Abstract:
Embodiments described herein relate to a track system in a polishing system. One embodiment described herein provides a track system configured to transfer polishing heads in a polishing system. The track system comprises a supporting frame, a track coupled to the supporting frame and defining a path along which the polishing heads are configured to move, and one or more carriages configured to carry at least one polishing head along the path defined by the track, wherein the one or more carriages are coupled to the track and independently movable along the track.
Abstract:
A chemical mechanical polisher comprises a polishing platen capable of supporting a polishing pad, and first and second substrate carriers that are each capable of holding a substrate against the polishing pad. First and second slurry dispensers, each comprise (i) an arm comprising a pivoting end and a distal end, (ii) at least one slurry dispensing nozzle on the distal end, and (iii) a dispenser drive capable of rotating the arm about the pivoting end to swing the slurry dispensing nozzle at the distal end to dispense slurry across the polishing platen.
Abstract:
A method and apparatus for monitoring polishing pad conditioning mechanisms is provided. In one embodiment, a semiconductor substrate polishing system includes a rinse station, a polishing surface, a conditioning element, and a conditioning mechanism. The conditioning mechanism selectively positions the conditioning element over the polishing surface and over the rinse station. At least one sensor is provided and is configured to detect a first position and a second position of the conditioning element when disposed over the rinse station.
Abstract:
A method for electrochemical mechanical polishing (ECMP) is disclosed. The polishing rate and surface finish of the layer on the wafer are improved by controlling the surface speed of both the platen and head, controlling the current applied to the pad, and preselecting the density of the perforations on the fully conductive polishing pad. ECMP produces much higher removal rates, good surface finishes, and good planarization efficiency at a lower down force. Generally, increasing the surface speed of both the platen and the head will increase the surface smoothness. Also, increasing the current density on the wafer will increase the surface smoothness. There is virtually no difference in the smoothness of the wafer surface between the center, middle, and edge of the wafer. For copper, removal rates of 10,000 Å/min and greater can be achieved.
Abstract:
Embodiments of a system and method for polishing substrates are provided. In one embodiment, a polishing system is provided that includes a polishing module, a cleaner and a robot. The robot has a range of motion sufficient to transfer substrates between the polishing module and cleaner. The polishing module includes at least two polishing stations, at least one load cup and at least four polishing heads. The polishing heads are configured to move independently between the at least two polishing stations and the at least one load cup.
Abstract:
A method for conditioning an Ecmp pad is provided. In one embodiment, a method for electrochemically processing a substrate includes the steps of providing an electrical bias voltage between the top surface of the pad assembly and an electrode, and electrochemically removing contaminants from the top surface of the pad.
Abstract:
A method and apparatus for monitoring polishing pad conditioning mechanisms is provided. In one embodiment, a semiconductor substrate polishing system includes a rinse station, a polishing surface, a conditioning element, and a conditioning mechanism. The conditioning mechanism selectively positions the conditioning element over the polishing surface and over the rinse station. At least one sensor is provided and is configured to detect a first position and a second position of the conditioning element when disposed over the rinse station.
Abstract:
Embodiments of a load cup for transferring a substrate are provided. The load cup includes a pedestal assembly having a substrate support and a de-chucking nozzle. The de-chucking nozzle is positioned to flow a fluid between the polishing head and the back side of a substrate during transfer of the substrate from the polishing head to the substrate support.
Abstract:
A chemical mechanical polishing system includes a platen to support a polishing pad, two carrier heads configured to hold two substrates against the polishing pad at the same time, two actuators to sweep the two carrier heads laterally across the polishing pad, an in-situ polishing monitoring system including a two current sensors to sense two currents supplied to the two actuators and generate two signals, and a controller to receive the two signals and independently detect a two endpoints for the two substrates based on the two signals.
Abstract:
The present invention generally relates to a polishing system. Particularly, the present invention relates a polishing apparatus having one or more modular polishing stations, and a plurality of polishing heads movably connected to a transferring system.