Automated DSL Performance Adjustment
    72.
    发明申请
    Automated DSL Performance Adjustment 有权
    自动DSL性能调整

    公开(公告)号:US20110142206A1

    公开(公告)日:2011-06-16

    申请号:US13035283

    申请日:2011-02-25

    IPC分类号: H04M3/22

    CPC分类号: H04M3/2209 H04M3/305

    摘要: A method includes selecting a first set of digital subscriber lines (DSLs) supported by a digital subscriber line access multiplexor (DSLAM). The DSLs of the first set exhibit reduced performance based on historical performance data. The method includes sending a request to the DSLAM for a first performance parameter for each of the DSLs of the first set. The method includes receiving the first performance parameters. The method includes removing DSLs from the first set that have suitable performance based on the first performance parameters to create a second set of DSLs. The method includes selecting a line profile to apply to the second set of DSLs. The method also includes sending a second request to the DSLAM to apply the line profile to the DSLs of the second set and then to determine a second performance parameter for each of the DSLs of the second set.

    摘要翻译: 一种方法包括选择由数字用户线路接入复用器(DSLAM)支持的第一组数字用户线路(DSL)。 第一组的DSL基于历史性能数据显示降低的性能。 该方法包括向DSLAM发送针对第一组的每个DSL的第一性能参数的请求。 该方法包括接收第一性能参数。 该方法包括从第一组中移除具有基于第一性能参数的合适性能的DSL以创建第二组DSL。 该方法包括选择应用于第二组DSL的线路简档。 该方法还包括向DSLAM发送第二请求以将线路简档应用于第二组的DSL,然后确定第二组的每个DSL的第二性能参数。

    POWER CABLE
    73.
    发明申请
    POWER CABLE 失效
    电源线

    公开(公告)号:US20110048768A1

    公开(公告)日:2011-03-03

    申请号:US12736683

    申请日:2009-04-02

    IPC分类号: H01B7/18

    CPC分类号: H01B7/0216 H01B7/08 H01B7/24

    摘要: A power cable (10) is disclosed comprising a metal conductor encased in a first outer sheath (11), and further encased, partially along the length of the cable, in a second outer sheath (12, 13, 14) which influences the pattern of deformation of the cable under mechanical stress.

    摘要翻译: 公开了一种电力电缆(10),其包括封装在第一外护套(11)中的金属导体,并且还部分地沿着电缆的长度封装在影响图案的第二外护套(12,13,14)中 电缆在机械应力下的变形。

    GROUND STUD INSTALLATION ON COMPOSITE STRUCTURES FOR ELECTROSTATIC CHARGES
    74.
    发明申请
    GROUND STUD INSTALLATION ON COMPOSITE STRUCTURES FOR ELECTROSTATIC CHARGES 有权
    静电放电复合结构的地面安装

    公开(公告)号:US20070270002A1

    公开(公告)日:2007-11-22

    申请号:US11834141

    申请日:2007-08-06

    IPC分类号: H01R13/648 H01R43/20

    摘要: Apparatus for bleeding electrical charge and methods for installing a ground stud in a composite structure. The apparatus includes a ground stud and a composite structure including a hole. In one embodiment the ground stud engages the hole in the composite structure in a transition fit. In another embodiment the ground stud is countersunk within the composite structure. Embodiments of the present methods include drilling a hole in the composite structure; inserting the ground stud into the hole such that the ground stud is in electrical contact with conductive fibers within the composite structure; securing the ground stud to the composite structure; and attaching a connective device to the ground stud such that the connective device is in electrical contact with the ground stud. In some embodiments the ground stud and the composite structure engage one another in a transition fit. In some embodiments the ground stud includes a pin, and a portion of the pin that contacts the composite structure is non-threaded. In some embodiments the ground stud is countersunk within the composite structure.

    摘要翻译: 用于电荷放电的装置以及将复合结构中的接地柱安装的方法。 该装置包括接地柱和包括孔的复合结构。 在一个实施例中,接地螺柱以过渡配合接合复合结构中的孔。 在另一个实施例中,接地螺柱在复合结构内是埋头的。 本方法的实施例包括在复合结构中钻孔; 将接地螺栓插入孔中,使得接地螺柱与复合结构内的导电纤维电接触; 将地脚固定在复合结构上; 以及将连接装置连接到接地柱,使得连接装置与接地柱螺纹电接触。 在一些实施例中,接地螺柱和复合结构在过渡拟合中彼此接合。 在一些实施例中,接地螺柱包括销,并且接触复合结构的销的一部分是非螺纹的。 在一些实施例中,接地螺柱在复合结构内是埋头的。

    Latch-up prevention for memory cells
    76.
    发明申请
    Latch-up prevention for memory cells 审中-公开
    记忆细胞的锁定预防

    公开(公告)号:US20060128090A1

    公开(公告)日:2006-06-15

    申请号:US11353180

    申请日:2006-02-13

    IPC分类号: H01L21/8238

    摘要: A method of fabricating a memory cell and corresponding memory cell structure are provided. According to the method, a pull-up transistor and a pull-down transistor are formed in a semiconductor structure of the memory cell. The pull-up transistor is coupled to the pull down transistor. The pull-up transistor is coupled to a contact within said semiconductor structure such that the pull-up transistor is coupled to a voltage input through parasitic resistance of the semiconductor structure. Additional embodiments are disclosed.

    摘要翻译: 提供了一种制造存储单元和相应的存储单元结构的方法。 根据该方法,在存储单元的半导体结构中形成上拉晶体管和下拉晶体管。 上拉晶体管耦合到下拉晶体管。 上拉晶体管耦合到所述半导体结构内的触点,使得上拉晶体管通过半导体结构的寄生电阻耦合到电压输入。 公开了另外的实施例。

    Protected substrate structure for a field emission dispaly device
    77.
    发明申请
    Protected substrate structure for a field emission dispaly device 审中-公开
    用于场发射观测装置的受保护的衬底结构

    公开(公告)号:US20060108912A1

    公开(公告)日:2006-05-25

    申请号:US11326266

    申请日:2005-12-30

    IPC分类号: H01J1/62

    摘要: A protected faceplate structure of a field emission display device is disclosed in one embodiment. Specifically, in one embodiment, the present invention recites a faceplate of a field emission display device wherein the faceplate of the field emission display device is adapted to have phosphor containing wells disposed above one side thereof. The present embodiment is further comprised of a barrier layer which is disposed over the one side of said faceplate which is adapted to have phosphor containing wells disposed thereabove. The barrier layer of the present embodiment is adapted to prevent degradation of the faceplate. Specifically, the barrier layer of the present embodiment is adapted to prevent degradation of the faceplate due to electron bombardment by electrons directed towards the phosphor containing wells.

    摘要翻译: 在一个实施例中公开了场致发射显示装置的受保护的面板结构。 具体地说,在一个实施例中,本发明叙述了场致发射显示装置的面板,其中场致发射显示装置的面板适于在其一侧上设置含荧光体的孔。 本实施例还包括设置在所述面板的一侧上的阻挡层,其适于具有设置在其上的荧光体含有孔。 本实施例的阻挡层适于防止面板的劣化。 具体地说,本实施例的阻挡层适于防止由于电子被引向含荧光体孔的电子轰击导致面板的劣化。