公开(公告)号：US20080206963A1

公开(公告)日：2008-08-28

申请号：US12148318

申请日：2008-04-18

申请人： Francois J. Henley ,  Michael A. Bryan ,  William G. En

发明人： Francois J. Henley ,  Michael A. Bryan ,  William G. En

IPC分类号： H01L21/304

CPC分类号： H01L21/26506 ,  H01L21/2658 ,  H01L21/76251 ,  H01L21/76254

摘要： A method of forming substrates, e.g., silicon on insulator, silicon on silicon. The method includes providing a donor substrate, e.g., silicon wafer. The method also includes forming a cleave layer on the donor substrate that contains the cleave plane, the plane of eventual separation. In a specific embodiment, the cleave layer comprising silicon germanium. The method also includes forming a device layer (e.g., epitaxial silicon) on the cleave layer. The method also includes introducing particles into the cleave layer to add stress in the cleave layer. The particles within the cleave layer are then redistributed to form a high concentration region of the particles in the vicinity of the cleave plane, where the redistribution of the particles is carried out in a manner substantially free from microbubble or microcavity formation of the particles in the cleave plane. That is, the particles are generally at a low dose, which is defined herein as a lack of microbubble or microcavity formation in the cleave plane. The method also includes providing selected energy to the donor substrate to cleave the device layer from the cleave layer at the cleave plane, whereupon the selected energy is applied to create a controlled cleaving action to remove the device layer from a portion of the cleave layer in a controlled manner.

公开(公告)号：US07056808B2

公开(公告)日：2006-06-06

申请号：US10301234

申请日：2002-11-20

申请人： Francois J. Henley ,  Michael A. Bryan ,  William G. En

发明人： Francois J. Henley ,  Michael A. Bryan ,  William G. En

IPC分类号： H01L21/8238 ,  H01L21/76 ,  H01L21/46

CPC分类号： H01L21/76251 ,  H01L21/26506 ,  H01L21/76254

摘要： A method of forming substrates, e.g., silicon on insulator, silicon on silicon. The method includes providing a donor substrate, e.g., silicon wafer. The method also includes forming a cleave layer on the donor substrate that contains the cleave plane, the plane of eventual separation. In a specific embodiment, the cleave layer comprising silicon germanium. The method also includes forming a device layer (e.g., epitaxial silicon) on the cleave layer. The method also includes introducing particles into the cleave layer to add stress in the cleave layer. The particles within the cleave layer are then redistributed to form a high concentration region of the particles in the vicinity of the cleave plane, where the redistribution of the particles is carried out in a manner substantially free from microbubble or microcavity formation of the particles in the cleave plane. That is, the particles are generally at a low dose, which is defined herein as a lack of microbubble or microcavity formation in the cleave plane. The method also includes providing selected energy to the donor substrate to cleave the device layer from the cleave layer at the cleave plane, whereupon the selected energy is applied to create a controlled cleaving action to remove the device layer from a portion of the cleave layer in a controlled manner.

公开(公告)号：US07378330B2

公开(公告)日：2008-05-27

申请号：US11392452

申请日：2006-03-28

申请人： Francois J. Henley ,  Michael A. Bryan ,  William G. En

发明人： Francois J. Henley ,  Michael A. Bryan ,  William G. En

IPC分类号： H01L21/76 ,  H01L21/4763 ,  H01L29/00 ,  H01L23/44

CPC分类号： H01L21/76251 ,  H01L21/26506 ,  H01L21/76254

摘要： A method of forming substrates, e.g., silicon on insulator, silicon on silicon. The method includes providing a donor substrate, e.g., silicon wafer. The method also includes forming a cleave layer on the donor substrate that contains the cleave plane, the plane of eventual separation. In a specific embodiment, the cleave layer comprising silicon germanium. The method also includes forming a device layer (e.g., epitaxial silicon) on the cleave layer. The method also includes introducing particles into the cleave layer to add stress in the cleave layer. The particles within the cleave layer are then redistributed to form a high concentration region of the particles in the vicinity of the cleave plane, where the redistribution of the particles is carried out in a manner substantially free from microbubble or microcavity formation of the particles in the cleave plane. That is, the particles are generally at a low dose, which is defined herein as a lack of microbubble or microcavity formation in the cleave plane. The method also includes providing selected energy to the donor substrate to cleave the device layer from the cleave layer at the cleave plane, whereupon the selected energy is applied to create a controlled cleaving action to remove the device layer from a portion of the cleave layer in a controlled manner.

摘要翻译： 一种形成衬底的方法，例如绝缘体上的硅，硅上的硅。 该方法包括提供施主衬底，例如硅晶片。 该方法还包括在供体基底上形成含有切割平面的切割层，最终分离的平面。 在具体实施方案中，包含硅锗的切割层。 该方法还包括在切割层上形成器件层（例如外延硅）。 该方法还包括将颗粒引入裂解层以在切割层中增加应力。 然后将切割层内的颗粒重新分布以形成在解理面附近的颗粒的高浓度区域，其中颗粒的再分布以基本上不含微孔中的微泡或微腔形成的方式进行 劈平面 也就是说，颗粒通常为低剂量，其在本文中定义为在解理面中缺乏微泡或微腔形成。 该方法还包括向施主衬底提供所选择的能量以在解理面从裂解层切割器件层，由此施加所选择的能量以产生受控的切割作用，以将器件层从切割层的一部分去除 受控的方式。

公开(公告)号：US06458723B1

公开(公告)日：2002-10-01

申请号：US09594464

申请日：2000-06-14

申请人： Francois J. Henley ,  Michael A. Bryan ,  William G. En

发明人： Francois J. Henley ,  Michael A. Bryan ,  William G. En

IPC分类号： H01L2126

CPC分类号： H01L21/67103 ,  H01J2237/2001 ,  H01J2237/31701

摘要： An ion implantation apparatus and method. The apparatus has a vacuum chamber and an ion beam generator to generate an ion beam in the vacuum chamber. The apparatus also has an implant wheel (10), in the vacuum chamber, having a plurality of circumferentially distributed substrate holding positions. Each of the substrate holding positions comprises a substrate holder (17), which includes an elastomer overlying the substrate holder (17) and a thermal insulating material (71) (e.g., quartz, silicon, ceramics, and other substantially non-compliant materials) overlying the elastomer (72). The present thermal insulating material increases a temperature of a substrate as it is implanted.

摘要翻译： 一种离子注入装置及方法。 该装置具有真空室和离子束发生器，以在真空室中产生离子束。 该设备还具有植入轮（10），其在真空室中具有多个周向分布的衬底保持位置。 每个基板保持位置包括基板保持器（17），其包括覆盖基板保持器（17）的弹性体和绝热材料（例如石英，硅，陶瓷和其他基本上不顺从的材料） 覆盖弹性体（72）。 本发明的绝热材料在植入时增加了基板的温度。

公开(公告)号：US06500732B1

公开(公告)日：2002-12-31

申请号：US09626532

申请日：2000-07-27

申请人： Francois J. Henley ,  Michael A. Brayan ,  William G. En

发明人： Francois J. Henley ,  Michael A. Brayan ,  William G. En

IPC分类号： H01L2130

CPC分类号： H01L21/76254 ,  Y10T156/1158

摘要： A method of forming substrates. The method includes providing a donor substrate; and forming a cleave layer comprising a cleave plane on the donor substrate. The cleave plane extends from a periphery of the donor substrate through a center region of the substrate. The method also includes forming a device layer on the cleave layer. The method also includes selectively introducing a plurality of particles along the periphery of the cleave plane to form a higher concentration region at the periphery and a lower concentration region in the center region. Selected energy is provided to the donor substrate to initiate a cleaving action at the higher concentration region at the periphery of the cleave plane to cleave the device layer at the cleave plane.

摘要翻译： 一种形成基底的方法。 该方法包括提供施主衬底; 以及在所述供体基底上形成包含解理面的切割层。 解理面从施主衬底的周边延伸穿过衬底的中心区域。 该方法还包括在切割层上形成器件层。 该方法还包括选择性地沿着解理面的周边引入多个粒子，以在中心区域的周边形成较高的浓度区域，并在中心区域形成较低的浓度区域。 选择的能量提供给施主衬底，以在分裂面周边的较高浓度区域处引发裂解作用，以在分裂面处切割器件层。

公开(公告)号：US07456062B1

公开(公告)日：2008-11-25

申请号：US11209871

申请日：2005-08-23

申请人： William G. En ,  Thorsten Kammler ,  Eric N. Paton ,  Paul R. Besser ,  Simon Siu-Sing Chan

发明人： William G. En ,  Thorsten Kammler ,  Eric N. Paton ,  Paul R. Besser ,  Simon Siu-Sing Chan

IPC分类号： H01L21/8238 ,  H01L21/336 ,  H01L21/3205 ,  H01L21/4763

CPC分类号： H01L29/7834 ,  H01L21/28035 ,  H01L21/28123 ,  H01L29/42376 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66628

摘要： A sidewall spacer structure is formed adjacent to a gate structure whereby a material forming an outer surface of the sidewall spacer structure contains nitrogen. Subsequent to its formation the sidewall spacer structure is annealed to harden the sidewall spacer structure from a subsequent cleaning process. An epitaxial layer is formed subsequent to the cleaning process.

公开(公告)号：US07402207B1

公开(公告)日：2008-07-22

申请号：US10839378

申请日：2004-05-05

申请人： Paul R. Besser ,  Eric N. Paton ,  William G. En

发明人： Paul R. Besser ,  Eric N. Paton ,  William G. En

IPC分类号： C30B21/04

CPC分类号： C30B25/16 ,  G01B11/0616 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67745 ,  Y10T117/1004 ,  Y10T117/1008

摘要： Methods and systems for permitting thickness control of the selective epitaxial growth (SEG) layer in a semiconductor manufacturing process, for example raised source/drain applications in CMOS technologies, are presented. These methods and systems provide the capability to measure the thickness of an SEG film in-situ utilizing optical ellipsometry equipment during or after SEG layer growth, prior to removing the wafer from the SEG growth tool. Optical ellipsometry equipment can be integrated into the SEG platform and control software, thus providing automated process control (APC) capability for SEG thickness. The integration of the ellipsometry equipment may be varied, dependent upon the needs of the fabrication facility, e.g., integration to provide ellipsometer monitoring of a single process tool, or multiple tool monitoring, among other configurations.

摘要翻译： 提出了在半导体制造工艺中允许厚度控制选择性外延生长（SEG）层的方法和系统，例如CMOS技术中的升高的源/漏应用。 这些方法和系统提供了在从SEG生长工具移除晶片之前在SEG层生长期间或之后使用光学椭偏仪设备原位测量SEG膜的厚度的能力。 光学椭圆测量设备可以集成到SEG平台和控制软件中，从而为SEG厚度提供自动化过程控制（APC）能力。 椭圆测量设备的集成可以根据制造设施的需要而变化，例如集成以提供单个处理工具的椭偏仪监控，或者多个工具监视以及其他配置。

公开(公告)号：US06518631B1

公开(公告)日：2003-02-11

申请号：US09824418

申请日：2001-04-02

申请人： William G. En ,  Srinath Krishnan ,  Dong-Hyuk Ju ,  Bin Yu

发明人： William G. En ,  Srinath Krishnan ,  Dong-Hyuk Ju ,  Bin Yu

IPC分类号： H01L31113

CPC分类号： H01L29/6653 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78621

摘要： A transistor device formed on a semiconductor-on-insulator (SOI) substrate with a buried oxide (BOX) layer disposed thereon and an active layer disposed on the BOX layer having active regions defined by isolation trenches. The device includes a gate defining a channel interposed between a source and a drain formed within the active region of the SOI substrate. Further, the device includes a plurality of thin silicide layers formed on the source and the drain. Additionally, at least an upper silicide layer of the plurality of thin silicide layers extends beyond a lower silicide layer. Further still, the device includes a plurality of spacers used in the formation of the device. The device further includes a second plurality of thin silicide layers formed on a polysilicon electrode of the gate.

摘要翻译： 一种在绝缘体上半导体（SOI）衬底上形成的埋置氧化物（BOX）层的晶体管器件，以及设置在具有由隔离沟槽限定的有源区域的BOX层上的有源层。 该器件包括限定插入在SOI衬底的有源区域内形成的源极和漏极之间的沟道的栅极。 此外，该器件包括形成在源极和漏极上的多个薄硅化物层。 另外，多个薄硅化物层中的至少一个上硅化物层延伸超过下硅化物层。 此外，该装置还包括用于形成装置的多个间隔物。 该器件还包括形成在栅极的多晶硅电极上的第二多个薄硅化物层。

公开(公告)号：US06492830B1

公开(公告)日：2002-12-10

申请号：US09845860

申请日：2001-04-30

申请人： Dong-Hyuk Ju ,  William G. En

发明人： Dong-Hyuk Ju ,  William G. En

IPC分类号： G01R3102

CPC分类号： G01R31/2621

摘要： According to the invention, a method and circuit for measuring a transient of a MOFSET device under measurement of an SOI is provided. The device under measurement is connected from its drain to a measuring circuit having a trip point switching circuit. A supply voltage is applied to the drain through a capacitor connected to ground. When a high to low voltage pulse is applied to the source of the device, the threshold trip point can be determined whereby the dump charge through the transistor device can be determined.

摘要翻译： 根据本发明，提供了一种用于测量SOI测量下的MOFSET器件的瞬变的方法和电路。 被测器件从其漏极连接到具有跳变点切换电路的测量电路。 电源电压通过连接到地的电容器施加到漏极。 当向器件的源极施加高电压到低电压脉冲时，可以确定阈值跳变点，由此可以确定通过晶体管器件的放电电荷。

公开(公告)号：US06358362B1

公开(公告)日：2002-03-19

申请号：US09515321

申请日：2000-02-29

申请人： William G. En ,  Allison Holbrook ,  Fei Wang

发明人： William G. En ,  Allison Holbrook ,  Fei Wang

IPC分类号： G01I346

CPC分类号： B24B37/013 ,  H01J37/32935 ,  H01J37/32963 ,  H01L21/67253 ,  H01L22/26

摘要： An arrangement is provided for collecting, measuring and analyzing at least two specific wavelengths of optical emissions produced while etching a semiconductor wafer in a plasma chamber to determine an optimal endpoint for the etching process. The arrangement includes a sensor for gathering optical emissions, an interface for converting the intensity of optical emissions into corresponding electrical signals, and a controller for determining an optimal endpoint based on the corresponding electrical signals for the two specific wavelengths and other predetermined threshold data.

摘要翻译： 提供了一种用于收集，测量和分析在蚀刻等离子体室中的半导体晶片时产生的至少两个特定波长的光发射以确定用于蚀刻工艺的最佳端点的装置。 该装置包括用于收集光发射的传感器，用于将光发射强度转换成相应电信号的接口，以及用于基于两个特定波长和其它预定阈值数据的对应电信号确定最佳端点的控制器。