公开(公告)号：US4976612A

公开(公告)日：1990-12-11

申请号：US368744

申请日：1989-06-20

Applicant: Kenneth H. Adams

Inventor： Kenneth H. Adams

IPC: C30B31/10 ,  C30B31/16

CPC classification number: C30B31/103 ,  C30B31/16 ,  Y10S414/14

Abstract: A purge tube for protecting a boat(s) of wafers. This purge tube does not enter the furnace. A floating end cap within the tube moves to substantially seal the furance opening during processing. The floating end cap is withdrawn back to the closed end of the tube when the wafer boat(s) is withdrawn into the tube.

Abstract translation: 用于保护晶片船的清洗管。 该吹扫管不进入炉内。 管内的浮动端盖移动，以在加工过程中基本上密封保护开口。 当晶圆舟被抽出到管中时，浮动端盖被撤回到管的封闭端。

公开(公告)号：US4911638A

公开(公告)日：1990-03-27

申请号：US354133

申请日：1989-05-18

Applicant: Christopher J. Bayne ,  H. Chris Guiver

Inventor： Christopher J. Bayne ,  H. Chris Guiver

IPC: C30B31/10 ,  C30B31/14 ,  C30B31/16

CPC classification number: C30B31/10 ,  C30B31/14 ,  C30B31/16 ,  Y10S414/14

Abstract: A controlled diffusion environment capsule system (10) is used with a conventional tubular high temperature furnace (12) as employed in semiconductor manufacturing. The system (10) includes a cantilever boat loading apparatus (14) and a quartz diffusion capsule (16). Wafer carriers (20) support semiconductor wafers (22) concentrically with capsule (16) in closely spaced relationship for processing in the furnace (12). The diffusion capsule (16) is supported on a pair of quartz rods (24). A quartz injector tube (28) extends the length of the diffusion capsule (16). The injector tube (28) has three rows of high aspect-ratio apertures (30) extending along its length to disperse nitrogen or other inert gas uniformly across the surfaces (32) of the wafers (22). A quartz extender (34) is connected to the distal end of the diffusion capsule (16), through which reactant gases are supplied to the capsule (16) for diffusion and/or oxidation, from an inlet source (35) of the reactant gases on the furnace tube near the extender (34). The extender (34) has two apertured baffle plates (36) and (38) which have holes (40) and (42) in patterns that are offset relative to one another. A third plate (44) has a larger hole (46) at its center. The hole (46) focuses reactant gases into the capsule and the holes (40) and (42) provide turbulence to the reactant gas stream prior to its entry into the capsule (16) to assure uniform mixing.

Abstract translation: 与半导体制造中使用的常规管状高温炉（12）一起使用受控扩散环境胶囊系统（10）。 系统（10）包括悬臂舟装载装置（14）和石英扩散胶囊（16）。 晶片载体（20）以与密封件（16）同心的方式支撑半导体晶片（22），用于在炉子（12）中进行加工。 扩散胶囊（16）被支撑在一对石英棒（24）上。 石英注射管（28）延伸扩散胶囊（16）的长度。 注射管（28）具有三列沿其长度延伸的高纵横比孔（30），以将氮气或其它惰性气体均匀地分散在晶片（22）的表面（32）上。 石英延长器（34）连接到扩散胶囊（16）的远端，反应气体从反应物气体的入口源（35）向反应气体供给到胶囊（16）以进行扩散和/或氧化， 在炉管附近的扩展器（34）上。 扩展器（34）具有两个有孔的挡板（36）和（38），其具有相对于彼此偏移的图案中的孔（40）和（42）。 第三板（44）在其中心具有较大的孔（46）。 孔（46）将反应物气体聚集到胶囊中，并且孔（40）和（42）在其进入胶囊（16）之前向反应物气流提供湍流以确保均匀混合。

公开(公告)号：US4434036A

公开(公告)日：1984-02-28

申请号：US374415

申请日：1982-05-03

Applicant: Konstantin Hoerschelmann ,  Helmold Kausche ,  Werner Sp/a/ th

Inventor： Konstantin Hoerschelmann ,  Helmold Kausche ,  Werner Sp/a/ th

IPC: H01L21/22 ,  C30B31/16 ,  C30B31/22 ,  H01L21/223 ,  H01L21/265 ,  H01J17/00

CPC classification number: C30B31/16 ,  C30B31/22 ,  H01L21/2236 ,  H01L21/265 ,  H01L21/26513

Abstract: Method for doping semiconductor material, including a container into which doping material is led and aimed at the semiconductor material by means of an electrical field, which includes maintaining the doping material in a plasma in the container, and leading doping material ions into the semiconductor material by means of the electrical field, and an apparatus for carrying out the method.

Abstract translation: 掺杂半导体材料的方法，包括通过电场将掺杂材料引入并瞄准半导体材料的容器，其包括将掺杂材料保持在容器中的等离子体中，以及将掺杂材料离子引入半导体材料 借助于电场，以及用于执行该方法的装置。

公开(公告)号：US4211182A

公开(公告)日：1980-07-08

申请号：US903118

申请日：1978-05-05

Applicant: Wojciech Rosnowski

Inventor： Wojciech Rosnowski

IPC: C30B31/10 ,  C30B31/16 ,  C23C13/08

CPC classification number: C30B31/16 ,  C30B31/10

Abstract: A diffusion apparatus, particularly useful for diffusing aluminum into semiconductor wafers, comprises a quartz evaporation tube in combination with a restrictor plate which is inserted in an open end thereof. The restrictor plate preferably has substantially the same shape as, but a slightly smaller cross-section than, the evaporation tube. In practice, the relatively small gap between the restrictor plate and the evaporation tube results in a substantially negligible leak in the diffusion apparatus. As a result the apparatus effectively operates as if it were a sealed ampule while in fact it is open, i.e. not sealed.

Abstract translation: 特别适用于将铝扩散到半导体晶片中的扩散装置包括与插入其开口端的限流板组合的石英蒸发管。 限制板优选地具有与蒸发管大致相同的形状，但是具有与蒸发管相比稍微小的横截面。 在实践中，限流板和蒸发管之间的相对较小的间隙导致扩散装置中的基本可忽略的泄漏。 因此，装置有效地操作，好像它是一个密封的安瓿，而实际上它是开放的，即没有密封。

公开(公告)号：US3790404A

公开(公告)日：1974-02-05

申请号：US3790404D

申请日：1972-06-19

Applicant: IBM

Inventor： GARNACHE R ,  GHATALIA A ,  MICHAUD R

IPC: C23F4/00 ,  B01J15/00 ,  C23C16/44 ,  C23C16/54 ,  C30B25/02 ,  C30B25/14 ,  C30B31/10 ,  C30B31/16 ,  H01L21/205 ,  H01L21/22 ,  H01L21/302 ,  H01L21/31 ,  C23C11/08

CPC classification number: C30B31/106 ,  C23C16/54 ,  C30B31/16 ,  Y10S438/935

Abstract: Apparatus for effecting uniform and continuous mass transport reactions, such as oxidation, diffusion, etching, etc., between a gaseous phase reactant and semiconductor substrates. The apparatus comprises a longitudinal process tube, which includes a reaction zone flanked on either side by a combination entranceexhaust section and an exit-exhaust section. Reactant gas is provided to the reaction zone at a fixed flow rate and allowed to escape from the reaction zone axially through the two exhaust zones. Accurate isolation of the reaction zone is accomplished by passing additional gases into the entrance and exit zones at a rate sufficient to cause some gas to flow into the reaction zone where it is carried away through the exhaust zones by the axially flowing reacting gas.

Abstract translation: 用于在气相反应物和半导体衬底之间进行均匀且连续的质量传递反应（例如氧化，扩散，蚀刻等）的装置。 该装置包括纵向处理管，其包括在两侧的组合进入排气段和出口排气段两侧的反应区。 以固定的流速将反应物气体提供给反应区，并允许轴向通过两个排气区从反应区逸出。 通过将额外的气体以足以使一些气体流入反应区域的速率将额外的气体通入入口和出口区域，其中通过轴向流动的反应气体将其输送通过排气区域来实现反应区域的精确隔离。

公开(公告)号：US3711073A

公开(公告)日：1973-01-16

申请号：US3711073D

申请日：1969-07-14

Applicant: CORNING GLASS WORKS

Inventor： CHU B ,  FISCHER D ,  KUNZ H

IPC: C23C16/54 ,  C30B31/10 ,  C30B31/12 ,  C30B31/16 ,  C30B33/00 ,  H01L21/00 ,  H01L21/223 ,  H01L21/3065 ,  H01L23/29 ,  F27B9/28

CPC classification number: H01L21/00 ,  C23C16/545 ,  C30B31/106 ,  C30B31/12 ,  C30B31/16 ,  C30B33/005 ,  H01L21/223 ,  H01L21/3065 ,  H01L23/29 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A furnace for continuously processing elongated ribbons or webs of materials such as semiconductors, metals or glasses. Both ends of a tubular reaction chamber disposed in a heating system are provided with end caps which accommodate all gas inlet and outlet connections and which act as gas locks. A mixture of reactant and carrier gas enters the furnace through one end cap and leaves the furnace through the other. This furnace may be used for such chemical processes as diffusion, surface oxidation, etching, metallization and other pyrolytic processes.

Abstract translation: 用于连续处理诸如半导体，金属或玻璃的细长条带或材料网的炉。 设置在加热系统中的管状反应室的两端设置有容纳所有气体入口和出口连接并用作气体锁的端盖。 反应物和载气的混合物通过一个端盖进入炉中，并通过另一端离开炉。 该炉可用于诸如扩散，表面氧化，蚀刻，金属化和其它热解过程之类的化学过程。

公开(公告)号：US3660179A

公开(公告)日：1972-05-02

申请号：US3660179D

申请日：1970-08-17

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： DESMOND TIMOTHY J ,  KRUMANACKER BERTON P

IPC: C30B31/16 ,  H01L21/00 ,  H01L7/44

CPC classification number: C30B31/16 ,  H01L21/00 ,  Y10S118/90 ,  Y10S148/006 ,  Y10S252/951 ,  Y10S438/935

Abstract: A counter-flow of an inert, or a predominantly inert, gas is provided in a diffusion furnace to provide means for creating turbulence within the diffusion system thereby improving the uniformity of dopant along the length of the diffusion carrier contained therein.

Abstract translation: 在扩散炉中提供惰性气体或主要惰性气体的逆流，以提供在扩散系统内产生湍流的装置，从而提高掺杂剂沿其中所含的扩散载体的长度的均匀性。

公开(公告)号：US3650042A

公开(公告)日：1972-03-21

申请号：US3650042D

申请日：1969-05-19

Applicant: IBM

Inventor： BOERGER FRANK E ,  WHITE WILLIAM H

IPC: C23C14/56 ,  C23C16/54 ,  C23F1/00 ,  C30B31/10 ,  C30B31/16 ,  F26B25/00

CPC classification number: H01L21/67173 ,  C23C14/56 ,  C23C16/54 ,  C23F1/00 ,  C30B31/106 ,  C30B31/16 ,  H01L21/67109 ,  H01L21/6719

Abstract: A transition or isolation zone for accommodating continuous free flow of a tier of articles between two distinct and isolated atmospheres. The transition zone includes a series of alternate inlet and outlet compartments for a non-reactive gas wherein the compartments contain inlet and outlet openings interconnecting with each other and the indicated atmospheres. The cross sections of the openings are complementary to the cross section of the tier of articles to provide a restricted orifice-size clearance therebetween, whereby the orifice phenomena can be employed by correlation of pressures to control the flow of gas and conversely to substantially completely isolate the indicated atmospheres without any measurable cross-migration therebetween.

Abstract translation: 用于在两个不同和隔离的气氛之间容纳一层物品的连续自由流动的过渡或隔离区。 过渡区域包括用于非反应性气体的一系列替代的入口和出口隔室，其中隔室包含彼此互相连接的引入和出口以及指示的气氛。 开口的横截面与制品层的横截面互补，以在它们之间提供限制的孔尺寸间隙，由此可以通过压力相关来采用孔眼现象来控制气体的流动，而相反地基本上完全隔离 所指示的气氛在它们之间没有任何可测量的交叉迁移。

公开(公告)号：US3554162A

公开(公告)日：1971-01-12

申请号：US3554162D

申请日：1969-01-22

Applicant: MOTOROLA INC

Inventor： COTA MARLO E ,  WILLIAMS JAMES H

IPC: C30B31/10 ,  C30B31/16 ,  C23C11/00

CPC classification number: C30B31/10 ,  C30B31/16 ,  Y10S118/90

Abstract: A diffusion tube is described which incorporates an internal seal to prevent the back diffusion of impurity material and the condensation thereof on the input portion of the tube. The tube is provided with an internal baffle plate which is urged into contact with a stop provided on the inner periphery of the tube. The baffle plate contains an aperture to permit the passage of gas therethrough from the input port of the tube. An impurity support is attached to the side of the baffle plate opposite the input port. The impurity source and the semiconductor wafers being processed are inserted in the same end of the diffusion tube. This end is relatively free from condensed impurity material at the completion of the diffusion process due to the combination of the shoulder and the baffle plate. As a result, the processed wafers can be withdrawn from the tube without significant surface contamination.

公开(公告)号：US20170081761A1

公开(公告)日：2017-03-23

申请号：US15371068

申请日：2016-12-06

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chia-Yi Chuang ,  Hsing-Jui Lee ,  Ming-Te Chen

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/46

CPC classification number: C23C16/45527 ,  C23C16/455 ,  C23C16/45544 ,  C23C16/45546 ,  C23C16/45548 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/4583 ,  C23C16/46 ,  C30B25/14 ,  C30B31/16 ,  H01J37/3244 ,  H01L21/0228 ,  H01L21/3141

Abstract: An atomic layer deposition apparatus includes a chamber including a plurality of regions; and a heating device respectively providing specific temperature ranges for the plurality of regions. By flowing precursor gases at different flow rates in the different regions, thin films can be simultaneously formed in the different regions having different film thicknesses.