公开(公告)号：US20170053916A1

公开(公告)日：2017-02-23

申请号：US14832086

申请日：2015-08-21

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD

Inventor： Kuo-Cheng CHING ,  Ching-Wei TSAI ,  Ying-Keung LEUNG

IPC: H01L27/092 ,  H01L29/45 ,  H01L29/417 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/08

CPC classification number: H01L27/0924 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823871 ,  H01L29/0847 ,  H01L29/41766 ,  H01L29/41791 ,  H01L29/45 ,  H01L29/665 ,  H01L29/6653

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a fin structure formed over a substrate and a first gate structure formed across the fin structure. The semiconductor structure further includes a first source/drain structure formed in the fin structure adjacent to the first gate structure and a first contact formed over the first source/drain structure. In addition, the first contact includes a first extending portion extending into the first source/drain structure.

Abstract translation: 提供半导体结构及其形成方法。 半导体结构包括在衬底上形成的鳍结构和横跨翅片结构形成的第一栅极结构。 半导体结构还包括形成在与第一栅极结构相邻的鳍结构中的第一源极/漏极结构和形成在第一源极/漏极结构之上的第一接触。 此外，第一触点包括延伸到第一源极/漏极结构中的第一延伸部分。

公开(公告)号：US20160308048A1

公开(公告)日：2016-10-20

申请号：US14687815

申请日：2015-04-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Kuo-Cheng CHING ,  Ching-Wei TSAI ,  Chih-Hao WANG ,  Wai-Yi LIEN

IPC: H01L29/78 ,  H01L21/02 ,  H01L29/51 ,  H01L29/16 ,  H01L29/66 ,  H01L29/40

CPC classification number: H01L29/7848 ,  H01L21/02236 ,  H01L21/0228 ,  H01L21/02524 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02645 ,  H01L21/7624 ,  H01L29/0638 ,  H01L29/1604 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/401 ,  H01L29/51 ,  H01L29/517 ,  H01L29/66795 ,  H01L29/66818 ,  H01L29/785

Abstract: A method for manufacturing a semiconductor device includes forming a fin structure including a well layer, an oxide layer disposed over the well layer and a channel layer disposed over the oxide layer. An isolation insulating layer is formed so that the channel layer of the fin structure protrudes from the isolation insulating layer and a part of or an entirety of the oxide layer is embedded in the isolation insulating layer. A gate structure is formed over the fin structure. A recessed portion is formed by etching a part of the fin structure not covered by the gate structure such that the oxide layer is exposed. A recess is formed in the exposed oxide layer. An epitaxial seed layer in the recess in the oxide layer. An epitaxial layer is formed in and above the recessed portion. The epitaxial layer is in contact with the epitaxial seed layer.

Abstract translation: 一种制造半导体器件的方法包括形成鳍结构，其包括阱层，设置在阱层上的氧化物层和设置在氧化物层上的沟道层。 形成隔离绝缘层，使得翅片结构的沟道层从隔离绝缘层突出，并且氧化物层的一部分或全部被嵌入隔离绝缘层中。 在鳍结构上形成栅结构。 通过蚀刻未被栅极结构覆盖的鳍状结构的一部分使得氧化物层露出而形成凹部。 在暴露的氧化物层中形成凹部。 在氧化物层的凹部中的外延籽晶层。 在凹部内和上方形成外延层。 外延层与外延种子层接触。