摘要:
A semiconductor memory includes a storing transistor for storing data, wherein the storing transistor includes an MFS transistor, an MFIS transistor, or an MFMIS transistor, and a selecting transistor for selecting the storing transistor. The storing transistor is a first field effect transistor having a first well region. The selecting transistor is second field effect transistor having a second well region that is isolated from the first well region of the first field effect transistor. The semiconductor memory further includes a first voltage supply line for supplying a DC voltage to the first well region of the first field effect transistor, and a second voltage supply line, independent of the first voltage supply line, for supplying a DC voltage to the second well region of the second field effect transistor.
摘要:
A multi-valued data is written in a ferroelectric capacitor, which stores a multi-valued data in accordance with displacement of polarization of a ferroelectric film thereof, by applying a relatively high first writing voltage or a relatively low second writing voltage between a first electrode and a second electrode of the ferroelectric capacitor. Next, a potential difference induced between the first and second electrodes is removed. Then, the multi-valued data is read by detecting the displacement of the polarization of the ferroelectric film by applying a reading voltage between the second electrode and a substrate where a reading FET for detecting the displacement of the polarization of the ferroelectric film is formed. The reading voltage has the same polarity as the first writing voltage and is set to such magnitude that, in applying the reading voltage, a first potential difference induced between the gate electrode of the reading FET and the substrate when the multi-valued data is written by applying the first writing voltage is smaller than a second potential difference induced between the gate electrode and the substrate when the multi-valued data is written by applying the second writing voltage.
摘要:
A near-field optical probe comprises a micro-aperture for irradiating and/or detecting evanescent light through the front end of the probe, an elastically deformable cantilever supporting the micro-aperture at the free end thereof, and a surface plasmon polariton waveguide arranged on the cantilever to guide light from a light source to the micro-aperture and/or to guide light from a light source introduced through the micro-aperture.
摘要:
An optical prove for detecting or irradiating evanescent light is manufactured by forming a film having a regulated film thickness on a substrate, then forming a recess from the rear surface of the substrate, and forming a through hole in the film from the side of the recess by etching. The obtained optical probe has a micro-aperture at the tip of the through hole and usually, a plurality of optical probes each having a micro-aperture of uniform profile are formed on a single substrate. In the recess, light-receiving or light-irradiating means may be provided.
摘要:
A semiconductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 1021 atoms/cm3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.
摘要翻译:一种通过半导体衬底上的层间绝缘层形成电容器的半导体器件,其上形成集成电路。 该半导体装置具有含水量为0.5g / cm 3以下的层间绝缘层,其在一个方面覆盖电容器,并且具有氢含量为1021原子/ cm3以下的钝化层,其覆盖电容器的互连 在其他方面。 通过这样构成,可以防止导致铁电层或高介电层的电可靠性的电容器电介质的劣化。
摘要:
A sliver halide color photographic light-sensitive material comprising a support having provided thereon at least one silver halide emulsion layer containing at least one cyan dye forming coupler represented by the formula (1) shown below, at least one compound represented by the formula (A) shown below and at least one compound represented by the formula (D) shown below: ##STR1## wherein Z.sup.a and Z.sup.b each represents --C(R.sup.3).dbd. or --N=, provided that one of Z.sup.a and Z.sup.b is --N= and the other is --C(R.sup.3).dbd.; R.sup.1 and R.sup.2 each represents an electron attractive group having a Hammett's substituent constant .sigma..sub.p value of 0.20 or more and the sum of the .sigma..sub.p values of R.sup.1 and R.sup.2 is 0.65 or more; R.sup.3 represents a hydrogen atom or a substituent; X represents a hydrogen atom or a group capable of being released upon a coupling reaction with an oxidation product of an aromatic primary amine color developing agent; and group represented by R.sup.1, R.sup.2, R.sup.3 or X may be a divalent group to form a dimer or more, or combine with a polymer chain to form a homopolymer or a copolymer; ##STR2## The silver halide color photographic light-sensitive material provides color images excellent in color reproducibility and color image fastness.
摘要:
A probe for detecting minute physical behavior comprises a lever member, particularly in the form of a cantilever, formed of a monocrystalline silicon layer and a tip in the form of one-end-supported beam which is bowed and formed upon the lever member. The probe is manufactured by forming a film of a material with low density and high elasticity on the silicon layer of an SOI substrate, then oxidizing part of the silicon layer and removing the oxidized portion to form a tip with the material as a so-called bird's beak, and finally the SOI substrate is worked to form the cantilever shape of the lever member. The probe can be used for an information recording/reproducing device with good traceability even in high speed scanning over a recording medium.
摘要:
A silver halide color light-sensitive material containing a cyan coupler which provides an excellent hue and an improved fastness at a low color-developing area and which has small change in a color developing density, which is caused by change of a composition of a blix solution and provides a small fog in a cyan color at a non-exposed area in a continuous processing. The silver halide color light-sensitive material contains at least one cyan coupler represented by the following Formula (I) in at least one layer on a support: wherein Y represents --N.dbd. or --C(R.sub.3).dbd.; X represents a hydrogen atom or a group which splits off upon a coupling reaction with an oxidized product of a color developing agent; Z represents a non-metallic atomic group necessary for forming an alicyclic group or a heterocyclic ring; R.sub.1, R.sub.2 and R.sub.3 each represents a hydrogen atom or a substituent; and R.sub.1 contributes to form an unsaturated bond in a ring formed by Z or combined with the atoms on the ring formed by Z to form a ring.
摘要:
A method for an accelerated test of semiconductor devices comprises the steps of determining a relational expression t.sub.1 =t.sub.2.sup.m between an information holding lifetime t.sub.1 at a temperature T.sub.1 and another lifetime t.sub.2 at another temperature T.sub.2, expressing the exponent m as a function of the temperature that is proportional to the Boltzmann's factor, and calculating the information holding lifetime t.sub.2 at the temperature T.sub.2 on the basis of the information holding lifetime t.sub.1 at the temperature T.sub.1 using the relational expression.
摘要:
A semi conductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm.sup.3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 10.sup.21 atoms/cm.sup.3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.
摘要翻译:一种半导体器件,其在形成集成电路的半导体衬底上通过层间绝缘层形成电容器。 该半导体装置具有含水量为0.5g / cm 3以下的层间绝缘层,其在一个方面覆盖电容器,并且具有氢含量为1021原子/ cm3以下的钝化层,其覆盖电容器的互连 在其他方面。 通过这样构成,可以防止导致铁电层或高介电层的电可靠性的电容器电介质的劣化。