公开(公告)号：US10388517B2

公开(公告)日：2019-08-20

申请号：US13550115

申请日：2012-07-16

申请人： Tetsuya Ikuta ,  Jo Shimizu ,  Tomohiko Shibata

发明人： Tetsuya Ikuta ,  Jo Shimizu ,  Tomohiko Shibata

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/737 ,  H01L29/20

摘要： An epitaxial substrate for an electronic device, in which a lateral direction of the substrate is defined as a main current conducting direction and a warp configuration of the epitaxial substrate is adequately controlled, as well as a method of producing the epitaxial substrate. Specifically, the epitaxial substrate for an electron device, including: a Si single crystal substrate; and a Group III nitride laminated body formed by epitaxially growing plural Group III nitride layers on the Si single crystal substrate, wherein a lateral direction of the epitaxial substrate is defined as a main current conducting direction, is characterized in that the Si single crystal substrate is a p-type substrate having a specific resistance value of not larger than 0.01 Ω·cm.

公开(公告)号：US20120091435A1

公开(公告)日：2012-04-19

申请号：US13319910

申请日：2010-05-10

申请人： Tetsuya Ikuta ,  Jo Shimizu ,  Tomohiko Shibata ,  Ryo Sakamoto ,  Tsuneo Ito

发明人： Tetsuya Ikuta ,  Jo Shimizu ,  Tomohiko Shibata ,  Ryo Sakamoto ,  Tsuneo Ito

IPC分类号： H01L29/06 ,  H01L21/20

CPC分类号： H01L29/207 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/1075 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/7786

摘要： An epitaxial substrate for electronic devices is provided, which can improve vertical breakdown voltage and provides a method of producing the same.The epitaxial substrate includes a conductive SiC single crystal substrate, a buffer as an insulating layer on the SiC single crystal substrate, and a main laminate formed by epitaxially growing a plurality of Group III nitride layers on the buffer. Further, the buffer includes at least an initial growth layer in contact with the SiC single crystal substrate and a superlattice laminate having a superlattice multi-layer structure on the initial growth layer. The initial growth layer is made of a Ba1Alb1Gac1Ind1N material. Furthermore, the superlattice laminate is configured by alternately stacking a first layer made of a Ba2Alb2Gac2Ind2N material and a second layer made of a Ba3Alb3Gac3Ind3N material having a different band gap from the first layer.

摘要翻译： 提供了一种用于电子器件的外延衬底，其可以提高垂直击穿电压并提供其制造方法。 外延衬底包括导电SiC单晶衬底，在SiC单晶衬底上作为绝缘层的缓冲层，以及通过在缓冲器上外延生长多个III族氮化物层而形成的主层压体。 此外，缓冲器至少包括与SiC单晶衬底接触的初始生长层和在初始生长层上具有超晶格多层结构的超晶格层压体。 初始生长层由Ba1Alb1Gac1Ind1N材料制成。 此外，超晶格层叠体通过交替堆叠由Ba2Alb2Gac2Ind2N材料制成的第一层和由与第一层具有不同带隙的Ba3Alb3Gac3Ind3N材料制成的第二层而构成。

公开(公告)号：US20100219395A1

公开(公告)日：2010-09-02

申请号：US12550329

申请日：2009-08-28

申请人： Hideki Hirayama ,  Tomohiko Shibata

发明人： Hideki Hirayama ,  Tomohiko Shibata

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/06

摘要： Devices and techniques related to UV light-emitting devices that can be implemented in ways that improve the light-emitting efficiency of an UV light-emitting device using a group III nitride semiconductor.

摘要翻译： 可以以提高使用III族氮化物半导体的UV发光器件的发光效率的方式实现的与UV发光器件相关的器件和技术。

公开(公告)号：US07687824B2

公开(公告)日：2010-03-30

申请号：US11167078

申请日：2005-06-24

申请人： Tomohiko Shibata ,  Keiichiro Asai ,  Shigeaki Sumiya

发明人： Tomohiko Shibata ,  Keiichiro Asai ,  Shigeaki Sumiya

IPC分类号： H01L29/24

CPC分类号： C30B29/403 ,  C30B25/20 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/3245

摘要： A heating process is performed in a nitrogen atmosphere at a temperature of not less than 1650° C. upon an epitaxial substrate including a single crystal base and an upper layer made of a group-III nitride crystal and epitaxially formed on a main surface of the single crystal base. The result shows that the heating process reduces the number of pits in a top surface to produce the effect of improving the surface flatness of the group-III nitride crystal. The result also shows that the dislocation density in the group-III nitride crystal is reduced to not more than one-half the dislocation density obtained before the heat treatment.

摘要翻译： 在氮气气氛中，在包含单晶基底和由III族氮化物晶体构成的上层的外延基板上，在不低于1650℃的温度下进行加热处理，外延形成在 单晶底座。 结果表明，加热过程减少顶表面中的凹坑的数量，以产生提高III族氮化物晶体的表面平坦度的效果。 结果还表明，III族氮化物晶体中的位错密度降低到不超过热处理前获得的位错密度的一半。

公开(公告)号：US07575942B2

公开(公告)日：2009-08-18

申请号：US11417936

申请日：2006-05-04

申请人： Tomohiko Shibata

发明人： Tomohiko Shibata

IPC分类号： H01L21/00 ,  H01L29/93

CPC分类号： C30B29/403 ,  C30B25/02 ,  C30B25/18 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02647

摘要： An epitaxial substrate used to generate a group III nitride crystal having excellent crystal quality. An upper layer of a group III nitride is formed on a sapphire base with an off angle, and after that a heating process is performed at a temperature not lower than 1500° C., and thereby, the crystal quality of the upper layer is improved and repeating steps of which the size is greater than the height of several atomic layers are provided on the surface of the upper layer. The obtained epitaxial substrate is used as a base substrate for growing a group III nitride crystal layer. The group III nitride crystal grows in a manner of step flow, and therefore, threading dislocations from the upper layer are bent according to this growth, and are unevenly distributed as the crystal grows afterwards.

摘要翻译： 用于产生具有优异晶体质量的III族氮化物晶体的外延衬底。 在蓝宝石基底上形成有III族氮化物的上层，偏离角度，然后在不低于1500℃的温度下进行加热处理，从而提高上层的结晶品质 并且在上层的表面上设置尺寸大于几个原子层的高度的重复步骤。 将获得的外延基板用作生长III族氮化物晶体层的基底。 III族氮化物晶体以阶梯流的方式生长，因此根据该生长弯曲上层的穿透位错，随着晶体的生长而不均匀分布。

公开(公告)号：US20090017333A1

公开(公告)日：2009-01-15

申请号：US12234022

申请日：2008-09-19

申请人： Tomohiko SHIBATA

发明人： Tomohiko SHIBATA

IPC分类号： B32B9/00 ,  H01L23/48

CPC分类号： C30B29/403 ,  C30B33/02 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02658

摘要： Heat treatment is conducted at a predetermined temperature of not less than 1250° C. on an underlying substrate obtained by epitaxially forming a first group-III nitride crystal on a predetermined base as an underlying layer. Three-dimensional fine irregularities resulting from crystalline islands are created on the surface of the underlying layer. A second group-III nitride crystal is epitaxially formed on the underlying substrate as a crystal layer. There are a great many fine voids interposed at the interface between the crystal layer and underlying substrate. The presence of such voids suppresses propagation of dislocations from the underlying substrate, which reduces the dislocation density in the crystal layer. As a result, the crystal layer of good crystal quality can be obtained.

摘要翻译： 在预定的基底上外延形成第一III族氮化物晶体而获得的底层基板上，在不小于1250℃的预定温度下进行热处理。 在下层的表面上产生由结晶岛产生的三维细微不规则。 第二组III族氮化物晶体作为晶体层外延形成在下面的衬底上。 在晶体层和下层衬底之间的界面处插入许多细小的空隙。 这种空隙的存在抑制位错从底层衬底的扩散，这降低了晶体层中的位错密度。 结果，可以获得具有良好晶体质量的晶体层。

公开(公告)号：US07438761B2

公开(公告)日：2008-10-21

申请号：US11324940

申请日：2006-01-04

申请人： Tomohiko Shibata ,  Keiichiro Asai ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Keiichiro Asai ,  Mitsuhiro Tanaka

IPC分类号： C30B25/02 ,  C30B25/00

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/10 ,  Y10T117/1008

摘要： A hydrogen chloride gas and an ammonia gas are introduced with a carrier gas into a reactor in which a substrate and at least an aluminum metallic material through conduits. Then, the hydrogen gas and the ammonia gas are heated by heaters, and thus, a III-V nitride film including at least Al element is epitaxially grown on the substrate by using a Hydride Vapor Phase Epitaxy method. The whole of the reactor is made of an aluminum nitride material which does not suffer from the corrosion of an aluminum chloride gas generated by the reaction of an aluminum metallic material with a hydrogen chloride gas.

摘要翻译： 将氯化氢气体和氨气与载气一起引入反应器中，在反应器中通过导管将基底和至少一种铝金属材料。 然后，通过加热器加热氢气和氨气，因此，使用氢化物​​气相外延法在基板上外延生长至少包含Al元素的III-V族氮化物膜。 整个反应器由氮化铝材料制成，其不会遭受铝金属材料与氯化氢气体的反应产生的氯化铝气体的腐蚀。

公开(公告)号：US20080233721A1

公开(公告)日：2008-09-25

申请号：US12051138

申请日：2008-03-19

申请人： Kei Kosaka ,  Shigeaki Sumiya ,  Tomohiko Shibata

发明人： Kei Kosaka ,  Shigeaki Sumiya ,  Tomohiko Shibata

IPC分类号： H01L21/205

CPC分类号： H01L21/0262 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254

摘要： There is provided a method for preparing an AlGaN crystal layer having an excellent surface flatness. A buffer layer effective in stress relaxation is formed on a template substrate having a surface layer that is flat at a substantially atomic level and to which in-plane compressive stress is applied, and an AlGaN layer is formed on the buffer layer, so that an AlGaN layer can be formed that is flat at a substantially atomic level. Particularly when the surface layer of the template substrate includes a first AlN layer, a second AlN layer may be formed thereon at a temperature of 600° C. or lower, while a mixed gas of TMA and TMG is supplied in a TMG/TMA mixing ratio of 3/17 or more to 6/17 or less, so that a buffer layer effective in stress relaxation the can be formed in a preferred manner.

摘要翻译： 提供了具有优异的表面平坦度的制备AlGaN晶体层的方法。 在具有表面层的模板基板上形成有效应力松弛的缓冲层，该表面层基本上是原子水平的平面并且施加面内的压缩应力，并且在缓冲层上形成AlGaN层， AlGaN层可以形成为基本上原子水平的平坦。 特别是当模板衬底的表面层包括第一AlN层时，可以在600℃或更低的温度下在其上形成第二AlN层，而在TMG / TMA混合中提供TMA和TMG的混合气体 比例为3/17以上至6/17以下，可以优选形成有效应力松弛的缓冲层。

公开(公告)号：US20070042571A1

公开(公告)日：2007-02-22

申请号：US11503831

申请日：2006-08-14

申请人： Tomohiko Shibata

发明人： Tomohiko Shibata

IPC分类号： H01L21/20

CPC分类号： C30B29/403 ,  C30B33/02 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02658

摘要： Heat treatment is conducted at a predetermined temperature of not less than 1250° C. on an underlying substrate obtained by epitaxially forming a first group-III nitride crystal on a predetermined base as an underlying layer. Three-dimensional fine irregularities resulting from crystalline islands are created on the surface of the underlying layer. A second group-III nitride crystal is epitaxially formed on the underlying substrate as a crystal layer. There are a great many fine voids interposed at the interface between the crystal layer and underlying substrate. The presence of such voids suppresses propagation of dislocations from the underlying substrate, which reduces the dislocation density in the crystal layer. As a result, the crystal layer of good crystal quality can be obtained.

摘要翻译： 在预定的基底上外延形成第一III族氮化物晶体而获得的底层基板上，在不小于1250℃的预定温度下进行热处理。 在下层的表面上产生由结晶岛形成的三维细微不规则。 第二组III族氮化物晶体作为晶体层外延形成在下面的衬底上。 在晶体层和下层衬底之间的界面处插入许多细小的空隙。 这种空隙的存在抑制位错从底层衬底的扩散，这降低了晶体层中的位错密度。 结果，可以获得具有良好晶体质量的晶体层。

公开(公告)号：US06815867B2

公开(公告)日：2004-11-09

申请号：US09997997

申请日：2001-11-30

申请人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

IPC分类号： H01L4108

CPC分类号： H03H9/02543 ,  Y10T29/42

摘要： A base material made of C-faced sapphire single crystal is set on a susceptor installed in a reactor arranged horizontally. Then, a trimethyl-aluminum and an ammonia are introduced as raw material gases into the reactor and supplied onto the substrate, to form an AlN film. In this case, the temperature of the base material is set to 1100° C. or over, and the ratio (V raw material gas/III raw material gas) is set to 800 or below, and the forming pressure is set within a range of 7-17 Torr. As a result, the crystallinity of the AlN film is developed to 90 arcsec or below in FWHM of X-ray rocking curve, and the surface flatness of the AlN film is developed to 20 Å or below. Therefore, a substrate composed of the base material and the AlN film is preferably usable for an acoustic surface wave device, and if the substrate is employed, the deviation from the theoretical propagation velocity is set to 1.5 m/sec or below.

摘要翻译： 将由C面蓝宝石单晶构成的基材设置在安装在水平排列的反应器中的基座上。 然后，将三甲基铝和氨作为原料气体引入反应器中并供给到基板上，形成AlN膜。 在这种情况下，将基材的温度设定为1100℃以上，将原料气体/ III原料气体的比率设定为800以下，将成形压力设定在 7-17 Torr。 结果，在X射线摇摆曲线的FWHM中，AlN膜的结晶度显现为90弧秒以下，AlN膜的表面平坦度显现为20以下。 因此，由基材和AlN膜构成的基板优选用于声表面波器件，如果使用基板，则与理论传播速度的偏差设定为1.5m / sec以下。