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公开(公告)号:US09815414B1
公开(公告)日:2017-11-14
申请号:US15434448
申请日:2017-02-16
申请人: Thomas M. Hanley
发明人: Thomas M. Hanley
CPC分类号: B60R9/06 , B60P3/062 , B60R11/06 , B60R2011/004
摘要: An attachment for mounting onto a hitch receiver on a vehicle. The attachment is used for transporting a snow blower. The snow blower has wheels, an engine, a front housing and a pair of arms. The attachment comprises a drawbar. A base is supported by the drawbar. An elongate member is supported by the drawbar and has a support surface disposed above and in spaced apart relation to the base. The base is configured and arranged to support the front housing of the snow blower. The base also is configured and arranged to establish a fulcrum as the arms of the snow blower are rotated forward until the snow blower makes contact with the support surface.
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公开(公告)号:US20180065566A1
公开(公告)日:2018-03-08
申请号:US15811093
申请日:2017-11-13
申请人: Thomas M. Hanley
发明人: Thomas M. Hanley
CPC分类号: B60R9/06 , B60D1/58 , B60P3/062 , B60R11/06 , B60R2011/004
摘要: An attachment for mounting onto a hitch receiver on a vehicle. The attachment is used for transporting a snow blower. The snow blower has wheels, an engine, a front housing and a pair of arms. The attachment comprises a drawbar. A base is supported by the drawbar. An elongate member is supported by the drawbar and has a support surface disposed above and in spaced apart relation to the base. The base is configured and arranged to support the front housing of the snow blower. The base also is configured and arranged to establish a fulcrum as the arms of the snow blower are rotated forward until the snow blower makes contact with the support surface.
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公开(公告)号:US06376395B2
公开(公告)日:2002-04-23
申请号:US09481080
申请日:2000-01-11
IPC分类号: H01L2126
CPC分类号: H01L21/02008 , H01L21/3225
摘要: A process for manufacturing polished-like first-grade semiconductor wafers is disclosed. The process greatly simplifies the amount of polishing required while producing high quality semiconductor wafers. After a semiconductor wafer is sliced from a single crystal ingot, lapped and ground, the wafer is subjected to a double side fine grinding operation, a micro-etching operation, and an annealing operation to significantly improve the quality of the front surface. To complete to process the semiconductor wafer is flash polished to impart a specular finish on the front surface. In accordance with the present invention the semiconductor wafers may also be produced having a denuded zone capable of internal gettering.
摘要翻译: 公开了一种制造抛光一级半导体晶片的方法。 该工艺大大简化了生产高质量半导体晶片所需的抛光量。 在从单晶锭切割半导体晶片之后,研磨和研磨,对晶片进行双面精细研磨操作,微蚀刻操作和退火操作,以显着提高前表面的质量。 为了完成处理半导体晶片而进行闪光抛光以在前表面赋予镜面光洁度。 根据本发明,也可以制造具有能够内部吸气的剥离区的半导体晶片。
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