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71.发明公开公开(公告)号：US20240118614A1
公开(公告)日：2024-04-11
申请号：US18389961
申请日：2023-12-20
申请人： Inpria Corporation
IPC分类号： G03F7/039 , G03F1/22 , G03F1/48 , G03F7/00 , G03F7/004 , G03F7/038 , G03F7/11 , G03F7/20 , G03F7/42
CPC分类号： G03F7/0392 , G03F1/22 , G03F1/48 , G03F7/0017 , G03F7/0042 , G03F7/0382 , G03F7/11 , G03F7/2004 , G03F7/2037 , G03F7/42
摘要： Multiple patterning approaches using radiation sensitive organometallic materials is described. In particular, multiple patterning approaches can be used to provide distinct multiple patterns of organometallic material on a hardmask or other substrate through a sequential approach that leads to a final pattern. The multiple patterning approach may proceed via sequential lithography steps with multiple organometallic layers and may involve a hardbake freezing after development of each pattern. Use of an organometallic resist with dual tone properties to perform pattern cutting and multiple patterning of a single organometallic layer are described. Corresponding structures are also described.
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公开(公告)号：US20240103367A1
公开(公告)日：2024-03-28
申请号：US18358150
申请日：2023-07-25
发明人： Masahiro FUKUSHIMA
CPC分类号： G03F7/029 , G03F7/0045 , G03F7/0048 , G03F7/0382 , G03F7/0397 , G03F7/2006
摘要： The present invention is an onium salt represented by the following general formula (1),
wherein RALU represents any one of a tertiary ether, tertiary carbonate or acetal formed together with the adjacent oxygen atom; I represents an iodine atom; Ra represents a hydrocarbyl group having 1 to 20 carbon atoms and optionally having a heteroatom; and Z+ represents an onium cation. This can provide an onium salt used for a resist composition that has high sensitivity, excellent resolution, improved LWR (roughness) and CDU (critical dimension uniformity), and that can inhibit collapse of a resist pattern in lithography.-
公开(公告)号：US11940730B2
公开(公告)日：2024-03-26
申请号：US17565019
申请日：2021-12-29
发明人： Mitsuru Haga , Mingqi Li
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/20 , G03F7/38 , G03F7/40
摘要： Disclosed herein is a pattern formation method, comprising (a) applying a layer of a photoresist composition over a semiconductor substrate, (b) pattern-wise exposing the photoresist composition layer to i-line radiation; and (c) developing the exposed photoresist composition layer to provide a resist relief image; wherein the photoresist composition comprises a non-ionic photoacid generator; a solvent; a first polymer and a second polymer; and wherein the first polymer comprises a polymeric dye.
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公开(公告)号：US11940728B2
公开(公告)日：2024-03-26
申请号：US17484333
申请日：2021-09-24
IPC分类号： G03F7/004 , C07C59/84 , C07C309/71 , C07C381/12
CPC分类号： G03F7/0045 , C07C59/84 , C07C309/71 , C07C381/12 , C07C2601/14
摘要： A molecular resist composition and a pattern forming process. A molecular resist composition comprising a sulfonium salt having a cation of specific structure and an organic solvent has a high sensitivity and forms a resist film with improved resolution and LWR, when processed by EB or EUV lithography. The molecular resist composition does not contain a base polymer. The molecular resist composition comprising a sulfonium salt having a cation of specific partial structure has a high sensitivity and forms a resist film with improved resolution and LWR, so that the resist composition is quite useful for precise micropatterning.
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75.发明公开公开(公告)号：US20240087905A1
公开(公告)日：2024-03-14
申请号：US18364651
申请日：2023-08-03
发明人： Naoki KOBAYASHI , Toshiharu YANO
IPC分类号： H01L21/308 , G03F7/004 , G03F7/11 , G03F7/16 , H01L21/027 , H01L21/3065
CPC分类号： H01L21/3081 , G03F7/0041 , G03F7/11 , G03F7/162 , H01L21/0275 , H01L21/3065 , H01L21/3086
摘要： An object of the present invention is to provide a wafer edge protection film having dry etching resistance superior to those of the previously-known wafer edge protection films, as well as excellent film forming property even at wafer edge portions, which are difficult to coat: a wafer edge protection film forming method for forming a protection film on a wafer edge of a substrate, including the steps of (i) coating a peripheral edge of the substrate with a composition for forming a protection film including an aromatic ring-containing resin (A) having an organic group represented by the following general formula (1), and a solvent; and (ii) curing the applied composition for forming a protection film by heat or optical irradiation to form the protection film on the peripheral edge of the substrate.
wherein RA is a hydrogen atom or a monovalent organic group having 1 to 10 carbon atoms, and * represents a bonding site.-
公开(公告)号：US20240085803A1
公开(公告)日：2024-03-14
申请号：US18514254
申请日：2023-11-20
发明人： Tai-I Yang , Wei-Chen Chu , Hsiang-Wei Liu , Shau-Lin Shue , Li-Lin Su , Yung-Hsu Wu
IPC分类号： G03F7/00 , G03F7/004 , G03F7/09 , H01L21/768
CPC分类号： G03F7/70633 , G03F7/0035 , G03F7/0043 , G03F7/0047 , G03F7/094 , G03F7/70625 , H01L21/76807 , H01L21/7682 , H01L21/76837 , H01L21/76885 , H01L21/76897 , H01L21/76849
摘要： Photolithography overlay errors are a source of patterning defects, which contribute to low wafer yield. An interconnect formation process that employs a patterning photolithography/etch process with self-aligned interconnects is disclosed herein. The interconnection formation process, among other things, improves a photolithography overlay (OVL) margin since alignment is accomplished on a wider pattern. In addition, the patterning photolithography/etch process supports multi-metal gap fill and low-k dielectric formation with voids.
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公开(公告)号：US20240085791A1
公开(公告)日：2024-03-14
申请号：US18508781
申请日：2023-11-14
发明人： Seung-Keun KIM , Kyung-Jae PARK
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/162 , G03F7/168 , G03F7/18 , G03F7/2006 , G03F7/322 , G03F7/38 , G03F7/40
摘要： The colored photosensitive resin composition of the present invention maintains excellent resolution, visibility, and the like while it has excellent reflectance RSCI measured by the SCI (specular component included) method, reflectance RSCE measured by the SCE (specular component excluded) method, and the ratio between them (RSCE/RSCI), and has a uniform film thickness in an appropriate range. Thus, it can be formed into a multilayer cured film that simultaneously satisfies such physical properties as a high reflectance and a high light-shielding property. In addition, when a cured film is formed from the composition, it is possible to form a pattern on a multilayer film in a single development process. Thus, it can be advantageously used for a quantum dot display device.
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公开(公告)号：US20240077802A1
公开(公告)日：2024-03-07
申请号：US18231006
申请日：2023-08-07
发明人： Yu-Chung SU , Tsung-Han KO , Ching-Yu CHANG
CPC分类号： G03F7/11 , G03F7/0045 , G03F7/38
摘要： A method of forming a photoresist pattern includes forming a protective layer over a photoresist layer formed on a substrate. The protective layer and the photoresist layer are selectively exposed to actinic radiation. The photoresist layer is developed to form a pattern in the photoresist layer. The protective layer includes a polymer without a nitrogen-containing moiety, and a basic quencher, an organic acid, a photoacid generator, or a thermal acid generator.
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公开(公告)号：US11921427B2
公开(公告)日：2024-03-05
申请号：US17309247
申请日：2019-11-11
CPC分类号： G03F7/2004 , G03F7/327 , G03F7/0042
摘要： Imaging layers on the surface of a substrate may be patterned using next generation lithographic techniques, and the resulting patterned film may be used as a lithographic mask, for example, for production of a semiconductor device.
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80.发明公开公开(公告)号：US20240061336A1
公开(公告)日：2024-02-22
申请号：US18323358
申请日：2023-05-24
发明人： Changsoo WOO , Seung HAN , Seungyong CHAE , Minyoung LEE , Jimin KIM , Sumin JANG , Sangkyun IM , Yaeun SEO , Eunmi KANG , Soobin LIM , Kyungsoo MOON
CPC分类号： G03F7/039 , G03F7/0045 , G03F7/0044
摘要： A semiconductor photoresist composition and a method of forming patterns utilizing the semiconductor photoresist composition are disclosed. The semiconductor photoresist composition may include a first organometallic compound represented by Chemical Formula 1, a second organometallic compound represented by Chemical Formula 2, and a solvent, where the first organometallic compound is different from the second organometallic compound, at least one selected from among R1 and L1 may include a tertiary carbon, and at least one selected from among R2 and L2 may include at least one selected from among a primary carbon and a secondary carbon.
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