公开(公告)号：US20110244671A1

公开(公告)日：2011-10-06

申请号：US13159741

申请日：2011-06-14

Applicant: Robert Beach ,  Zhi He ,  Jianjun Cao

Inventor： Robert Beach ,  Zhi He ,  Jianjun Cao

IPC: H01L21/283

CPC classification number: H01L29/2003 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/28581 ,  H01L29/205 ,  H01L29/401 ,  H01L29/4916 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/772 ,  H01L29/7786 ,  H01L29/7787

Abstract: A III-nitride semiconductor device which includes a barrier body between the gate electrode and the gate dielectric thereof.

Abstract translation: 一种III族氮化物半导体器件，其包括在栅极电极和栅极电介质之间的势垒体。

公开(公告)号：US07892938B2

公开(公告)日：2011-02-22

申请号：US11507709

申请日：2006-08-22

Applicant: Robert Beach ,  Paul Bridger

Inventor： Robert Beach ,  Paul Bridger

IPC: H01L21/76

CPC classification number: H01L29/66462 ,  H01L21/76 ,  H01L21/7605 ,  H01L21/76264 ,  H01L21/76289 ,  H01L29/2003 ,  Y10S438/93

Abstract: III-nitride materials are used to form isolation structures in high voltage ICs to isolate low voltage and high voltage functions on a monolithic power IC. Critical performance parameters are improved using III-nitride materials, due to the improved breakdown performance and thermal performance available in III-nitride semiconductor materials. An isolation structure may include a dielectric layer that is epitaxially grown using a III-nitride material to provide a simplified manufacturing process. The process permits the use of planar manufacturing technology to avoid additional manufacturing costs. High voltage power ICs have improved performance in a smaller package in comparison to corresponding silicon structures.

Abstract translation: III族氮化物材料用于在高电压IC中形成隔离结构，以隔离单片电源IC上的低电压和高电压功能。 由于III族氮化物半导体材料的击穿性能和热性能的改善，使用III族氮化物材料改善了关键性能参数。 隔离结构可以包括使用III族氮化物材料外延生长以提供简化的制造工艺的电介质层。 该过程允许使用平面制造技术来避免额外的制造成本。 与相应的硅结构相比，高压功率IC在较小的封装中具有改进的性能。

公开(公告)号：US20110014500A1

公开(公告)日：2011-01-20

申请号：US12460412

申请日：2009-07-17

Applicant: Cheng T. Horng ,  Ru-Ying Tong ,  Guangli Liu ,  Robert Beach ,  Witold Kula ,  Tai Min

Inventor： Cheng T. Horng ,  Ru-Ying Tong ,  Guangli Liu ,  Robert Beach ,  Witold Kula ,  Tai Min

IPC: G11B5/706 ,  C23C14/34 ,  B44C1/22

CPC classification number: H01L43/12 ,  B82Y25/00 ,  C23C14/3414 ,  G11C11/16 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114

Abstract: A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB/NCC/CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jc0 while enabling thermal stability, write voltage, read voltage, and Hc values that satisfy 64 Mb design requirements. The NCC layer has RM grains in an insulator matrix where R is Co, Fe, or Ni, and M is a metal such as Si or Al. NCC thickness is maintained around the minimum RM grain size to avoid RM granules not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A second NCC layer and third CoFeB layer may be included in the free layer or a second NCC layer may be inserted below the Ru capping layer.

Abstract translation: 公开了一种STT-RAM MTJ，其具有通过自然氧化形成的MgO隧道势垒，并含有氧表面活性剂层以形成更均匀的MgO层和较低的击穿分布百分比。 具有中等纳米通道层的CoFeB / NCC / CoFeB复合自由层使Jc0最小化，同时实现满足64Mb设计要求的热稳定性，写电压，读电压和Hc值。 NCC层在绝缘体基体中具有RM颗粒，其中R是Co，Fe或Ni，M是诸如Si或Al的金属。 NCC厚度保持在最小RM晶粒尺寸周围，以避免RM颗粒不具有足够的直径以桥接上部和下部CoFeB层之间的距离。 可以在自由层中包括第二NCC层和第三CoFeB层，或者可以将第二NCC层插入Ru覆盖层的下方。

公开(公告)号：US20100258912A1

公开(公告)日：2010-10-14

申请号：US12756063

申请日：2010-04-07

Applicant: Robert Beach ,  Guang Yuan Zhao

Inventor： Robert Beach ,  Guang Yuan Zhao

IPC: H01L29/20 ,  H01L21/20

CPC classification number: H01L21/02579 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/207 ,  H01L29/452 ,  H01L29/66462 ,  H01L29/7783

Abstract: A semi-conductor crystal and method of forming the same. The method includes providing a flow of dopant and column III element containing gases, then stopping flow of dopant and column III element containing gases, reducing the temperature, restarting flow of column III containing gases and then elevating the temperature.

Abstract translation: 半导体晶体及其形成方法。 该方法包括提供含有气体的掺杂剂和含有III族元素的气流，然后停止含掺杂剂和含有III族元素的气体的流动，降低温度，重新开始含有气体的第III族气体的流动，然后升高温度。

公开(公告)号：US20100258848A1

公开(公告)日：2010-10-14

申请号：US12756906

申请日：2010-04-08

Applicant: Alexander Lidow ,  Robert Beach ,  Jianjun Cao ,  Alana Nakata ,  Guang Yuan Zhao

Inventor： Alexander Lidow ,  Robert Beach ,  Jianjun Cao ,  Alana Nakata ,  Guang Yuan Zhao

IPC: H01L29/78 ,  H01L29/772

CPC classification number: H01L29/802 ,  H01L29/2003 ,  H01L29/66522

Abstract: A MISFET, such as a GaN transistor, with low gate leakage. In one embodiment, the gate leakage is reduced with a compensated GaN layer below the gate contact and above the barrier layer. In another embodiment, the gate leakage is reduced by employing a semi-insulating layer below the gate contact and above the barrier layer.

Abstract translation: 具有低栅极泄漏的MISFET，例如GaN晶体管。 在一个实施例中，栅极泄漏随着栅极接触下方的补偿GaN层和势垒层上方而减小。 在另一个实施例中，通过在栅极接触之下和阻挡层之上采用半绝缘层来减小栅极泄漏。

公开(公告)号：US20100258844A1

公开(公告)日：2010-10-14

申请号：US12756975

申请日：2010-04-08

Applicant: Alexander Lidow ,  Robert Beach ,  Alana Nakata ,  Jianjun Cao

Inventor： Alexander Lidow ,  Robert Beach ,  Alana Nakata ,  Jianjun Cao

IPC: H01L29/772 ,  H01L23/367 ,  H01L23/488

CPC classification number: H01L23/3192 ,  H01L23/3178 ,  H01L23/367 ,  H01L23/3672 ,  H01L24/13 ,  H01L24/16 ,  H01L29/0657 ,  H01L29/205 ,  H01L29/267 ,  H01L29/41725 ,  H01L29/7787 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2224/05599 ,  H01L2224/05099

Abstract: A semiconductor device comprising a silicon substrate, a compound semiconductor material, an insulating material between the silicon substrate and the compound semiconductor material, and a top surface comprising means of electrical connection, and passivation material, where the passivation material is silicon nitride, silicon dioxide, or a combination of both. The present invention eliminates the need for a thick electrical insulator between a heat sink and the back surface of a surface mounted device by the inclusion of an AlN seed layer to electrically isolate the silicon substrate of the device. The sidewalls of the device are also electrically isolated from the active area of the device.

Abstract translation: 一种半导体器件，包括硅衬底，化合物半导体材料，硅衬底和化合物半导体材料之间的绝缘材料，以及包括电连接装置的顶表面和钝化材料，其中钝化材料是氮化硅，二氧化硅 ，或两者的组合。 本发明通过包含AlN晶种层来电绝缘器件的硅衬底，消除了散热器与表面安装器件背面之间的厚电绝缘体的需要。 器件的侧壁也与器件的有源区域电隔离。

公开(公告)号：US07653033B2

公开(公告)日：2010-01-26

申请号：US10784588

申请日：2004-02-23

Applicant: Robert Beach ,  Heiner Schwede

Inventor： Robert Beach ,  Heiner Schwede

IPC: H04Q7/24 ,  H04L12/28

CPC classification number: H04W8/26 ,  H04L12/4625 ,  H04W52/0203 ,  H04W52/0216 ,  H04W84/12 ,  H04W88/08 ,  Y02D70/142

Abstract: A wireless data communications system includes simplified access points which are connected to ports of an intelligent switching hub. The switching hub relays data packets to the access points in accordance with destination address data in the data communications. In a preferred arrangement the access points are provided with power over the data cable from the switching hub location.

Abstract translation: 无线数据通信系统包括连接到智能交换集线器端口的简化接入点。 交换集线器根据数据通信中的目的地址数据将数据分组中继到接入点。 在优选的布置中，接入点通过数据电缆从交换集线器位置提供电力。

公开(公告)号：US07652311B2

公开(公告)日：2010-01-26

申请号：US11906823

申请日：2007-10-04

Applicant: Robert Beach

Inventor： Robert Beach

IPC: H01L29/739 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/06 ,  H01L29/22 ,  H01L33/00

CPC classification number: H01L29/7787 ,  H01L29/2003

Abstract: A III-nitride based field effect transistor obtains improved performance characteristics through manipulation of the relationship between the in-plane lattice constant of the interface of material layers. A high mobility two dimensional electron gas generated at the interface of the III-nitride materials permits high current conduction with low ON resistance, and is controllable through the manipulation of spontaneous polarization fields obtained according to the characteristics of the III-nitride material. The field effect transistor produced can be made to be a nominally on device where the in-plane lattice constants of the material forming the interface match. A nominally off device may be produced where one of the material layers has an in-plane lattice constant that is larger than that of the other layer material. The layer materials are preferably InAlGaN/GaN layers that are particularly tailored to the characteristics of the present invention.

Abstract translation: 基于III族氮化物的场效应晶体管通过处理材料层的界面的面内晶格常数之间的关系来获得改进的性能特性。 在III族氮化物材料的界面处产生的高迁移率二维电子气体允许具有低导通电阻的高电流传导，并且可以通过操纵根据III族氮化物材料的特性获得的自发极化场来控制。 所产生的场效应晶体管可以在名义上成为形成界面的材料的面内晶格常数匹配的器件上。 可以制造名义上关闭的装置，其中材料层之一的面内晶格常数大于其它层材料的面内晶格常数。 层材料优选是特别适合于本发明特征的InAlGaN / GaN层。

公开(公告)号：US20090065785A1

公开(公告)日：2009-03-12

申请号：US11899510

申请日：2007-09-06

Applicant: Robert Beach

Inventor： Robert Beach

IPC: H01L29/20 ,  H01L21/336 ,  H01L29/78

CPC classification number: H01L29/7813 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/66727 ,  H01L29/66734

Abstract: A power semiconductor device that includes common conduction regions, charge compensation regions, each adjacent a respective common conduction region, and a stand off region over the common conduction regions and charge compensation regions.

Abstract translation: 一种功率半导体器件，其包括公共导电区域，电荷补偿区域，每个邻近相应的公共导电区域，以及在共同导电区域和电荷补偿区域上的支撑区域。

公开(公告)号：US20080296621A1

公开(公告)日：2008-12-04

申请号：US12154341

申请日：2008-05-22

Applicant: Paul Bridger ,  Robert Beach

Inventor： Paul Bridger ,  Robert Beach

IPC: H01L29/43

CPC classification number: H01L29/778 ,  H01L29/0692 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/7787

Abstract: A III-nitride heterojunction semiconductor device having a III-nitride heterojunction that includes a discontinuous two-dimensional electron gas under a gate thereof.

Abstract translation: 具有III族氮化物异质结的III族氮化物异质结半导体器件，其在栅极下方包括不连续的二维电子气。