公开(公告)号：US07430894B2

公开(公告)日：2008-10-07

申请号：US10573855

申请日：2004-09-28

申请人： Kouji Matsuo ,  Kazuro Tokushige

发明人： Kouji Matsuo ,  Kazuro Tokushige

IPC分类号： G01N7/00

CPC分类号： G01N27/4077

摘要： A gas sensor where breakage of a separator can be prevented even if impact is applied to an outer sleeve from outside and the separator can be stably held in the outer sleeve. A separator (82) is received in an outer sleeve (44) without contact with the inner circumferential surface of the outer sleeve (44), and the separator (82) is held in contact with a front end surface (52) of an elastic seal member (50) and urged toward the rear end. At that time, the separator (82) is held between the urging metal piece (200) and the elastic seal member (50) while being urged toward the elastic seal member (50). The urging metal piece (200) is located around a front-end-side portion (301) of the separator (82) and, with effect of a deformed portion (205) of the outer sleeve (44), the urging metal piece (200) is deformed so as to urge the separator (82) toward the rear end. Because of the above structure, even when impact is applied to the outer sleeve (44) from outside, the impact is not directly transmitted to the separator (82) and the elastic seal member (50) absorbs or cushions the impact. As a result, breakage of the separator (82) can be prevented.

摘要翻译： 即使从外部对外套筒施加冲击也能够防止隔膜破损的气体传感器，能够将隔膜稳定地保持在外套筒内。 分隔器（82）被容纳在外套筒（44）中，而不与外套筒（44）的内圆周表面接触，并且分离器（82）保持与弹性的前端表面（52）接触 密封构件（50）并且朝向后端推动。 此时，分离器（82）被推向弹性密封部件（50）的同时被保持在推压金属片（200）和弹性密封部件（50）之间。 推压金属片（200）位于隔板（82）的前端侧部分（301）周围，并且由于外套筒（44）的变形部分（205）的作用，施力金属片 200）变形以便朝向后端推动分离器（82）。 由于上述结构，即使从外部向外套筒（44）施加冲击时，也不会直接将冲击传递到分离器（82），弹性密封部件（50）吸收或缓冲冲击。 结果，能够防止分离器82的破损。

公开(公告)号：US20080061370A1

公开(公告)日：2008-03-13

申请号：US11898020

申请日：2007-09-07

申请人： Kouji Matsuo

发明人： Kouji Matsuo

IPC分类号： H01L27/12 ,  H01L21/8236

CPC分类号： H01L29/42384 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/785

摘要： A semiconductor device has plural columnar gate electrodes for plural MOSFETs formed in a row separately on a semiconductor substrate, and a semiconductor region which is formed in a part between the neighboring two columnar gate electrodes of the plural columnar gate electrodes to form a channel of the MOSFETs.

摘要翻译： 半导体器件具有用于分开形成在半导体衬底上的行中的多个MOSFET的多个柱状栅极电极和形成在多个柱状栅电极的相邻的两个柱状栅电极之间的部分中以形成沟道的半导体区域 MOSFET。

公开(公告)号：US20070215918A1

公开(公告)日：2007-09-20

申请号：US11704924

申请日：2007-02-12

申请人： Takayuki Ito ,  Kyoichi Suguro ,  Kouji Matsuo

发明人： Takayuki Ito ,  Kyoichi Suguro ,  Kouji Matsuo

IPC分类号： H01L29/76

CPC分类号： H01L21/823857 ,  H01L21/823814 ,  H01L21/823842

摘要： A semiconductor device includes a semiconductor region, a source region, a drain region, a source extension region a drain extension region, a first gate insulation film, a second gate insulation film, and a gate electrode. The source region, drain region, source extension region and drain extension region are formed in a surface portion of the semiconductor region. The first gate insulation film is formed on the semiconductor region between the source extension region and the drain extension region. The first gate insulation film is formed of a silicon oxide film or a silicon oxynitride film having a nitrogen concentration of 15 atomic % or less. The second gate insulation film is formed on the first gate insulation film and contains nitrogen at a concentration of between 20 atomic % and 57 atomic %. The gate electrode is formed on the second gate insulation film.

摘要翻译： 半导体器件包括半导体区域，源极区域，漏极区域，源极延伸区域，漏极延伸区域，第一栅极绝缘膜，第二栅极绝缘膜和栅极电极。 源极区域，漏极区域，源极延伸区域和漏极延伸区域形成在半导体区域的表面部分中。 第一栅极绝缘膜形成在源极延伸区域和漏极延伸区域之间的半导体区域上。 第一栅极绝缘膜由氮浓度为15原子％以下的氧化硅膜或氮氧化硅膜形成。 第二栅极绝缘膜形成在第一栅极绝缘膜上，并且含有浓度为20原子％至57原子％之间的氮。 栅电极形成在第二栅绝缘膜上。

公开(公告)号：US20070119235A1

公开(公告)日：2007-05-31

申请号：US10573855

申请日：2004-09-28

申请人： Kouji Matsuo ,  Kazuro Tokushige

发明人： Kouji Matsuo ,  Kazuro Tokushige

IPC分类号： G01N33/00 ,  G01M15/10 ,  G01N27/00

CPC分类号： G01N27/4077

摘要： A gas sensor where breakage of a separator can be prevented even if impact is applied to an outer sleeve from outside and the separator can be stably held in the outer sleeve. A separator (82) is received in an outer sleeve (44) without contact with the inner circumferential surface of the outer sleeve (44), and the separator (82) is held in contact with a front end surface (52) of an elastic seal member (50) and urged toward the rear end. At that time, the separator (82) is held between the urging metal piece (200) and the elastic seal member (50) while being urged toward the elastic seal member (50). The urging metal piece (200) is located around a front-end-side portion (301) of the separator (82) and, with effect of a deformed portion (205) of the outer sleeve (44), the urging metal piece (200) is deformed so as to urge the separator (82) toward the rear end. Because of the above structure, even when impact is applied to the outer sleeve (44) from outside, the impact is not directly transmitted to the separator (82) and the elastic seal member (50) absorbs or cushions the impact. As a result, breakage of the separator (82) can be prevented.

摘要翻译： 即使从外部对外套筒施加冲击也能够防止隔膜破损的气体传感器，能够将隔膜稳定地保持在外套筒内。 分隔器（82）被容纳在外套筒（44）中，而不与外套筒（44）的内圆周表面接触，并且分离器（82）保持与弹性的前端表面（52）接触 密封构件（50）并且朝向后端推动。 此时，分离器（82）被推向弹性密封部件（50）的同时被保持在推压金属片（200）和弹性密封部件（50）之间。 推压金属片（200）位于隔板（82）的前端侧部分（301）周围，并且由于外套筒（44）的变形部分（205）的作用，施力金属片 200）变形以便朝向后端推动分离器（82）。 由于上述结构，即使从外部向外套筒（44）施加冲击时，也不会直接将冲击传递到分离器（82），弹性密封部件（50）吸收或缓冲冲击。 结果，能够防止分离器82的破损。

公开(公告)号：US20060011989A1

公开(公告)日：2006-01-19

申请号：US11232861

申请日：2005-09-23

申请人： Kouji Matsuo

发明人： Kouji Matsuo

IPC分类号： H01L29/94

CPC分类号： H01L29/66545 ,  H01L21/28097 ,  H01L21/823814 ,  H01L21/823842 ,  H01L21/823864

摘要： A semiconductor device comprises a semiconductor substrate, an N-channel MISFET and a P-channel MISFET provided on the semiconductor substrate, each of the N- and P-channel MISFETs being isolated by an isolation region and having a gate insulating film, a first gate electrode film provided on the gate insulating film of the N-channel MISFET and composed of a first metal silicide, a second gate electrode film provided on the gate insulating film of the P-channel MISFET and composed of a second metal silicide made of a second metal material different from a first metal material composing the first metal silicide, and a work function of the first gate electrode film being lower than that of the second gate electrode film.

摘要翻译： 半导体器件包括设置在半导体衬底上的半导体衬底，N沟道MISFET和P沟道MISFET，每个N沟道MIS晶体管和P沟道MISFET由隔离区域隔离并具有栅极绝缘膜，第一 栅极电极膜，设置在N沟道MISFET的栅极绝缘膜上，由第一金属硅化物构成，第二栅极电极膜设置在P沟道MISFET的栅极绝缘膜上，并由第二金属硅化物 第二金属材料与构成第一金属硅化物的第一金属材料不同，第一栅电极膜的功函数低于第二栅电极膜的功函数。

公开(公告)号：US06964893B2

公开(公告)日：2005-11-15

申请号：US10813451

申请日：2004-03-30

申请人： Kouji Matsuo

发明人： Kouji Matsuo

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L29/78 ,  H01L29/72

CPC分类号： H01L29/66583 ,  H01L21/823842 ,  H01L29/66553 ,  H01L2924/0002 ,  H01L2924/00

摘要： A gate electrode of an n-type MIS transistor includes a first metal-containing film, which is formed in contact with a gate insulation film and has a Fermi level on a conductive band side from a substantial center of a band gap of a semiconductor substrate, and a second metal-containing film formed on the first metal-containing film and having a lower resistance than the first metal-containing film. A gate electrode of a p-type MIS transistor includes a conductive coating film, which is formed in contact with the gate insulation film and has a Fermi level on a valence band side from a substantial center of the band gap of the semiconductor substrate, and the second metal-containing film formed on the conductive coating film and having a lower resistance than the conductive coating film.

摘要翻译： n型MIS晶体管的栅电极包括第一含金属膜，其与栅极绝缘膜接触形成，并且在半导体衬底的带隙的大致中心的导电带侧具有费米能级 以及形成在第一含金属膜上并且具有比第一含金属膜更低的电阻的第二含金属膜。 p型MIS晶体管的栅电极包括形成为与栅极绝缘膜接触并且具有从半导体衬底的带隙的大致中心的价带侧的费米能级的导电涂层膜，以及 所述第二含金属膜形成在所述导电涂膜上并且具有比所述导电涂膜更低的电阻。

公开(公告)号：US06887747B2

公开(公告)日：2005-05-03

申请号：US10205203

申请日：2002-07-26

申请人： Atsushi Yagishita ,  Kouji Matsuo

发明人： Atsushi Yagishita ,  Kouji Matsuo

IPC分类号： H01L21/283 ,  H01L21/28 ,  H01L21/335 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/08 ,  H01L27/092 ,  H01L27/095 ,  H01L29/417 ,  H01L29/45 ,  H01L29/47 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L29/786 ,  H01L29/872 ,  H01L21/8234

CPC分类号： H01L21/28194 ,  H01L21/823814 ,  H01L21/823828 ,  H01L27/095 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/47 ,  H01L29/4908 ,  H01L29/51 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66583 ,  H01L29/66643 ,  H01L29/7839

摘要： There is disclosed a semiconductor device in which a device isolating insulating film is formed in a periphery of a device region of a semiconductor silicon substrate device region. A side wall insulating film formed of a silicon nitride film is formed to cover the periphery of a channel region on the silicon substrate. A Ta2O5 film, and a metal gate electrode are formed inside a trench whose side wall is formed of the side wall insulating film. An interlayer insulating film is formed on the device isolating insulating film. A Schottky source/drain formed of silicide is formed on the silicon substrate in a bottom portion of the trench whose side wall is formed of the side wall insulating film and interlayer insulating film. A source/drain electrode is formed on the Schottky source/drain.

摘要翻译： 公开了一种半导体器件，其中在半导体硅衬底器件区域的器件区域的周围形成器件隔离绝缘膜。 形成由氮化硅膜形成的侧壁绝缘膜，以覆盖硅衬底上的沟道区的周边。 在其侧壁由侧壁绝缘膜形成的沟槽内部形成有一个Ta 2 O 5 O 5膜和金属栅电极。 在器件隔离绝缘膜上形成层间绝缘膜。 在沟槽的底部的硅衬底上形成由硅化物形成的肖特基源极/漏极，其侧壁由侧壁绝缘膜和层间绝缘膜形成。 源极/漏电极形成在肖特基源/漏极上。

公开(公告)号：US06395159B2

公开(公告)日：2002-05-28

申请号：US09143384

申请日：1998-08-28

申请人： Kouji Matsuo ,  Satoshi Ishikawa ,  Shoji Akatsuka ,  Shoichi Ohtsuki ,  Takashi Mizukusa ,  Hiromichi Hayashi

发明人： Kouji Matsuo ,  Satoshi Ishikawa ,  Shoji Akatsuka ,  Shoichi Ohtsuki ,  Takashi Mizukusa ,  Hiromichi Hayashi

IPC分类号： G01N27407

CPC分类号： G01N27/407

摘要： An oxygen sensor is constituted by a ceramic separator being placed so that the rear thereof enters the inside of a filter holding part and the front enters the inside of a casing and formed with a plurality of lead insertion holes axially penetrating the ceramic separator and an elastic seal member being fitted elastically into a rear opening of the filter holding part and having seal lead insertion holes for inserting leads for sealing the gap between the outer faces of the leads and the inner face of the filter holding part. The rear end face of the ceramic separator is positioned on the rear side behind a gas introduction hole in the axial direction and a predetermined gap is formed between the elastic seal member and the ceramic separator at least at the lead insertion position.

摘要翻译： 氧传感器由陶瓷分离器构成，其后部进入过滤器保持部分的内部，前部进入壳体内部，并形成有多个引导插入孔，其轴向穿透陶瓷分离器，弹性体 密封构件弹性地装配到过滤器保持部的后开口中，并且具有用于插入用于密封引线的外表面和过滤器保持部的内表面之间的间隙的引线的密封引线插入孔。 陶瓷分离器的后端面位于气体导入孔的后方，在轴向后方，至少在引线插入位置，在弹性密封部件与陶瓷分离器之间形成规定的间隙。