-
公开(公告)号：US06284674B1
公开(公告)日：2001-09-04
申请号：US09705947
申请日：2000-11-06
申请人： Makoto Toraguchi , Satoru Kawakami
发明人： Makoto Toraguchi , Satoru Kawakami
IPC分类号： H01L2126
CPC分类号： H01J37/32192 , C23C16/4405 , C23C16/511 , H01J37/3266 , H01L21/31612
摘要： Disclosed is a plasma process apparatus which permits generating microwaves and a magnetic field so as to bring about electron cyclotron resonance and, thus, to generate a plasma which is applied to a semiconductor wafer, comprising microwave generating means for generating said microwaves, microwave transmitting means for transmitting the microwaves, a process chamber having said semiconductor wafer arranged therein, the microwaves being introduced into said process chamber through said microwave transmitting means, process gas supply means for supplying a process gas into said process chamber, and magnetic field generating means for generating a magnetic field within the process chamber. The frequency of the microwave falls within a range between a lower limit of a cutoff frequency determined by the inner diameter of the process chamber and an upper limit of a maximum frequency at which a standing wave of the microwave does not occur on the surface of the object.
摘要翻译： 公开了一种允许产生微波和磁场的等离子体处理装置，以产生电子回旋共振，从而产生施加到半导体晶片的等离子体，其包括用于产生所述微波的微波产生装置，微波发射装置 为了传输微波，具有布置在其中的所述半导体晶片的处理室，所述微波通过所述微波传输装置引入所述处理室，用于将处理气体供应到所述处理室中的处理气体供应装置，以及用于产生 处理室内的磁场。 微波的频率落在由处理室的内径确定的截止频率的下限与微波的驻波不在其表面上发生的最大频率的上限之间的范围内 目的。
-
公开(公告)号：US6027700A
公开(公告)日：2000-02-22
申请号：US883326
申请日：1997-06-26
CPC分类号： C01B13/10 , C01B13/11 , C01B2201/90
摘要： Ozone production facilities comprising oxygen production facilities as a starting gas supply source, an ozonizer, and an ozone analyzer, and adapted to supply the starting gas by the oxygen production facilities, ozonize the starting gas by the ozonizer to produce an ozone-containing gas; the ozone production facilities further including liquid oxygen facilities as another starting gas supply source, and an oxygen flowmeter for monitoring the flow rate of oxygen supplied by the liquid oxygen facilities. A method of operating the ozone production facilities comprises supplying the starting gas from the oxygen production facilities alone to the ozonizer when the consumption of oxygen is within the production capacity of the oxygen production facilities; or mixing pure oxygen gas from the liquid oxygen facilities with the gas from the oxygen production facilities, and supplying the resulting mixed gas as the starting gas to the ozonizer, when the consumption of oxygen exceeds the production capacity of the oxygen production facilities. Thus, the ozone production facilities, even if small in scale, can always supply an ozone-containing gas having an arbitrary ozone concentration, ranging from the maximum to a lower concentration.
摘要翻译： 臭氧生产设备包括氧气生产设备作为起始气体供应源，臭氧发生器和臭氧分析仪，并且适于通过氧气生产设备供应起始气体，由臭氧发生器臭氧化起始气体以产生含臭氧气体; 臭氧生产设备还包括作为另一起始气体供应源的液氧设备，以及用于监测由液氧设备供应的氧气流量的氧气流量计。 操作臭氧生产设备的方法包括：当氧气消耗在氧气生产设备的生产能力内时，从氧气生产设备单独向臭氧机提供起始气体; 或者将来自氧气设备的纯氧气与来自氧气生产设备的气体混合，并且当氧气消耗超过氧气生产设备的生产能力时，将所得混合气体作为起始气体供应到臭氧发生器。 因此，臭氧生产设施即使规模小，也可以随时提供臭氧浓度范围从最高到较低浓度的含臭氧气体。
-
公开(公告)号：US5160152A
公开(公告)日：1992-11-03
申请号：US667749
申请日：1991-03-11
IPC分类号： H01L21/00 , H01L21/683
CPC分类号： H01L21/67103 , H01L21/6831 , H01L21/6833 , Y10T279/23
摘要： Herein provided is an electrostatic chuck whose surface is processed so as to have projections and recesses, which has a simple structure and which makes it possible to establish a uniform temperature distribution on a wafer surface when the wafer is held on the processed surface thereof through the use of an electrostatic attractive force. The uneven surface configuration of the electrostatic chuck is designed so that the proportion of the area occupied by the projected surface in the peripheral portion, i.e., in the relatively outer region of the surface, is smaller than that of the area occupied by the projected surface in the central portion, i.e., in the relatively inner region of the surface of the electrostatic chuck, in order to change the rate of heat transmission so as to be larger in the central portion than in the peripheral portion between the wafer and the electrostatic chuck. In this case, the height of the projections is limited to the range of from 10 to 70 .mu.m so as to perform effective control of the temperature distribution on the wafer by such adjustment of the proportion of the area occupied by the projections.
摘要翻译： 这里提供了一种静电卡盘，其表面被加工成具有突起和凹槽，其具有简单的结构，并且当晶片被保持在其处理表面上时可以在晶片表面上建立均匀的温度分布 使用静电吸引力。 静电卡盘的不平坦的表面结构被设计成使得周边部分（即，在表面的相对外部区域）中的投影表面占据的面积的比例小于由投影表面占据的面积的比例 在中心部分，即在静电卡盘的表面的相对内部区域中，为了改变中心部分的热传递速率比在晶片和静电卡盘之间的周边部分更大 。 在这种情况下，突起的高度被限制在10至70μm的范围内，从而通过调节突起占据的面积的比例来有效地控制晶片上的温度分布。
-
公开(公告)号：US06161498A
公开(公告)日：2000-12-19
申请号：US885954
申请日：1997-06-30
申请人： Makoto Toraguchi , Satoru Kawakami
发明人： Makoto Toraguchi , Satoru Kawakami
IPC分类号： C23C16/44 , C23C16/511 , H01J37/32 , H01L21/316
CPC分类号： H01J37/32192 , C23C16/4405 , C23C16/511 , H01J37/3266 , H01L21/31612
摘要： Disclosed is a plasma process apparatus which permits generating microwaves and a magnetic field so as to bring about electron cyclotron resonance and, thus, to generate a plasma which is applied to a semiconductor wafer, comprising microwave generating means for generating said microwaves, microwave transmitting means for transmitting the microwaves, a process chamber having said semiconductor wafer arranged therein, the microwaves being introduced into said process chamber through said microwave transmitting means, process gas supply means for supplying a process gas into said process chamber, and magnetic field generating means for generating a magnetic field within the process chamber. The frequency of the microwave falls within a range between a lower limit of a cutoff frequency determined by the inner diameter of the process chamber and an upper limit of a maximum frequency at which a standing wave of the microwave does not occur on the surface of the object.
摘要翻译： 公开了一种允许产生微波和磁场的等离子体处理装置，以产生电子回旋共振，从而产生施加到半导体晶片上的等离子体，其包括用于产生所述微波的微波产生装置，微波发射装置 为了传输微波，具有布置在其中的所述半导体晶片的处理室，所述微波通过所述微波传输装置引入所述处理室，用于将处理气体供应到所述处理室中的处理气体供应装置，以及用于产生 处理室内的磁场。 微波的频率落在由处理室的内径确定的截止频率的下限与微波的驻波不在其表面上发生的最大频率的上限之间的范围内 目的。
-
公开(公告)号：US5948485A
公开(公告)日：1999-09-07
申请号：US626455
申请日：1996-04-02
IPC分类号： C23C16/50 , C23C16/511 , H01J37/32 , H01L21/205 , H01L21/31 , H01L21/316 , H01L21/3205 , H05H1/18 , H05H1/30
CPC分类号： H01J37/32192 , H01J37/32678 , H01L21/02131 , H01L21/02164 , H01L21/02274 , H01L21/31612 , H01L21/31629
摘要： A plasma generating gas and a reactive gas are fed into a vacuum container. A magnetic field and microwaves for plasma generation are applied to the vacuum container, whereupon plasma is generated by ECR, and whereupon, for example, an SiO.sub.2 or SiOF film is formed on aluminum wiring. In the initial phase of film deposition, the level of the radio-frequency power for plasma lead-in applied to the stage is adjusted, for example, to zero (first value includes zero) in advance. Then, after the SiO.sub.2 or SiOF film has been deposited to a thickness of tens of nanometers, for example, the radio-frequency power for plasma lead-in is adjusted to a normal power level (second value) and applied to the stage. Thereupon, an intensive anisotropic plasma is generated, and a potential distribution corresponding to the self-bias is formed in the plane direction of the wafer. Since the thin SiO.sub.2 film is formed on the wafer surface, however, the voltage applied to any existing gate oxide film is lowered by this insulating film. Thus, the gate oxide film can be prevented from being damaged.
摘要翻译： 将等离子体产生气体和反应性气体进料到真空容器中。 将用于等离子体产生的磁场和微波应用于真空容器，由此通过ECR产生等离子体，因此例如在铝布线上形成SiO 2或SiOF膜。 在膜沉积的初始阶段，施加到载物台的等离子体引入的射频功率的电平例如预先调整为零（第一值包括零）。 然后，例如，在SiO 2或SiOF膜沉积到几十纳米的厚度之后，将等离子体引入的射频功率调节到正常功率电平（第二值）并施加到级。 于是，产生强烈的各向异性等离子体，并且在晶片的平面方向上形成对应于自偏压的电位分布。 然而，由于薄膜SiO 2膜形成在晶片表面上，所以施加到任何现有栅极氧化膜上的电压被该绝缘膜降低。 因此，能够防止栅极氧化膜的损伤。
-
公开(公告)号：US06277248B1
公开(公告)日：2001-08-21
申请号：US09478218
申请日：2000-01-05
IPC分类号： B01J1908
CPC分类号： C01B13/10 , C01B13/11 , C01B2201/90
摘要： A method of operating ozone production facilities comprises supplying a starting gas from oxygen production facilities alone to an ozonizer when the consumption of oxygen is within the production capacity of the oxygen production facilities; or mixing pure oxygen gas from liquid oxygen facilities with the gas from the oxygen production facilities, and supplying the resulting mixed gas as the starting gas to the ozonizer, when the consumption of oxygen exceeds the production capacity of the oxygen production facilities. Thus, the ozone production facilities, even if small in scale, can always supply an ozone-containing gas having an arbitrary ozone concentration, ranging from the maximum to a lower concentration.
摘要翻译： 操作臭氧生产设备的方法包括：当氧气消耗在氧气生产设备的生产能力内时，将氧气生产设备的起始气体单独供应给臭氧发生器; 或者将来自液氧设备的纯氧气与来自氧气生产设备的气体混合，并且当氧气消耗超过氧气生产设备的生产能力时，将所得混合气体作为起始气体供应到臭氧发生器。 因此，臭氧生产设施即使规模小，也可以随时提供臭氧浓度范围从最高到较低浓度的含臭氧气体。
-
公开(公告)号：US6027701A
公开(公告)日：2000-02-22
申请号：US863949
申请日：1997-05-27
CPC分类号： C01B13/11 , C01B2201/14 , C01B2201/22 , C01B2201/76
摘要： An ozone generator includes a vessel provided at one end with a feed gas chamber for receiving a feed gas through an inlet and at the other end with an ozonized gas chamber, communicating with an outlet, for receiving an ozonized gas, a cylindrical tube ground electrode having a dielectric on an inner peripheral surface for communicating the feed gas chamber with ozonized gas chamber, a hollow cylindrical high voltage electrode having a predetermined discharge gap with respect to the dielectric and disposed concentrically with the cylindrical tube ground electrode, and a high frequency power source for applying a voltage between the ground electrode and the high voltage electrode. Cooling water is supplied to a water jacket surrounding the ground electrode and formed within the vessel and to the hollow cylindrical high voltage electrode to cool both electrodes. The cylindrical tube ground electrode and the hollow cylindrical high voltage electrode define an ozone generating tube, and the ozone generator incorporates a plurality of the ozone generating tubes.
摘要翻译： 一种臭氧发生器包括一个容器，其一端设置有进料气室，用于通过入口接收进料气体，另一端设置有臭氧化气体室，与出口连通，用于接收臭氧化气体，圆筒管接地电极 在内周面上具有电介质，用于使进料气室与臭氧化气体室连通，相对于电介质具有预定放电间隙的中空圆柱形高压电极，并且与圆柱形管接地电极同心设置，并且具有高频功率 用于在接地电极和高压电极之间施加电压的源极。 将冷却水供给到围绕接地电极的水套，并形成在容器内和中空的圆柱形高压电极上以冷却两个电极。 圆筒管接地电极和中空圆柱形高压电极限定臭氧发生管，臭氧发生器并入多个臭氧发生管。
-
-
-
-
-
-
搜索结果
7 条记录 (耗时 0.01 秒)
