公开(公告)号：US06727142B1

公开(公告)日：2004-04-27

申请号：US10284508

申请日：2002-10-29

申请人： Oleg Gluschenkov ,  Suryanarayan G. Hegde ,  Helmut H. Tews

发明人： Oleg Gluschenkov ,  Suryanarayan G. Hegde ,  Helmut H. Tews

IPC分类号： H01L2126

CPC分类号： H01L21/02332 ,  H01L21/02247 ,  H01L21/3141 ,  H01L21/3144 ,  H01L21/32105

摘要： Forming a vertical MOS transistor or making another three-dimensional integrated circuit structure in a silicon wafer exposes planes having at least two different crystallographic orientations. Growing oxide on different crystal planes is inherently at different growth rates because the inter-atomic spacing is different in the different planes. Heating the silicon in a nitrogen-containing ambient to form a thin layer of nitride and then growing the oxide through the thin nitrided layer reduces the difference in oxide thickness to less than 1%.

摘要翻译： 形成垂直MOS晶体管或在硅晶片中制造另一三维集成电路结构暴露具有至少两个不同晶体取向的平面。 不同晶面上生长的氧化物固有地在不同的生长速率下，因为不同平面中原子间的间距是不同的。 在含氮环境中加热硅以形成氮化物薄层，然后通过薄氮化层生长氧化物，将氧化物厚度的差异减小到小于1％。

公开(公告)号：US06649545B2

公开(公告)日：2003-11-18

申请号：US10265910

申请日：2002-10-08

申请人： Vishnu K. Agarwal

发明人： Vishnu K. Agarwal

IPC分类号： H01L2126

CPC分类号： C23C16/452 ,  C23C16/482 ,  H01J37/32339 ,  H01J37/32357 ,  H01L21/3105 ,  H01L21/31051 ,  H01L21/31138 ,  H01L21/314 ,  H01L21/67069

摘要： The present invention provides a plasma processing system comprising a remote plasma activation region for formation of active gas species, a transparent transfer tube coupled between the remote activation region and a semiconductor processing chamber, and a source of photo energy for maintaining activation of the active species during transfer from the remote plasma activation region to the processing chamber. The source of photo energy preferably includes an array of UV lamps. Additional UV lamps may also be used to further sustain active species and assist plasma processes by providing additional in-situ energy through a transparent window of the processing chamber. The system can be utilized for annealing.

公开(公告)号：US06635588B1

公开(公告)日：2003-10-21

申请号：US10078842

申请日：2002-02-19

申请人： Andrew M. Hawryluk ,  Somit Talwar ,  Yun Wang ,  Michael O. Thompson

发明人： Andrew M. Hawryluk ,  Somit Talwar ,  Yun Wang ,  Michael O. Thompson

IPC分类号： H01L2126

CPC分类号： H01L21/02686 ,  B23K26/009 ,  B23K26/18 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： Method for controlling heat transferred to a workpiece (W) process region (30) from laser radiation (10) using a thermally induced reflectivity switch layer (60). A film stack (6) is formed having an absorber layer (50) atop the workpiece with a portion covering the process region. The absorber layer absorbs and converts laser radiation into heat. Reflective switch layer (60) is deposited atop the absorber layer. The reflective switch layer comprises one or more layers, e.g. thermal insulator and reflectivity transition layers. The reflective switch layer covering the process region has a temperature related to the temperature of the process region. Reflectivity of the switch layer changes from a low to a high reflectivity state at a critical temperature of the process region, limiting radiation absorbed by the absorber layer by reflecting incident radiation when switched. This limits the amount of heat transferred to the process region from the absorber layer.

摘要翻译： 用于使用热诱导反射率开关层（60）控制从激光辐射（10）传送到工件（W）处理区域（30）的热的方法。 一个薄膜叠层（6）被形成为具有覆盖工艺区域的部分的工件上方的吸收层（50）。 吸收层吸收并将激光辐射转换成热。 反射开关层（60）沉积在吸收层的顶部。 反射开关层包括一个或多个层，例如 隔热层和反射层过渡层。 覆盖处理区域的反射开关层具有与处理区域的温度相关的温度。 开关层的反射率在处理区域的临界温度从低反射率状态变化到高反射率状态，通过在切换时反射入射辐射来限制吸收层吸收的辐射。 这限制了从吸收层传递到处理区域的热量。

公开(公告)号：US06531367B2

公开(公告)日：2003-03-11

申请号：US09811472

申请日：2001-03-20

申请人： Wei-Wen Chen

发明人： Wei-Wen Chen

IPC分类号： H01L2126

CPC分类号： H01L21/2236

摘要： A method for forming an ultra-shallow junction by boron plasma doping is disclosed. A substrate is placed in a pulse type electric field. A flowing carrying gas drives boron ions in a channel above the substrate, and then a negative pulse type voltage is applied so that the boron ions may uniformly enter into the substrate. Then a rapid annealing process is performed so as to be formed with an ultra-shallow junction on the substrate. In the present invention, by the boron plasma doping, an ultra-shallow junction is provided on a surface of the substrate. Therefore, after the next thermal process, the property of the element can be retained. A lower depth junction is acquired, and the diffusion in the horizontal direction is suppressed.

公开(公告)号：US06475888B1

公开(公告)日：2002-11-05

申请号：US10016534

申请日：2001-12-10

申请人： Yong Sun Sohn

发明人： Yong Sun Sohn

IPC分类号： H01L2126

CPC分类号： H01L29/6659 ,  H01L21/268 ,  H01L29/4925 ,  H01L29/6656

摘要： A method for forming an ultra-shallow junction using laser annealing wherein an amorphous carbon layer is used as an energy absorber layer comprises the steps of preparing a silicon substrate having isolation layers; forming a gate having a stacked structure of a gate insulating layer, a polysilicon layer and a metal layer on the silicon substrate; forming a sacrificial spacer on the sidewalls of the gate; forming source and drain regions on the silicon substrate regions at both sides of the gate including on the sacrificial spacer; removing the sacrificial spacer; doping impurities to form source/drain extension doping layers on the silicon substrate regions at both sides of the gate; depositing sequentially a reaction preventing layer and an amorphous carbon layer as a laser absorber layer on the resulting structure; forming source/drain extension doping layers on inner sides of the source and drain regions by performing laser annealing in an atmosphere of inert gas or under vacuum; and removing the amorphous carbon layer.

摘要翻译： 使用激光退火形成超浅结的方法，其中使用无定形碳层作为能量吸收层，包括制备具有隔离层的硅衬底的步骤; 在硅衬底上形成具有栅极绝缘层，多晶硅层和金属层的堆叠结构的栅极; 在栅极的侧壁上形成牺牲隔离物; 在包括在牺牲间隔物上的栅极两侧的硅衬底区域上形成源区和漏区; 去除牺牲隔离物; 掺杂杂质以在栅极两侧的硅衬底区域上形成源极/漏极延伸掺杂层; 在所得结构上依次沉积反应防止层和无定形碳层作为激光吸收层; 通过在惰性气体或真空中进行激光退火，在源区和漏区的内侧形成源极/漏极延伸掺杂层; 并除去无定形碳层。

公开(公告)号：US06458723B1

公开(公告)日：2002-10-01

申请号：US09594464

申请日：2000-06-14

申请人： Francois J. Henley ,  Michael A. Bryan ,  William G. En

发明人： Francois J. Henley ,  Michael A. Bryan ,  William G. En

IPC分类号： H01L2126

CPC分类号： H01L21/67103 ,  H01J2237/2001 ,  H01J2237/31701

摘要： An ion implantation apparatus and method. The apparatus has a vacuum chamber and an ion beam generator to generate an ion beam in the vacuum chamber. The apparatus also has an implant wheel (10), in the vacuum chamber, having a plurality of circumferentially distributed substrate holding positions. Each of the substrate holding positions comprises a substrate holder (17), which includes an elastomer overlying the substrate holder (17) and a thermal insulating material (71) (e.g., quartz, silicon, ceramics, and other substantially non-compliant materials) overlying the elastomer (72). The present thermal insulating material increases a temperature of a substrate as it is implanted.

摘要翻译： 一种离子注入装置及方法。 该装置具有真空室和离子束发生器，以在真空室中产生离子束。 该设备还具有植入轮（10），其在真空室中具有多个周向分布的衬底保持位置。 每个基板保持位置包括基板保持器（17），其包括覆盖基板保持器（17）的弹性体和绝热材料（例如石英，硅，陶瓷和其他基本上不顺从的材料） 覆盖弹性体（72）。 本发明的绝热材料在植入时增加了基板的温度。

公开(公告)号：US06432847B1

公开(公告)日：2002-08-13

申请号：US09587211

申请日：2000-06-01

申请人： Jian-Shihn Tsang ,  Wen-Chung Tsai ,  Tsung-Yu Chen ,  Chia-Hung Hsu ,  Wei-Chih Lai

发明人： Jian-Shihn Tsang ,  Wen-Chung Tsai ,  Tsung-Yu Chen ,  Chia-Hung Hsu ,  Wei-Chih Lai

IPC分类号： H01L2126

CPC分类号： H01L21/3245 ,  H01L21/268

摘要： A novel method of using lasers for generating driving energy for activating P-type compound semiconductor films and reducing the resistivity thereof. The P-type compound semiconductor films are made from III-V nitrides or II-VI group compounds doped with P-type impurity. The present invention can be carried out in the ambience of atmosphere rather than in the ambience of nitrogen gas. In addition, adjusting the power and focusing distance of a laser source, and the power density can change the time required by the activating process.

摘要翻译： 一种使用激光器产生用于激活P型化合物半导体膜的驱动能并降低其电阻率的新颖方法。 P型化合物半导体膜由掺杂有P型杂质的III-V族氮化物或II-VI族化合物制成。 本发明可以在大气环境中进行，而不是在氮气氛下进行。 此外，调整激光源的功率和聚焦距离，并且功率密度可以改变激活过程所需的时间。

公开(公告)号：US06376395B2

公开(公告)日：2002-04-23

申请号：US09481080

申请日：2000-01-11

申请人： Jiri L. Vasat ,  Andrei Stefanescu ,  Thomas M. Hanley

发明人： Jiri L. Vasat ,  Andrei Stefanescu ,  Thomas M. Hanley

IPC分类号： H01L2126

CPC分类号： H01L21/02008 ,  H01L21/3225

摘要： A process for manufacturing polished-like first-grade semiconductor wafers is disclosed. The process greatly simplifies the amount of polishing required while producing high quality semiconductor wafers. After a semiconductor wafer is sliced from a single crystal ingot, lapped and ground, the wafer is subjected to a double side fine grinding operation, a micro-etching operation, and an annealing operation to significantly improve the quality of the front surface. To complete to process the semiconductor wafer is flash polished to impart a specular finish on the front surface. In accordance with the present invention the semiconductor wafers may also be produced having a denuded zone capable of internal gettering.

摘要翻译： 公开了一种制造抛光一级半导体晶片的方法。 该工艺大大简化了生产高质量半导体晶片所需的抛光量。 在从单晶锭切割半导体晶片之后，研磨和研磨，对晶片进行双面精细研磨操作，微蚀刻操作和退火操作，以显着提高前表面的质量。 为了完成处理半导体晶片而进行闪光抛光以在前表面赋予镜面光洁度。 根据本发明，也可以制造具有能够内部吸气的剥离区的半导体晶片。

公开(公告)号：US06284674B1

公开(公告)日：2001-09-04

申请号：US09705947

申请日：2000-11-06

申请人： Makoto Toraguchi ,  Satoru Kawakami

发明人： Makoto Toraguchi ,  Satoru Kawakami

IPC分类号： H01L2126

CPC分类号： H01J37/32192 ,  C23C16/4405 ,  C23C16/511 ,  H01J37/3266 ,  H01L21/31612

摘要： Disclosed is a plasma process apparatus which permits generating microwaves and a magnetic field so as to bring about electron cyclotron resonance and, thus, to generate a plasma which is applied to a semiconductor wafer, comprising microwave generating means for generating said microwaves, microwave transmitting means for transmitting the microwaves, a process chamber having said semiconductor wafer arranged therein, the microwaves being introduced into said process chamber through said microwave transmitting means, process gas supply means for supplying a process gas into said process chamber, and magnetic field generating means for generating a magnetic field within the process chamber. The frequency of the microwave falls within a range between a lower limit of a cutoff frequency determined by the inner diameter of the process chamber and an upper limit of a maximum frequency at which a standing wave of the microwave does not occur on the surface of the object.

摘要翻译： 公开了一种允许产生微波和磁场的等离子体处理装置，以产生电子回旋共振，从而产生施加到半导体晶片的等离子体，其包括用于产生所述微波的微波产生装置，微波发射装置 为了传输微波，具有布置在其中的所述半导体晶片的处理室，所述微波通过所述微波传输装置引入所述处理室，用于将处理气体供应到所述处理室中的处理气体供应装置，以及用于产生 处理室内的磁场。 微波的频率落在由处理室的内径确定的截止频率的下限与微波的驻波不在其表面上发生的最大频率的上限之间的范围内 目的。

公开(公告)号：US06207591B1

公开(公告)日：2001-03-27

申请号：US09190444

申请日：1998-11-13

申请人： Nobutoshi Aoki ,  Ichiro Mizushima

发明人： Nobutoshi Aoki ,  Ichiro Mizushima

IPC分类号： H01L2126

CPC分类号： H01L21/28185 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02312 ,  H01L21/28167 ,  H01L21/28211 ,  H01L21/31662 ,  H01L21/67115 ,  H01L21/823857

摘要： A silicon wafer is heated from an initial pre-heating temperature (T0) up to a first annealing temperature (T1) by a rapid heating up step using an IR lamp. A first annealing is executed at the first annealing temperature (T1). Successively, while the silicon wafer is maintained at a second annealing temperature (T2) lower than the first annealing temperature (T1), a second annealing step is executed by a resistive heating furnace. A thermal oxidation can be executed as the second annealing step. To do so, an equipment for manufacturing a semiconductor device in the present invention is provided with: a heating device having an IR lamp and a resistive heater; an annealing tube having on a surface thereof a plurality of concave portions in such a way that each bottom approaches a central line; a resistive heater wrapped around this annealing tube; and an IR lamp movably inserted into and pulled out from the concave portion from the external. A IR lamp moving unit for moving the IR lamp is connected to the IR lamp. A wafer loader for mounting a plurality of wafers can be carried into and from the annealing tube. The first annealing step using the IR lamp at the rapid heating rate and successively the second annealing step using the resistive heater are performed on the plurality of wafers without performing a cooling step down to the room temperature. Accordingly, it is possible to effectively recover the damage induced by ion implantation and the like and also possible to suppress the enhanced diffusion of impurity resulting from the,damage to thereby improve the controllability of impurity distribution profile.

摘要翻译： 通过使用IR灯的快速升温步骤将硅晶片从初始预热温度（T0）加热到第一退火温度（T1）。 在第一退火温度（T1）下执行第一退火。 接下来，当硅晶片保持在低于第一退火温度（T1）的第二退火温度（T2）时，通过电阻加热炉执行第二退火步骤。 作为第二退火工序，可以进行热氧化。 为此，本发明的半导体装置的制造装置具备：具有IR灯和电阻加热器的加热装置; 退火管在其表面上具有多个凹部，使得每个底部接近中心线; 围绕该退火管缠绕的电阻加热器; 以及从外部可移动地插入并从凹部中拉出的IR灯。 用于移动IR灯的IR灯移动单元连接到IR灯。 用于安装多个晶片的晶片加载器可以被携带到退火管中和从退火管中。 在多个晶片上执行以快速加热速率使用IR灯的第一退火步骤以及使用电阻加热器的第二退火步骤，而不进行至室温的冷却步骤。 因此，可以有效地回收由离子注入等引起的损伤，并且还可以抑制由于损伤引起的杂质的增强扩散，从而提高杂质分布特性的可控性。