发明授权
- 专利标题： Semiconductor device and method of fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US10813451申请日： 2004-03-30
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公开(公告)号： US06964893B2公开(公告)日： 2005-11-15
- 发明人: Kouji Matsuo
- 申请人： Kouji Matsuo
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Frommer Lawrence & Haug LLP
- 优先权： JP2000-293929 20000927
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/336 ; H01L21/8238 ; H01L27/092 ; H01L29/423 ; H01L29/43 ; H01L29/49 ; H01L29/78 ; H01L29/72
摘要：
A gate electrode of an n-type MIS transistor includes a first metal-containing film, which is formed in contact with a gate insulation film and has a Fermi level on a conductive band side from a substantial center of a band gap of a semiconductor substrate, and a second metal-containing film formed on the first metal-containing film and having a lower resistance than the first metal-containing film. A gate electrode of a p-type MIS transistor includes a conductive coating film, which is formed in contact with the gate insulation film and has a Fermi level on a valence band side from a substantial center of the band gap of the semiconductor substrate, and the second metal-containing film formed on the conductive coating film and having a lower resistance than the conductive coating film.
公开/授权文献
- US20040183143A1 Semiconductor device and method of fabricating the same 公开/授权日：2004-09-23
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