Polymeric barrier removal polishing slurry
    71.
    发明申请
    Polymeric barrier removal polishing slurry 审中-公开
    聚合物屏障去除抛光浆料

    公开(公告)号:US20100159807A1

    公开(公告)日:2010-06-24

    申请号:US12317550

    申请日:2008-12-22

    申请人: Jinru Bian Qiangiu Ye

    发明人: Jinru Bian Qiangiu Ye

    IPC分类号: B24B7/20 C09K13/00

    摘要: The aqueous slurry is useful for chemical mechanical polishing semiconductor substrates having copper interconnects. The slurry includes by weight percent, 0 to 25 oxidizing agent, 1 to 50 abrasive particles, 0.001 to 10 inhibitor for decreasing static etch of the copper interconnects, 0.001 to 5 poly(methyl vinyl ether) having a formula as follows: and the poly(methyl vinyl ether) is water soluble and n has a value of at least 5, 0 to 10 copper complexing agent formed during polishing and balance water.

    摘要翻译: 含水浆料可用于具有铜互连的化学机械抛光半导体衬底。 浆料包括重量百分比为0至25的氧化剂,1至50种磨料颗粒,0.001至10种用于减少铜互连的静态蚀刻的抑制剂,0.001至5具有下式的聚(甲基乙烯基醚):和聚 (甲基乙烯基醚)是水溶性的,n具有在抛光和平衡水期间形成的至少5至10个铜络合剂的值。

    ENDPOINT CONTROL OF MULTIPLE-WAFER CHEMICAL MECHANICAL POLISHING
    72.
    发明申请
    ENDPOINT CONTROL OF MULTIPLE-WAFER CHEMICAL MECHANICAL POLISHING 审中-公开
    多波长化学机械抛光的端点控制

    公开(公告)号:US20100120331A1

    公开(公告)日:2010-05-13

    申请号:US12267473

    申请日:2008-11-07

    IPC分类号: B24B49/02 B24B7/20 B24B49/12

    CPC分类号: B24B37/013 B24B49/12

    摘要: A computer-implemented method includes polishing substrates simultaneously in a polishing apparatus. Each substrate has a polishing rate independently controllable by an independently variable polishing parameter. Measurement data that varies with the thickness of each of the substrates is acquired from each of the substrates during polishing with an in-situ monitoring system. A projected time at which each substrate will reach a target thickness is determined based on the measurement data. The polishing parameter for at least one substrate is adjusted to adjust the polishing rate of the at least one substrate such that the substrates reach the target thickness closer to the same time than without the adjustment.

    摘要翻译: 计算机实现的方法包括在抛光装置中同时抛光衬底。 每个基底具有通过独立可变抛光参数独立控制的抛光速率。 随着每个基板的厚度变化的测量数据在用原位监测系统进行抛光时从每个基板获得。 基于测量数据确定每个基板将达到目标厚度的预计时间。 调整用于至少一个基板的抛光参数以调节至少一个基板的抛光速率,使得基板达到比不进行调整更接近于目标厚度。

    Predictive Method to Improve within Wafer CMP Uniformity through Optimized Pad Conditioning
    73.
    发明申请
    Predictive Method to Improve within Wafer CMP Uniformity through Optimized Pad Conditioning 有权
    通过优化垫调节来提高晶圆CMP均匀性的预测方法

    公开(公告)号:US20100112900A1

    公开(公告)日:2010-05-06

    申请号:US12265242

    申请日:2008-11-05

    摘要: A method of conditioning a CMP polishing pad to attain a desired thickness profile in a polished layer on a wafer is disclosed. The incoming thickness profile of the layer to be polished, the thickness profile of the polishing pad, a polish rate of layer as a function of pressure and the removal rate of polishing pad material by a conditioning block are used to compute a sweep pattern for the conditioning block which will produce a desired thickness profile on the polishing pad. The method may be applied to maintaining the desired profile on the polishing pad during the course of polishing multiple wafers. The pad profile may be adjusted to keep pressure between the pad and the wafer to a safe limit to reduce polishing defects.

    摘要翻译: 公开了一种调节CMP抛光垫以在晶片上的抛光层中获得期望的厚度分布的方法。 被研磨层的入射厚度分布,抛光垫的厚度分布,作为压力的函数的层的抛光速率和由调节块的抛光垫材料的去除速率用于计算扫描图案 这将在抛光垫上产生所需的厚度分布。 该方法可以应用于在抛光多个晶片的过程中在抛光垫上保持期望的轮廓。 可以调节焊盘轮廓以将焊盘和晶片之间的压力保持在安全限度以减少抛光缺陷。

    CD REPAIR APPARATUS
    74.
    发明申请
    CD REPAIR APPARATUS 审中-公开
    CD修理装置

    公开(公告)号:US20100087124A1

    公开(公告)日:2010-04-08

    申请号:US12247097

    申请日:2008-10-07

    申请人: FARZAD SAGHIAN

    发明人: FARZAD SAGHIAN

    IPC分类号: B24B1/00 B24B7/20

    CPC分类号: B24B29/04 G11B5/8408

    摘要: An apparatus for repairing a surface of a media storage disc is disclosed. The apparatus comprises an exterior housing having an upper lid rendered with an upper lid shaft and a base portion that includes a platform for holding the media storage disc. The disc is placed on the platform with the bottom surface facing upwards and secured by at least one locking mechanism. The apparatus further includes an abrasive pad system attached to the upper lid. The abrasive pad system includes an abrasive pad holder, at least three springs evenly arranged between a top side and a bottom side of the abrasive pad holder. The springs distribute an even amount of pressure on the media storage disc. A plurality of abrasive pads is fixed to the bottom side of the abrasive pad holder. The media storage disc is sanded, buffed, and waxed with a plurality of abrasive pads.

    摘要翻译: 公开了一种修复介质存储盘表面的装置。 该装置包括外壳,其具有由上盖轴构成的上盖和包括用于保持介质存储盘的平台的基部。 盘被放置在平台上,底面朝上并由至少一个锁定机构固定。 该装置还包括附接到上盖的磨料垫系统。 研磨垫系统包括研磨垫保持器,至少三个均匀地布置在磨料垫保持器的顶侧和底侧之间的弹簧。 弹簧在介质存储盘上分配均匀的压力。 多个研磨垫固定到研磨垫保持器的底侧。 介质储存盘用多个研磨垫打磨,抛光和打蜡。

    APPARATUS AND METHOD FOR REDUCING REMOVAL FORCES FOR CMP PADS
    75.
    发明申请
    APPARATUS AND METHOD FOR REDUCING REMOVAL FORCES FOR CMP PADS 失效
    用于减少CMP PADS的去除力的装置和方法

    公开(公告)号:US20090298395A1

    公开(公告)日:2009-12-03

    申请号:US12535445

    申请日:2009-08-04

    申请人: Trent T. Ward

    发明人: Trent T. Ward

    摘要: An improvement in a polishing apparatus for planarizing substrates comprises a tenacious coating of a low-adhesion material to the platen surface. An expendable polishing pad is adhesively attached to the low-adhesion material, and may be removed for periodic replacement at much reduced expenditure of force. Polishing pads joined to low-adhesion materials such as polytetrafluoroethylene (PTFE) by conventional adhesives resist distortion during polishing but are readily removed for replacement.

    摘要翻译: 用于平坦化基板的抛光装置的改进包括对压板表面的低粘附材料的坚固涂层。 消耗性抛光垫粘附到低粘附材料上,并且可以以大大减少的力消耗来去除周期性更换。 通过常规粘合剂连接到诸如聚四氟乙烯(PTFE)的低附着材料的抛光垫在抛光过程中可以抵抗变形,但是容易取出来进行更换。

    CONFIGURING OF LAPPING AND POLISHING MACHINES
    76.
    发明申请
    CONFIGURING OF LAPPING AND POLISHING MACHINES 有权
    配置抛光机

    公开(公告)号:US20090280721A1

    公开(公告)日:2009-11-12

    申请号:US12437238

    申请日:2009-05-07

    CPC分类号: B24B49/18 B24B53/017

    摘要: A lapping or polishing machine includes a material having a first finishing surface to process a surface of a work item, a measuring tool to measure a contour of the first finishing surface, and a conditioning tool having a second finishing surface to process the first finishing surface to reduce a difference between the measured contour and a desired contour of the first finishing surface.

    摘要翻译: 研磨抛光机包括具有处理工件的表面的第一精加工表面的材料,用于测量第一精加工表面的轮廓的测量工具和具有第二精加工表面以用于处理第一精加工表面的调节工具 以减小测量轮廓与第一精加工表面的期望轮廓之间的差异。

    POLISHING SYSTEM HAVING A TRACK
    77.
    发明申请
    POLISHING SYSTEM HAVING A TRACK 失效
    具有轨迹的抛光系统

    公开(公告)号:US20090258574A1

    公开(公告)日:2009-10-15

    申请号:US12420996

    申请日:2009-04-09

    摘要: Embodiments described herein relate to a track system in a polishing system. One embodiment described herein provides a track system configured to transfer polishing heads in a polishing system. The track system comprises a supporting frame, a track coupled to the supporting frame and defining a path along which the polishing heads are configured to move, and one or more carriages configured to carry at least one polishing head along the path defined by the track, wherein the one or more carriages are coupled to the track and independently movable along the track.

    摘要翻译: 本文所述的实施例涉及抛光系统中的轨道系统。 本文所述的一个实施例提供了一种配置成在抛光系统中传送抛光头的轨道系统。 轨道系统包括支撑框架,轨道,其联接到支撑框架并且限定抛光头被配置为移动的路径,以及一个或多个托架,其构造成沿着由轨道限定的路径承载至少一个抛光头, 其中所述一个或多个托架联接到所述轨道并且可以沿着所述轨道独立地移动。

    COPPER CMP POLISHING PAD CLEANING COMPOSITION COMPRISING OF AMIDOXIME COMPOUNDS
    78.
    发明申请
    COPPER CMP POLISHING PAD CLEANING COMPOSITION COMPRISING OF AMIDOXIME COMPOUNDS 审中-公开
    含有AMIDOXIME化合物的COPPER CMP抛光垫清洁组合物

    公开(公告)号:US20090137191A1

    公开(公告)日:2009-05-28

    申请号:US12260602

    申请日:2008-10-29

    申请人: Wai Mun Lee

    发明人: Wai Mun Lee

    摘要: The present invention relates to methods of using amidoxime compositions for cleaning polishing pads, particularly after chemical mechanical planarization or polishing is provided. A polishing pad is cleaned of Cu CMP by-products, subsequent to or during planarizing a wafer, to reduce pad-glazing by applying to the polishing pad surface a composition comprising an aqueous amidoxime compound solution in water.

    摘要翻译: 本发明涉及使用偕胺肟组合物清洗抛光垫的方法,特别是在提供化学机械平面化或抛光之后。 在平坦化晶片之后或期间,在抛光垫上清洗Cu CMP副产物,通过向抛光垫表面施加包含水中偕胺肟混合溶液的组合物来减少抛光垫。

    Loading Device of Chemical Mechanical Polishing Equipment for Semiconductor Wafers
    79.
    发明申请
    Loading Device of Chemical Mechanical Polishing Equipment for Semiconductor Wafers 有权
    半导体晶片化学机械抛光设备的装载装置

    公开(公告)号:US20090130955A1

    公开(公告)日:2009-05-21

    申请号:US12088751

    申请日:2006-07-21

    CPC分类号: B24B37/345

    摘要: A loading device of chemical mechanical polishing (CMP) equipment for processing semiconductor wafers is provided. The loading device includes a loading cup having a cup-like bath, a cup plate installed in the bath, and a loading plate supported on the cup plate for absorbing shock and seating the wafer. A driving device and a driving shaft horizontally pivot and vertically move the loading cup between a platen of a polishing apparatus and a spindle. An arm connects the loading cup and the driving shaft. At least one through hole is located in a mutually corresponding position of the bath, the cup plate, and the loading plate of the loading cup. A probe assembly optically detects a polished thickness at a polished point on the wafer.

    摘要翻译: 提供了用于处理半导体晶片的化学机械抛光(CMP)设备的装载装置。 装载装置包括具有杯形浴的装载杯,安装在浴中的杯板,以及支撑在杯板上用于吸收冲击和安放晶片的装载板。 驱动装置和驱动轴水平地枢转并且将加载杯垂直移动在抛光装置的压板和主轴之间。 手臂连接装载杯和驱动轴。 至少一个通孔位于浴槽,杯板和装载杯的装载板的相应对应位置。 探针组件在晶片的抛光点处光学地检测抛光的厚度。

    Polishing apparatus and polishing method
    80.
    发明申请
    Polishing apparatus and polishing method 有权
    抛光设备和抛光方法

    公开(公告)号:US20090111358A1

    公开(公告)日:2009-04-30

    申请号:US12289507

    申请日:2008-10-29

    IPC分类号: B24B49/00 B24B49/16 B24B7/20

    CPC分类号: B24B37/013 B24B49/16

    摘要: The present invention provides a apparatus for polishing an object material such as a film on a substrate. This apparatus includes a polishing table for holding a polishing pad having a polishing surface, a motor configured to drive the polishing table, a holding mechanism configured to hold a substrate having an object material to be polished and to press the substrate against the polishing surface, a dresser configured to dress the polishing surface, and a monitoring unit configured to monitor a removal amount of the object material. The monitoring unit is operable to calculate the removal amount of the object material using a model equation containing a variable representing an integrated value of a torque current of the motor when polishing the object material and a variable representing a cumulative operating time of the dresser.

    摘要翻译: 本发明提供一种用于在基板上研磨诸如膜的物体材料的装置。 该设备包括:用于保持具有抛光表面的抛光垫的抛光台,构造成驱动抛光台的电机;保持机构,其构造成保持具有待抛光物体的基板,并将基板压靠在抛光表面上; 修整器,其被配置为修整抛光表面;以及监视单元,被配置为监视对象材料的移除量。 监视单元可操作以使用包含表示电机的转矩电流的积分值的变量的模型方程来计算物体材料的去除量,以及表示修整器的累积操作时间的变量。