公开(公告)号：US06458723B1

公开(公告)日：2002-10-01

申请号：US09594464

申请日：2000-06-14

申请人： Francois J. Henley ,  Michael A. Bryan ,  William G. En

发明人： Francois J. Henley ,  Michael A. Bryan ,  William G. En

IPC分类号： H01L2126

CPC分类号： H01L21/67103 ,  H01J2237/2001 ,  H01J2237/31701

摘要： An ion implantation apparatus and method. The apparatus has a vacuum chamber and an ion beam generator to generate an ion beam in the vacuum chamber. The apparatus also has an implant wheel (10), in the vacuum chamber, having a plurality of circumferentially distributed substrate holding positions. Each of the substrate holding positions comprises a substrate holder (17), which includes an elastomer overlying the substrate holder (17) and a thermal insulating material (71) (e.g., quartz, silicon, ceramics, and other substantially non-compliant materials) overlying the elastomer (72). The present thermal insulating material increases a temperature of a substrate as it is implanted.

摘要翻译： 一种离子注入装置及方法。 该装置具有真空室和离子束发生器，以在真空室中产生离子束。 该设备还具有植入轮（10），其在真空室中具有多个周向分布的衬底保持位置。 每个基板保持位置包括基板保持器（17），其包括覆盖基板保持器（17）的弹性体和绝热材料（例如石英，硅，陶瓷和其他基本上不顺从的材料） 覆盖弹性体（72）。 本发明的绝热材料在植入时增加了基板的温度。

公开(公告)号：US20080206963A1

公开(公告)日：2008-08-28

申请号：US12148318

申请日：2008-04-18

申请人： Francois J. Henley ,  Michael A. Bryan ,  William G. En

发明人： Francois J. Henley ,  Michael A. Bryan ,  William G. En

IPC分类号： H01L21/304

CPC分类号： H01L21/26506 ,  H01L21/2658 ,  H01L21/76251 ,  H01L21/76254

摘要： A method of forming substrates, e.g., silicon on insulator, silicon on silicon. The method includes providing a donor substrate, e.g., silicon wafer. The method also includes forming a cleave layer on the donor substrate that contains the cleave plane, the plane of eventual separation. In a specific embodiment, the cleave layer comprising silicon germanium. The method also includes forming a device layer (e.g., epitaxial silicon) on the cleave layer. The method also includes introducing particles into the cleave layer to add stress in the cleave layer. The particles within the cleave layer are then redistributed to form a high concentration region of the particles in the vicinity of the cleave plane, where the redistribution of the particles is carried out in a manner substantially free from microbubble or microcavity formation of the particles in the cleave plane. That is, the particles are generally at a low dose, which is defined herein as a lack of microbubble or microcavity formation in the cleave plane. The method also includes providing selected energy to the donor substrate to cleave the device layer from the cleave layer at the cleave plane, whereupon the selected energy is applied to create a controlled cleaving action to remove the device layer from a portion of the cleave layer in a controlled manner.

公开(公告)号：US07378330B2

公开(公告)日：2008-05-27

申请号：US11392452

申请日：2006-03-28

申请人： Francois J. Henley ,  Michael A. Bryan ,  William G. En

发明人： Francois J. Henley ,  Michael A. Bryan ,  William G. En

IPC分类号： H01L21/76 ,  H01L21/4763 ,  H01L29/00 ,  H01L23/44

CPC分类号： H01L21/76251 ,  H01L21/26506 ,  H01L21/76254

摘要： A method of forming substrates, e.g., silicon on insulator, silicon on silicon. The method includes providing a donor substrate, e.g., silicon wafer. The method also includes forming a cleave layer on the donor substrate that contains the cleave plane, the plane of eventual separation. In a specific embodiment, the cleave layer comprising silicon germanium. The method also includes forming a device layer (e.g., epitaxial silicon) on the cleave layer. The method also includes introducing particles into the cleave layer to add stress in the cleave layer. The particles within the cleave layer are then redistributed to form a high concentration region of the particles in the vicinity of the cleave plane, where the redistribution of the particles is carried out in a manner substantially free from microbubble or microcavity formation of the particles in the cleave plane. That is, the particles are generally at a low dose, which is defined herein as a lack of microbubble or microcavity formation in the cleave plane. The method also includes providing selected energy to the donor substrate to cleave the device layer from the cleave layer at the cleave plane, whereupon the selected energy is applied to create a controlled cleaving action to remove the device layer from a portion of the cleave layer in a controlled manner.

摘要翻译： 一种形成衬底的方法，例如绝缘体上的硅，硅上的硅。 该方法包括提供施主衬底，例如硅晶片。 该方法还包括在供体基底上形成含有切割平面的切割层，最终分离的平面。 在具体实施方案中，包含硅锗的切割层。 该方法还包括在切割层上形成器件层（例如外延硅）。 该方法还包括将颗粒引入裂解层以在切割层中增加应力。 然后将切割层内的颗粒重新分布以形成在解理面附近的颗粒的高浓度区域，其中颗粒的再分布以基本上不含微孔中的微泡或微腔形成的方式进行 劈平面 也就是说，颗粒通常为低剂量，其在本文中定义为在解理面中缺乏微泡或微腔形成。 该方法还包括向施主衬底提供所选择的能量以在解理面从裂解层切割器件层，由此施加所选择的能量以产生受控的切割作用，以将器件层从切割层的一部分去除 受控的方式。

公开(公告)号：US07056808B2

公开(公告)日：2006-06-06

申请号：US10301234

申请日：2002-11-20

申请人： Francois J. Henley ,  Michael A. Bryan ,  William G. En

发明人： Francois J. Henley ,  Michael A. Bryan ,  William G. En

IPC分类号： H01L21/8238 ,  H01L21/76 ,  H01L21/46

CPC分类号： H01L21/76251 ,  H01L21/26506 ,  H01L21/76254

摘要： A method of forming substrates, e.g., silicon on insulator, silicon on silicon. The method includes providing a donor substrate, e.g., silicon wafer. The method also includes forming a cleave layer on the donor substrate that contains the cleave plane, the plane of eventual separation. In a specific embodiment, the cleave layer comprising silicon germanium. The method also includes forming a device layer (e.g., epitaxial silicon) on the cleave layer. The method also includes introducing particles into the cleave layer to add stress in the cleave layer. The particles within the cleave layer are then redistributed to form a high concentration region of the particles in the vicinity of the cleave plane, where the redistribution of the particles is carried out in a manner substantially free from microbubble or microcavity formation of the particles in the cleave plane. That is, the particles are generally at a low dose, which is defined herein as a lack of microbubble or microcavity formation in the cleave plane. The method also includes providing selected energy to the donor substrate to cleave the device layer from the cleave layer at the cleave plane, whereupon the selected energy is applied to create a controlled cleaving action to remove the device layer from a portion of the cleave layer in a controlled manner.

公开(公告)号：US06500732B1

公开(公告)日：2002-12-31

申请号：US09626532

申请日：2000-07-27

申请人： Francois J. Henley ,  Michael A. Brayan ,  William G. En

发明人： Francois J. Henley ,  Michael A. Brayan ,  William G. En

IPC分类号： H01L2130

CPC分类号： H01L21/76254 ,  Y10T156/1158

摘要： A method of forming substrates. The method includes providing a donor substrate; and forming a cleave layer comprising a cleave plane on the donor substrate. The cleave plane extends from a periphery of the donor substrate through a center region of the substrate. The method also includes forming a device layer on the cleave layer. The method also includes selectively introducing a plurality of particles along the periphery of the cleave plane to form a higher concentration region at the periphery and a lower concentration region in the center region. Selected energy is provided to the donor substrate to initiate a cleaving action at the higher concentration region at the periphery of the cleave plane to cleave the device layer at the cleave plane.

摘要翻译： 一种形成基底的方法。 该方法包括提供施主衬底; 以及在所述供体基底上形成包含解理面的切割层。 解理面从施主衬底的周边延伸穿过衬底的中心区域。 该方法还包括在切割层上形成器件层。 该方法还包括选择性地沿着解理面的周边引入多个粒子，以在中心区域的周边形成较高的浓度区域，并在中心区域形成较低的浓度区域。 选择的能量提供给施主衬底，以在分裂面周边的较高浓度区域处引发裂解作用，以在分裂面处切割器件层。

公开(公告)号：US5790247A

公开(公告)日：1998-08-04

申请号：US721332

申请日：1996-09-26

申请人： Francois J. Henley ,  Michael A. Bryan

发明人： Francois J. Henley ,  Michael A. Bryan

IPC分类号： G01N21/958 ,  G01M11/00 ,  G01N21/88 ,  G01N21/17

CPC分类号： G01N21/8806 ,  G01N21/958

摘要： A method (500) for inspecting anomalies, which are likely defects of several types, namely, particles on the surface, scratches into surface, and defects in bulk material, is provided. This inspection method involves two types of illumination, which can be used separately or together. These two types highlight anomalies sufficiently differently to enable the defect monitoring tool to distinguish between defect type and defect location along an inspection axis. The illumination methods are direct internal side illumination (114) where the plate is used as light pipe, and external front-side illumination (117). In direct internal side illumination, a fiber optic feed (115) with flared end arranged as a line source is abutted to an edge (123) of the plate (102). In external side illumination, the source is light directed at an acute angle, preferably a grazing angle, to one of the surfaces (121). Anomalies such as dust particles on the illuminated surface will scatter light much more efficiently with external front-side illumination, than direct internal side lighting, since particles on the surface would otherwise scatter light only through weak evanescent coupling via the internal side lighting.

摘要翻译： 提供了用于检查异常的方法（500），其可能是几种类型的缺陷，即表面上的颗粒，划痕到表面和散装材料中的缺陷。 这种检查方法涉及两种类型的照明，可单独使用或一起使用。 这两种类型强调异常，使缺陷监测工具能够区分沿着检查轴的缺陷类型和缺陷位置。 照明方法是直接内侧照明（114），其中板用作光管和外部前侧照明（117）。 在直接内侧照明中，具有布置成线源的喇叭口端的光纤馈电（115）与板（102）的边缘（123）邻接。 在外侧照明中，光源以锐角（优选为掠角）指向一个表面（121）。 由于表面上的颗粒会通过内侧照明通过弱的渐逝耦合使表面上的颗粒散射光，所以像照明表面上的灰尘颗粒那样的异常将会比外部前侧照明更有效地散射光。

公开(公告)号：US08637382B2

公开(公告)日：2014-01-28

申请号：US13195259

申请日：2011-08-01

申请人： Francois J. Henley

发明人： Francois J. Henley

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： B23K26/361

摘要： A method and system for cleaving a film of material utilizing thermal flux. The method includes providing a substrate having a face and an underlying cleave region including a prepared initiation region. Additionally, the method includes subjecting the initiation region to a first thermal flux to form a cleave front separating the cleave region of the substrate to a film portion and a bulk portion. The method further includes subjecting an area of the bulk portion substantially in the vicinity of the cleave front to a second thermal flux to cause a temperature difference above and below the cleave region for inducing a propagation of the cleave front expanding the film portion to the area at the expense of the bulk portion. Furthermore, the method includes determining a scan path for the second thermal flux based on the cleave front. Moreover, the method includes scanning the second thermal flux to follow the scan path to further propagate the cleave front.

摘要翻译： 利用热通量切割材料薄膜的方法和系统。 该方法包括提供具有面和包含准备的起始区的下面的切割区的基底。 另外，该方法包括使起始区域经受第一热通量以形成将基板的切割区域分隔成膜部分和主体部分的分裂前沿。 该方法还包括将大部分的大部分区域的基本上在劈裂前端附近的区域进行第二热通量，以在裂开区域的上方和下方引起温度差异，以引起将劈裂面扩展到该区域的区域 以散装部分为代价。 此外，该方法包括基于切割前沿确定用于第二热通量的扫描路径。 此外，该方法包括扫描第二热通量以跟随扫描路径以进一步传播切割前沿。

公开(公告)号：US08124499B2

公开(公告)日：2012-02-28

申请号：US11935197

申请日：2007-11-05

申请人： Francois J. Henley ,  Albert Lamm ,  Babak Adibi

发明人： Francois J. Henley ,  Albert Lamm ,  Babak Adibi

IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76254 ,  H01L21/26506 ,  H01L21/3221

摘要： Free standing thickness of materials are fabricated using one or more semiconductor substrates, e.g., single crystal silicon, polysilicon, silicon germanium, germanium, group III/IV materials, and others. A semiconductor substrate is provided having a surface region and a thickness. The surface region of the semiconductor substrate is subjected to a first plurality of high energy particles generated using a linear accelerator to form a region of a plurality of gettering sites within a cleave region, the cleave region being provided beneath the surface region to defined a thickness of material to be detached, the semiconductor substrate being maintained at a first temperature. The surface region of the semiconductor substrate is subjected to a second plurality of high energy particles generated using the linear accelerator, the second plurality of high energy particles being provided to increase a stress level of the cleave region from a first stress level to a second stress level.

摘要翻译： 使用一个或多个半导体衬底（例如单晶硅，多晶硅，硅锗，锗，III / IV族材料等）制造材料的独立的厚度。 提供具有表面区域和厚度的半导体衬底。 半导体衬底的表面区域经受使用线性加速器产生的第一组多个高能粒子，以在裂开区域内形成多个吸杂位点的区域，该裂开区域设置在该表面区域的下方以限定厚度 的待分离材料，半导体衬底保持在第一温度。 半导体衬底的表面区域受到使用线性加速器产生的第二多个高能粒子，第二多个高能粒子被设置成将劈裂区域的应力水平从第一应力水平增加到第二应力 水平。

公开(公告)号：US08012851B2

公开(公告)日：2011-09-06

申请号：US12731069

申请日：2010-03-24

申请人： Francois J. Henley ,  Philip James Ong

发明人： Francois J. Henley ,  Philip James Ong

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L31/1804 ,  H01L31/0232 ,  H01L31/0392 ,  H01L31/03925 ,  H01L31/0725 ,  H01L31/0745 ,  H01L31/077 ,  H01L31/1872 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521

摘要： A photovoltaic cell device, e.g., solar cell, solar panel, and method of manufacture. The device has an optically transparent substrate comprises a first surface and a second surface. A first thickness of material (e.g., semiconductor material, single crystal material) having a first surface region and a second surface region is included. In a preferred embodiment, the surface region is overlying the first surface of the optically transparent substrate. The device has an optical coupling material provided between the first surface region of the thickness of material and the first surface of the optically transparent material. A second thickness of semiconductor material is overlying the second surface region to form a resulting thickness of semiconductor material.

摘要翻译： 光伏电池装置，例如太阳能电池，太阳能电池板和制造方法。 该装置具有包括第一表面和第二表面的光学透明基底。 包括具有第一表面区域和第二表面区域的材料的第一厚度（例如，半导体材料，单晶材料）。 在优选实施例中，表面区域覆盖在光学透明基板的第一表面上。 该装置具有设置在材料厚度的第一表面区域和光学透明材料的第一表面之间的光学耦合材料。 半导体材料的第二厚度覆盖在第二表面区域上以形成半导体材料的所得厚度。

公开(公告)号：US07911016B2

公开(公告)日：2011-03-22

申请号：US12695008

申请日：2010-01-27

申请人： Francois J. Henley

发明人： Francois J. Henley

IPC分类号： H01L27/14

CPC分类号： H01L21/26506 ,  H01L21/2658

摘要： A reusable transfer substrate member for forming a tiled substrate structure. The member including a transfer substrate, which has a surface region. The surface region comprises a plurality of donor substrate regions. Each of the donor substrate regions is characterized by a donor substrate thickness and a donor substrate surface region. Each of the donor substrate regions is spatially disposed overlying the surface region of the transfer substrate. Each of the donor substrate regions has the donor substrate thickness without a definable cleave region.