method for fabricating a Group III nitride film is provided, including the steps of preparing a substrate, forming an underfilm and then forming the Group III nitride film on the underfilm. The underfilm is a Group III nitride comprising at least one Group III element and includes at least 50 atomic percent of elemental Al with respect to all of the Group III elements of the Group III nitride of the underfilm. The surface of the underfilm is contoured (concave-convex) and includes flat regions, and less than 50% of the underfilm surface is occupied by the flat regions.

摘要翻译： 提供了一种制造III族氮化物膜的方法，包括以下步骤：制备衬底，形成底膜，然后在底膜上形成III族氮化物膜。 底膜是包含至少一种III族元素的III族氮化物，并且相对于下膜的III族氮化物的所有III族元素包括至少50原子％的元素Al。 底膜的表面是轮廓（凹凸）并且包括平坦区域，并且小于50％的底膜表面被平坦区域占据。

公开(公告)号：US06183555B2

公开(公告)日：2001-02-06

申请号：US09309515

申请日：1999-05-11

申请人： Tomohiko Shibata ,  Yukinori Nakamura

发明人： Tomohiko Shibata ,  Yukinori Nakamura

IPC分类号： C30B2300

CPC分类号： H03H3/08 ,  H03H9/02543

摘要： A sapphire single crystal wafer 11 having a diameter not less than two inches and having an off-angled surface which is obtained by rotating an R (1-102) surface about a [11-20] axis by a given off-angle is introduced in a CVD apparatus, and a double-layer structure of first and second aluminum single crystal layers 12 and 13 is deposited on the off-angled surface of the sapphire single crystal wafer by MOCVD. The thus deposited aluminum single crystal layer 13 has (1-210) surface. The first aluminum nitride single crystal layer 12 serves as a buffer layer and has a thickness of 5-50 nm, and the second aluminum nitride single crystal layer 13 has a thickness not less than 1 &mgr;m. The off-angle is preferably set to a value not less than ±1°, much preferably a value ±2°, more preferably a value not less than −3°, and particularly preferable to a value within a range from −2°-+10°. The thus obtained aluminum nitride single crystal layer 12, 13 has no clack formed therein, has an excellent piezo-electric property, and has a high propagating velocity for surface acoustic wave.

摘要翻译： 引入直径不小于2英寸并且具有通过以[11-20]轴旋转给定偏角将R（1-102）表面旋转获得的偏斜表面的蓝宝石单晶晶片11 在CVD装置中，通过MOCVD将第一和第二铝单晶层12和13的双层结构沉积在蓝宝石单晶晶片的偏斜表面上。 这样沉积的铝单晶层13具有（1-210）表面。 第一氮化铝单晶层12用作缓冲层，厚度为5-50nm，第二氮化铝单晶层13的厚度不小于1μm。 偏角优选设定为±1°以上，更优选±2°，更优选为-3°以上的值，特别优选为-2°〜 + 10°。 由此获得的氮化铝单晶层12,13没有形成其中的爪，具有优异的压电特性，并且具有高的表面声波传播速度。